The Rectification Studies on the P -Ion Implanted C60/Si Films

N-type doping of the C₆₀ films deposited on Si substrates has been achieved by 80 keV P⁺-ion implantation with doses of 2×10¹⁴ cm^-2 at room temperature. The heterostructures composed of the n-type doped C₆₀ films and n- or p-type Si(111), Si(100) substrates are studied in view of semiconductor heterojunctions. The rectification and other electrical characteristics of the P⁺-ion implanted n-C₆₀/n-(p-)Si heterostructures are disclosed by the current-voltage (I-V) measurements at room temperature. The n-C₆₀/p-Si heterostructures show stronger rectification than n-C₆₀/n-Si heterostructures and Si(111) substrates are found to be more suitable for forming n-C₆₀/Si heterostructures than Si(100) substrates.     

Preparation and characterization of C60S16 and C70S48 thin films

In this study, we have investigated different methods for preparation of thin films of C₆₀ and C₇₀-sulfur compounds. Films of good quality were obtained by reaction of amorphous C₆₀ and C₇₀ films with a saturated sulfur solution in toluene at 40°C or with saturated sulfur vapour at a temperature of 140°C for several hours. The quality of the fullerene-sulfur films were strongly dependent on the microstructure of the initially deposited fullerene film and the synthesis temperature. X-ray diffraction analyses showed that both methods lead to the formation of films consisting of C₆₀S₁₆ and C₇₀S₄₈ (space groups C 2/c and Amm2, respectively). C₆₀S₁₆ films synthesised on Al₂O₃(012) and Si(100) substrates were texture-free while C₇₀S₄₈ films typically exhibited a preferential (100) orientation. The films were also characterised by Raman and IR- spectroscopy, which confirmed that the interactions between the fullerene molecules and the S₈ rings are weak. The fullerene-sulfur compounds were found to be unstable at high vacuum conditions. Both materials C₆₀S₁₆ and C₇₀S₄₈ are non-conductive at room temperature with conductivities less then 10⁻⁵ (Ω/cm).     

He Ion Bombardment of C70 Fullerene: An FT-IR and Raman Study

C₇₀ fullerene films deposited on a silicon substrate have been bombarded with He⁺ ions at 30 keV at room temperature in vacuum. The structural changes undergone by C₇₀ have been followed by both FT-IR and Raman spectroscopy. The results have been compared to the behavior of C₆₀ fullerene and discussed in an astrochemical context. The main conclusion is that C₇₀, contrary to C₆₀, does not form oligomers at low radiation dose but it is directly and gradually degraded to amorphous carbon (carbon black).     

He ION BOMBARDMENT OF C60 FULLERENE: AN FT-IR AND RAMAN STUDY

C₆₀ fullerene films have been bombarded with He⁺ ions at 30 keV at room temperature in vacuum. The structural changes undergone by C₆₀ have been followed by both FT-IR and Raman spectroscopy. Raman spectroscopy was the most useful tool for this scope. It has been clearly discovered that at low radiation dose C₆₀ forms oligomers but at higher radiation doses it is converted into an amorphous carbonaceous matter. The implications of these results on the possible survival of C₆₀ fullerene in the interstellar space have been discussed briefly in connection with the previous results on the effects of various types of electromagnetic radiation over C₆₀.     

Spontaneous Decay of Highly-Charged Fullerene Ions C60Z and C58z

Using isotope-resolved, two sector field mass spectrometric techniques we have identified and investigated quantitatively the energetics and kinetics (in particular the kinetic energy release, KER) of the spontaneous decay reactions C_60-2m^z+ → C_60-2m-p(z-1)+ ₊ C_p⁺ with m = 0 or 1, z ranging from 3 to 6 and p = 2 and 4. The obtained KER results are not compatible with the properties expected for a single-step fissioning reaction as described by the liquid drop model. Therefore the present data had to be interpreted by a different fragmentation mechanism. This novel reaction sequence, termed auto charge transfer (ACT) reaction, is initiated by the statistically driven neutral C₂ (or C₄₎ evaporation followed by an electron transfer process from the receding C₂ (or C₄) fragment to the remaining highly-charged fullerene ion thereby leading finally to the two charged reaction products observed in the exit channel of the decay reaction. Moreover, in the case that a C₂⁺ loss from C₆₀z+ is occurring in the first field-free region we have been able to demonstrate that it is possible to observe in the second field-free region a subsequent C₂ evaporation from the C₅₈(z-1)⁺ fragment ion.     

Thermally Activated Decay Processes of Isolated Superhot C60 in Molecular Beams

We have studied thermally activated decay processes of an ensemble of isolated superhot C₆₀ molecules in molecular beams by several different methods. Highly vibrationally excited C₆₀ molecules in effusive or supersonic beams (with average vibrational energy of 10-20 eV) were generated in an all ceramic, two-stage high temperature nozzle source. the decay kinetics due to various decay processes of the initially canonical ensemble was followed by a mass spectrometric methods for a large range of initial temperatures (T_o=1100 - 1950 K). the processes studied are: (1) fragmentation (C₂ emission) of the neutral C₆₀ (2) C₂ emission from the C⁺₆₀ ions (3) black-body like radiative cooling, and (4) delayed electron emission. the experiments described here are: (a) Depletion of the integrated C₆₀ flux. (b) Analysis of C₆₀ time-of-flight distributions. (c) Dependence of electron impact induced ionization/ fragmentation of C₆₀ upon its initial thermal excitation, and (d) Thermal energy dependence of delayed electron emission. It is shown that thermal kinetics models using a single set of independently measured parameters uniquely reproduce all the experimental observations. the models take into account the different cooling processes and their time evolution. We analyze in detail the evolution of the initially canonical vibrational energy distribution during the flight time to the detector as it is gradually being distorted due to evaporative and radiative cooling mechanisms. It is concluded that the correct parameters to be used for describing the thermally activated decay kinetics of superhot C₆₀ are activation energy of E_o = 4.3 - 4.8 eV for the neutral fragmentation channel C₆₀ → C₅₈ + C₂ and E₁=4.0 - 4.3 for the ion fragmentation channel C⁺₆₀→ C⁺₅₈ + C₂, and corresponding pre-exponential factors of A_o = A₁ = 2.5 × 10¹³ sec^-1. the emissivity coefficient for black body like radiation was found to be ε = 4.5 × 10^-5.     

Al3+/Yb3+/P5+掺杂对石英玻璃紫外透过和紫外激发荧光的影响

采用溶胶-凝胶法结合高温真空烧结工艺制备了不同浓度的Al³⁺/Yb³⁺/P⁵⁺掺杂石英玻璃。研究了P⁵⁺和Al³⁺的引入对Yb³⁺掺杂石英玻璃紫外透过和紫外激发荧光光谱, 以及Yb4d电子结合能的影响, 并初步探索了其机理。研究结果表明, Al³⁺/Yb³⁺/P⁵⁺掺杂石英玻璃在190~300 nm波段的吸收主要来源于O^2-→Yb³⁺的电荷迁移吸收, 其谱带位置和Yb4d电子结合能随Yb³⁺的第二配位元素(Al、Si、P)电负性增大向高能方向移动。真空烧结条件下, 引入Al³⁺会引发石英玻璃中Yb³⁺还原为Yb²⁺, 其典型的吸收峰位于330 nm处; 然而, 在Al³⁺/Yb³⁺共掺的基础上再引入P⁵⁺, 且P⁵⁺/Al³⁺摩尔比大于1时, 可以有效抑制Yb²⁺的形成。紫外光激发引起的近红外发光(976 nm)是电子从电荷迁移态弛豫到Yb³⁺激发态向基态跃迁的结果, 可见发光(525 nm)归因于Yb²⁺的5d→4f跃迁。本文研究结果对通过优化工艺和调整组分制备出高性能的Yb³⁺掺杂光纤具有一定的指导意义。     

Solubility of Fullerenes C60 and C70 in Seven Normal Alcohols and Their Deduced Solubility in Water

The solubilities of C₆₀ and C₇₀ at 25°C in seven normal alcohols obey the relationship InY = a + bX + cX², where Y is solubility and X is the Hildebrand solubility parameter of the solvent. Extrapolation to the solubility parameter of water yields solubilities in water of 1.3'10^-11 (C₆₀) and 1.3'10^-10(C₇₀) ng/ml with an uncertainty of one order of magnitude.     

Improved tribological properties of sputtered MoS2 films through N implantation

The effect of N⁺ implantation on the microstructural and tribological properties of r.f.-sputtered MoS₂ films was studied. The cross-section scanning electron micrographs show that, after N⁺ implantation, the loose column structure of the sputtered MoS₂ films increases in density. A decrease in film thickness of about 50% is also observed. The results of X-ray diffraction analysis show that N⁺ bombardment enhances the (100) edge plane orientation of the MoS₂ crystal in the film. The scratch test indicates an improved film-substrate adherence. The tribological test results indicate that N⁺ implantation yields a distinct enhancement in the wear life of the sputtered MoS₂ films. Compared with the as-deposited MoS₂ film, the wear life of the sputtered MoS₂ films implanted with 150 keV N⁺ at 1 × 10¹⁶ N⁺ cm⁻² shows a threefold increase in a relative humidity of 60%–70% and a twofold increase in a vacuum of 5 × 10⁻³ Pa. However, N⁺ implantation inreases the friction coefficient. The lubrication model of the N⁺-modified film is given.     

EPR of Graphite and Fullerenes

Analysis of the EPR results for graphite and fullerenes has led to the development of a model for the g-factor in follerene based on the analogy between graphite and fullerene. Pressure dependence of g-factor in C₆₀ powder confirms the validity of this model. ¹³C hyperfine splitting of_a0.36 mT in pristine fullerene is also reported. The g-factors of C₆₀^-1 and C₆₀^-3 in a solution and in a different K°C₆₀ fullerides are presented. C₆₀⁺ⁿ states should be described by the spectroscopic splitting factor larger than that of a free spin.     

GROUP TRANSFER AND DIMERIZATION PROCESSES OF C60(CN)2 UNDER ATMOSPHERIC PRESSURE IONIZATION CONDITIONS

Neutral and anionic C₆₀(CN)₂ were investigated with electrospray ionization (ESI) and atmospheric pressure chemical ionization (APCI) mass spectrometry. It was observed that its anions underwent cyano- group and oxygen transfer, and dimerization processes in ESI conditions to form C₆₀(CN)₃H^-, C₆₀(CN)₂(OH₂)^-, [C₆₀(CN)₃H]^-₂, [C₆₀(CN)₂(OH₂)]^-₂ and [(C₆₀)₂(CN)₂(OH)]^-. Meanwhile, neutral C₆₀(CN)₂, for which no signal was observed in ESIMS, showed a base peak corresponding to C₆₀(CN)₂Cl^- in APCIMS spectra with CHCl₃ used as solvent, while only a molecular ion peak corresponding to C₆₀(CN)^-₂ was observed for the toluene solution of neutral C₆₀(CN)₂ in the same conditions. Possible mechanisms for group transfer and dimerization were proposed based on these observations.     

INHIBITORY EFFECTS OF FULLERENE C60 DERIVATIVES ON ENDOTHELIUM-DERIVED RELAXATION IN RABBIT THORACIC AORTA

Inhibitory effects of newly synthesized fullerene C₆₀ derivatives 1 (C₆₀-bis(N,N-dimethylpyrrolidinium iodide)), 2 (C₆₀-proline-N-acetic acid) and 3 (C₆₀-ethylenediamine-N, N'-diacetic acid) on acetylcholine-induced relaxation in endothelium-intact rabbit thoracic aorta precontracted by phenylephrine (10^-6 M) were studied. Fullerene C₆₀ derivative 1 (3 × 10^-6 M), 2 (10^-5 M) and 3 (10^-5 M) reduced the maximum amplitude of the acetylcholine-induced relaxation without significantly changing the pD₂ values obtained from the concentration - response curves. In the presence of fullerene C₆₀ derivative 1 (10^-5 M) the acetylcholine-induced relaxation was eliminated and an acetylcholine-induced contraction was observed. These results suggest that fullerene C₆₀ derivative 1 strongly inhibits endothelium (nitric oxide)-dependent acetylcholine-induced relaxation in thoracic aorta of rabbit.     

Anomalous elastic properties of RF-sputtered amorphous TeO2+x thin film for temperature-stable SAW device applications

The anomalous elastic properties of TeO_2+x thin films deposited by rf diode sputtering on substrates at room temperature have been studied. The deposited films are amorphous, and IR spectroscopy reveals the formation of Te-O bond. X-ray photoelectron spectroscopy confirms the variation in the stoichiometry of TeO_2+x film from x = 0 to 1 with an increase in the oxygen percentage in processing gas composition. The elastic parameters of the films in comparison to the reported values for TeO_2+x single crystal are found to be low. However, the temperature coefficients of elastic parameters of all deposited films exhibit anomalous behavior showing positive values for TC(C₁₁) in the range (32.0 to 600.0) x 10^-40 C^-1 and TC(C¹¹) = (35.0 to 645.5) x 10^-4degC^-1 against the negative values TC(Cn) = -2.7 x 10^-4degC^-1 and TC(C₁₁) = -0.73 x 10^-4degC^-1 reported for TeO₂ single crystal. The variation in the elastic parameters and their temperature coefficients is correlated with the change in the three-dimensional network of Te-O bonding. The anomalous elastic properties of the TeO_2+x films grown in 100% O₂ are useful for potential application in the design of temperature stable surface acoustic wave devices.     

Electron Microscopic Investigations of Transformations from C60 to Diamond, Filament and Microcapillary

We report the transformation of C₆₀ into diamond by electron beam pulse annealing of flash evaporated films (at 10^-6 torr) of C,₆₀, or by direct evaporation of C₆₀ in helium (100 torr) atmosphere. The formation of filament and microcapillaries (tubulene-like structures) by electron beam annealing of the C₆₀ deposit is also reported.     

Penetration of Fullerene C60 Derivatives Through Biological Membranes

Penetration of fullerene C₆₀ in hydrated molecular-colloidal form (FMC) and various C₆₀ water-soluble derivatives (FDs) through membranes of human erythrocytes, platelets and symbiosomes (subcellular organelles of plant origin) were tested. The FDs bearing amino acids induced pronounced depolarization of symbiosome membranes energized with Mg-ATP. In erythrocytes and platelets incubated in K⁺-free medium in the presence of FCCP, FDs with malonic acid pendants promoted acidification of the intracellular medium thereby simulating an effect of the K⁺ ionophore valinomycin. Dissipation of ΔpH artificially induced on the plasma membrane of these cells was observed in the presence of C₆₀-γ-aminobutiric acid which, in addition, strongly stimulated Mg-ATP-dependent generation of membrane potential on symbiosome membranes. C₆₀-Arg was shown to dissipate K⁺-diffusion potential on erythrocyte membranes induced by valinomycin. Fullerene C₆₀ used in hydrated molecular-colloidal form (FMC) also entered symbiosomes and platelets as evidenced by the quenching of the fluorescence of the Ca²⁺ indicator chlorotetracycline localized in the interior of these cells. These findings provide evidence for ease of permeation of these fullerene-based compounds through biological membranes from different type cells.     

Ion Formation and Fragmentation in Gas-Phase Fast-Atom Bombardment Mass Spectrometry of C60

The observation of multiply-charged ions C₆₀^Z+ (z=1-4) and fragment ions (C₆₀ - C_2n)^z+ (z=1-4, n=1-12) has been reported using a new ionization/ collision technique, called gas-phase fast-atom bombardment with a high-energy (8 keV) helium beam.     

Raman Spectroscopy of the Charge Transfer Complex (TTF)x C60 Br8

We report Raman studies on powder samples of the charge transfer complex (TTF)_x C₆₀Br₈ at room temperature. The phonons show considerable softening with respect to the frequencies observed in the Raman spectrum of solid C₆₀ Brg. The strongest mode at 1464 cm^-1 in C₆₀Br₈ is red shifted to a doublet with peaks at 1414 and 1421 cm^-1, implying an average phonon softening Δω of -47 cm^-1. A comparison with the phonon softening of the corresponding A_g(2) mode in alkali-doped C₆₀ (Δω ~ - 36 cm^-1 for A₆C₆₀, A = K, Rb or Cs) suggests that 8 electrons are transferred per C₆₀Br₈ molecule in the charge transfer complex. The mode at 503 cm_--1 in C₆₀Br₈ is shifted upwards, similar to that in A₆ C₆₀ compounds.     

Ion irradiation hardening of C60 thin films

The nanoindentation technique is used to measure the hardness and the Young’s modulus of ion irradiated C₆₀ films, 70 nm thick, deposited on a Silicon substrate. An increase of hardness from 1.3 GPa for the pristine sample to 10 GPa after irradiation with 800 keV Bi⁺ and N²⁺ ions was observed. The Young’s modulus also increases from 60–150 GPa after the irradiation. The results are discussed in terms of the damage and amorphization produced as consequences of the electronic and nuclear energy transference due to the irradiation.     

Study of microstructure of epitaxial fullerenes films

A comprehensive study was made on the structure of epitaxial thin films of C₆₀ and C₇₀ by means of transmission electron microscopy. Both the films show similar face-centered cubic structure and are epitaxial on (001) mica with close-packed plane parallel to the substrate surface. Two main kinds of defects-stacking faults and twins-were observed and are discussed. The effect of the remaining C₇₀ impurity on the crystal orientation of C₆₀ films was studied by comparing different samples made from high-purity fullerene and C₆₀/C₇₀ mixtures. The results show that there is a higher density of planar defects in the films containing larger amounts of impurities: moreover, some faint anomalous reflections located at so-called 2a₀ fcc reciprocal lattice points were also detected, probably as a result of C₇₀ contamination. Finally, it is found that stacking disorders can be easily increased by keeping the high-quality pure C₆₀ film in air at room temperature for a few weeks, implying the instability of the crystal orientation of the epitaxial fullerene films.     

Magnetic Properties of Some Fullerene Compounds

Magnetic properties of some fullerene intercalation compounds are detailed. A few examples are presented including properties of 1) Acceptors: MoF₆ From magnetic measurements the existence of positively charged C₆₀ (C₆₀⁺) can be inferred 2) Donnors: Yb_xC₆₀ and Eu₃C₆₀ compounds. Magnetic properties of (Yb_xC₆₀) are dominated by crystal field effects. A high field magnetic transition (17 T at 4 K) occurs in Eu₃C₆₀ associated with a large hysteresis of the magnetization and relaxation effects. This complex magnetic behaviour is attribued to Eu²⁺.