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1.
对Pt/Si快速热退火固相反庆形成超薄PtSi薄膜进行研究。溅射Pt薄膜的厚度在5--20mm之间,用AES,XRD,RBS,SEM等分析测试手段对固相反应PtSi薄膜的结构特性进行观测,并对PtSi/n-Si肖特基结电学性能进行了测试。实验结果表明,550--600快速退火有利于Pt/Si反应形成性能优良的PtSi/Si肖特基热垒接触。 相似文献
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本文首次研究金属Co与分子束外延Si1-xGex单晶薄膜快速热退火(RTA)固相反应,并对比了CO、Ti与SiGe固相反应时不同的反应规律实验采用RBS、AES、XRD、SEM等分析和测试手段对样品的组分和结构等薄膜特性进行检测.实验发现,Co/Si0.8Ge0,2在650℃热退火后形成组分为Co(Si0,9Ge0.1)的立方晶系结构,薄膜具有强烈择优取向;900℃处理温度,有CoSi2形成,同时Ge明显地向表面分凝.TiN/Ti/Si0.8Ge0.2固相反应时,850℃处理可以形成Ti(Si1-yGey 相似文献
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自对准外延CoSi_2源漏接触CMOS器件技术 总被引:1,自引:0,他引:1
CO/Ti/Si或TiN/Co/Ti/Si多层薄膜结构通过多步退火技术在Si单晶衬底上外延生长CoSi2薄膜,AES、RBS测试显示CoSi2薄膜具有良好均匀性和单晶性.这种硅化物新技术已用于CMOS器件工艺.采用等离子体增强化学汽相淀积(PECVD)技术淀积氮氧化硅薄膜,并用反应离子刻蚀(RIE)技术形成多晶硅栅边墙.固相外延CoSi2薄膜技术和边墙工艺相结合,经过选择腐蚀,可以分别在源漏区和栅区形成单晶CoSi2和多晶CoSi2薄膜,构成新型自对准硅化物(SALICIDE)器件结构.在N阱CMOS工艺 相似文献
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用于自对准提升硅化物结构的Co/Si/Ti/Si及Co/Si/…Ti/Si多层薄膜固相反应研究 总被引:1,自引:1,他引:0
为了减小硅化物形成过程中消耗的衬底硅,提出添加非晶Si的新方法,并探索了Co/Si/Ti/Si及Co/Si(×7)/Ti/Si多层薄膜固相反应的两种途径.实验采用四探针、XRD、RBS等多种方法对固相反应过程进行了研究,对反应形成的CoSi2薄膜进行了测试分析,并探索了在SiO2/Si及图形片上的选择腐蚀工艺.结果表明,当选择合适的Co∶Si原子比,恰当的两步退火方式及选择腐蚀溶液,两种方法都可以形成自对准硅化物结构.研究了这两种固相反应过程,发现在一定的Co∶Si原子比范围内,这两种方法制备的CoSi2 相似文献
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PtSi/Si整流接触的研究 总被引:1,自引:0,他引:1
本文对是PtSi/Si整流特性的接触进行了详细研究,并试制成功PtSi/p-Si和PtSi/n-Si两种用途不同的肖特基势垒二极管。 相似文献
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在Si(100)衬底上用离子束溅射方法淀积Ni,Co,Ti薄膜,形成Co/Ni/Si,Ni/Co/Si和Co/Ni/Si等结构,通过氮气中快速热退火反应生成三元硅化物(CoxNil-x)Si2。用AES,XRD,RBS沟道谱,SEM及四探针等方法对(CoxNil-x)Si2薄膜的物理特性和电学特性进行了测试,在Si衬底上Co,Ni多层膜经快速热退火可形成高电导的(CoxNil-x)Si2薄膜,其电阻率在15~20μΩ·cm之间。Co/Ni/Ti/Si(100)多层结构固相反应可以得到外延(CoxNil-x)Si2薄膜。(CoxNil-x)Si2的晶格为CaF2立方结构,晶格常数介于CoSi2和NiSi2之间。通过热处理和选择腐蚀等工艺,可在有CMOS图形的衬底上形成自对准的三元硅化物源漏接触和栅极互连图形。 相似文献
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本文研究不同金属薄膜结构形成的超薄CoSi2膜的高温稳定性.采用离子束溅射和反应磁控溅射技术制备Co/Si、TiN/Co/Si、Co/Ti/Si、TiN/Co/Ti/Si不同结构,在高纯氮气下进行快速热退火(RTA),形成CoSi2薄膜.应用四探针薄层电阻测试、扫描电子显微镜(SEM)、透射电子显微镜(TEM)进行测试.实验结果表明:TiN覆盖层和Co/Ti/Si三元固相反应都是有利于形成具有良好高温稳定特性的CoSi2薄膜的有效方法,有望应用于深亚微米接触和互连技术中. 相似文献
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在Si(100)衬底上用离子束溅射方法淀积Ni,Co,Ti薄膜,形成Co/Ni/Si,Ni/Co/Si和Co/Ni/Si等结构,通过氮气中快速热退火反应生成三元硅化物(CoxNi1-x)Si2。用AES,XRD,RBS沟道谱,SEM及四探针等方法(CoxNi1-x)Si2薄膜的物理特性和电学特性进行了测试,在Si衬底上Co,Ni多层膜经快速热退火可形成高电导的(CoxNi1-x)Si2薄膜,其电阻 相似文献
9.
Pt/Si界面反应与肖特基势垒形成的研究 总被引:2,自引:0,他引:2
利用俄歇电子能谱,二次离子质谱,深能级瞬态谱(DLTS)和C-V法等测量方法,详细研究了Pt/Si和Pt硅化物/Si界面的反应性质,原子结构及杂质/缺陷的分布,讨论了它们对肖特基势垒的形成,势垒特发生和势垒高度的影响。 相似文献
10.
利用俄歇电子能谱,深能化瞬态谱,及I-V和C-V两种电学测量方法对PtSi-N-Si和PtSi/P-Si两种肖特基势垒的形成条件与势垒度之间的关系进行了详细研究。从理论上分析了在退火过程中引入的影响肖特基势垒特性的各种因素,同时指出了获得理想肖特基势垒的退火条件。 相似文献
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用弹道电子发射显微术研究超薄金属硅化物/硅肖特基接触 总被引:1,自引:1,他引:0
采用弹道电子发射显微术 ( BEEM)技术对超薄 Pt Si/Si、Co Si2 /Si肖特基接触特性进行了研究 ,并与电流 -电压 ( I- V)及电容 -电压 ( C- V)测试结果进行了对比 .研究了 Ar离子轰击对超薄Pt Si/n- Si肖特基接触特性的影响 .BEEM、I- V/C- V技术对多种样品的研究结果表明 ,I- V/C- V测试会由于超薄硅化物层串联电阻的影响而使测试结果产生严重误差 ;BEEM测试则不受影响 .随着离子轰击能量增大 ,肖特基势垒高度降低 ,且其不均匀性也越大 .用 BEEM和变温 I- V对超薄 Co Si2 /n- Si肖特基二极管的研究结果表明 ,变温 I- V测试可在一定程度上获得肖特基势垒 相似文献
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利用磁控溅射在石墨衬底上制备了非晶硅薄膜,并使用快速热退火对薄膜进行了晶化处理。XRD分析表明,直接溅射沉积在石墨衬底上的硅薄膜经过快速热退火后具有高度的(220)择优取向。通过在硅薄膜和石墨衬底界面处引入一定厚度的ZnO中间层,晶化后的多晶硅薄膜择优取向实现了从(220)向(400)的转变,从而非常有利于将成熟的制绒工艺应用于该材料体系的电池制备过程中。对于择优取向的转变提出了解释,认为Si(100)面和ZnO(001)面晶格匹配是主要原因。喇曼分析表明ZnO中间层的引入提高了多晶硅薄膜的晶体质量。 相似文献
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采用改进的溶胶-凝胶(Sol-Gel)方法在Pt/Ti/SiO2/Si基片上制备锆钛酸铅(PZT)纳米晶薄膜,研究了不同的热处理方式对PZT薄膜的晶粒结构、尺寸及电学性能的影响。X-射线衍射(XRD)分析表明:传统的热处理方式更有利于得到具有一定择优取向性的PZT薄膜。原子力显微镜(AFM)显示:快速热处理方式使PZT薄膜的晶粒具有自形晶结构,晶粒的排布更为有序,从而改善了薄膜的致密性。阻抗分析仪的测试结果表明:经快速热处理的薄膜,漏电流大约比传统热处理处理的薄膜的漏电流降低了20倍左右。 相似文献
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Momose H.S. Morimoto T. Ozawa Y. Yamabe K. Iwai H. 《Electron Devices, IEEE Transactions on》1995,42(4):704-712
Thin LPCVD stacked nitride-oxide gate MISFET's offer the potential for high current drive as a consequence of the high permittivity of the nitride. However, thin nitride-oxide films have yet to be used in actual MISFET's for LSI products because thin nitride films have poor masking ability during re-oxidation and low reliability under hot-carrier stress. We have investigated improvements to thin LPCVD stacked nitride-oxide films as regards masking ability during re-oxidation and hot-carrier reliability. The method proposed to improve film quality is densification through high-temperature rapid thermal processes and its effectiveness has been tested. Simple rapid thermal annealing (RTA) did not improve the film quality at all. On the other hand, rapid thermal nitridation (RTN) on the deposited nitride film improved it considerably. The reason for the improvement by RTN was investigated 相似文献
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JIN Rui-min LU Jing-xiao FENG Tuan-hui YANG Shi-e ZHANG Li-wei 《半导体光子学与技术》2006,12(1):15-17,29
Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X- ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850 ℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30 nm is obtained by both techniques. 相似文献
19.
The formation of TaSi2 in the Si-PtSi-Ta and Si-Ta systems has been studied using Auger spectroscopy, x-ray diffraction and electron diffraction
techniques. The reaction of tantalum with PtSi was observed by Sinha, et al.l to take place with high temperature (800°-900°c) annealing of thin film systems consisting of Si-PtSi-Ta-W1. In the present investigation, it is shown that tantalum reacts with PtSi at approximately 600°C to form a mixture of Ta5Si3 and TaSi2 and predominantly TaSi2 at 785°C. Platinum is displaced at the refractory metal (Ta)-PtSi interface, whereupon the more stable refractory metal-silicide
is formed. The displaced platinum reacts further with the excess silicon which diffuses from the Si-PtSi interface. The Si-PtSi-Ta
reaction is similar to the Si-PtSi-W reaction. However, unlike tungsten which migrates very little in the Si-PtSi-W system,
tantalum appears to interdiffuse with the PtSi at temperatures as low as 600°C. In the case of the Si-Ta couple, TaSi2 forms at approximately 750°C as determined by transmission electron microscopy (TEM) measurements. The kinetics of TaSi2 formation at the Si-Ta interface are compared to that which takes place at the PtSi-Ta interface to determine the influence
of the PtSi layer. Silicide formation was not observed in SiO2-Ta specimens. after anneals up to 800°c. At 750°C Ta2O5 formed as observed by electron diffraction. 相似文献
20.
Masafumi Kimata Masahiko Denda Shyuhei Iwade Naoki Yutani Natsuro Tsubouchi 《Journal of Infrared, Millimeter and Terahertz Waves》1985,6(10):1031-1041
The photoresponse of a front-illuminated PtSi Schottky-barrier detector is measured in the wavelength range between 0.4 and 5.2μm. In the wavelength range longer than 1.1μm, the detection mechanism is the internal photoemission. On the other hand, the intrinsic mechanism becomes dominant in the wavelength range shorter than 1.1μm. The measured data are in good agreement with values calculated from these two detection mechanisms. The photoresponse depends on the PtSi thickness in both wavelength ranges. For getting a high responsivity, it is important to make a thin uniform metal film. The visible and the thermal image with a PtSi Schottky-barrier wide spectral band imager are also demonstrated. 相似文献