Wide band-gap investigation of modulated BeZnO layers via photocurrent measurement

We grew modulated BeZnO layers by hybrid plasma-assisted molecular-beam epitaxy/electron-beam deposition. A wide band-gap investigation of the modulated Be _x Zn_1−x O by means of photocurrent (PC) spectroscopy was conducted. The band-gap energy was directly acquired from the wavelength of the PC peak, caused by the band-to-band transition. By increasing x, which was the rate of the Be elements, the optical band-gap energy was empirically fitted by E _BeZnO(x) = 6.32(x–1)x + 7.305x + 3.295. We expect that this finding can open new possibilities for wide band-gap engineering of BeZnO layers, which can be utilized as barrier layers in active layers consisting of ZnO/BeZnO quantum well structures and solar-blind ultraviolet photodetectors.     

Structural and electrical studies of Cd<Subscript>1−x</Subscript>Zn<Subscript>x</Subscript> Te thin film by vacuum evaporation technique

Cd_1−xZn_xTe (where x = 0.02, 0.04, 0.06, 0.08) thin film have been deposited on glass substrate at room temperature by thermal evaporation technique in a vacuum at 2 × 10⁻⁵ torr. The structural analysis of the films has been investigated using X-ray diffraction technique. The scanning electron microscopy has been employed to know the morphology behaviour of the thin films. The temperature dependence of DC electrical conductivity has been studied. In low temperature range the thermal activation energy corresponding to the grain boundary—limited conduction are found to be in the range of 38–48 μeV, but in the high temperature range the activation energy varies between 86 and 1.01 meV. The built in voltage, the width of the depletion region and the operating conduction mechanism have been determined from dark current voltage (I–V) and capacitor-voltage (C–V) characteristics of Cd_1−xZn_xTe thin films.     

Electrical phenomena in a hydrogen-containing heterogeneous system palladium-strontium cerate-barium-yttrium hydrocuprate

The proton conductivity of barium-yttrium hydrocuprate H_xYBa₂Cu₃O_7+y (x≤2,−0.1≤y≤0.1) was determined for the first time. The proton conductivity (10⁻⁶ S cm⁻¹ at 470 K, with an activation energy of −0.6 eV) accounts for 0.1% of the total dc conductivity. Owing to the proton conductivity of strontium cerate (H_zSrCe_0.9Y_0.1O₃, z<0.1) and hydrocuprate layers in the Pd/cerate/hydrocuprate/cerate/Pd sandwich structure, this heterogeneous system exhibits the properties of an electric accumulator with emf=0.6–1.2 V.     

Studies on growth mechanism of HgCdTe epilayer on Si grown by HWE

In this paper, the mechanism of Hg_1−xCd_xTe/Si heterojunction grown by HWE (Hot Well Epitaxy) was studied. Opitical characterizations were shown with FTIR, the composition x = 0.39 was deduced by using MIR transmittance, the absorbing peak at 319.4 cm⁻¹ was measured by FIR transmittance, 319.4 cm⁻¹ confirmed the existence of Si–Te bond of at Si/HgCdTe interfacial layer. The I-V characteristics at both room temperature and 77 K of HgCdTe (n-type)/Si (p-type) heterojunction show that the good p-n heterojunction properties was obtained by using HWE. XRD study confirmed the formation of (111) oriented HgCdTe on (211) Si. Morphology of a cross section observed using EPMA indicates the columnar growth of HgCdTe. An analysis of interfcial layer by EPMA indicated presence of three layers composed of Si + Te, Si + Te + Hg and Si + Te + Cd + Hg. Among them, the most important one is the first layer. The problem of lattice mismatch and the difference of thermal expansion coefficient between Si and CdTe or HgTe may be improved by formation of Si–Te stable chemical bond through bybridization orbital bonding between Si and Te. The second and third layers are formed by evaporation-interdiffusion. Formation of the whole interfacial layer provides the appetency for the growth of (111) Hg_1−xCd_xTe epilayer on (211) Si substrate.     

InGaAsp-i-n photodiodes for fibre-optic communication

High purity layers of In_{1 −x} Ga _x As have been grown by liquid phase epitaxy using a novel impurity gettering technique with rare earth atoms. The electron concentration could thus be decreased from 3 × 10¹⁸ cm⁻³ to 2·4 × 10¹⁵ cm⁻³ and the mobility increased from 7 110 cm²/Vs to 18,981 cm²/Vs (100 K). The excellent quality of the layers has been evidenced by X-ray diffraction and photoluminescence measurements. The fabrication ofp-i-n photodiodes using this technique is described and reliability aspects addressed.     

Thin film CdZnS/CuInSe2 solar cells by spray pyrolysis

Cd_1−xZn_xS/CuInSe₂ solar cells having efficiencies in the range of 2·3% were fabricated by spray pyrolysis. The best cell had the following parameters:V _oc = 305 mV,J _sc = 32 mA/cm², FF = 0·32 area = 0·4 cm² and efficiency = 3·149%.V _oc versus temperature measurements showed that the electron affinity difference was 0·22 eV. Forward dark current versus voltage curves were plotted and a possible current mechanism occurring in these cells has been proposed.     

Deep surface states on the interface between SiC and its native thermal oxide

Deep surface states are discovered on the interface between 6H-SiC and its native thermal oxide by analyzing the C-V characteristics of metal-oxide-semiconductor structures measured at a high temperature (600 K). The maximum of the density of states distributed according to energy (D _tm=2×10¹² cm⁻²· eV⁻¹) is at an energy about 1.2 eV below the bottom of the conduction band of SiC. It is postulated that the states discovered are similar in nature to the P _b centers observed in the SiO₂/Si system. Pis’ma Zh. Tekh. Fiz. 23, 55–60 (October 26, 1997)     

Crystal,electronic and luminescence properties of Eu2+-doped Sr2Al2–xSi1+xO7–xNx

The crystal and electronic structures, as well as the luminescence properties of Sr₂Al_2–xSi_1+xO_7–xN_x:Eu²⁺ are reported. First-principles calculations energetically confirm that the Al and Si atoms are in partial ordering in the 2a and 4e sites in Sr₂Al₂SiO₇. In addition, the band structure calculation shows that Sr₂Al₂SiO₇ has an indirect band gap with an energy gap of about 4.07 eV, which is in good agreement with the experimental data (～5.3 eV) obtained from the diffuse reflection spectrum. The crystal structure of Sr₂Al₂SiO₇ can be modified by Si–N substitution for Al–O in the lattice with a maximum solubility of about x ¼ 0.6. The average bond length of Eu_Sr^–(O,N) slightly increases although the lattice parameters decrease with the incorporation of Si–N in Sr₂Al₂SiO₇:Eu²⁺. Under excitation in the visible spectral region, Sr₂Al_2–xSi_1+xO_7–xN_x:Eu²⁺ emits blue to yellow light with a broad emission band in the range of 480–570 nm, varying with both the Eu concentration and the x value. The red shift of the emission band of Eu²⁺ is associated with an increase in the crystal-field splitting and the covalency, which arise from the incorporation of nitrogen as well as the energy transfer between the Eu ions at high Eu concentrations. Moreover, the Eu ions have a strong effect on both the concentration quenching and the thermal quenching in Sr₂Al_2–xSi_1+xO_7–xN_x. The temperature dependence of photoluminescence indicates that Sr₂Al_2–xSi_1+xO_7–xN_x:Eu²⁺ shows strong thermal quenching due to the dominant nonradiative process at room temperature.     

Temperature-dependent luminescence of gallium-substituted YAG:Ce

The temperature-dependent lifetime of trivalent cerium was determined in (Y_1−x Ce _x )₃Al_2.5Ga_2.5O₁₂ (where x = 0.1 and 0.2) over a temperature range of 20−120 °C. In both samples, the quenching temperature is significantly lower compared to (Y_1−x Ce _x )₃Al₅O₁₂. The difference in quenching temperatures is explained by evaluating the changes in the lattice, which occur as a result of substituting the Al³⁺ for Ga³⁺. The information presented in this report is useful for future design of phosphors for use as non-contact temperature sensors.     

Synthesis and characterization of Al2?xScx(WO4)3 ceramics for low-expansion infrared-transmitting windows

A low thermal-expansion material was synthesized with potential application in thermal-shock-resistant infrared-transmitting windows. The material is derived from a solid solution of Al₂(WO₄)₃, which has positive thermal expansion, and Sc₂(WO₄)₃ with a negative thermal expansion. An optimum composition of Al_0.5Sc_1.5(WO₄)₃ was identified by synthesizing solid solutions, Al_2−x Sc _x (WO₄)₃, by a solid-state route with compositions ranging from x = 0 to 2.0. A single orthorhombic phase was obtained at all compositions. A composition corresponding to x = 1.5 had a low coefficient of thermal expansion of −0.15 × 10⁻⁶/°C in the temperature range 25–700 °C. A low temperature solution combustion process was developed for this optimum composition, resulting in a single-phase powder with a surface area of ~14 m²/g and average particle size (as determined from surface area) of 92 nm. The powder was consolidated by slip-casting, sintering, and hot-isostatic pressing into visibly translucent disks with a peak in-line transmittance of 73 % at 2300 cm⁻¹. Significant infrared absorption in a 1-mm-thick disk of this material begins near 2200 cm⁻¹ and features three absorptions arising from 2-phonon transitions at 2002, 1847, and 1676 cm⁻¹. The infrared and Raman spectra are interpreted in terms of 1-, 2-, and 3-phonon vibrational transitions.     

Spectroscopic studies of TeO<Subscript>2</Subscript>–ZnO–Er<Subscript>2</Subscript>O<Subscript>3</Subscript> glass system

Series of glass based on the (80 − x)TeO₂–20ZnO–(x)Er₂O₃ system (0.5 mol% ≤ x ≤ 2.5 mol%) has successfully been made by melt quenching technique. The optical properties of glass have been investigated by means of IR and Raman spectroscopy. It is observed that as the Er₂O₃ content is being increased, the sharp IR absorption peaks are consistently shifted from 650 to 672 cm⁻¹ while the Raman shift intensity around 640–670 cm⁻¹ is decreases but increases around 720–740 cm⁻¹. It is found out that both phenomenons are related to the structural changes between the stretching vibration mode of TeO₄ tbp and TeO₃ tp, and bending vibration mode of Te–O bonds in the glass linkages.     

High energy crystal field excitations in Pr x Y1−x Ba2Cu3O7−δ

We have measured the high energy crystalline electric field transitions in samples of Pr _x Y_1−x Ba₂Cu₃O_7−δ withx ≈ 0·5 andx ≈ 1. The fully Pr-doped samples exhibits three strong transitions with excitation energies of about 65, 85 and 105 meV, plus three more weaker ones at 113, 123 and 132meV. Magnetic intensity is observed in the same energy range in thex=0.5 sample but is largely structureless in character, with only one clear peak at about 109meV. The large number of transitions would seem to indicate a Pr valence of 3+, rather than 4+, but the intrinsically broad character of the excitations is evidence for a dynamically mixed valence state.     

Free-standing In2O3(ZnO)m superlattice microplates grown by optical vapor supersaturated precipitation

Here, we fabricated In₂O₃(ZnO)_m (IZO) superlattice microplates with hexagon morphologies by the substrate-free optical vapor supersaturated precipitation. The IZO microplates possessed a superlattice structure with a large m number, i.e., m?=?23, consisting of layered alternating stacks of octahedral InO₂^? as inversion boundaries and layered InZn_mO_m+1⁺ as a zig-zag modulated pattern. The Raman peak at 613 cm^?1 confirmed the superlattice of the IZO microplates. The broad asymmetric excitonic photoluminescence (PL) emission with the photon energy of 3.236 eV indicated the heavy doping of indium in the IZO, resulting a redshift of?~?32 meV from the near-band-edge emission. The unusual negative thermal quenching of PL intensity was also observed. Moreover, the anisotropic electrical properties of the IZO superlattice microplates were manifested, for the first time, where the in-plane conductivity was two orders of magnitude higher than out-plane one. The present work provided new insight into the free-standing IZO superlattice microdevices for future optoelectronic applications.

     

Preparation and properties of (CdS) x -(PbS)1 −x thin-film composites

A modified chemical deposition process is employed for the preparation of thin-film (CdS) _x -(PbS)_{1 −x} composites with 0·2 ≤x ≤ 0·8. Cadmium sulphate, lead acetate and thiourea are used as the basic source materials. The electrical conductivity is found to decrease with increasing composition parameterx up to 0·5 and increase for further increase inx. The composites are polycrystalline as is revealed from XRD and microscopic observations and show phases of both cubic and hexagonal CdS, cubic CdO and PbS, and tetragonal PbO and PbO₂. Additional peaks of free elemental Cd and S have also been observed. For all the phases no significant variation in lattice parameters withx has been observed. The optical absorption studies show the presence of four well-defined absorption edges at approximately 0·45 eV, 1·05eV, 1·80 eV and 2·35 eV, at the same energies for allx values. The absorption coefficient is of the order of 10⁴ cm⁻¹ and mode of band-to-band transition is of the direct type.     

Fabrication and comparative study of top-gate and bottom-gate ZnO–TFTs with various insulator layers

Transparent ZnO thin film transistors (ZnO–TFTs) with different structures and dielectric layers were fabricated by rf magnetron sputtering. The PbTiO₃, AlO _x , SiN _x and SiO _x films were attempted to serve as the gate dielectric layers in the devices, respectively, and XRD was employed to investigate the crystal structure of ZnO films deposited on these dielectric layers. The optical properties of transparent TFTs were measured and revealed the average transmittance ranged from 60 to 80% in the visible part of the spectrum. Electrical measurement shows the properties of the ZnO–TFTs have great relations with the device structure. The bottom-gate TFTs have better behaviors than top-gate ones with the mobility, threshold voltage and the current on/off ratio of 18.4 cm² V⁻¹ s⁻¹, −0.7 V and 10⁴, respectively. The electrical difference of the devices may be due to different character of the interface between the channel and dielectric layers.     

Preparation, characterization and conductivity studies of Li3?2xAl2?xSbx(PO4)3

New NASICON type materials of composition, Li_3−2x Al_2−x Sb _x (PO₄)₃ (x = 0·6 to 1·4), have been prepared and characterized by powder XRD and IR. D.C. conductivities were measured in the temperature range 300–573 K by a two-probe method. Impedance studies were carried out in the frequency region 10²−10⁶ Hz as a function of temperature (300–573 K). An Arrhenius behaviour is observed for all compositions by d.c. conductivity and the Cole-Cole plots obtained from impedance data do not show any spikes on the lower frequency side indicating negligible electrode effects. A maximum conductivity of 4·5 × 10⁻⁶ S cm⁻¹ at 573 K was obtained for x = 0·8 of the Li_3−2x Al_2−x Sb _x (PO₄)₃ system.     

Samarium diffusion in polycrystalline samarium sulfide

The diffusion of samarium in polycrystalline samarium sulfide with a superstoichiometric composition of Sm_1.13S has been studied at T = 1000 and 1100°C. It is concluded that Sm atoms predominantly migrate over the boundaries of monocrystalline domains of the polycrystalline sample. The diffusion coefficient varies within D ≈ 10⁻²−10⁻³ cm²/s. In the temperature dependence of the diffusion coefficient, the diffusion activation energy is evaluated at E ∼ 4.6 eV and the preexponential term at D ₀ ≈ 1.8 × 10¹⁵ cm²/s.     

Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique

Photoluminescence (PL) properties of Ammonium Silicon Fluoride samples prepared by vapour etching technique are investigated with respect to excitation energy, excitation intensity and temperature. Ageing effect at ambient conditions is also examined by Fourier Transform Infrared Spectroscopy. PL peak maximum blue shifts as the excitation intensity increases and saturates at 2.106 eV. Temperature-dependent variations in PL peak energies and intensities cannot be thoroughly elucidated via Quantum Confinement model alone and require consideration of recombination rates at Si–SiO_x interface. Temperature dependence of integrated PL intensity is treated by a three-component functional form.Infrared absorption bands at 1060 cm^− 1, 1113 cm^− 1 and 1230 cm^− 1 attain saturation with time. Agreement between the saturation time of SiO_x longitudinal optic mode at 1230 cm^− 1 and that deduced from PL measurements in literature is noted. It is shown that PL emissions are intrinsic in nature and have a significant excitonic contribution.     

Superheating of YBa2Cu3O7−x thin-film microbridges

It is found that the hysteresis that develops with decreasing temperature in the current-voltage characteristics of thin-film YBa₂Cu₃O_7−x microbridges is due to superheating of the bridges by the transport current. The heat transport coefficient is determined to be α=5500–7500 V/(cm²·K) and the thermal resistance of the YBa₂Cu₃O_7−x /MgO film-substrate interface is R _if=(1.3–1.8)×10₋₄ (cm²·K)/W. Pis’ma Zh. Tekh. Fiz. 23, 56–62 (June 26, 1997)     

Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine

Gallium indium phosphide (Ga _x In_1−x P) epitaxial layers were grown on GaAs substrates by chemical beam epitaxy (CBE) without thermally precracking the group V precursor. Trisdimethylaminophosphine (TDMAP), triisopropylgallium (TIPGa), and ethyldimethylindium (EDMIn) were used as the phosphorus, gallium and indium sources, respectively. Ga _x In_1−x P was grown without group V precracking for substrate temperatures in the range of 400–520 °C. Above 500 °C, the epilayers had a hazy appearance presumably due to being phosphorus deficit. A strong solid composition dependence on substrate temperature was observed. The samples were In-rich at low growth temperatures and Ga-rich at high growth temperatures. It was possible to grow the Ga _x In_1−x P epilayers over a large composition range with good morphology and strong photoluminescence. Values of full width at half maximum were as low as 45 meV at 14 K photoluminescence measurements.