蓝宝石上射频溅射沉积CeO2外延缓冲层

研究了基片温度、溅射功率对采用射频溅射沉积在(1102)蓝宝石基片上的CeO2薄膜生长的影响.过低的沉积温度、溅射功率都会导致CeO2薄膜呈[111]取向生长.在基片温度为700～750 ℃,溅射功率为100～150 W,溅射气压为14 Pa下沉积了高质量[00l]取向的CeO2缓冲层.通过X射线衍射和原子力显微镜表征CeO2薄膜的结构和表面形貌.在最优化条件下制备的CeO2薄膜具有优良的面内面外取向性和平整的表面.在CeO2缓冲层上制得的YBa2Cu3O7-δ(YBCO)超导薄膜为完全[00l]取向,面内取向性良好,并具有优越的电学性能,其临界转变温度(Tc)为89.5 K,临界电流密度Jc(77 K,0T)约为1.8×106 A/cm2,微波表面电阻Rs(77 K,10 GHz)大约为 0.30 mΩ.     

Ni掺杂对Cu_3N薄膜结构与性能的影响

采用射频反应磁控溅射方法在玻璃基底上制备了Ni掺杂Cu3N薄膜,并研究了Ni掺杂对Cu3N的结构、电学性能和光学性能的影响。研究发现:Ni的加入使得Cu3N薄膜的(111)晶面向小角度偏移;随着Ni含量的增加,Cu3N薄膜的电阻率从1450×10-6Ω.cm减小到184×10-6Ω.cm,光学能隙从1.09eV增加到1.52eV。     

磁控溅射法制备纳米Cu薄膜及其微结构的研究

采用磁控溅射法制备出以ITO为基底的纯Cu薄膜,考察溅射时间和基底温度等工艺条件对生长Cu薄膜的影响.用电子扫描显微镜(SEM)、X射线衍射仪(XRD)对薄膜的形貌、厚度和结构进行表征.实验结果表明:在一定范围内调控衬底温度和溅射时间,可获得不同形貌、尺寸和厚度的Cu薄膜,所得薄膜的晶体结构为面心立方结构,均沿(111...     

沉积温度对AZO薄膜性能的影响

在采用直流磁控溅射制备AZO(Aluminum Doped Zinc Oxide,掺铝氧化锌)薄膜的过程中,AZO薄膜的光电性能取决于镀膜过程中的各种工艺参数,包括溅射气压、沉积温度、溅射功率和靶基距等。本文主要研究在固定其它工艺参数不变的情况下,通过改变沉积温度在不同的温度下分别制备AZO薄膜,利用SEM、X射线衍射仪等测试不同AZO薄膜的微观结构,并分析研究不同沉积温度下制备AZO薄膜光电性能及结构的变化特性,以筛选出制备高质量AZO膜的最佳沉积温度。     

磁控溅射工艺参数对NdFeB薄膜表面形貌及相结构的影响

本文对直流磁控溅射法制备NdFeB薄膜工艺进行了研究.采用单晶硅为基体材料,在不同的溅射功率、溅射气压、溅射时间等条件下制备薄膜.之后对薄膜进行了SEM、AFM、XRD分析结果表明,NdFeB薄膜沉积速率、表面形貌及相结构与溅射功率、溅射气压、溅射时间密切相关.并根据实验结果给出优化的NdFeB薄膜制备工艺.     

ITO薄膜射频磁控溅射法制备及性能研究

以10%SnO2和90%In2O3(以质量计)烧结成的ITO氧化物陶瓷为靶材,采用射频磁控溅射法在玻璃基片成功地制备出光电性能优异的ITO透明导电薄膜。研究了基片温度和氧分压溅射工艺参数对ITO薄膜的结构和光电性能的影响。实验结果表明,采用氧化铟锡陶瓷靶射频磁控溅射制备的ITO薄膜沿(222)晶面生长,薄膜紫外透射光谱的吸收截止边带随着衬底温度和氧分压的升高向短波长方向漂移。     

高熵合金AlCrNbSiTiV氮化物薄膜溅镀参数的优化

以AlCrNbSiTiV为靶材,用反应式磁控溅镀系统分别在住友BNX20刀具和硅晶片上沉积高熵合金氮化物(AlCrNbSiTiV)N薄膜。采用田口方法的L9(34)正交表考察了沉积时间、基材偏压、溅射功率和基材温度对沉积速率、薄膜硬度和刀具寿命的影响,通过方差分析(ANOVA)确定了影响各性能的主要因素。对信噪比(S/N)进行灰关联分析以实现多目标优化,得出最佳工艺参数为:沉积时间20min,基材偏压-100V,溅射功率250W,基材温度400°C。在该条件下,沉积速率为17.28nm/min,薄膜硬度达到2814HV,刀具寿命2.50m。     

石墨表面磁控溅射钛膜的结构与工艺参数研究

为解决石墨表面制备的不粘涂层结合力低的问题，可采用钛薄膜作为过渡层以提高结合力。本文采用磁控溅射技术在石墨基片表面制备钛薄膜，通过优化溅射工艺参数，提高钛薄膜的附着力。通过正交试验设计研究溅射功率、溅射气压和沉积时间对钛薄膜组织结构、表面粗糙度以及附着力的影响。利用扫描电镜（SEM）等分析了钛薄膜的微观形貌、物相结构及表面粗糙度，进行划格试验评估了薄膜的附着力。研究得到优化工艺参数为：溅射功率200 W，溅射气压1.2 Pa，沉积时间50 min。薄膜微观呈现岛状结构，颗粒尺寸约150 nm。钛薄膜为密排六方α-Ti结构，沿（002）晶面择优生长，这可能与石墨基体的片层状结构有关。溅射工艺参数的优化可以有效提高钛薄膜与石墨基体的附着力。     

Mo背电极对CIGS吸收层生长特性的影响

研究了利用单一四元靶材进行一步溅射法制备的CIGS薄膜的特性。研究了工作气压、衬底温度、Mo背电极对CIGS薄膜性能的影响。研究发现,当CIGS直接沉积在玻璃基底上时,一步溅射CIGS薄膜的优先取向和结晶度受工作气压和衬底温度的影响。而在器件制备方面,Mo背电极主导了CIGS薄膜的生长行为,并诱导其形成了较大的CIGS晶粒尺寸和较好的结晶度。最后,采用一步溅射法在0.07～2.66Pa的工作气压下制备了CIGS器件,最高效率达到8.67%。     

磁控溅射AZO工艺中沉积温度的研究

在采用磁控溅射制备AZO薄膜的过程中,AZO薄膜的光电性能取决于镀膜过程中的各种工艺参数,包括:溅射气压、沉积温度、溅射功率、靶基距等。本文主要研究在固定其它工艺参数不变的情况下,通过改变玻璃基板沉积温度在200℃、250℃、300℃、350℃、400℃、450℃、500℃的情况下分别制备AZO薄膜,通过分析研究玻璃基板沉积温度变化对制备AZO薄膜光电性能及结构的影响,筛选出制备高质量AZO膜的最佳沉积温度。     

Application of sputtered ceramic TiC/a:C thin films with different structures by changing the deposition parameters

Titanium carbide-based thin films have been produced by DC magnetron sputtering. It was demonstrated that the same technology with changing of the deposition parameters, such as deposition temperature or power of Ti target, resulted in the preparation of TiC/a:C thin films with various structures. The structure of thin films and volume fraction of amorphous and crystal phases were precisely tailored by the control of deposition parameters. These ceramic nanocomposite TiC/a:C thin films according to their various structures, hence, their different mechanical, tribological, or wetting parameters can be used in wide range of applications.     

Aluminum Nitride Thin Films on an LTCC Substrate

Aluminum nitride thin films deposited on a low-temperature co-fired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c -axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25-W bias. Photoluminescence spectrum in the wavelength range of 350–650 nm was analyzed to prove the involvement of potential oxygen-related defects in the thin films.     

CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target

Cu(In_1−xGa_x)Se₂ (CIGS) thin films were prepared by RF magnetron sputtering from a single quaternary target at multiple processing parameters. The structural, compositional, and electrical properties of the as-deposited films were systematically investigated by XRD, Raman, SEM, and Hall effects analysis. The results demonstrate that by adjusting the processing parameters, the CIGS thin films with a preferential orientation along the (112) direction which exhibited single chalcopyrite phase were obtained. The films deposited at relatively higher substrate temperature, sputtering power, and Ar pressure exhibited favorable stoichiometric ratio (Cu/(In+Ga):0.8–0.9 and Ga/(In+Ga):0.25–0.36) with grain size of about 1–1.5 µm, and desirable electrical properties with p-type carrier concentration of 10¹⁶−10¹⁷ cm⁻³ and carrier mobility of 10–60 cm²/Vs. The CIGS layers are expected to fabricate high efficiency thin film solar cells.     

Ultra Thin Organic and Polymer Films

Abstract

Preparation of ultra thin organic and polymer films could be divided into two methods. One is the wet process such as Langmuir-Blodgett (LB), spreading, dipping and casting methods. The other is dry processing, such as vapor deposition, sputtering, chemical vapor deposition, plasma polymerization and vapor deposition polymerization methods. Of these methods, the LB method has been attractive for the last decade to prepare a monolayer film, however, the vapor deposition method has also attracted attention for the preparation of well organized ultra thin films. It is important to investigate a molecular assembly in terms of the extent of aggregation, the crystalline regularity and their orientation in the thin film, since they are closely related to the physical, electrical and functional properties. This review focuses on an evaluation of the structure, molecular assembly and orientation in the thin films prepared by the LB and vapor deposition methods.     

Deposition of Indium Tin Oxide Films on Acrylic Substrates by Radiofrequency Magnetron Sputtering

Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (<80°C) and low rf power (<28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μ made these sputtered ITO films applicable to infrared mirrors.     

(AlCrNbSiTiV)N高熵合金氮化薄膜溅镀参数的灰关联分析优化

采用直流反应式磁控溅镀法在硅晶片和住友刀具BN2000上制备(AlCrNbSiTiV)N高熵合金氮化薄膜。通过正交试验考察了溅镀功率、沉积温度、氮氩气流量比和基材偏压对薄膜的摩擦因数、硬度和刀具磨损的影响。对信噪比进行灰关联分析,以实现多目标优化,得出最佳工艺参数为:溅镀功率200 W,沉积温度200°C,氮氩气流量比0.3,基材偏压100 V。该条件下所得薄膜的摩擦因数为0.46,显微硬度为1243.72 HV,刀具磨损最小。     

Preparation of Highly Oriented Aluminum Nitride Thin Films on Polycrystalline Substrates by Helicon Plasma Sputtering and Annealing

Highly c -axis-oriented aluminum nitride (AlN) thin films were prepared on polycrystalline Si₃N₄ and SiC substrates by helicon plasma sputtering. The difference in the substrate materials scarcely influenced the crystal structures of the films. The full width at half-maximum (FWHM) of the X-ray rocking curves of the films was 3.2°, which is the smallest value for AlN thin films deposited on polycrystalline substrates to our knowledge. Annealing at 800°C in vacuum decreased the FWHM from 3.2° to 2.8°. The structure of the films was densely packed and consisted of many fibrous grains. The films developed c -axis orientation on the polycrystalline substrates, because the interaction between the films and substrate surfaces was small, and (100) and (110) AlN planes grew preferentially. The films were piezoelectric and generated electrical signals in response to mechanical stress.     

非晶硅太阳能电池背反ZnO:Al薄膜制备

以ZnO:Al(2%Al2O3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响。结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响。ZnO:Al的电阻率主要取决于衬底温度和溅射功率。综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反应腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10-4Ωcm的ZnO:Al薄膜。制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池。与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%。     

Transparent and conductive indium tin oxide/polyimide films prepared by high‐temperature radio‐frequency magnetron sputtering

A highly transparent and thermally stable polyimide (PI) substrate was prepared and used for the fabrication of indium tin oxide (ITO)/PI films via radio‐frequency magnetron sputtering at an elevated substrate temperature. The effect of the deposition conditions, that is, the oxygen flow rate, substrate temperature, sputtering power, and working pressure, on the optical and electrical properties of the ITO/PI films were investigated from the microstructural aspects. The results indicate that the optical and electrical properties of ITO were sensitive to the oxygen. Moreover, it was beneficial to the improvement of the ITO conductivity through the adoption of a high substrate temperature and sputtering power and a low working pressure in the deposition process. A two‐step deposition method was developed in which a thick bulk ITO layer was overlapped by deposition on a thin seed ITO layer with a dense surface to prepare the highly transparent and conductive ITO/PI films. The ITO/PI film after annealing at 240°C gave a transmittance of 83% and a sheet resistance of 19.7 Ω/square. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 42753.     

Effects of Fabrication Conditions on the Crystallinity,Barium Deficiency,and Conductivity of BaZr0.8Y0.2O3–δ Films Grown by Pulsed Laser Deposition

Yttrium‐doped barium zirconate (BZY) thin films were deposited on MgO and sapphire substrates using a pulsed‐laser deposition (PLD) method with varying deposition rates. The films deposited with a low deposition rate exhibited highly oriented microstructures with little grain boundaries. The electrical conductivities of these films were higher than those of the films, deposited with high deposition rates, which showed little‐oriented polycrystalline microstructure. While the films deposited on the MgO substrates had a stoichiometric composition, those deposited on the sapphire substrates had a high barium deficiency, which was possibly due to the differences in the crystal structure and large lattice mismatch between the sapphire substrate and the BZY film. The electrical conductivity of the highly oriented BZY film, grown on MgO substrate with a low deposition rate, showed little barium deficiency and the highest conductivity value that is higher than the typical conductivity of sintered pellets.