Two-segment spectrally inhomogeneous traveling wave semiconductoroptical amplifiers applied to spectral equalization

Spectral equalization devices for an optical analog-to-digital (A-to-D) converting system have been theoretically analyzed and fabricated. Selective area growth was used to define a multiple-section active region. Two-segment semiconductor optical amplifier with current adjustable gain spectrum is demonstrated     

InGaAs/InGaAsP MQW optical amplifier integrated withgrating-assisted vertical-coupler noise filter

A photonic integrated circuit with an InGaAs/InGaAsP multiple-quantum-well (MQW) traveling-wave optical amplifier and a grating-assisted vertical-coupler filter as a noise filter have been demonstrated. A fiber-to-amplifier/filter gain of ~0.5 dB and a 3-dB filter bandwidth (FWHM) of ~70 Å at 1.56 μm filter center wavelength have been achieved. This photonic circuit is potentially suitable as a building-block for preamplifier lightwave receivers or high-gain, high-power optical amplifiers which are essential for optical communication systems and lightwave networks     

Monolithic integration of an amplifier and a phase modulatorfabricated in a GRINSCH-SQW structure by placing the junction below thequantum well

We present results of a novel semiconductor optical amplifier device in which an amplifier and a phase modulator are integrated into a fundamental transverse-mode ridge waveguide. By placing the p-n junction below the quantum well (QW) during epitaxial growth and utilizing the effect of the electric field on the depletion width, the phase of the light from an integrated optical amplifier-modulator is varied. For a modulation reverse bias voltage range of 0.4 V, we have demonstrated a 360°/mm phase shift with less than 1.2 dB of amplitude modulation     

单片集成倾斜SOA的宽可调谐取样光栅分布布拉格反射激光器

高功率和宽调谐范围的单片集成倾斜SOA的宽可调谐取样光栅分布布拉格反射激光器被成功制备。倾斜的SOA结构和端面增透膜有效的降低了端面的反射率。器件调谐范围大于38nm,波长覆盖较好,调谐范围内波长输出功率均大于9mW。     

Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier

High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier. Tilted amplifier and anti-reflection facet coating are used to suppress reflection. We have demonstrated sampled grating DBR laser with a tuning range over 38 nm, good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.     

Influence of facet reflection on the performance of a DFB laserintegrated with an optical amplifier/modulator

The influence of output facet reflection on characteristics of a monolithically integrated optical device consisting of a distributed feedback (DFB) laser and an optical amplifier/modulator is analyzed. Basic equations used for the analysis are the characteristic equation for a DFB laser and the rate equations. As a result, it is known that static and dynamic properties of such optical integrated devices are seriously degraded by the optical feedback from the output facet. It is concluded that the power reflectivity of the output facet should be reduced to at least less than 0.1% for the integrated region to work as an optical amplifier and less than 0.01% as an intensity modulator     

Noise in an AlGaAs Semiconductor Laser Amplifier

The noise characteristics in a Fabry-Perot (FP) cavity type semiconductor laser amplifier, biased at just below its oscillation thresh-old current, have been studied theoretically and experimentally. Quantum mechanical multimode rate equations containing a Langevin shot noise source and an input signal term were numerically solved for an exponential band-tail model with no k-selection rule. Noise power calculated using this rate equation was compared with a simpler photon statistic master equation method. The experimental results on noise power for an AlGaAs laser amplifier are in reasonable agreement with the two different theoretical predictions. Dominant noise powers in a semiconductor laser amplifier are beat noise powers between signal and spontaneous emission, and between spontaneous emission components. Noise characteristics in a Fabry-Perot cavity type laser amplifier can be improved both by the reduction of the facet mirror reflectivities and by use of an asymmetric cavity configuration with low-input and high-output mirror reflectivities. Two beat noise powers are expressed in simple analytic form by introducing an equivalent noise bandwidth and an excess noise coefficient as figures of merit in an optical amplifier.     

Suppression of beat noise from optical amplifiers using coherentreceivers

Coherent optical fiber communications have been studied intensively because of their high receiver sensitivity and high-frequency selectivity. With the advent of an erbium-doped fiber amplifier (EDFA), however, the first advantage seems to have become less attractive. Nevertheless, the combination of the EDFA and coherent techniques offers a number of attractive features. In this paper, we show both theoretically and experimentally that the excess beat noises (common-mode and image-band beat noises) from optical amplifiers can be suppressed by using coherent receivers such as a balanced receiver and a double-stage phase-diversity (DSPD) receiver. The noise figure (NF) of the excess-noise-suppressed coherent receivers with an optical preamplifier is shown to be 0 dB. Bit-error-rate (BER) formulas are also discussed     

Noise in an AlGaAs semiconductor laser amplifier

The noise characteristics in a Fabry-Perot (FP) cavity type semiconductor laser amplifier, biased at just below its oscillation threshold current, have been studied theoretically and experimentally. Quantum mechanical multimode rate equations containing a Langevin shot noise source and an input signal term were numerically solved for an exponential band-tail model with nok-selection rule. Noise power calculated using this rate equation was compared with a simpler photon statistic master equation method. The experimental results on noise power for an AlGaAs laser amplifier are in reasonable agreement with the two different theoretical predictions. Dominant noise powers in a semiconductor laser amplifier are beat noise powers between signal and spontaneous emission, and between spontaneous emission components. Noise characteristics in a Fabry-Perot cavity type laser amplifier can be improved both by the reduction of the facet mirror reflectivities and by use of an asymmetric cavity configuration with low-input and high-output mirror reflectivities. Two beat noise powers are expressed in simple analytic form by introducing an equivalent noise bandwidth and an excess noise coefficient as figures of merit in an optical amplifier.     

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

An electroabsorption modulator and an optical amplifier have been monolithically integrated by using nonplanar MOVPE. A bandgap shift of more than 60nm was obtained with atmospheric pressure MOVPE of GaInAs/GaInAsP strained QWs on 10 mu m wide ridges. A chip gain of 9dB and an excitation ratio of 17dB were obtained for the monolithic electroabsorption modulator/amplifier. The integration of an optical amplifier enables the use of a wavelength close to the bandgap of the modulator, resulting in low voltage and low chirp operation.<>     

Operation of integrated InGaAsP-InP optical amplifier-monitoringdetector with feedback control circuit

Monolithic integration of a monitoring detector with an optical amplifier simplifies the use of an amplifier in lightwave systems. The structure and performance are described of a monolithically integrated semiconductor optical amplifier with low-loss Y-branching waveguides and a monitoring p-i-n detector. The photocurrent of the integrated detector can be used as a single control parameter for amplifier output leveling, gain optimization, and in situ monitoring of facet antireflective coatings     

Modeling and performance analysis of WDM transmission linksemploying semiconductor optical amplifiers

We theoretically explored the system limits of various single- and multichannel transmission links employing semiconductor optical amplifiers (SOAs). For this purpose, we developed an accurate model to describe the amplifier dynamics in the moderate and low saturation regimes. Our simulation results revealed the delicate balance among the level of saturation, the signal-to-noise ratio, and the amount of gain per amplifier required for optimum system performance. The modeling results have been confirmed by recent experimental work in this area     

Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays

Monolithically integrated 4*4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.<>     

Monolithic Semiconductor Waveguide Device Concept for Picosecond Pulse Amplification, Isolation, and Spectral Shaping

In this paper, a waveguide device concept, named IRIS, is presented. The device consists of a monolithic array of concatenated semiconductor optical amplifiers and saturable absorbers. We have theoretically investigated picosecond pulse transmission through these devices. The parameters used in the simulation are representative for InP-InGaAsP bulk gain material, operating in the 1550-nm region. Operated as an optical amplifier for picosecond pulses, the simulation results show increased pulse peak amplification and decreased temporal broadening of the pulses for the IRIS devices as compared to a semiconductor optical amplifier of equivalent length. Used as a nonlinear element to increase the optical bandwidth of a picosecond pulse, the spectra obtained with IRIS devices show an increased broadening and smoothness as compared to a semiconductor optical amplifier. Finally the feasibility for using the IRIS device as an optical isolator is shown. It is operated in a regime where the device is transparent for a picosecond pulse train, while it is absorbent for lower power reflections.     

级联PSA非零色散位移光纤通信系统传输性能的研究

本文通过计算机系统仿真研究了以相敏光放大器（PSA）作为中继光放大器的非零色散位移光纤通信系统的传输性能,分析了PSA系统的码间干扰（ISI）限制距离与信号速率、光纤色散、放大器间距和放大器平均输出信号功率的关系,以及PSA中泵浦光和信号光之间的相位漂移和信号脉冲波形对级联PSA光传输系统传输性能的影响。     

级联EDFA系统中偏振相关增益特性的研究

掺铒光纤放大器的偏振相关增益是导致放大器增益不平坦的一个重要原因,进而影响长距离光纤通信系统、长距离光纤传感系统的信号质量.本文从理论模拟角度研究了级联掺铒光纤放大器的偏振相关增益对光纤中所传输通信光信号的影响.重点研究了掺铒光纤非均匀展宽情况下,偏振相关增益受传输信号功率、信道个数、级联EDFA个数、等因素的影响,并给出了定性结论.     

Gain Dependent Optimum Pulse Generation Rates of a Hybrid-Type Actively and Passively Mode-Locked Fiber Laser

We have experimentally observed and theoretically analyzed the gain dependent optimum repetition rates of a hybrid-type active and passive mode locked laser pulses in an erbium-doped fiber laser of the figure-of-eight geometry by utilizing a nonlinear amplifier loop mirror (NALM) as a saturable absorber and a directional-coupler type electro-optic modulator as an active mode locker. Transform-limited mode-locked pulses of about 10 ps width were obtained at repetition rates which correspond to harmonics of the cavity fundamental frequency and depend on the optical amplifier gain in the NALM.     

Long-haul coherent optical fiber communication systems usingoptical amplifiers

Studies on long-haul coherent optical fiber communication systems with in-line optical amplifier repeaters are made theoretically and experimentally. By theoretical calculation it was found that coherent systems can achieve wider dynamic range for an amplifier input power as compared with the intensity-modulation direct-detection (IM-DD) systems. The feasibility of such systems using traveling-wave semiconductor laser amplifiers (TWSLAs) and erbium-doped fiber amplifiers (EDFAs) was investigated, and 546 km, 140 Mb/s CPFSK transmission using TWSLAs and 1028-km, 560-Mb/s CPFSK transmission using EDFAs were successfully demonstrated     

40-Gb/s tandem electroabsorption modulator

In this letter, we have developed a tandem electroabsorption modulator with an integrated semiconductor optical amplifier that is capable of both nonreturn-to-zero and return-to-zero (RZ) data transmission at 40 Gb/s. The tandem modulator consists of a broad-band data encoder and a narrow-band pulse carver. The pulse carver is able to produce 5-ps pulses with more than 20 dB of extinction. The on-chip semiconductor optical amplifier provides up to 8.5 dB of fiber-to-fiber gain and enables the modulator to be operated with zero insertion loss. Devices have been realized with greater than 40-GHz bandwidth, and 13-dB dynamic extinction for a 2.5-V swing. For optimized designs bandwidths of nearly 60 GHz: have been realized. Using these devices penalty free RZ data transmission over a 100-kin dispersion compensated fiber link has been demonstrated with a received power sensitivity of -29 dBm     

InGaAsP/InP超辐射集成光源

为提高半导体超辐射器件的输出功率 ,采用直接耦合的方法 ,将超辐射发光管 (SL D)与半导体光放大器 (SOA)单片集成 ,制得了 1.3μm超辐射集成光源 ,其脉冲输出功率为 50 m W,光谱宽度 (FWHM)为 2 8.9nm。通过对放大器增益特性的讨论 ,得出了既能稳定器件性能 ,又可以提高输出功率的有效工作方案。