Electrochromism in spray deposited iridium oxide thin films

Electrochromic iridium oxide thin films were deposited onto fluorine doped tin oxide coated glass substrates from an aqueous iridium chloride solution by pneumatic spray pyrolysis technique. The as-deposited samples were X-ray amorphous. The electrochromic properties of thin films were studied in an aqueous electrolyte (0.5N H₂SO₄) using cyclic voltammetry (CV), chronoamperometry (CA) and spectrophotometry. Iridium oxide films show pronounced anodic electrochromism owing to Ir⁺⁴ ↔ Ir⁺³ intervalency charge transition. The reversibility of cyclic process in Ir oxide films is found to be higher, which increases with increasing number of colour-bleach cycles.     

Tunable performance of BaZr0.2Ti0.8O3 thin films prepared by pulsed laser deposition

BaZr_0.2Ti_0.8O₃ (BZT) thin films were deposited at various oxygen pressures (0–60 Pa) on Pt/TiO_x/SiO₂/Si substrates by using pulsed laser deposition. The crystallinity of the thin films initially improves but subsequently deteriorates with increasing oxygen pressure. The tunable performance of BZT thin films is associated with crystal structure and oxygen vacancies. The theoretical mechanisms for the relative permittivity and dielectric loss as a function of electric field are proposed. The frequency response of dielectric properties is also investigated and the variation mechanisms are supposed. Eventually, BZT thin films fabricated under 15 Pa have the highest tunability (70.3% at 400 kV/cm) with the largest relative permittivity of 486, the lowest loss tangent of 0.021 and the maximum commutation quality factor of 7744.8. The results imply that BZT thin films are potential candidates for tunable device applications.     

Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Group IVB metal oxides have demonstrated many potential applications in a variety fields owing to their excellent optical, mechanical, electrical, chemical and thermal properties. In this work, ternary oxides Zr_xHf_1-xO₂ films with variable compositions were deposited by pulsed laser co-ablation of a Zr target and a Hf target in an oxygen plasma generated by electron cyclotron resonance microwave discharge of O₂ gas. The oxygen plasma provided an environment containing a high concentration of reactive oxygen species for synthesizing oxides with the Zr and Hf species ablated from the Zr and Hf targets. The structure of the deposited films was characterized and the optical properties were evaluated together with the examination of the effects of post-deposition annealing on the structure and optical properties. The ternary Zr_xHf_1-xO₂ films are much alike with binary ZrO₂ and HfO₂ films in structure and optical properties. They have a monoclinic structure and are highly transparent in a wide spectral region from mid-ultraviolet to mid-infrared. The ultraviolet absorption edge and optical band gap vary slightly with the pulse energies of the laser beams ablating the targets. Annealing in N₂ resulted in the improvement in the film structure.     

Preparation and characterization of Al-doped ZnO piezoelectric thin films grown by pulsed laser deposition

Undoped and Al-doped ZnO (AZO) thin films (Al: 3, 5 at%) using a series of high quality ceramic targets have been deposited at 450 ºC onto glass substrates using PLD method. The used source was a KrF excimer laser (248 nm, 25 ns, 2 J/cm²). The study of the obtained thin films has been accomplished using X-ray diffraction (XRD), M-lines spectroscopy and Rutherford backscattering spectroscopy (RBS). XRD patterns have shown that the films crystallize in a hexagonal wurtzite type structure with a highly c-axis preferred (002) orientation, and the grain sizes decrease from 37 to 25 nm with increasing Al doping. The optical waveguiding properties of the films were characterized by means of the prism-coupling method. The distinct M-lines of the guided transverse magnetic (TM) and transverse electric (TE) modes of the ZnO films waveguide have been observed. The M-lines device has allowed determination of the accurate values of refractive index and thickness of the studied ZnO and AZO thin films. An evaluation of experimental uncertainty and calculation of the precision of the refractive index and thickness were developed on ZnO films. The RBS results agree with XRD and m-lines spectroscopy measurements.     

Influence of oxygen pressure on microstructure and dielectric properties of lead-free BaTi0.85Sn0.15O3 thin films prepared by pulsed laser deposition

Lead-free barium tin titanate BaTi_0.85Sn_0.15O₃ (BTS) ferroelectric thin films have been deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. The structure and dielectric properties of thin films deposited at various oxygen pressures are investigated systematically. By optimizing the oxygen pressure during the deposition, the structure and dielectric properties are improved. The thin films grown at 15 Pa have the best crystal quality and the largest grain size, which result in the enhancement of the dielectric properties. The dielectric constant and loss tangent show the similar trend in the entire oxygen pressure range. The influence mechanisms of the oxygen pressure on the structure and dielectric properties are proposed. The BTS thin films deposited at 15 Pa with large figure of merit (FOM) of 81.1, high tunability of 72.1%, moderate dielectric constant of 341, low loss tangent of 0.009 are considered to be appropriate as a field tunable ferroelectric material for electrically tunable devices.     

Assessment of Cr doping on TiO2 thin films deposited by a wet chemical method

Undoped and Cr-doped TiO₂ thin films were synthesized by the dip-coating sol-gel process with titanium isopropoxide and chromium (III) chloride hexahydrate being used as the precursors. The chromium concentrations changed for different molar ratios, namely, 2, 4, and 8 wt.%. The samples, coated on glass substrates, were later annealed in air at 450 °C for 60 min. The influence of Cr doping on the structural, surface chemical, and optical properties of the samples was studied by several techniques, including EDS, Raman, UV–Vis, RT-PL, and XPS spectroscopies, as well as SEM and XRD. The diffraction patterns indicated that all the films displayed the anatase structure with the crystallite size decreasing with chromium doping. The same structure was confirmed by Raman spectroscopy measurements. UV–Vis absorption spectra of the samples showed a red shift of the fundamental absorption edge in the visible range following the increase of Cr doping concentration. In addition, the RT-PL study revealed that the dopant incorporation causes a decrease in the PL intensity. The EDS analysis revealed the presence of Ti, O, and Cr in the materials. Moreover, from high-resolution XPS Ti 2p spectra, titanium was found to be in the Ti⁴⁺ oxidation state evidencing the formation of TiO₂, while the Cr 2p fitting analysis showed that chromium is present in the Cr (III) and Cr-metal states.     

Femtosecond pulsed laser deposition of silicon thin films

Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.     

Ferroelectric properties of pure ZrO2 thin films by chemical solution deposition

Ferroelectricity in pure zirconia (ZrO₂) thin films, manufactured on Si (100) substrates via the chemical solution deposition method using all-inorganic aqueous salt precursor, has been demonstrated for the first time. The influence of thickness on the crystalline structure and ferroelectric properties of the thin films were measured and showed that they were strongly affected by the film thickness. The structural data indicated that as the film thickness increased from 30 nm to 50 nm, the m-phase fraction increased, and a phase transition from orthorhombic to cubic and then tetragonal occurred near the main diffraction peak of 30.7°. The lowest m-phase fraction of 15.4% was obtained in the pure ZrO₂ film with a thickness of 30 nm, and after 10³ field cycling, it exhibited the highest relative permittivity of 39.6 as well as the highest residual polarization of 8.5 μC/cm².     

Effect of substrate temperature on structural and electrical properties of BaZr0.2Ti0.8O3 lead-free thin films by pulsed laser deposition

Barium zirconate titanate (BaZr_0.2Ti_0.8O₃, BZT) 250 nm thick thin films were fabricated by pulsed laser deposition and the influence of the substrate temperature on their preferred orientation, microstructure, morphology and dielectric properties was investigated. Dielectric measurements indicated the (1 1 0)-oriented BZT thin films deposited at 750 °C to show good dielectric properties with high dielectric constant (~500 at 100 kHz), low loss tangent (<0.01 at 100 kHz), and superior tunability (>70% at 400 kV/cm), while the largest figure of merit was 78.8. The possible microstructural background responsible for the high dielectric constant and tenability is discussed. In addition, thin films deposited at 750 °C with device quality factor of 8738 and dielectric nonlinearity coefficient of 1.66×10⁻¹⁰ J/C⁴m⁵ were demonstrated.     

Influence of rare earth addition in cobalt ferrite thin films obtained by pulsed laser deposition

The influence of rare earth (RE = Dy, Gd, Yb) ion doping on the structural, magnetic and optical properties of cobalt ferrite thin films was studied. CoFe_2-xRE_xO₄ (x = 0.01; 0.03; 0.05; 0.1; 0.2; 0.3) films were obtained by pulsed laser deposition on silicon substrates. The X-ray diffraction and Raman spectroscopy results on the bulk materials, which were used as targets during deposition, revealed the formation of residual phases as the concentration of RE dopant was increased. However, the annealed thin films presented diffraction lines and vibrational modes corresponding only to cobalt ferrite. A lower crystallinity of the deposited samples was observed when higher RE concentrations were used. Due to the substitution of Fe by RE elements which possess large ionic radii, the lattice parameter of the thin films presented a monotonous increase. The magnetic response of the nanostructures was correlated to the magnetic moment of the RE dopant and to the structural properties of the films. The optical bandgaps derived from the reflectance spectra presented an increasing trend as the Yb and Dy concentrations were augmented.     

Defect induced magnetic transition in Co doped CeO2 sputtered thin films

Cobalt-doped cerium dioxide thin films exhibit room temperature ferromagnetism due to high oxygen mobility in doped CeO₂ lattice. CeO₂ is an excellent doping matrix as there is a possibility of it losing oxygen while retaining its structure. This leads to increased oxygen mobility within the fluorite CeO₂ lattice, leading to formation of Ce³⁺ and Ce⁴⁺ species. Magnetic ceria materials are important in several applications from magnetic data storage devices to magnetically recoverable catalysts. In this paper, the room temperature ferromagnetism of rf sputtered Co doped CeO₂ thin films is reported whereas undoped CeO₂ thin films exhibit paramagnetic behavior. The ferromagnetic properties of the Co doped films were explained based on oxygen vacancies created by Co ions in Ce sites. This is further supported by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman. Change in surface morphology due to Co doping of the samples were analyzed using atomic force microscopy (AFM).     

Thermoelectric properties of thin films of bismuth telluride electrochemically deposited on stainless steel substrates

Bismuth telluride thin films have been synthesized by electrochemical deposition onto stainless steel substrates from acidic solutions. The influence of deposition variables on film composition, morphology and crystal orientation associated with the growth of the film was investigated by means of constant potential deposition and pulsed potential deposition. In-plane thermoelectric and transport properties of the electrodeposited films were measured. The carrier concentration of the electrodeposited films was found to be one order of magnitude larger than typically reported for optimized bulk bismuth telluride, which explains the unusually low Hall mobility and Seebeck coefficient values found for the electrodeposited films. Pulse deposited films showed slightly lower electrical resistivity and higher Seebeck coefficient due to the lower porosity and less preferred crystal orientation of the films compared to the continuously deposited films. Improvements of the film properties are necessary to make them viable for applications.     

Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry.     

Modified electrical properties of chemical solution deposited epitaxial BiFeO3 thin films by Mn substitution

The effect of Mn substitution on microstructure and electrical properties of epitaxial BiFeO₃ (BFO) thin films grown by an all-solution approach was investigated. Raman analysis reveals that the Mn atoms substitution at Fe sites can result in Jahn-Teller distortion and thus lead to the weakness of long-range ferroelectric order. In addition, the break-down characteristics of BFO thin films are improved with the increase of Mn atoms content, although the leakage current is gradually increased. Meanwhile, the grain size, the dielectric constant and loss are also increased with the increase of Mn content. The P-E hysteresis loops and PUND results demonstrate that the intrinsic ferroelectric polarization is effectively improved with Mn atoms substitution as the grain size increased and Mn atoms play a role of nucleation sites. However, the ferroelectric properties are deteriorated with the excess substituted Mn content due to the higher leakage current.     

A comprehensive study on the effects of alternative sulphur precursor on the material properties of chemical bath deposited CdS thin films

Chemical bath deposition (CBD) method was used to deposit CdS thin films on soda-lime glass substrates by using n-methylthiourea (NTU) as an alternative sulphur source and were compared to typical thiourea (TU) precursor. The sulphur source concentration was varied from 0.01 M to 0.1 M and the impact on the microstructural, surface morphology, optical and electrical properties of the grown films were studied. Increasing n-methylthiourea concentration in the precursor yielded thinner films that are less than 100 nm thickness, surface morphology with average surface roughness of 6.4 nm, larger granular structure, wider band gap at 2.3 eV–2.6 eV range. Raman spectroscopy revealed Raman peak at 303 cm-1. In contrast, an increase in thiourea concentration resulted in thinner amorphous films, less distinct granular structure, narrower energy band gap from 2.3 eV to 2.4 eV and a resonance Raman peak at 302 cm-1. CdS thin film deposited from n-methylthiourea precursor at higher precursor concentration of 0.1 M showed better electrical properties such as lower resistivity and higher carrier mobility compared to the thin film deposited from typical thiourea precursor.     

Near room temperature tunability of thermochromic VO2 thin films prepared via thermal oxidation method,influence of CO2:N2 gas flux ratios

In this study, we have investigated the thermochromic characterizations of VO₂ thin films synthesized by the thermal oxidation method. The oxidation process of a DC sputtered metallic vanadium layer on glass substrates, at 450 °C for 1 h, was carried out in the presence of CO₂:N₂ gases with different flux ratios of 30:70, 40:60, 50:50, 60:40, and 70:30, respectively. Using CO₂, as the oxidizing gas, provides an easy control route for obtaining the VO₂ phase among various vanadium oxide phases. The layers were characterized by FESEM, XRD & Raman spectra, sheet resistance vs. temperature (20–120 °C), and UV–Vis–NIR spectra at 25 and 90 °C. The XRD and Raman spectra confirmed all prepared layers have a VO₂ polycrystalline structure in monoclinic phase. We found among the studied samples CN30-70 and CN50-50 having desirable optical characteristics of peak visible transmittance of about 55%, with low transition temperatures (T_cr) of ∼42 and 31 °C, and also relatively high amounts of ΔT_1700nm, ΔT_sol and T_lum,av are good candidates for thermochromic smart windows, both from optical properties and economical fabrication method points of view.     

Properties of nano-crystalline LiMn2O4 thin films deposited by pulsed laser deposition

Properties of LiMn₂O₄ thin films deposited on polished stainless steel substrates at 400 °C and 200 mTorr of oxygen by pulsed laser deposition have been characterized by electrochemical measurements and physical analyses. The film was mainly composed of nano-crystals less than 100 nm. A maximum specific capacity of 141.9 mAh/g cycled between 3.0 and 4.5 V with a current density of 20 μAh/cm² has been achieved. The film exhibited an excellent cycling stability up to 500 cycles. The low charge-transfer resistance at high potentials as revealed by AC impedance resulted in high charge/discharge potential and more capacity. The effect of overdischarge was limited and Jahn-Teller effect was overcome to a significant extent in this nano-crystalline film. Ex situ XRD, Raman and XPS provided supporting evidence in the changes in structure, reactivity and cycling stability of nano-crystalline LiMn₂O₄ film cathodes under different charge/discharge states and cycling tests. SEM images also revealed the stability of the surface topography after a long-term cycling test.     

Microwave dielectric properties of bismuth zinc niobate thin films deposited on alumina by pulsed laser deposition

Bi₂Zn_2/3Nb_4/3O₇ thin films were prepared on Al₂O₃ substrates by pulsed laser deposition. The phase compositions and microstructures were characterized by X-ray diffraction and atomic force microscopy. The as-deposited films were all amorphous in nature. All films were crystallized after the post annealing at the temperature range of 700–900 °C for 30 min in air. The texture characteristics change with annealing temperature. A split post dielectric resonator method was used to measure the microwave dielectric performance at the resonant frequencies of 10, 15 and 19 GHz. For the films annealed at 900 °C, the preferential orientation is similar to the monoclinic BZN bulk. The microwave dielectric constants at 10, 15 and 19 GHz are 69.4, 58.9 and 47.9, respectively, which are closer to these of the monoclinic BZN bulk.     

Effect of structural defects,surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique

In this article, the gas sensing properties of Al-doped ZnO thin films have been reported where the nanocrystalline ZnO based thin films were well deposited by a simple and inexpensive ‘chemical spray pyrolysis (CSP)’ technique. Films have been found to be uniform, pinhole free and well adherent to the substrate. The morphology, structures, and surface roughness of the deposited Al-doped ZnO thin films were studied by various types of characterization techniques. In addition, the authors have observed that the sensor response and selectivity towards CO gas is improved by the Al doping at a low operating temperature. XRD results showed that the obtained films are nanocrystalline in nature with hexagonal wurtzite phase. Further, the annealed films were used for detection of CO in the air and maximum response was observed at 175 °C. The improvement in sensor response of Al-doped ZnO thin films to CO gas attributed to the defect chemistry, crystallite size and surface roughness.     

Tunable multiferroic properties of Mn substituted BiFeO3 thin films

The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO₃ (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO₃ was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7×10⁻⁴ A/cm² which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (P_sat) and remanent polarization (2P_r) as high as 60.34 µC/cm² and 25.06 µC/cm² were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (n_r), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation ~31 emu/cc was observed for 3% Mn substituted BFO thin films.