共查询到17条相似文献,搜索用时 62 毫秒
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利用传输矩阵法得到了垂直腔面发射激光器(VCSELs)内部光场应满足的本征方程,并通过打靶法对方程进行了求解。数值结果表明,该方法具有求解速度快和精度高的优点。用该方法模拟分析了有源区两侧GaAs垒层的厚度及spacer层中的Al组份对阈值增益、光限制因子和共振波长的影响。 相似文献
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阈值载流子浓度及输出波长是研究耦合垂直腔面发射激光器的一个重要方面.本文利用边界条件.结合激光器中间DBRS层的耦合传输矩阵.推导出了双波长激射时的阈值载流子浓度,以及中间DBR层数对输出波长的影响. 相似文献
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为了改善大功率垂直腔面发射激光器(VCSEL)的模式特性,在GaAs衬底上采用限制扩散湿法刻蚀技术制作出了不同曲率半径的微透镜,与P型和N型分布式布拉格反射镜(DBR)构成复合腔结构,可以对腔内模式进行选择.有源区采用新型的发射波长为980 nm的InGaAs/GaAs应变量子阱,包括9对In0.2Ga0.8As(6 nm)/Ga0.18As.82P(8 nm)量子阱,有源区直径100μm,微透镜直径300 μm,曲率半径959.81μm,表面粗糙度13 nm.室温下,器件连续输出功率大于180 mW,阈值电流200 mA,远场发散角半角宽度分别为7.8°和8.4°,并且与没有微透镜的垂直腔而发射激光器输出特性进行了比较. 相似文献
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SUN Yan-fang LI Te NING Yong-qiang QIN Li YAN Chang-ling SHAN Xiao-nan LU Guo-guang HE Chun-feng WANG Chao LIU Yun TAO Ge-tao LIU Jun WANG Li-jun 《光机电信息》2005,(4):17-23
The development and application of vertical-cavity surface-emitting lasers (VCSELs) are summarized in this paper. The emphasis is focused on the high power single and 2-D arrays bottom-emitting VCSELs with a wavelength of 980nm. A distinguished device performance is achieved. The maximum continuous-wave (CW) output power of large aperture single devices with active diameters up to 500μm is as high as 1.95W at room temperature, which is to our knowledge the highest value reported for a single device. Size dependence of the output power, the threshold current and the differential resistance are discussed. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.32W at room temperature. 相似文献
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T. M. Calvert J. D. Lambkin B. Corbett A. F. Phillips G. M. Crean 《Materials Science in Semiconductor Processing》2000,3(5-6)
Red vertical cavity lasers (VCSELs) are ideally suited as optical sources for plastic optical fibre networks. These networks will form the communication backbone of future automobiles and aircraft replacing the current copper networks. However VCSELs at these wavelengths are difficult to realise due to the lower refractive index offsets and unsuitable band structure alignments. The Esprit BREDSELS project has addressed the design, growth and fabrication of low threshold red VCSELs. This paper reports the fabrication of record low threshold (200 μA at 20°C) VCSELs at a wavelength of 665 nm. This device performance has been achieved through the use of selective oxidation techniques. The devices operate CW to 50°C. The trade off between low threshold and high power will be discussed. 相似文献
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为了提高脊波导结构的超辐射二极管(SLD)与单模光纤的耦合功率,研究了有源区与脊之间的残留层和上光限制层的厚度对SLD输出功率和近场光斑的影响. 考虑了注入载流子横向分布的不均匀,较准确地计算了模式增益. 结果表明,通过对残留层和上光限制层厚度的优化,可以有效提高SLD与单模光纤的耦合功率. 相似文献
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Maxwell鱼眼微球透镜在光纤系统中的耦合效率极限 总被引:1,自引:0,他引:1
本文用梯度折射率(GRIN)介质的光线理论分析了Maxwell鱼眼微球透镜光学耦合系统的耦合效率,得到了单、双透镜耦合系统耦合效率极限的计算公式。严格的数值计算表明,Maxwell鱼眼微球透镜耦合系统的耦合效率远高于普通的均匀介质球光学耦合系统。 相似文献