交叉耦合盒式结构微带带通滤波器设计

设计了一种交叉耦合盒式结构微带带通滤波器。采用耦合矩阵方法对交叉耦合盒式结构带通滤波器频率响应特性进行了分析,并且在此基础上研制了一种基于E型双模谐振器的非对称响应带通滤波器。滤波器中心频率为6.4 GHz,带宽为0.8 GHz,最小带内插损为1.9 dB,两个传输零点分别位于4.5 GHz 和7.6 GHz,上下阻带抑制度分别大于35dB、47dB。滤波器有效尺寸约为0.34λg *0.43λg。该滤波器具有结构紧凑、带外抑制度高、选择性高的优点。     

基于DGS 结构的微带岔线型带通滤波器设计

本文介绍了一种基于缺陷地结构(DGS)的微带岔线型宽带带通滤波器的设计过程。此滤波器以四分之一波长的开路枝节型带通滤波器为原型进行设计和改进,引入了微带岔线和DGS 结构,在增加通带带宽和阻带带宽的同时,使滤波器的带外谐波抑制和带内回波损耗得到了很大的改善。采用HFSS 三维场仿真软件进行S 参数的仿真,从仿真结果可 以看出,所设计的带通滤波器中心频率为11.5GHz,其3dB 相对带宽大于50%,带内插损小于0.3dB。此外,在1-6GHz的第一阻带内,滤波器的带外抑制大于20dB,最大抑制度为52dB;在15-24GHz 的第二阻带内滤波器的带外抑制大于20dB,最大抑制度为46dB。整个滤波器尺寸仅为12mm × 16mm。     

半集总同轴腔体带通滤波器设计

提出了一种半集总同轴腔体带通滤波器结构,并设计了一个中心频率为2.35 GHz,相对带宽为4.25%的半集总同轴腔体带通滤波器。仿真结果表明,该滤波器通带内反射损耗小于–18 dB,插入损耗小于0.08 dB,在2.2GHz和2.5 GHz处带外抑制均小于–40 dB。该滤波器插入损耗低,结构简单紧凑,在移动通信系统中有一定的应用价值。     

具有良好选择性及带外抑制的小型低通滤波器

本文提出了一种具有良好选择性以及宽带带外抑制的小型低通滤波器结构。滤波器的每一级由一段微带线和交指电容构成。基于对每一级结构的分析,我们可以确定通带的范围。为了进一步提高带外的抑制性,对单级滤波器进行了周期性的级联。通过产生多个带外衰减极点来实现带外的宽带抑制。此滤波器3dB 截止频率3.67GHz,带内插损-0.9dB,带内回波损耗低于-13dB。通带到阻带的选择度为160dB/GHz。带外抑制从3.8GHz 到13.1GHz 低于-20dB。     

基于T型枝节加载SIR的双频微带滤波器的设计

针对当前通信系统需要滤波器支持多频段、小型化和高性能等要求,提出了一种基于T型枝节加载SIR的频率独立可控双频微带滤波器结构。针对该谐振器,利用提出的特殊电耦合结构实现滤波器的小型化,并引入零度馈电结构构造传输零点来改善阻带抑制,最终得到覆盖WLAN 2.4 GHz和WLAN 5.2 GHz两个频段且占用尺寸仅为16.5 mm×21.7 mm的双频微带带通滤波器。由仿真结果显示,两个通带的中心频率分别为2.45 GHz和5.2 GHz,带内最小插入损耗分别为0.35 dB和0.47 dB,带内最小回波损耗分别为-44 dB和-34.8 dB,3 dB相对带宽分别为28.9%和11.3%,阻带抑制也因引入三个传输零点而大大改善。该滤波器结构整体尺寸小、插损低、频带宽且带外抑制特性好,具有一定的实际应用价值。     

C波段超宽带微型LTCC带通滤波器设计

基于低温共烧陶瓷(Low temperature co-fired ceramic,LTCC)技术设计了一款C波段超宽带、高抑制的带通滤波器,并通过LTCC技术对滤波器进行加工制作,满足了小体积、高性能、密集封装的应用需求。滤波器整体上采用了低通滤波器与高通滤波器串联的结构实现超宽通带,并引入传输零点来增加带外抑制,采用垂直叉指电容和双层螺旋电感来减少滤波器体积。最终实现的滤波器通带的中心频率为5.3 GHz,带宽为3 GHz,通带内插损小于0.8 dB,在DC～3 GHz处抑制达到了36 dB,在8～14 GHz处抑制达到了35 dB,通带回波损耗为12 dB。滤波器体积为：1.8 mm×1.0 mm×0.7 mm。     

基于PBG结构的双模带通滤波器设计及理论分析

本文应用传输线理论对PBG结构带通滤波器进行分析,并在此基础上仿真、设计一种新颖的K波段的双模带通滤波器.光子带隙结构具有独特的带阻特性,对高次模具有很好的抑制特性,能够提高微波电路系统的抗干扰能力.由于PBG的慢波特性,使得带通滤波器的结构尺寸大为减小,符合系统小型化的要求.在此基础上,就这种结构应用Ensemble软件进行优化仿真.最后制作出滤波器并进行了测试.仿真结果与实验结果吻合很好,插入损耗为-4.5dB,通带中心频率为25.2GHz,-3dB带宽为1.8GHz,相对带宽7%.     

基于S-DMS 的谐波抑制双通带滤波器

在传统微带线结构基础上利用阶跃阻抗并联短截线SISS（Step-Impedance Shunt Stubs）的带阻及慢波抑制特性,提出了一种新的基于SISS 缺陷微带线结构S-DMS（SISS Defected Microstrip Structure）,利用该结构设计制作了具有谐波抑制功能的双通带滤波器。采用HFSS 进行仿真优化,在此基础上进行了实物加工,获得了通带中心频率为3.5 GHz,8.5 GHz,插入损耗分别为0.45 dB,2.7 dB,3 dB 带宽分别是550 MHz,260 MHz,带外最大抑制小于-40 dB 的实测结果,与仿真结果相当吻 合。结果表明该双通带滤波器具有良好的谐波抑制能力、小带内衰减和宽且深的阻带特性。     

一种基于DGS和EBG混合结构的毫米波滤波器设计

设计了一款可应用于毫米波频段（22.5～29.5 GHz）的小型化、高性能带通滤波器。首先利用羊角型DGS结构的谐振特性,在基片集成波导（Substrate integrated waveguide,SIW）的高通通带内产生阻带和低通特性;之后在滤波器输入微带线上耦合U型电磁带隙结构（Electromagnetic band gap,EBG）,利用该结构产生的两传输零点之间的带宽可以调整的特性,来保证滤波器通带带宽及提供高带外抑制;最后利用电磁仿真软件HFSS 13.0对滤波器进行仿真与优化。实测结果表明,该滤波器整体尺寸为10 mm×5 mm,中心频率为26 GHz,3 dB截止频率分别为22.1 GHz和29.3 GHz,带宽为7.2 GHz,相对带宽达到了28%,滤波器的插入损耗为1 dB,回波损耗优于15 dB,上、下边带带外抑制均优于25 dB,可应用于毫米波频段无线通信系统中。     

宽阻带SIW滤波器设计

本文设计了一款哑铃槽加载的宽阻带四阶介质基片集成波导(SIW)滤波器。该滤波器通过直角耦合结构来引入传输零点,从而提高带外抑制。同时在SIW上面金属层刻蚀哑铃槽缺陷地结构,抑制高次模耦合传输,优化滤波器阻带性能。利用HFSS软件优化谐振腔尺寸、耦合窗大小和哑铃槽位置、尺寸以获得良好的性能。该滤波器的中心频率为20GHz,仿真结果显示通带内回波损耗优于20dB,21GHz-33GHz频段内带外抑制优于40dB,33GHz-45GHz频段内带外抑制优于21dB,实现了较宽的阻带。加工并测试了该滤波器,实测结果与仿真结果具有一定的吻合度。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks