FLASH ROM 28F256和29C256的14 MeV中子辐照实验 …

给出了国内首次ＦＬＡＳＨ ＲＭＯ器件的中子辐照效应实验研究结果，发现２８Ｆ２５６和２９Ｃ２５６器件的１４ＭｅＶ中子辐照效应不同于以往所认国的单粒子效应，它只有“０”→“１”错误。错误发生有个中子注量阈值，当中子注量小于某一个值时，无错误；当中子注量达到一定值时，开始出身错误，随着中子注量的增加，错误数增加，直到所有“０”变为“１”。动态监测和静态加电的器件都出现硬错误，不能用编程器重新写入数据。错     

浮栅ROM器件γ射线、X射线和中子辐射效应实验研究

本工作涉及浮栅ROM器件AT29C256的γ射线、X射线和反应堆快中子辐照实验测量。测量结果表明，浮栅ROM器件γ射线、X射线和快中子辐照效应是典型的总剂量效应。错误发生存在剂量阈值，开始出错时的错误数及错误地址不确定，错误数随辐照剂量或注量的增大而增加。     

浮栅ROM器件γ辐射效应实验研究

给出了浮栅ROM器件的γ辐照效应实验结果。器件出现错误有个累积剂量阈值，当累积剂量小于某一值时，无数据错误。当累积剂量达到一定值时，开始出现数据错误。随着累积剂量的增加，错误数增加，动态监测和静态加电的器件都出现数据错误，且不能用编程器重新写入数据。然而不加电的器件在更高的累积剂量辐射下未出现错误，而且可以用编程器重新写入数据。     

1MeV中子辐照SiGe HBT器件的数值模拟

分析了SiGe HBT器件中子辐照效应损伤机理。运用MEDICI软件,对SiGe HBT器件中子辐照效应的数值模拟进行了探索性研究。计算了1MeV中子在不同辐照注量下对SiGe HBT器件交直流特征参数的影响规律;中子辐照损伤与SiGe HBT器件中Ge组分含量关系;以及不同缺陷类型对SiGe HBT器件交直流特征参数的影响规律。通过对SiGe HBT器件辐照效应的数值模拟计算,验证了相关辐照实验得出的规律。     

用于单粒子效应辐照实验的CYCIAE-100白光中子源研究

中子诱发单粒子效应会影响航空飞行器和地面核设施用电子器件的可靠性。基于质子加速器打靶产生的白光中子束是研究电子器件中子单粒子效应的重要中子源。通过开展辐照实验获取器件中子单粒子效应截面或阈值等信息,能够预测器件在中子辐射环境中的失效率,并为有针对性抗辐射加固提供数据支撑。中国原子能科学研究院100 MeV质子回旋加速器(CYCIAE-100)通过质子轰击W靶发生散裂反应可以产生具有连续能量的白光中子。本文基于核反应理论,采用蒙特卡罗方法模拟了100 MeV质子与W靶相互作用产生的中子的产额、能谱和角分布,模拟结果表明,平均1个100 MeV质子可以产生0.33个中子;中子能量范围为0～100 MeV,且随着能量的增加中子注量先增加后减小,峰值在1 MeV附近;沿质子束方向中子角分布具有轴对称性,且随着出射角的增加,中子注量先减小后增加,在90°时,中子注量最小。选取0°出射方向的中子束开展单粒子效应实验,采用基于双液闪探测器的中子飞行时间法测量白光中子能谱,获得了能量范围为3～100 MeV的中子能谱,且当质子束为100 MeV/1μA时,在距离W靶15 m处的中子注量率为3.3×10...     

中子辐照诱导Si PIN光电二极管暗电流增大的数值模拟

分析了中子辐照诱导Si PIN光电二极管暗电流增大现象的机理,建立了Si PIN光电二极管的器件物理模型和中子辐照效应模型。运用MEDICI软件进行数值模拟计算,得出了1MeV中子在辐照注量为1010～1014cm-2时,Si PIN光电二极管暗电流变化的初步规律。数值模拟结果与相关文献给出的实验结果吻合较好。     

中子辐照导致线阵电荷耦合器件电荷转移效率退化实验研究

利用TRIGA型脉冲反应堆提供的快中子，对线阵电荷耦合器件进行中子辐照实验研究。研究结果表明：在10¹²～10¹³cm^-2中子注量范围内，该器件的电荷转移效率（CTE）随辐照中子注量的增加而线性下降；电荷转移效率的下降与电荷包在沟道中的转移时间及转移电荷包的电量有关。      

位移损伤效应对AlGaN/GaN HEMT器件的影响

对AlGaN/GaN高电子迁移率晶体管(HEMT)分别进行3 MeV质子辐照和14 MeV中子辐照实验。3 MeV质子辐照下累积注量达到1×10¹⁵ cm^-2或14 MeV中子辐照下累积注量达到2×10¹³ cm^-2时，AlGaN/GaN HEMTs饱和漏电流下降，阈值电压正向漂移，峰值跨导降低。分别对3 MeV质子辐照和14 MeV中子辐照后的AlGaN/GaN HEMTs进行深能级瞬态谱(DLTS)测试。3 MeV质子辐照后缺陷浓度下降降低了反向栅极漏电流，而14 MeV中子辐照会导致缺陷浓度增加，使得反向栅极漏电流增加。根据质子和中子辐照后的缺陷能级均为(0.850±0.020) eV,推断缺陷类型均为氮间隙缺陷，质子辐照和中子辐照后氮间隙缺陷的位移导致的位移损伤效应是AlGaN/GaN HEMT器件电学性能退化的主要原因。     

超深亚微米SOINMOSFET中子辐照效应数值模拟

考虑3种特征尺寸的超深亚微米SOINMOSFET的中子辐照效应。分析了中子位移辐照损伤机理,数值模拟了3种器件输出特性曲线随能量为1MeV的等效中子在不同辐照注量下的变化关系及中子辐照环境下器件工艺参数对超深亚微米SOINMOSFET的影响。数值模拟部分结果与反应堆中子辐照实验结果一致。     

集成运算放大器的中子辐照损伤效应研究

论文针对双极型运算放大器的中子辐照损伤效应开展实验与理论研究。从双极型器件的中子辐照损伤机理出发,考虑器件电流增益随中子注量的退化,对集成运放的偏置电流、开环增益、共模抑制比与电源抑制比等敏感参数展开试验与理论研究。基于中子辐照损伤系数,针对集成运放中敏感参数随中子注量的退化进行仿真研究,并通过电路敏感性分析明确运放中子辐照损伤的敏感器件与敏感单元。     

Synthesis of the element 102 of mass number 256

An -active nuclide of the element 102 having mass number 256 has been synthesized in the nuclear reaction U²³⁸ (Ne²², 4n) No²⁵⁶. The nuclide was recorded and identified through the daughter nuclide Fm ~2. The measured half-life of the nuclide No²⁵⁶ was found to be 8 sec.The energy dependence of the formation cross section of nuclide No²⁵⁶ in the U²³⁸ + Ne²² reaction was studied. It peaks in the 112 MeV region. The cross section is 4.5·10^–32 cm² in the area of the peak.This work was carried out using the internal beam of the three-meter cyclotron of the Nuclear Reactions Laboratory, a subdivision of the Dubna Joint Institute for Nuclear Research.Translated from Atomnaya Energiya, Vol. 16, No. 3, pp. 195–207, March, 1964     

Synthesis of the isotope of element 103 (lawrencium) with mass number 256

A new isotope of element 103 with mass number 256 was synthesized by means of the nuclear reaction₉₅Am²⁴³ (₈O¹⁸ 5n)₁₀₃Lw²⁵⁶.The detection and identification of₁₀₃Lw²⁵⁶ was made through the isotope₁₀₀Fm²⁵², a product of electron capture in₁₀₁Mv²⁵² produced by -decay of₁₀₃Lw²⁵⁶. The half-life of₁₀₃Lw²⁵⁶ is 45 sec.The energy dependence of the₁₀₃Lw²⁵⁶ production cross section in the₉₅Am²⁴³+₈O¹³ reaction was investigated. It was the shape of a curve with a maximum at an₈O¹⁸ ion energy 96 MeV (lab system). The half-width of the curve is 9 MeV. At the maximum, the cross section is 6·10^–32 cm².The work was carried out with the internal beam of the three-meter, multiply-charged ion cyclotron of the Laboratory for Nuclear Research, JINL.Translated from Atomnaya Énergiya, Vol. 19, No. 2, pp. 109–113, August, 1965     

Theoretical electron-atom elastic scattering cross sections: Selected elements, 1 keV to 256 keV

Calculated differential elastic electron scattering cross sections for 24 selected elements are presented in tabular form in the energy range 1 to 256 keV at values of 2ⁿ keV. The total elastic and momentum-transfer cross sections are tabulated also. Parameters for 12-parameter analytic fits to the differential values are given for 80 elements in a second table. The calculations were done in the relativistic static approximation with relativistic atomic wavefunctions for the heavier elements (Z > 35).     

Ionizing Radiation Effects on the Sperry Rand Nonvolatile 256-Bit MNOS Ram Array (SR2256)

Ionizing dose-rate and total dose tests have been performed on the Sperry Rand 256-MNOS (SR 2256) RAM array. Results from these tests have shown that the devices can survive dose-rate levels as high as 1.0 × 1012 Rad(Si)/sec (in a 2 MeV electron-beam environment) with no loss of memory data or permanent degradation in device operation. However, under certain test conditions, the "Read" and "Write" modes of the arrays can be temporarily interrupted. In the Read mode, this interruption can be induced at dose-rate levels of 4 × 108 Rads(Si)/sec and higher if the radiation burst is applied approximately 1 microsecond in time before the start of the "Data Output" signals. In the Write mode, disturb mechanism can be generated in a 2 MeV electron beam at dose-rate levels of 2.4 × 1011 Rad(Si)/sec and higher if the burst is applied at the start of the "Memory Enable" signal. Also, the total dose tests have shown that the memory arrays (while cycling through its operational modes at the maximum rates) can accumulate a total dose of gamma radiation in excess of 1 × 105 Rad(Si) and survive. At reduced cycle rates, the arrays can operate and survive up to 3 × 105 Rad(Si).     

电磁辐射的生物学效应

简要介绍了电磁辐射生物学效应机制的几种研究理论,从整体生物效应、细胞效应,以及电磁辐射对基因表达和对肿瘤形成的影响等方面总结了近年来电磁辐射生物学效应的研究成果,并对今后的研究工作提出了几点个人看法.     

电离辐射对狗红细胞膜的作用及氧的影响

本文以ANS荧光探针方法观察不同剂量γ线照射狗红细胞膜后的变化及O_2对此效应的影响。结果表明:随照射剂量的增加而荧光强度相应减弱;无论在照射前或照射后一段时间内增加红细胞膜悬液中O_2的含量均可加重辐射效应,对此结果文中略加讨论。     

Mssbauer study of the orientation of the magnetic moments in Fe-based nanocrystalline alloys

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