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1.
β-Bi2O3 compositions were prepared to evaluate the effect on properties of using mixed dopants. Baseline compositions containing 28 mol% of the alkaline-earth oxides CaO, SrO, or BaO were used for comparison. When the alkaline earths were combined in pairs to dope the bismuth oxide, the resulting properties were intermediate between the baseline end members. The data suggest that the transformation temperature for forming the high-conductivity β1 phase can be varied continuously over a temperature range of about 565° to 750°C. Utilization of additional additives having different ionic size or valence charge compared with the alkaline earths resulted in no observed property changes that could be attributed to the additive alone. The most important variables influencing the conductivity level and phase transformation temperature of β-Bi2O3 were the type and the amount of the alkaline-earth dopant in the composition.  相似文献   

2.
Binary Sb2O3-GeO2 glasses containing 45 mol% Sb2O3 and ternary Sb2O3-B2O3-GeO2 glasses containing 50 mol% GeO2 were prepared. Their densities (volumes), refractive indices, and infrared spectra were determined, and their colors and high-temperature viscosities were estimated visually. Small amounts of Sb2O3 (∼10 mol%) appear to perturb neither the Ge-O-Ge network nor those B-O-Ge networks with small B/Ge ratios (∼0.2). The B-O-Ge networks with larger B/Ge ratios (∼1.0) depolymerize in the presence of even less Sb2O3. Amounts of Sb2O3 >10 mol% appear to depolymerize the Ge-O-Ge and Ge-O-B networks progressively, possibly with the formation of chains. A structurally sensitive ir isofrequency contour technique developed for ternary glass systems was applied successfully to these Sb2O3-B2O3-GeO2 glasses. These contours can thus readily detect significant network depolymerization in the absence of the usual network modifiers.  相似文献   

3.
The influence of 0–16 mol% Sb2O3 substitution for P2O5 on the properties of ZnO–P2O5 glasses has been investigated. It was shown that Sb2O3 could participate in the glass network and thermal stability of the glasses decreased with increasing Sb2O3 content. Glass transition temperature T g, softening temperature T s, and water durability all decreased firstly (up to 6 mol% Sb2O3 added) and then increased. Substitution of 12 mol% Sb2O3 led to a 16°C decrease in T g and 30°C decrease in T s, and weight loss of the glass was only 0.42 mg/cm2, which is ∼11 times lower than that of the glass without Sb2O3 after immersion in deionized water at 90°C for 1 day. The glass containing 12 mol% Sb2O3 might be a substitute for Pb-based glasses in some applications.  相似文献   

4.
Composites of β-Ce2O3·11Al2O3 and tetragonal ZrO2 were fabricated by a reductive atmosphere sintering of mixed powders of CeO2, ZrO2 (2 mol% Y2O3), and Al2O3. The composites had microstructures composed of elongated grains of β-Ce2O3·11Al2O3 in a Y-TZP matrix. The β-Ce2O3·11Al2O3 decomposed to α-Al2O3 and CeO2 by annealing at 1500°C for 1 h in oxygen. The elongated single grain of β-Ce2O3·11Al2O3 divided into several grains of α-Al2O3 and ZrO2 doped with Y2O3 and CeO2. High-temperature bending strength of the oxygen-annealed α-Al2O3 composite was comparable to the β-Ce2O3·11Al2O3 composite before annealing.  相似文献   

5.
Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.  相似文献   

6.
The ionic conductivity of the hafnia-scandia, hafnia-yttria, and hafnia-rare earth solid solutions with high dopant concentrations of 8, 10, and 14 mol% was measured in air at 600° to 1050°C. Impedance spectroscopy was used to obtain lattice conductivity. A majority of the investigated samples exhibited linear Arrhenius plots of the lattice conductivity as a function of temperature. For all investigated dopant concentrations the ionic conductivity was shown to decrease as the dopant radius increased. The activation enthalpy for conduction was found to increase with dopant ionic radius. The fact that the highest ionic conductivity among 14-mol%-doped systems was obtained with HfO2─Sc2O3 suggested that the radius ratio approach should be used to predict the electrical conductivity behavior of HfO2─R2O3 systems. A qualitative model based on the Kilner's lattice parameter map does not seem to apply to these systems. For the three systems HfO2─Yb2O3, HfO2─Y2O3, and Hf2O3─Sm2O3 a conductivity maximum was observed near the dopant concentration of 10 mol%. Deep vacancy trapping is responsible for the decrease in the ionic conductivity at high dopant concentrations. Formation of microdomains of an ordered compound cannot explain the obtained results. A comparison between the ionic conductivities of doped HfO2 and ZrO2 systems indicated that the ionic conductivities of HfO2 systems are 1.5 to 2.2 times lower than the ionic conductivities of ZrO2 systems.  相似文献   

7.
The intergranular phase obtained by sintering a binary mixture of ZnO + 0.5 mol% Bi2O3 was isolated by using a dilute solution of HCIO4, which etches ZnO preferentially. The combined results of selected-area electron diffraction and microscopy, microprobe analysis, and X-ray diffraction strongly indicate that the intergranular material is a polycrystalline phase of tetragonal β-Bi2O3 ( P 421 c ), rather than the amorphous ZnO-Bi2O3 phase reported earlier. It appears that the nonohmic behavior in this prototype metal-oxide varistor must be an interfacial property associated with the semiconducting ZnO grains separated by thin layers of high-resistivity Bi2O3.  相似文献   

8.
The phase equilibria in the Y2O3-Nb2O5 system have been studied at temperatures of 1500° and 1700°C in the compositional region of 0-50 mol% Nb2O5. The solubility limits of the C-type Y2O3 cubic phase and the YNbO4 monoclinic phase are 2.5 (±1.0) mol% Nb2O5 and 0.2 (±0.4) mol% Y2O3, respectively, at 1700°C. The fluorite (F) single phase exists in the region of 20.1-27.7 mol% Nb2O5 at 1700°C, and in the region of 21.1-27.0 mol% Nb2O5 at 1500°C, respectively. Conductivity of the Y2O3- x mol% Nb2O5 system increases as the value of x increases, to a maximum at x = 20 in the compositional region of 0 ≤ x ≤ 20, as a result of the increase in the fraction of F phase. In the F single-phase region, the conductivity decreases in the region of 20-25 mol% Nb2O5, because of the decrease in the content of oxygen vacancies, whereas the conductivity at x = 27 is larger than that at x = 25. The conductivity decreases as the value of x increases in the region of 27.5 ≤ x ≤ 50, because of the decrease in the fraction of F. The 20 mol% Nb2O5 sample exhibits the highest conductivity and a very wide range of ionic domain, at least up to log p O2=−20 (where p O2 is given in units of atm), which indicates practical usefulness as an ionic conductor.  相似文献   

9.
Ternary Na2O.Sb2O3.GeO2 glasses (with various [Na]/[Na + Sb] ratios) that contained ≥65 mol% GeO2 were prepared. Their densities (volumes), refractive indices, and infrared spectra were determined and their colors noted. The ternary glasses with ≥88 mol% GeO2 exhibit nearly additive volumes, refractivities, and frequencies for the main Ge-O vibration. Ternary glasses with lesser amounts of GeO2 exhibit a variety of behaviors, depending on the [Na]/[Na + Sb] ratio. Small amounts of Sb2O3 cause significant volume and refraction deviations, as well as changes in νGe-O, that can be associated with gradual elimination of GeO6 octahedra. All the information supports a model for the glasses with 65 to 88 mol% GeO2 that involves a degree of depolymerization that is greater when Na2O and Sb2O3 are present together than when either is present alone.  相似文献   

10.
The electrical conductivity and ion/electron transference numbers in Al3O3 were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O2 partial pressure over single-crystal Al2O3 at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O2 (1 atm) the conductivity above 1400°C was σ≃3×103 exp (–80 kcal/ RT ) Ω−1 cm−1, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al2O3 and MgO-doped Al2O3 showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O2 partial pressure (below 10−10 atm).  相似文献   

11.
Our analysis of the microwave dielectric properties of the δ-Bi2O3–Nb2O5 solid solution (δ-BNss) showed a continuous increase in permittivity and dielectric losses with an increasing concentration of Nb2O5. The only discontinuity was found for the temperature coefficient of resonant frequency, which is negative throughout the entire homogeneity range but reaches a minimum value for the sample with 20 mol% Nb2O5. At the same composition there is a discontinuity in the grain size of the δ-BNss ceramics. For the sample containing 25 mol% Nb2O5 two structural modifications were observed. A single-phase tetragonal Bi3NbO7, in the literature referred to as a Type-III phase, is formed in a very narrow temperature range from 850° to 880°C. A synthesis performed below or above this temperature range resulted in the formation of the end member of the δ-BNss homogeneity range. Compared with the δ-BNss the Bi3NbO7 ceramics exhibit lower microwave dielectric losses, an increased conductivity, and a positive temperature coefficient of resonant frequency.  相似文献   

12.
The Bi2O3-PbO phase diagram was determined using differential thermal analysis and both room- and high-temperature X-ray powder diffraction. The phase diagram contains a single eutectic at 73 mol% PbO and 635°C. A body-centered cubic solid solution exists above ∼600°C within a composition range of 30 to 65 mol% PbO. The compounds α-Bi2O3, σ5-Bi2O3, and γ-PbO (litharge) have wide solubility ranges. Four compounds, 6Bi2O3·PbO, 3Bi2O3·2PbO, 4Bi2O3,5PbO, and Bi2O3·3PbO, are formed in this system and the previously unreported X-ray diffraction patterns of the latter three compounds are reported. Diffraction patterns for some of these mixed oxides have been observed in ZnO-based varistors grown using Bi2O3 and PbO as sintering aids.  相似文献   

13.
A tentative phase diagram for the system Al203-Nd2O3 is presented. Three compounds were obtained: a β -A12O3-type compound, the perovskite NdAlO3, and Nd4Al2O9. The perovskite melts congruently (mp 2090°C), and the two other compounds exhibit incongruent melting behavior: β -Nd/Al2O3, mp 1900°C; Nd4Al2O9, mp 1905°C. Two eutectics exist with the following compositions and melting points: 80 mol% Al2O3, 1750°C; 23 mol% Al2O3,1800°C. Nd4Al2O9 decomposes in the solid state at 1780°C.  相似文献   

14.
Guarded measurements of the electrical conductivity of high-purity, polycrystalline Y2O3 in thermodynamic equilibrium with the gas phase were made under controlled temperature and oxygen partial pressure conditions. Data are presented as isobars from 1200° to 1600°C, and as isotherms from oxygen partial pressures of 10−1 to 10−17 atm. The ionic contribution to the total conductivity, determined by the blocking electrode polarization technique, was less than 1% over the entire range of temperatures and oxygen partial pressures studied. Yttria is shown to be an amphoteric semiconductor with the region of predominant hole conduction shifting to higher pressures at higher temperatures. In the region of p -type conduction, the conductivity is represented by the expression σ= 1.3 × 103 p O23/16 exp (-1.94/kT). The observed pressure dependence is attributed to the predominance of fully ionized yttrium vacancies. Yttria is shown to be a mixed conductor below 900°C.  相似文献   

15.
Methods of suppressing decreased conductivity in 8 mol% Y2O3-stabilized–92 mol% ZrO2 (8YSZ) with aging were investigated. Different amounts of Sc2O3 were doped into 8YSZ. The electrochemical properties of Sc2O3-doped 8YSZ were measured, and the microstructural and local structural changes were characterized. The present results indicate that an appropriate amount of Sc2O3 doping, 3 or 4 mol%, effectively suppresses decreased conductivity with aging in 8YSZ.  相似文献   

16.
Er3+-doped sodium lanthanum aluminosilicate glasses with compositions of (90− x )(0.7SiO2·0.3Al2O3)· x Na2O·8.2La2O3· 0.6Er2O3·0.2Yb2O3·1Sb2O3 (in mol%) ( x = 12, 20, 24, 40, 60 mol%) were prepared and their spectroscopic properties were investigated. Judd–Ofelt analysis was used to calculate spectroscopic properties of all glasses. The Judd–Ofelt intensity parameter Ω t ( t = 2, 4, 6) decreases with increasing Na2O. Ω2 decreases rapidly with increasing Na2O while Ω4 and Ω6 decrease slowly. Both the fluorescent lifetime and the radiative transition rate increase with increasing Na2O. Fluorescence spectra of the 4 I 13/2 to 4 I 15/2 transition have been measured and the change with Na2O content is discussed. It is found that the full width at half-maximum decreases with increasing Na2O.  相似文献   

17.
Detailed analysis of the microstructure of grain boundaries, especially triple-grain and multiple-grain junctions, in ZnO varistor materials has been performed using transmission electron microscopy. Different polymorphs of Bi2O3 are shown to exhibit different wetting properties on ZnO interfaces. Recent investigations suggest that the equilibrium configuration consists of crystalline Bi2O3 in the triple-grain and multiple-grain junctions and an amorphous bismuth-rich film in the ZnO/ZnO grain boundaries. The present investigation supports this suggestion for δ-Bi2O3 and also adds to the microstructural image and wetting properties of α-Bi2O3.  相似文献   

18.
In the system Ta2O3-Al2O5 solid solutions of metastable δ-Ta2O5 (hexagonal) are formed up to 50 mol% Al2O3 from amorphous materials prepared by the simultaneous hydrolysis of tantalum and aluminum alkoxides. The values of the lattice parameters decrease linearly with increasing Al2O3, content. The to β-Ta2O5 (orthorhombic, low-temperature form) transformation occurs at ∼950°C. The solid solution containing 50 mol% Al2O3 transforms at 1040° to 1100°C to orthorhombic TaAlO4. Orthorhombic TaAlO4 contains octahedral TaO6 groups in the structure.  相似文献   

19.
The phase equilibria in the zirconia-rich part of the system ZrO2−Yb2O3−Y2O3 were determined at 1200°, 1400°, and 1650°C. The stabilizing effects of Yb2O3 and Y2O3 were found to be quite similar with <10 mol% of either being necessary to fully stabilize the cubic fluorite-structure phase at 1200°C. The two binary ordered phases, Zr3Yb4O12 and Zr3Y4O12, are completely miscible at 1200°C. These were the only binary or ternary phases detected. The ionic conductivities of ternary specimens in this system were measured using the complex impedance analysis technique. For a given level of total dopant, the substitution of Yb2O3 for Y2O3 gives only minor increases in specimen conductivity.  相似文献   

20.
The eutectic composition between Y4Al2O9 and Y2O3 was determined using electron probe microanalysis (EPMA) on directionally solidified specimens with hypo- and hypereutectic compositions. The microstructures of the specimens as a function of composition differ considerably with small deviation from the eutectic composition (70.5 mol% Y2O3 and 29.5 mol% Al2O3). Based on the current results and other published data, the pseudobinary system between Al2O3 and Y2O3 is revised.  相似文献   

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