Optical band gap shift in thin LiNbO3 films grown by radio-frequency magnetron sputtering

Thin polycrystalline LiNbO₃ films were deposited by the radio-frequency magnetron sputtering (RFMS) method and ion-beam sputtering (IBS) method under different conditions. Study of the adsorption band edge of fabricated films reveals direct and indirect optical transition. Depending on the particular technological sputtering RFMS regime, the direct energy gap varies from 3.8 to 4.4 eV. Band tails induced by the defects formation due to the reactive plasma effect on the film structure are responsible for indirect optical transitions in the studied films. Thermal annealing has a prominent effect on trap concentration and strain in as-grown films leading to rise in direct band energy up to 4.4 eV which is close to the value for bulk LiNbO₃.     

Growth evolution of CaB6 thin films deposited by DC magnetron sputtering

CaB₆ films were deposited by a DC magnetron sputtering method to explore the growth evolution systematically through changing sputtering time. The crystalline structure was characterized by XRD and GIXRD respectively, which showed that the films were anisotropic with nanocrystalline structure. The grain sizes increased with the deposition time, and a weak (100) texture appeared when the deposition time reached to 120 min. HRTEM was employed to demonstrate the crystalline structure. The surface morphology evolution of CaB₆ films was analyzed by AFM and FESEM. The results showed that the films were initially formed by fine columnar grains. With the deposition time extended, the films exhibited a dense columnar structure with faceted surfaces. The grain size, film thickness and crystallization degree all increased with the sputtering time.     

Engineering of morphological,optical, structural,photocatalytic and catalytic properties of nanostructured CuO thin films fabricated by reactive DC magnetron sputtering

Nanostructured thin films of CuO were deposited on silica glass substrates using reactive DC magnetron sputtering technique. Microstructural, morphological, optical, catalytic and photocatalytic properties of the prepared CuO thin films were examined using FESEM, AFM, Rutherford backscattering spectrometry, XRD, XPS, UV–Vis absorption and PL spectroscopy. FESEM showed nanostructures in the thin films, which were confirmed to be of monoclinic CuO by XRD analysis. Substrate temperature variation (40 °C, 100 °C and 300 °C) was found to significantly alter the optical, morphological, photocatalytic and structural properties of the CuO nanostructured thin film coatings. FESEM and AFM analyses showed decrease in size of nanostructures and surface roughness increase with increase in substrate temperature. Increase in UV–Vis absorbance and PL intensity of CuO thin films with decrease in crystallite size were noticed as the substrate temperature was increased. The prepared nanostructured CuO thin films exhibited highly enhanced photocatalytic activities and degraded dyes (MB and MO) in water in just 40 min under solar exposure and catalytic transformation of 4-nitrophenol (4-NP) took place in just 15 min. The developed CuO nanostructured thin film coatings are very promising for large scale, practical and advanced catalytic reduction of toxic 4-NP and photocatalytic applications in solar driven water purification.     

Electrochemical properties of boron-carbon-nitride films formed by magnetron sputtering

The electrochemical behavior of B_1.0C_2.4N_1.0 thin film was investigated in acidic, neutral and alkaline solutions. The anodic polarization curve of the film in 1 M NaOH showed the anodic dissolution of the film. The curve of the film in 1 M HCl showed no anodic dissolution. The cathodic polarization curve in 1 M NaCl showed shift to a negative potential side, but the anodic polarization curve was the same as that of Pt. The anodic dissolution in 1 M NaOH depended on potentials, that is, no anodic dissolution was recognized in a potential range of −0.2 to 0.1 V but the dissolution rate increased with increasing potential in a range of 0.1-0.6 V. The anodic current density of the film is directly proportional to the dissolution rate at potentials higher than 0.1 V. The dissolution rate of the film was increased with increasing solution pH.     

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

In this study, gallium oxide (Ga₂O₃) thin films were deposited on sapphire and n-Si substrates using Ga₂O₃ target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and deposition pressure. The effects of deposition pressure and growth power on crystalline structure, morphology, transmittance, refractive index and band gap energy were investigated in detail. X-ray diffraction results showed that amorphous phase was observed in all the as-deposited thin films except for the thin films grown at low growth pressure. All the films showed conversion to poly-crystal β-Ga₂O₃ phase after annealing process. When the deposition pressure increased from 7.5 mTorr to 12.20 mTorr, change in the 2D growth mode to 3D columnar growth mode was observed from the SEM images. Annealing clearly showed formation of larger grains for all the thin films. Lower transmission values were observed as the growth pressure increases. Annealing caused to obtain similar transmittance values for the thin films grown at different pressures. It was found that a red shift observed in the absorption edges and the energy band gap values decrease with increasing growth pressure. For as-deposited and annealing films, increasing sputtering power resulted in the increase refractive index.     

磁控溅射制备非晶态WO_3薄膜的光催化性能

采用射频反应磁控溅射工艺在玻璃基片上沉积了非晶态WO3薄膜。通过光催化降解亚甲基蓝和罗丹明B溶液实验,研究了所制WO3薄膜的光催化活性和使用寿命。X射线衍射(XRD)分析表明:所制备的WO3薄膜为非晶态。光催化实验表明:紫外光照3h后,薄膜对亚甲基蓝和罗丹明B溶液的最大降解率分别为83.26%和72.73%。重复使用3次后,薄膜对亚甲基蓝的降解率保持在75%以上,7次使用后薄膜基本丧失光催化活性。采用去离子水超声处理30min的方法可使已失活薄膜对亚甲基蓝的降解率从20%恢复至81%。     

Metallization of Al2O3 ceramic by magnetron sputtering Ti/Mo bilayer thin films for robust brazing to Kovar alloy

Ti/Mo bilayer thin films were deposited onto Al₂O₃ ceramic by magnetron sputtering with a subsequent high temperature sintering to ensure the robust brazing of Al₂O₃ ceramic to Kovar (Fe–Ni–Co) alloy. The interface reaction process between Ti film and Al₂O₃ ceramic as well as the joining strength between metallized Al₂O₃ ceramic and Kovar alloy were investigated systematically using X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, transmission electron microscopy, and electronic universal testing machine. The results show that the active Ti film can react with Al₂O₃ ceramic to form Ti₃Al and TiO during high-temperature sintering process, in which the amount, size and morphology of TiO crucially depend on the sintering temperature. As the sintering temperature reaches 1200 °C, a plenty of spherical TiO nanoparticles with ~ 150 nm in diameter and metallic nature can be created across the Ti/Al₂O₃ interfaces, which can effectively act as ‘bridges’ to join Ti film to Al₂O₃ substrate firmly. Hence, the optimal joining strength of 69.6±3.1 MPa between metallized Al₂O₃ ceramic and Kovar alloy can be obtained, much better than those counterparts metallized at 900 °C and 1050 °C almost without the existence of observable TiO.     

High thermoelectric performance achieved in Bi0.4Sb1.6Te3 films with high (00l) orientation via magnetron sputtering

To obtain p-type Bi–Sb–Te-based thin films with excellent thermoelectric performance, the Bi_0.4Sb_1.6Te₃ target is prepared by combining mechanical alloying with the spark plasma sintering technique. Afterward, Bi_0.4Sb_1.6Te₃ thin films are deposited via magnetron sputtering at variable working pressures. With an increasing working pressure, the frequency of collisions between the argon ions and sputtered atoms gradually increases, the preferred orientation of (00l) increases, and the sputtering rate decreases. The Seebeck coefficient increases from ∼140 μV/K to ∼220 μV/K as the carrier concentration decreases along with an increasing working pressure. Furthermore, the decrease in carrier concentration and acceleration of carrier mobility also affect the change in electrical conductivity. The maximum power factor of the p-type Bi_0.4Sb_1.6Te₃ thin film deposited at 4.0 Pa and at room temperature exceeds 20.0 μW/cm K² and is higher than that of most p-type Bi–Sb–Te-based films.     

The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering

Several ZnO:Al thin films have been successfully deposited on glass substrates at different substrate temperatures by RF (radio frequency) magnetron sputtering method. Effects of the substrate temperatures on the optical and electrical properties of these ZnO:Al thin films were investigated. The UV–VIS–NIR spectra of the ZnO:Al thin films revealed that the average optical transmittances in the visible range are very high, up to 88%. X-ray diffraction results showed that crystallization of these films was improved at higher substrate temperature. The band gaps of ZnO:Al thin films deposited at 25 ℃, 150 ℃, 200 ℃, and 250 ℃ are 3.59 eV, 3.55 eV, 3.53 eV, and 3.48 eV, respectively. The Hall-effect measurement demonstrated that the electrical resistivity of the films decreased with the increase of the substrate temperature and the electrical resistivity reached 1.990×10^?3 Ω cm at 250 ℃.     

Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering

Ta-doped ZnO films with different doping levels (0–5.02 at%) were prepared by radio frequency magnetron sputtering. The effects of the doping amount on the microstructure and the optical properties of the films were investigated. The grain size and surface roughness first significantly decrease and then slowly increase with the increase of Ta doping concentration. Both the grain size and the root mean square (RMS) roughness reach their minimum values at the doping content of 3.32 at%. X-ray Diffraction (XRD) patterns confirmed that the prepared Ta-doped ZnO films are polycrystalline with hexagonal wurtzite structure and a preferred orientation along the (002) plane. X-ray photoelectron spectroscopy (XPS) analysis reveals that Ta exists in the ZnO film in the Ta⁵⁺ and Ta⁴⁺ states. The average optical transmission values of the Ta-doped ZnO films are higher than those of the un-doped ZnO film in the visible region. The band gap energy extracted from the absorption edge of transmission spectra becomes large and the near band edge (NBE) emission energy obtained from PL spectra blueshifts to high energy when the Ta doping content grows from 0 at% to 5.02 at%, which can be explained by the Burstein–Moss shift.     

Enhanced NO2 sensing properties of Pt/WO3 films grown by glancing angle deposition

In this work, WO₃ films were synthesized by glancing angle deposition (GLAD) and conventional planar deposition respectively. By depositing Pt on WO₃ by GLAD, the NO₂ sensitivity of WO₃ films were significantly improved. The structural characteristics and NO₂ sensing properties of the films were investigated in order to establish the enhancement mechanism. The results show WO₃ films prepared by GLAD have porous nanorod-like structure, and isolated Pt clusters are distributed on WO₃. The nanostructured Pt/WO₃ films show high sensitivity to NO₂ at 150 °C, detecting as low as 80 ppb NO₂ with a response of 1.23. Meanwhile, the films also exhibit high NO₂ selectivity against NH₃, CO, acetone and ethanol. The excellent NO₂ sensing properties of the Pt/WO₃ films can be explained due to large specific surface area of nanorod-like WO₃, catalysis of Pt and Schottky barriers at interfaces. The reliable Pt/WO₃ nanostructure prepared by GLAD could be potentially applied in low-temperature, highly sensitive NO₂ sensor for micro-electro-mechanical system (MEMS).     

Effect of sputtering power on piezoresistivity and interfacial strength of SiCN thin films prepared by magnetic sputtering

SiCN ceramics show large potential in high temperature pressure sensors with excellent stability up to 1000 °C, as it is changeling for the most of the existing pressure sensors to work stably at a temperature above 600 °C. However, bulk SiCN ceramics are not compatible to microelectronic processing and exhibit slow response due to viscoelasticity, it is necessary to propose alternative method to prepare SiCN functional structures. In this work, SiCN piezoresistive thin films are prepared by magnetron sputtering, and the influence of sputtering power on their piezoresistive properties and interfacial strengths are studied. The gauge factors of SiCN films range from 2786 to 4714 at various sputtering powers, which are significantly higher than the range from 46 to 1105 for existing piezoresistive thin films. Upon an optimal sputtering power of 75 W for silicon nitride target, the obtained SiCN sample show the largest gauge factors in a large range from 0.5 to 3.4 MPa. Furthermore, the SiCN thin films present high critical loads up to 36.5 N in scratch tests and indicate strong interfacial adhesion with substrate. This work provides an important reference for developing SiCN-based MEMS pressure sensors.     

A study of the oxidation behavior of CrN and CrZrN ceramic thin films prepared in a magnetron sputtering system

CrN and CrZrN ceramic thin films were produced by a planar type reactive sputtering system on glass and stainless steel substrates. We investigated oxidation resistance of CrN and CrZrN ceramic thin films with different Zr contents. The structure of the films at different thermal-annealing temperatures was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanical properties of the films at different thermal-annealing temperatures were measured by nano-indentation. The results of this study showed that the addition of few amount of Zr (0.4 at%), can improve thermal stability of CrZrN ceramic thin film and increase the oxidation temperature of the film from 600 °C to 800 °C. The relatively good oxidation resistance (800 °C) and high hardness of the film with the lowest Zr content, indicates that this film is a good candidate for high temperature applications.     

Microstructure,mechanical and tribological properties of TaCN composite films by reactive magnetron sputtering

In this paper, a series of TaCN composite films with different carbon content were deposited by the magnetron sputtering system and the microstructure, mechanical and tribological properties were investigated. The results showed that the deposited TaCN films exhibited a three-phase of face-centered cubic (fcc) Ta(C,N), hexagonal closed-packed (hcp) Ta(C,N) and amorphous CNx. With the increase of carbon content, the hardness of the TaCN films first increased and then decreased, after reaching a maximum of 33.1 GPa; the adhesion strength increased gradually; the coefficient of friction decreased monotonically and the wear property initially improved and then weakened at room temperature. The coefficient of friction of the TaCN film at 28.21 at.% carbon decreased first, then increased and then decreased again and its high-temperature wear rate first decreased slightly and then increased, as the temperature increased from room temperature (RT) to 600 °C. The TaCN film at 28.21 at.% carbon exhibited excellent an elevated-temperature tribological properties.     

Magnetron sputtering deposition of Ag/Ag2O bilayer films for highly efficient color generation on fabrics

In this study, Ag/Ag₂O bilayer films were deposited on polyester fabrics to fabricate structural color by magnetron sputtering. The thickness of the Ag film was set, by precisely controlling the thickness of the Ag₂O layer, different structural colors were created on the fabric substrate, achieving a uniform and vibrant color spectrum. The prepared samples were characterized by XRD, FESEM and TEM. The chromogenic theory and mechanism were also investigated. The results showed that the efficient structural coloration process using magnetron sputtering deposition could be acquired. The developed textile coloration method may help advance new fabric dyeing technologies in the near future.     

Investigation into the effect of substrate material on microstructure and optical properties of thin films deposited via magnetron sputtering technique

This study aims at investigating the effect of the substrate material on growth mechanism and also microstructure of Ta₂O₅ thin films. For this purpose, atomic force microscopy, scanning electron microscopy, and interferometry analyses were implemented to reveal the influence of silicon wafer and amorphous BK7 glass substrates on the nucleation and growth mechanisms of Ta₂O₅ thin films deposited via the radio frequency magnetron sputtering technique. Results indicated that those films with finer morphologies had relatively higher nucleation densities. Compared with BK7 glass substrate, crystals formed on the silicon wafer were shown to be finer and had lower mean areas in more nucleation sites. Moreover, optical properties and morphological characteristics of the films on the silicon substrates had much more endurance after the annealing treatment. It was observed that shift in the transmission spectra of the deposited films after the treatment was insignificant, implying high packing density of the films. However, a 6-nm shift in the transmission spectra indicated low density and high porosity of the films. Finally, atomic force microscopy analysis along with the light scattering measurements confirmed the formation of a low-roughness film on the silicon wafer substrates.     

Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se₂ solar cells.     

Effect of deposition parameters on properties of TiO2 films deposited by reactive magnetron sputtering

TiO₂ films were grown onto unheated 5083 aluminum alloy substrates by reactive magnetron sputtering from a pure Ti target in Ar-O₂ gas mixture in different power, bias voltage, Ar/O₂ ratio and deposition time at room temperature. The effects of different deposition parameters on the structure and properties of TiO₂ films were investigated systematically by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation tests, electrochemical tests and antibacterial tests. The results show that power and bias voltage are two main factors to affect the structure and properties of TiO₂ films during the sputtering process. XRD results show that anatase phase is the main phase of the film, and the enhanced content of anatase phase with the increase of sputtering power and bias voltage. Nanoindentation tests exhibit that higher H/E (Hardness/Modulus) ratio can be achieved by depositing TiO₂ film. And the corrosion resistance and antifouling property are all improved after depositing TiO₂ film. 2# sample shows the optimal corrosion resistance, E_corr and I_corr are −0.27388 V and 3.7232 μA/cm², respectively. 1# sample exhibits excellent antibacterial property, the d ensity of bacteria is only 217 cell / mm², which is 484% higher than that of uncoated matrix.     

Mechanical properties and thermal stability of tungsten boride films deposited by radio frequency magnetron sputtering

Tungsten and boron compounds belong to the group of superhard materials since their hardness could exceed 40?GPa. In this study, the properties of the tungsten boride WB_x coatings deposited by radio frequency magnetron sputtering were investigated. The sputtering was performed from specially prepared targets that were composed of boron and tungsten mixed in a molar ratio of 2.5 and sintered in Spark Plasma Sintering (SPS) process. WB films were deposited on silicon (100) and stainless steel 304 substrates at temperatures of 23 ÷ 770?°C. Microstructure, chemical and phase composition were investigated by using Scanning Electron Microscope (SEM), X-Ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD), respectively. The mechanical properties like Vickers hardness and Young's modulus were obtained by using nanoindentation test at a load of 5 ÷ 100 mN. The friction coefficient and wear resistance of αWB coatings were investigated in scratch test and reciprocal sliding wear instrumentation. Moreover, in order to investigate thermal properties, the αWB films were annealed at 1000?°C in argon/air for 1?h and at 250?°C for 2?h in air atmosphere. Results of our research confirm that αWB coatings can be considered as an alternative to superhard materials in the production of wear resistant, long-lasting tools.