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1.
Chang WS  Bauerdick S  Jeong MS 《Ultramicroscopy》2008,108(10):1070-1075
Scanning near-field optical microscopy (SNOM) achieves a resolution beyond the diffraction limit of conventional optical microscopy systems by utilizing subwavelength aperture probe scanning. A problem associated with SNOM is that the light throughput decreases markedly as the aperture diameter decreases. Apertureless scanning near-field optical microscopes obtain a much better resolution by concentrating the light field near the tip apex. However, a far-field illumination by a focused laser beam generates a large background scattering signal. Both disadvantages are overcome using the tip-on-aperture (TOA) approach, as presented in previous works. In this study, a finite difference time domain analysis of the degree of electromagnetic field enhancement is performed to verify the efficiency of TOA probes. For plasmon enhancement, silver is deposited on commercially available cantilevered SNOM tips with 20nm thicknesses. To form the aperture and TOA in the probes, electron beam-induced deposition and focused ion beam machining were applied at the end of the sharpened tip. The results show that cantilevered TOA probes were highly efficient for improvements of the resolution of optical and topological measurement of nanostructures.  相似文献   

2.
The tetrahedral tip is introduced as a new type of a probe for scanning near-field optical microscopy (SNOM). Probe fabrication, its integration into a scheme of an inverted photon scanning tunnelling microscope and imaging at 30 nm resolution are shown. A purely optical signal is used for feedback control of the distance of the scanning tip to the sample, thus avoiding a convolution of the SNOM image with other simultaneous imaging modes such as force microscopy. The advantages of this probe seem to be a very high efficiency and its potential for SNOM at high lateral resolution below 30 nm.  相似文献   

3.
We present the first results obtained with a new instrument designed and built to study DNA-protein interactions at the single molecule level. This microscope combines optical tweezers with scanning probe microscopy and allows us to locate DNA-binding proteins on a single suspended DNA molecule. A single DNA molecule is stretched taut using the optical tweezers, while a probe is scanned along the molecule. Interaction forces between the probe and the sample are measured with the optical tweezers. The instrument thus enables us to correlate mechanical and functional properties of bound proteins with the tension within the DNA molecule. The typical friction force between a micropipette used as probe and a naked DNA molecule was found to be <1 pN. A 16 micro m DNA molecule with approximately 10-15 digoxygenin (DIG) molecules located over a 90 nm range in the middle of the DNA was used as a model system. By scanning with an antidigoxygenin (alpha-DIG) antibody-coated pipette we were able to localize these sites by exploiting the high binding affinity between this antibody-antigen pair. The estimated experimental resolution assuming an infinitesimally thin and rigid probe and a single alpha-DIG/DIG bond was 15 nm.  相似文献   

4.
This paper presents a two coupled oscillators model to describe the dynamics of a tuning fork with a probe attached. The two coupled oscillators are unbalanced only in their effective masses and the damping ratios. By applying a frequency domain system identification approach in experimental investigation of various probe attachment cases, a good accuracy of the model is demonstrated. The effectiveness of the model is further demonstrated in quantitative analysis of the noise performance and the sensitivity of force sensing with a tuning fork probe. Compared with existing models, the proposed model can more accurately characterize the dynamics of a tuning fork probe.  相似文献   

5.
In typical scanning probe microscope experiment a three‐dimensional image of a substrate is obtained. For a given scanning mechanism, the time needed to image an area depends mainly on the number of samples and the size of the image. The imaging speed is further compromised by drifts associated with the substrate and the piezoscanner. It is therefore desirable to improve the imaging speed with limited impact to the effective resolution of the resulting image. By utilizing an adaptive sampling scheme with fractal compression technique, we have demonstrated that the number of the required samples can be significantly reduced with minimal impact to the image quality. SCANNING 30: 463–473, 2008. © 2008 Wiley Periodicals, Inc.  相似文献   

6.
The electronic characteristics of semiconductor-based devices are greatly affected by the local dopant atom distribution. In Mg-doped GaN, the clustering of dopants at structural defects has been widely reported, and can significantly affect p-type conductivity. We have studied a Mg-doped AlGaN/GaN superlattice using transmission electron microscopy (TEM) and atom probe tomography (APT). Pyramidal inversion domains were observed in the TEM and the compositional variations of the dopant atoms associated with those defects have been studied using APT. Rarely has APT been used to assess the compositional variations present due to structural defects in semiconductors. Here, TEM and APT are used in a complementary fashion, and the strengths and weaknesses of the two techniques are compared.  相似文献   

7.
The true anisotropic images taken with the polarization modulation near‐field optical microscope are often influenced by the linear dichroism of the tapered fibre probe. In this paper, we develop a new method to separate the anisotropic image form probe's dichroism . Our calculations show that the near‐field optical image is simply a vector sum of the sample's dichroism and the probe's dichroism, when the probe's anisotropy is small. With this result, we demonstrate the true anisotropic images of poly(phenylene vinylene) (PPV) thin films. The PPV films show non-uniform mesoscale dichroic domains with average domain size, ∼ 0.3 mm, and the coefficient for linear dichroism is 1.25 × 104 cm−1.  相似文献   

8.
Scanning probe microscopes derived from the scanning tunnelling microscope (STM) offer new ways to examine surfaces of biological samples and technologically important materials. The surfaces of conductive and semiconductive samples can readily be imaged with the STM. Unfortunately, most surfaces are not conductive. Three alternative approaches were used in our laboratory to image such surfaces. 1. Crystals of an amino acid were imaged with the atomic force microscope (AFM) to molecular resolution with a force of order 10?8 N. However, it appears that for most biological systems to be imaged, the atomic force microscope should be able to operate at forces at least one and perhaps several orders of magnitude smaller. The substitution of optical detection of the cantilever bending for the measurement by electron tunnelling improved the reliability of the instrument considerably. 2. Conductive replicas of non-conductive surfaces enabled the imaging of biological surfaces with an STM with a lateral resolution comparable to that of the transmission electron microscope. Unlike the transmission electron microscope, the STM also measures the heights of the features. 3. The scanning ion conductance microscope scans a micropipette with an opening diameter of 0·04-0·1 μm at constant ionic conductance over a surface covered with a conducting solution (e.g., the surface of plant leaves in saline solution).  相似文献   

9.
A common source of distortion in scanning probe microscope (SPM) images is “thermal drift,” the slow thermal expansion of different materials in the sample and microscope due to small changes in temperature over the course of a scan. We describe here a method for correcting this distortion by immediately following each image scan with a rescan of a small, narrow portion of the same area with the slow and fast scan axes reversed. The original, full image is corrected using a low-order polynomial mapping function, with coefficients determined by a pixel-wise comparison between the original full and rescanned partial images. We demonstrate here that this method can correctly remove distortion from a wide range of images with a precision of better than one pixel, and is also robust to common imaging artifacts. We also address some of the programming considerations that have gone into implementing this computationally intensive technique, which can now be performed using standard desktop hardware in times that range between a few seconds and a few minutes.  相似文献   

10.
In scanning probe microscopy (SPM), the image acquisition time is usually very long because of the limited speed with which the scanning device can trace the topography of the specimen under feed-back control. This limitation is often brought about by the natural frequency of the scanner in the direction perpendicular to the sample plane that confines the usable bandwidth of the feed-back loop. In this paper, we present a piezo-ceramic scanner that provides a large scan range and at the same time allows for adjustment of the probe-to-sample distance faster by about one order of a magnitude than a conventional setup. This is achieved through the combination of a large single tube scanner that provides a high-scan range and a small piezo element for swift motion in the direction perpendicular to the sample plane. The natural frequency in this direction lies at about 275 kHz. We outline the design considerations to avoid disturbing excitation of the scanner through the fast piezo element.  相似文献   

11.
We demonstrate high resolution imaging with microfabricated, cantilevered probes, consisting of solid quartz tips on silicon levers. The tips are covered by a 60‐nm thick layer of aluminium, which appears to be closed at the apex when investigated by transmission electron microscopy. An instrument specifically built for cantilever probes was used to record images of latex bead projection patterns in transmission as well as single molecule fluorescence. All images were recorded in constant height mode and show optical resolutions down to 32 nm.  相似文献   

12.
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14.
This paper concerns the application of scanned probe microscopy to the study of thin silicon dioxide films. We show how the formation of 7 nm diameter silicon carbide particles on a silicon surface during high temperature processing affects the quality of subsequently grown oxide. To measure the local dielectric properties of thin oxides we have developed a new type of probe measurement which allows high resolution surface imaging, based on an atomic force microscope, combined with local electrical measurements. The spatial resolution of the electrical measurements was shown to be < 40 nm. Applying the technique to 500 nm capacitors fabricated on device quality oxide it was shown that some capacitors broke down during imaging while others remained stable at electric fields up to 30 MVcm?1. This higher breakdown strength may have substantial impact on future electronic device reliablity and performance.  相似文献   

15.
We introduce a method of dye fluorescence excitation and measurement that utilizes a near-field scanning optical microscope (NSOM). This NSOM uses an apertureless metallic probe, and an optical system that contains a high numerical aperture (NA) objective lens (NA = 1.4). When the area which satisfies NA < 1 is masked, the objective lens allows for the rejection of possible transmitted light (NA < 1) through the sample. In such conditions, the focused spot consists of only the evanescent field. We found that this NSOM system strongly reduces the background of the dye fluorescence and allows for the measurement of the fluorescence intensity below the diffraction limit of the excitation source.  相似文献   

16.
Scanning probe microscopes (SPMs) share a number of common features which give the techniques advantages over conventional light and electron microscopy. First, high resolution, up to the atomic level, is possible in certain cases, and second, they are nondestructive, requiring no staining or coating and the images can be obtained in the hydrated state or under water. Scanning probe microscopes, particularly scanning tunnelling microscopes (STM) and atomic force microscopes (AFM), have been used to study food-related systems, ranging from relatively large structures such as starch granules to the organisation of secondary structures in proteins and the interaction of proteins. The seed storage proteins (gluten) of wheat are responsible for the viscous and elastic properties of wheat doughs that allow them to be used for a wide range of different food products. Using AFM and STM, images of individual and groups of proteins have been obtained in both the dry and hydrated states. The ability to work in liquid environments allows the conformation of proteins to be determined under conditions approaching “native.” The AFM and STM have been used to image both gliadins and glutenins and to study their aggregative behaviour in relation to gluten and dough systems.  相似文献   

17.
Chen YM  Ohkubo T  Hono K 《Ultramicroscopy》2011,111(6):562-566
We have investigated the laser assisted field evaporation phenomena of ZnO, and MgO to explore the feasibility of quantitative three dimensional atom probe analyses of insulating oxides. To assist the field evaporation of these oxides, the usage of short wavelength 343 nm ultraviolet (UV) laser was found to be more effective than 515 nm green laser. We observed field ion microscopy (FIM) image expansion and mass peak shifting when 343 nm laser was irradiated on MgO. This phenomenon can be attributed to the laser induced electron excitation which causes the reduction of the resistivity of the specimen.  相似文献   

18.
Field‐enhanced scanning optical microscopy relies on the design and fabrication of plasmonic probes which had to provide optical and chemical contrast at the nanoscale. In order to do so, the scattering containing the near‐field information recorded in a field‐enhanced scanning optical microscopy experiment, has to surpass the background light, always present due to multiple interferences between the macroscopic probe and sample. In this work, we show that when the probe–sample distance is modulated with very low amplitude, the higher the harmonic demodulation is, the better the ratio between the near‐field signal and the interferometric background results. The choice of working at a given n harmonic is dictated by the experiment when the signal at the n + 1 harmonic goes below the experimental noise. We demonstrate that the optical contrast comes from the nth derivative of the near‐field scattering, amplified by the interferometric background. By modelling the far and near field we calculate the probe–sample approach curves, which fit very well the experimental ones. After taking a great amount of experimental data for different probes and samples, we conclude with a table of the minimum enhancement factors needed to have optical contrast with field‐enhanced scanning optical microscopy.  相似文献   

19.
A novel technique for scanning near‐field optical microscopy capable of point‐contact current‐sensing was developed in order to investigate the nanometre‐scale optical and electrical properties of electrochromic materials. An apertureless bent‐metal probe was fabricated in order to detect optical and current signals at a local point on the electrochromic films. The near‐field optical properties could be observed using the local field enhancement effect generated at the edge of the metal probe under p‐polarized laser illumination. With regard to electrical properties, current signal could be detected with the metal probe connected to a high‐sensitive current amplifier. Using the current‐sensing scanning near‐field optical microscopy, the surface topography, optical and current images of coloured WO3 thin films were observed simultaneously. Furthermore, nanometre‐scale electrochromic modification of local bleaching could be performed using the current‐sensing scanning near‐field optical microscopy. The current‐sensing scanning near‐field optical microscopy has potential use in various fields of nanometre‐scale optoelectronics.  相似文献   

20.
管道弯头缺陷检测外置式远场涡流探头设计   总被引:1,自引:0,他引:1       下载免费PDF全文
远场涡流技术在金属管道的无损检测中应用广泛,但通常需要设备停机以便将探头放入管内。为满足压力管道在役检测的需求,针对其易腐蚀的弯头部位,设计了一种在管外放置的远场涡流探头。首先,应用有限元软件对探头的结构及其激发磁场的效果进行了仿真设计;而后建立了弯头缺陷远场涡流检测仿真模型,分析了内、外壁缺陷深度与检测信号特征量的定量关系;最后搭建试验平台进行了预制缺陷检测试验。结果表明:探头电压信号的相位随缺陷深度的增加而近似线性减小,可用于缺陷深度的定量;内壁缺陷信号的相位减小得更快,利用相位特征量可对仅有外壁或内壁缺陷时的缺陷深度进行定量,而不能对两种缺陷都存在的情况进行定量。  相似文献   

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