Evaluation of the effective cross‐sections for recombination and trapping in the case of pure spinel

In this paper, we have investigated the evolution of the secondary electron emission in the case of pure spinel during electron irradiation, achieved in a scanning electron microscope at room temperature, which is derived from the measurement of the induced and the secondary electron currents. It was observed from the experimental results, that there are two regimes during the charging process: a plateau followed by a linear variation, which are better identified by plotting the logarithm of the secondary electron emission yield lnσ as function of the total surface density of trapped charges in the material Q_T. For positive charging, E₀ = 1.1 and 5 keV, the slope of the linear part, whose value is of about 10^?10 cm² charge^?1, is independent of the primary electron energy. It is interpreted as a microscopic cross section for electron–hole recombination. For negative charging of pure spinel, E₀ = 15 and 30 keV, the slope is associated with an electron trapping cross section close to 10^?14 cm² charge^?1, which can be assigned to the microscopic cross section for electron trapping. This trapping cross section is four orders of magnitude lower than the recombination one.