Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure

This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm². To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.     

Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctions

A new integrated PIN/JFET using an original three-layer GalnAs structure has been developed in order to optimise both devices separately. Thanks to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is ? 33.7 dBm for a 10?9 bit error rate at 140 Mbit/s.     

Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layerstructure for a monolithically planar integrated receiver OEIC

A novel planar concept for the monolithic integration of a p-i-n photodiode (PD) and a junction field-effect transistor (JFET) is described. In an otherwise optimized InGaAs/InP PD layer sequence, grown by metalorganic vapor-phase epitaxy (MOVPE), a local Si- and Be-ion implantation has been performed to realize a thin n⁺-doped channel layer and a buried p-layer for the JFET. JFETs (1.6×290 μm) have a maximum transconductance of 100 mS/mm and a cutoff frequency of 7 GHz. PDs with 64-μm diameter show a dark current of 1 nA at -10 V, a responsivity of 1.1 A/W, and a 3-dB bandwidth of 7.6 GHz. The PD-JFET combination exhibits a clear open eye pattern at 200 Mb/s. A receiver sensitivity of -35 dBm for a bit error rate of 10^-9 is estimated     

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace.The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements.The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission,which indicates that Zn was commendably diffused into InP layer as the acceptor.High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃ for 10 min.Furthermore,more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process.Based on the above Zn-diffusion technique,a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of-5 V and a high breakdown voltage of larger than 41 V (I ＜ 10 μA).In addition,a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.     

Impedance-matched optical link for C-band satellite applications

Optical transmitter and receiver modules with passive impedance-matching circuits have been designed, constructed, and tested. A direct current modulated InGaAs DFB laser, operating at 1.3 micron, and an InGaAs PIN photodiode were matched to 50 ohms with passive, mixed lumped and distributed element, matching circuits. A link-insertion loss of 21 dB with a 3 dB bandwidth of 900 MHz has been demonstrated. Through the use of higher-order matching circuits, link-insertion loss variations across the satellite downlink frequency band (3.6-4.2 GHz) have been kept below ±0.5 dB     

High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells

A long-wavelength optical modulator has been fabricated which makes use of an electroabsorption effect in multiple quantum wells (MQWs). Here, InGaAs/InAlAs MQWs are prepared in a PIN configuration using molecular beam epitaxy (MBE). The rise time of the detected pulse modulation signal has been measured at 190 ps. This response level has been attributed to the detecting system response and RC time constant, and not to such intrinsic effects as carrier lifetime.     

Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodes

In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 ?m and of 6 ?s have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.     

Monolithic integration of InGaAs/InP PIN PD with MISFET on stepless substrate

A low-dark-current (1?2 nA) InGaAs/InP single-heterostructure planar PIN PD was fabricated and integrated with an InP MISFET on stepless substrates. The characteristics of the PIN PD did not change with integration.     

Monolithically integrated InGaAs/InP PIN-JFET photoreceiver

A vertically integrated InGaAs/InP PIN-JFET has been fabricated, in which separate layers are used for the FET channel and PIN intrinsic region. The maximum transconductance was 170 mS/mm, which is the highest reported figure for an integrated structure, and the photodiode quantum efficiency was 64% at ?5 V and 1.53 ?m wavelength, without antireflection-coating.     

Highly miniaturised InP=InGaAs PIN MMIC switches using BCB-based multilayer technology

Fully integrated single-pole-double-throw and single-pole-triple-throw InP/InGaAs PIN switches have been designed and fabricated using a newly proposed BCB-based 3D MMIC technology. The chip sizes of the fabricated InP/InGaAs PIN switches, which show good and broadband RF characteristics, have been significantly reduced compared to those of conventional GaAs-based switches. The results indicate the potential of the proposed 3D MMIC technology for compact embedded MMIC applications.     

实用型5GHz带宽InGaAs／InP PIN光电探测器

设计并研制成功了实用型５ＧＨｚ带宽ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ光电探测器，介绍了限制探测器响应速度的主要因素，微波封装的理论依据，以及所研制器件频率响应的测试结果。     

InGaAs pin photodiode fabricated on semi-insulating InP substrate for monolithic integration

A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 × 10?6 A/cm2 at ?10 V in this material system. At the operating voltage of ?5 V, an external quantum efficiency of >90% at 1.3 ?m and >83% at 1.55 ?m, a rise time of <35 ps and an FWHM of <45 ps have been measured.     

Theoretical and numerical comparison between DMOS and trenchtechnologies for insulated gate bipolar transistors

An accurate and comprehensive comparison between DMOS and Trench technologies for Insulated Gate Bipolar Transistors (IGBT) is presented. The study is performed using extensive two-dimensional numerical simulations and fundamental physical modeling. Various phenomena such as the influence of the channel density on the forward voltage drop and the effect of the channel mobility degradation on the on-state characteristics have been the object of controversial studies. The analysis performed here describes rigorously these phenomena and accounts for new physical effects such as the channel length modulation and PIN diode carrier dynamics. It is concluded that at relatively high voltage and high current densities (>100 A/cm²) an optimally designed Trench IGBT results in significant theoretical advantages over its conventional DMOS variant, mainly due to an increased packing density, PIN diode effect, reduced latch-up current density and elimination of the JFET effect     

Monolithic InGaAs photodiode array illuminated through an integrated waveguide

A linear array of InGaAs PIN photodiodes has been fabricated which can be illuminated through a slab waveguide from the opposite side of the InP substrate via total reflection at a V-groove mirror. Absorption losses in the double-heterostructure waveguide are 2.5 dB/cm. The internal quantum efficiency of the photodiodes, including the mirror loss, is 87%, and an optical crosstalk between the diodes better than ?40 dB was measured.     

50 GHz InGaAs edge-coupled PIN photodetector

An edge-coupled PIN photodetector with an InGaAs absorber layer has been designed and fabricated. Values of bandwidth at 1530 nm, with and without bias, have been measured as 50 GHz and 20 GHz, respectively. The external quantum efficiency is as high as 40% using a standard 12 mu m radius lens-ended single-mode fibre.<>     

单片InGaAs／InP PIN PD阵列

文章简要地介绍了ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ ＰＤ阵列的制作现状及其应用和发展趋势。     

Balanced dual-detector receiver for optical heterodyne communication at Gbit/s rates

A balanced dual-detector receiver which requires low local-oscillator power has been designed and fabricated for optical heterodyne detection at 1·5 ?m wavelength and Gbit/s rates. The receiver consists of two InGaAs PIN photodiodes connected with opposite polarities to a high-impedance GaAs FET amplifier. Frequency response, noise suppression and noise spectrum measurements are reported.     

MOCVD生长的平面型InGaAs／InP PIN光电探测器件

讨论了采用MOCVD技术生长的平面型InGaAs/InPPIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜,大大提高了器件的量子效率,达到～96%,采用平面型结构有可能改善器件的稳定性和可靠性。     

High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode

There is a inherent tradeoff between the quantum efficiency and bandwidth of conventional PIN photodiodes. In the case of devices based on III-V semiconductors, an absorption region thickness of approximately 2 mu m is required to achieve quantum efficiencies greater than 80%, although this limits the transit-time-limited bandwidth to less than 15 GHz. It has recently been shown that a microcavity photodiode can circumvent this performance tradeoff and achieve both high quantum efficiency and large bandwidths. The fabrication of a microcavity PIN photodiode with a high quantum efficiency near 1.55 mu m is described. An external quantum efficiency of 82% at 1480 nm has been achieved with an InGaAs absorption layer only 2000 AA thick embedded in a resonant cavity grown by metal organic vapor phase epitaxy (MOVPE).<>     

Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n⁺ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.