Delay‐locked loop based clock and data recovery with wide operating range and low jitter in a 65‐nm CMOS process

A delay‐locked loop (DLL) based clock and data recovery (CDR) circuit with a half‐rate clock is proposed. The CDR includes a coarse and a fine tuned block, in which the novel coarse and fine phase detectors form closed loops. It is designed in a 65‐nm complementary metal‐oxide semiconductor (CMOS) process using a 1.2‐V supply voltage. The simulation results show that it can cover a wide operating range from 500 Mbps to 8 Gbps and the corresponding peak‐to‐peak jitters are 1.63 ps and 0.96 ps, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

A 1‐Gbps reference‐less burst‐mode CDR with embedded TDC in a 65‐nm CMOS process

A reference‐less all‐digital burst‐mode clock and data recovery circuit (CDR) is proposed in the paper. The burst‐mode CDR includes a coarse and a fine time‐to‐digital converter (TDC) with embedded phase generator. A low‐power current‐starved inverter is employed as the delay unit of the fine TDC to acquire the high measurement resolution. A calibration method to diminish the inherent delay is used to reduce the quantization error of the recovery clock. The proposed CDR is fabricated in a 65‐nm CMOS process. Experiment results show that the CDR operates from 0.9 to 1.1 Gbps and have a 13‐bit consecutive identical digits (CIDs) tolerance.     

A small fully digital open‐loop clock and data recovery circuit for wired BANs

This paper proposes a new open‐loop and low complexity (small size) fast‐lock synchronization circuit for clock and data recovery in wearable systems. The system includes sensors embedded in textile and connected by conductive yarns. Synchronization is based on the open‐loop selection of the correct phase of the receiver clock synchronously with the incoming signal. The clock generator of the receiver is an autonomous oscillator set to operate at the same nominal frequency. The circuit lock time is at most one clock cycle, faster than all methods based on phase‐locked loops or delay‐locked loops. The circuit can be used for baseband communication independently of the signal coding method used in the physical layer, making it suitable for many applications. The fully digital circuit (including non‐return‐to‐zero inverted decoder) occupies 0.0022 in a 0.35 complementary metal‐oxide semiconductor (CMOS) process, a smaller implementation than many existing circuits, and supports a maximum system clock frequency of 70 for a 35‐data rate. Experimental results demonstrate that the proposed circuit robustly generates a synchronous clock for data recovery. The circuit is suitable for systems that tolerate some jitter but requires fast lock time, small size, and low energy consumption. Copyright © 2015 John Wiley & Sons, Ltd.     

A simultaneously bidirectional inductively coupled link in a 0.13‐µm CMOS technology

A simultaneously bidirectional inductively coupled link has been developed to provide higher signaling bandwidth for a given inductively coupled channel. Two types of echo signals, that is, the resistive and inductive echo signals, are canceled without an inductive replica load to save silicon area. The resistive echo signal is canceled with a replica driver driving a resistive replica load, while the inductive echo signal is canceled by deliberately controlling the timing of a receiver comparator. The prototype implemented in a 0.13‐µm complementary metal–oxide–semiconductor (CMOS) technology occupies 0.019 mm² including an on‐chip channel inductor and shows 9.1‐pJ/b energy efficiency at 3.0‐Gbps signaling bandwidth, that is, 1.5 Gbps in each signaling direction. Copyright © 2016 John Wiley & Sons, Ltd.     

A 5.25‐V‐tolerant bidirectional I/O circuit in a 28‐nm CMOS process

A 5.25‐V‐tolerant bidirectional I/O circuit has been developed in a 28‐nm standard complementary metal‐oxide‐semiconductor (CMOS) process with only 0.9 and 1.8 V transistors. The transistors of the I/O circuit are protected from over‐voltage stress by cascode transistors whose gate bias level is adaptively controlled according to the voltage level of the I/O pad. The n‐well bias level of the p‐type metal‐oxide‐semiconductor transistors of the I/O circuit is also adapted to the voltage level of the I/O pad to prevent any junction leakage. The 5.25‐V‐tolerant bidirectional I/O circuit occupies 40 µm × 170 µm of silicon area. Copyright © 2014 John Wiley & Sons, Ltd.     

Non‐idealities in linear CDR phase detectors

The effects of circuit non‐idealities in a “Hogge”‐type phase detector are examined. Using a behavioral model for each circuit block, it is shown that various circuit non‐idealities introduce static phase offset in the phase detector, reduce the monotonic range of its transfer characteristics and eventually degrade the capture range and jitter tolerance of the clock and data recovery (CDR) loop. Lower bounds on the bandwidths of the various blocks in the CDR are also established in order to avoid variations of the transfer characteristics. Copyright © 2011 John Wiley & Sons, Ltd.     

A 12‐bit 10‐MS/s SAR ADC with a binary‐window DAC switching scheme in 180‐nm CMOS

This paper presents an energy‐efficient 12‐bit successive approximation‐register A/D converter (ADC). The D/A converter (DAC) plays a crucial role in ADC linearity, which can be enhanced by using larger capacitor arrays. The binary‐window DAC switching scheme proposed in this paper effectively reduces DAC nonlinearity and switching errors to improve both the spurious‐free dynamic range and signal‐to‐noise‐and‐distortion ratio. The ADC prototype occupies an active area of 0.12 mm² in the 0.18‐μm CMOS process and consumes a total power of 0.6 mW from a 1.5‐V supply. The measured peak differential nonlinearity and integral nonlinearity are 0.57 and 0.73 least significant bit, respectively. The ADC achieves a 64.7‐dB signal‐to‐noise‐and‐distortion ratio and 83‐dB spurious‐free dynamic range at a sampling rate of 10 MS/s, corresponding to a peak figure‐of‐merit of 43 fJ/conversion‐step.     

A 0.5‐V 5.9‐fJ/conversion‐step SAR ADC in 0.18‐μm CMOS

In this paper, we present a 434‐nW 8‐bit successive approximation register analog‐to‐digital converter (SAR ADC). We mainly consider the optimization of power consumption. A modified split‐capacitor array involving a novel switching scheme is proposed, which reduces the switching power consumption to just 13.8 for the single‐ended scheme without any losses in performance. Based on the SMIC CMOS 0.1 μm EEPROM 2P4M process, the simulation results show that at 0.5 V supply voltage, 300 kS/s sample frequency, and 4.98 kHz input frequency, the ADC achieves an signal‐to‐noise‐plus‐distortion ratio (SNDR) of 49.58 dB and effective number of bits (ENOB) of 7.94, and consumes 434 nW, resulting in a figure of merit of 5.9 fJ/conversion step. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.