Fabrication of ridge waveguides in LiNbO3 thin film crystal by proton-exchange accelerated etching

A simple fabrication method of adhered LiNbO₃ ridge waveguides by accelerated etching of the proton-exchanged region is proposed and demonstrated. The waveguides were fabricated and tested at 1.55 mum wavelength. Strongly confined guided modes were obtained. The waveguides are suitable for efficient nonlinear-optic wavelength conversion devices.     

Fiber-compatible K+-Na+ ion-exchanged channelwaveguides: fabrication and characterization

A systematic study of waveguides fabricated by K⁺-Na ⁺ exchange in soda-lime silicate and BK7 glasses is presented. The measured K⁺ concentration profile, the refractive index profile, and the diffusion profile obtained by solving the one-dimensional diffusion equation are correlated to explain the differences in the index profiles in the two glasses. The mobility of the potassium ions was measured by fabricating waveguides using electromigration. Surface waveguides formed by diffusion from a molten KNO₃ salt bath were buried by applying an electric field. Single-mode channel waveguides for operation at a wavelength of 1.3 μm that exhibit excellent mode matching with conventional optical fibers, achieving a fiber-waveguide insertion loss of less than 1 dB for a 20-mm-long waveguide, have been obtained     

铜离子交换单步掩埋BK7玻璃波导的制备与表征

利用Cu离子交换技术制备了BK7玻璃平面光波导,在6328nm波长下,用棱镜耦合技术测量出所制备波导的有效折射率,利用反WKB方法计算并确定了平面光波导的折射率分布,通过对折射率分布进行函数拟合,发现离子交换后的样品折射率分布近似符合改进后的高斯分布,样品的折射率分布似乎是一个掩埋波导的折射率分布,求出所制备玻璃平面光波导在570℃的扩散系数De≈12133×10-14m2s。同时,对所制备波导进行了电子显微镜(EMS)和次级离子质谱(SIMS)测试,得到了铜离子在玻璃表面的浓度分布,从而证明了实验所得到的BK7玻璃平面光波导是掩埋波导。这种掩埋平面波导是由单步Cu离子交换技术得到的。     

Silicon raised strip waveguides based on silicon and silicon dioxide thermal bonding

Si raised strip waveguides on SiO/sub 2/ have been proposed and fabricated, which are based on silicon-on-insulator (SOI) material. In the waveguides, the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. An anisotropic etchant is used to produce the trapezoidal Si raised strip waveguides by etching the Si film down to the SiO/sub 2/ etch-stop buried layer. The transmission losses of the Si waveguides are measured to be less than 0.2 dB/cm at the 1.3 /spl mu/m wavelength for the lowest mode TE-like mode.     

Effective refractive index and first-order-mode cutoff conditions in InGaAsP/InP DH laser structures (λ = 1.2-1.6 µm)

The virtual wavelength-invariance of the ratio between bandgap wavelength and the square root of the dielectric-constant step in InGaAsP/InP DH structures [i.e., (lambda_{g}/sqrt{Deltaepsilon}) = 0.95 pm 0.03for 1.2 μm< lambda_{g} < 1.6 mum] and an analytical approximation for the transverse propagation constantb, allow the derivation of an accurate, closed-form expression for the effective refractive index Neffof InGaAsP/InP planar DH lasers emitting in the1.2-1.6 mum range. Then, Neffis only a function of two readily measurable parameters: emission wavelength and active-layer thickness. Furthermore, the mode cutoff conditions for various lateral waveguides: buried-rectangular, buried-crescent, and ridge-guide, become wavelength-independent analytical expressions. First-order-mode cutoff conditions for these lateral waveguides are derived, plotted and compared to experimental data from mode-stabilized 1.3 and 1.55 μm DH lasers.     

Sol-gel glass waveguide and grating on silicon

This paper reports on the fabrication and characterization of hybrid organic-inorganic glass sol-gel slab and channel waveguides by ultraviolet light imprinting in thin films deposited by a one-step dip-coating process. The adjustment of chemical composition of the materials provides precise selection of refractive index from 1.48 to 1.52 at the wavelength of 632.8 mn. The refractive index of the waveguides at 1.55 μm is similar to that of optical fiber, thus reducing the reflection loss between the two to less than 0.01 dB. The effect of ultraviolet light exposure and heat treatment on waveguide refractive index is studied. Fabrication parameters to produce ridge waveguides are optimized to achieve very smooth side walls. Propagation losses in these waveguides are ~0.1 dB/cm. Single mode buried waveguides, at 1.55 μm wavelength, with circular mode profile are demonstrated     

GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide

A novel GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BJB-DBR integrated laser for short) is proposed and demonstrated. In this structure, it is found theoretically that an efficient coupling of 98% between the active and butt-jointed external waveguides is available by matching the propagation constants and the field profiles of both waveguides, which gives relatively larger fabrication tolerance. Prototype BJB-DBR integrated lasers with emitting wavelength of 1.55 ?m were fabricated, and single-longitudinal-mode operation was obtained at room temperature.     

Optical study of porous silicon buried waveguides fabricated from p-type silicon

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p⁺.     

1.5-/spl mu/m InGaAsP-InP slab-coupled optical waveguide lasers

We report the demonstration of high-power semiconductor slab-coupled optical waveguide lasers (SCOWLs) operating at a wavelength of 1.5 /spl mu/m. The lasers operate with large (4/spl times/8 /spl mu/m diameter) fundamental mode and produce output power in excess of 800 mW. These structures have very low loss (/spl sim/0.5 cm/sup -1/) enabling centimeter-long devices for efficient heat removal. The large fundamental mode allows 55% butt-coupling efficiency to standard optical fiber (SMF-28). Comparisons are made between SCOWL structures having nominal 4- and 5-/spl mu/m-thick waveguides.     

Fabrication and Characterization of Benzocyclobutene Optical Waveguides by UV Pulsed-Laser Illumination

Buried-type benzocyclobutene (BCB) optical waveguides fabricated by UV pulsed-laser illumination are proposed and comprehensively characterized in this paper. The fabrication process is greatly simplified as compared to conventional dry-etched ridge-type BCB waveguides. The measured propagation loss at 1548 nm is as low as 0.6 dB/cm due to the buried waveguide structure. And the produced refractive index change is dependent upon the number of laser shots such that single-mode waveguides with different mode sizes can be tailored for efficient coupling. Furthermore, rigorous analyses of surface damage threshold, rms roughness, and chemical characteristics under different illumination conditions are presented to illustrate the design considerations and the chemical mechanism of the UV-induced BCB waveguides     

Cutoff wavelength of periodically segmented waveguides in Ti:LiNbO3

The cutoff wavelength for Ti:LiNbO₃ periodic segmented waveguides (PSWs) with different duty-cycles and of continuous waveguides has been measured for both polarizations, PSWs are described by an equivalent continuous waveguide and, using this model, a universal relationship between the cutoff wavelength of PSWs with different duty-cycles is proposed and verified experimentally     

Evaluation of LiNbO/sub 3/ intensity modulator using electrodes buried in buffer layer

For highly efficient operation, a new type LiNbO/sub 3/ Mach-Zehnder intensity modulator using electrodes buried in the buffer layer was designed and fabricated. The modulator was designed considering velocity matching between light and microwave, microwave propagation loss and characteristic impedance Z/sub 0/ of 50 Omega . This modulator for a 1.5 mu m wavelength operates with a V/sub pi / of 3.2 V, a 3 dB down bandwidth of 14 GHz and a temperature dependence of 17 mV/ degrees C.<>     

Wavelength dispersion of effective refractive indices of Rb:KTiOPO/sub 4/ optical waveguides

Multimode planar optical waveguides in z-cut KTiOPO/sub 4/ (KTP) substrates have been fabricated using Rb/sup +/:K/sup +/ ion-exchange process. Variations in the refractive index profile and the surface index change with wavelength in these waveguides are approximated by a simple relation. The dispersion characteristics of the effective refractive indices for different guided modes before and after annealing are calculated based on this approximation and the WKB method. Furthermore, the wavelength dispersion can also be expressed using a sellmeier-like equation, and there is an excellent agreement between the calculated values and the measured data.     

Efficient light transmission through InP-based photonic crystalwaveguides

Very efficient light transmission over a length of several millimetres through linear photonic crystal slab waveguides, patterned into an InGaAlAs waveguiding layer on InP substrate, is demonstrated. Quantitative evaluation of the light propagation in these waveguides, using the Fabry-Perot resonance method, yields a minimum loss of 1.6 dB/mm, for a waveguide with seven missing rows at 1550 nm wavelength     

Demonstration of 10-Gb/s $C+L$-Band InP-Based Mach–Zehnder Modulator

We present a 10-Gb/s InP-based Mach-Zehnder modulator with ruthenium (Ru)-doped buried heterostructure waveguides. C- and L -band operation is demonstrated, including transmission over 100 km of single-mode fiber for 1528-1600 nm.     

Passive optical GaInAsP/InP waveguides

We have fabricated GaInAsP/InP rib waveguides with lengths of up to 7 mm and widths between 2.5 and 10 ?m. The waveguides show low losses of ? = 1.38?1.84 cm?1 at a wavelength of 1.3 ?m.     

Super-high-/spl Delta/ athermal arrayed waveguide grating with resin-filled trenches in slab region

A small and low-loss athermal AWG is demonstrated based on super-high-/spl Delta/ waveguides. Resin-filled trenches are formed in the slab region to compensate for the temperature-dependent wavelength shift. Small wavelength shift of 0.03 nm is achieved for the temperature range 0-65/spl deg/C with almost no spectral degradation.     

Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material

Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si/sup +/ implantation followed by annealing at 750 degrees C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56 dBcm/sup -1/, respectively, at a wavelength of 1.15 mu m.<>     

Wavelength dependent propagation loss characteristics of SiGe/Si planar waveguides

The propagation loss of Si/sub 0.9/Ge/sub 0.1//Si planar optical waveguides has been measured at wavelengths of 1.15 and 1.523 mu m. The results show that these waveguides have a low propagation loss (<1 dB/cm) at a wavelength of 1.523 mu m, which is due to the intrinsic absorption of SiGe whereas at a wavelength of 1.15 mu m its loss is determined by both the SiGe absorption edge and defects at the SiGe/Si interface.<>     

Cerenkov-type second-harmonic generation in KNbO3channel waveguides

Cerenkov-type second-harmonic generation using KNbO₃ channel waveguides produced by MeV He⁺-ion implantation is presented from the viewpoint of device design. We derive the Cerenkov phase-matching condition for multimode waveguides and utilize Cerenkov-angle analysis as a tool for contact-free measurement of the effective indexes of guided modes of ion-implanted KNbO₃ channel waveguides at a wavelength of 860 nm. The measured mode indexes are in full agreement with calculations based on the effective-index method and the refractive index-depth profiles of ion-implanted KNbO₃ waveguides. The efficiency of Cerenkov-type second-harmonic generation is modeled using analytical approximations of the field distributions of the fundamental and the Cerenkov-radiation modes in embedded-channel waveguides. The acceptance width for Cerenkov-type frequency doubling in these ion-implanted waveguides is about one order of magnitude wider than for noncritical phase-matched second-harmonic generation in bulk KNbO₃ crystals. Based on the theoretical simulations, guidelines for optimum device design are given, and the possibility to increase the ultimate conversion efficiency to about 30% W^-1 cm^-1 through lateral-resonance enhancement of the second-harmonic field in KNbO₃ channel waveguides is demonstrated