Composition of self-assembled quantum dots

Abstract

Semiconductor quantum dot (QD) nanostructures have attracted increased interest in recent years because of their electronic and optical properties. A common way to make QDs is to grow a thin layer of material on a substrate with a different lattice constant. The strain between the layers induces the formation of three-dimensional islands. The electronic properties of the islands are mainly determined by their size, shape and composition. While the size and shape of QDs have been the focus of many studies, only recently has their composition been investigated. Experimental studies of the composition of QDs are reviewed and compared with the available theoretical models of QD growth. It is found that no model in the literature can satisfactorily predict QD size, shape and composition. Experimental results from studies of QDs grown under similar conditions vary substantially. Most authors, however, agree that the average composition of the QDs is different from the nominal composition of the deposited material. The composition is also found to vary from top to bottom of the QDs, which is found to have a significant influence on the electronic properties.     

Stacked layers of InAs self-assembled quantum dots

Carrier injection and subsequent radiative recombination in two vertically stacked (but electronically only weakly coupled) layers of InAs/GaAs self-assembled quantum dots (SADs) embedded in the intrinsic region of a double hetero p-i-n structure was investigated by electroluminescence (EL) spectroscopy in the temperature range from 20 to 300 K. In such structures the filling of the SADs by charge carriers strongly depends not only on the applied voltage, but also on the relative position of the SAD layers within the i-region and on the temperature. The experimental data provide evidence of the dominant role of hole dynamics in the recombination processes in the stacks of SADs. The difference of the electronic structure of the SADs in the top and bottom layers is reflected by independent contributions of the two quantum dot layers to the electroluminescence from the SADs. The possibility to tune the emission spectra by varying the thickness of the GaAs layer between neighbouring SAD layers and by using the indium flush technique is demonstrated.     

Ferromagnetic self-assembled quantum dots on semiconductor nanowires

Ferromagnetic self-assembled alpha-MnAs quantum dots (QD) were grown epitaxially on metal catalyst-grown InAs nanowires (NW) by chemical vapor deposition. Magnetic force microscopy measurements demonstrated that the QDs are stable, single-domain ferromagnets with T(c) values of approximately 310 K. Single QD switching was demonstrated at fields as low as 60 Oe. The hybrid ferromagnetic/semiconductor QD/NW properties provide a promising basis for the development of nanowire spin-valves and magnetic memory devices.     

Characteristics of III-nitride photodiodes with self-assembled quantum dots

In this work, it has been demonstrated that metal–semiconductor–metal (MSM) photodiodes (PDs) with InGaN self-assembled quantum dots (QDs) were fabricated and compared with conventional InGaN MSM photodiodes. The scanning near-field optical microscope (SNOM) results revealed that such InGaN nanostructures could have better absorption for the near-field light with the wavelength of 457–514 nm. It was found that the InGaN QD photodiode with lower dark current can operate in the normal incidence mode; we could achieve a much larger photocurrent to dark current contrast ratio from MSM photodiodes with nanoscale InGaN quantum dots. It was also found that the measured responsivity of MSM photodiodes with QDs and without QDs approximated to the same in the range of 390–460 nm. Furthermore, the photodiodes with QDs showed higher spectral response than that of the photodiodes without QDs at wavelengths < 350 nm and > 480 nm.     

Optically-induced charge storage in self-assembled InAs quantum dots

We present results on spectrally resolved photo-resistance studies of optically-induced charge storage effects in self-organized InAs quantum dots (QDs). The stored charge can be detected and erased electrically. The investigated structure designed for electron or hole storage in the QDs consists of a modulation doped two-dimensional channel which was grown on top of a layer of InAs QDs, separated by an asymmetric tunnel barrier. Our results show that optical QD charging with spectral resolution provides information on the charging dynamics and on the quantity and spectral dependence of stored charges in the QDs. This is a novel technique by which QD excitation spectra can be studied. Spectrally resolved storage effect measurements on electrons as well as on holes allowed to investigate thermal redistribution of carriers in the quantum dot layer. It was found that only at low temperatures carriers can be stored selectively over long time scales in the InAs QDs. The charge storage effect is observable for several hours at temperatures up to 170 K, for several seconds up to 250 K due to an increase in thermal emission of stored charges.     

Transport and photodetection in self-assembled semiconductor quantum dots

A great step forward in science and technology was made when it was discovered that lattice mismatch can be used to grow highly ordered, artificial atom-like structures called self-assembled quantum dots. Several groups have in the meantime successfully demonstrated useful infrared photodetection devices which are based on this technology. The new physics is fascinating, and there is no doubt that many new applications will be found when we have developed a better understanding of the underlying physical processes, and in particular when we have learned how to integrate the exciting new developments made in nanoscopic addressing and molecular self-assembly methods with semiconducting dots. In this paper we examine the scientific and technical questions encountered in current state of the art infrared detector technology and suggest ways of overcoming these difficulties. Promoting simple physical pictures, we focus in particular on the problem of high temperature detector operation and discuss the origin of dark current, noise, and photoresponse.     

Experiments and modeling of alloying in self-assembled quantum dots

We review the recent advances in the experimental and theoretical investigation of alloy distribution in semiconductor quantum dots (QDs). X-ray diffraction analysis, as well as wet chemical etching, represent two powerful techniques that are able to measure the alloy distribution inside the dots. From a theoretical point of view, determination of the alloy distribution follows from consideration of the thermodynamic quantities involved in the formation and stability of the QD: strain energy, surface energy, internal energy and entropy. Starting from the alloy distribution, the investigation of its role in influencing the electronic and optical properties of QDs is possible. Tight binding and ab initio calculation show the band structure of non-uniform alloyed Ge/Si and InAs/GaAs quantum dots. While for Ge/Si the indirect bandgap does not offer a strong photoluminescence spectra, direct-bandgap materials offer intense light emission, including the range for telecom applications (1.77–1.37 μm). Control of alloying inside the QDs allows for the tailoring of their band structure and photoluminescence spectra, where high alloy gradients induce a blue-shift of the spectra, compared to a more uniform composition.     

内嵌InAs量子点的场效应晶体管特性研究

研究了内嵌InAs量子点的异质结场效应晶体管在室温和低温下的电学特性,获得了量子点影响下器件的输出特性曲线。在室温下,通过分别测试在近红外光照和量子点充电条件下器件的Ⅰ-Ⅴ特性,证明了量子点通过类似纳米悬浮栅的作用,对邻近沟道的二维电子气施加影响。在低温下观察到器件漏电流出现负微分电导现象。这一现象可由2DEG和量子点之间的共振隧穿来解释。这些结果提供了一种新的操作传统场效应晶体管的方法,并有望制成新型量子点存储器。     

Electro-elastic tuning of single particles in individual self-assembled quantum dots

We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (≈-0.22 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 μeV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.     

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping

Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.     

Semiconductor self-assembled quantum dots: present status and future trends

Progress in controlling the size, shape, and composition of quantum dots (QDs) as well as their positioning will be crucial to further advances in the fields of quantum information and device applications. The growth of QDs into lattices using controlled positioning of the QD nucleation centers is a possible method. QD positioning is also much needed for further development of QD microcavities and photonic-crystal based devices that are used for quantum information applications. This article discusses the prospects for progress in these fields that may be realized if a better control over the positioning and self-positioning of quantum dots is achieved.     

Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD

Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures.     

Electrical control of the exciton-biexciton splitting in self-assembled InGaAs quantum dots

The authors demonstrate how lateral electric fields can be used to precisely control the exciton-biexciton splitting in InGaAs quantum dots. By defining split-gate electrodes on the sample surface, optical studies show how the exciton transition can be tuned into resonance with the biexciton by exploiting the characteristically dissimilar DC Stark shifts. The results are compared to model calculations of the relative energies of the exciton and biexciton, demonstrating that the tuning can be traced to a dominance of hole-hole repulsion in the presence of a lateral field. Cascaded decay of the exciton-biexciton system enables the generation of entangled photon pairs without the need to suppress the fine structure splitting of the exciton. Our results demonstrate how the exciton-biexciton system can be electrically controlled.     

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals.     

Enhanced absorption and electro-optic Pockels effect of electrostatically self-assembled CdSe quantum dots

The spectrum and electro-optic properties of CdSe quantum dots are studied. Spectrum wavelength shifts that are due to the quantum size effect and to the electro-optic Stark effect are investigated. It is found that CdSe quantum dot-polymer composites formed by an electrostatic self-assembly (ESA) technique exhibit high internal electric fields. Using the second-order perturbation theory of the 1s-1s energy shift (Stark effect), we estimate the internal field of the ESA film to be as high as 2.6 x 10(8) V/m. This value results in a much higher absorption coefficient and electro-optic coefficients for ESA films than for their bulk crystal counterparts or for spin-coated film samples. The relationships among unusual spectra, film structure, and high electro-optic response are analyzed. These results are useful both for understanding the physical mechanisms of semiconductor quantum dots and for developing high-performance photonic devices.     

Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

We have used the new technique of high resolution (Laplace) transient spectroscopy to examine the electronic states of ensembles of self-assembled quantum dots of InAs in a GaAs matrix. These have been produced by solid source MBE. We have monitored the s and p state occupancies as a function of time under thermal excitation over a range of temperatures after electrons have been captured by the quantum dots with different Fermi level positions. This can provide more information about the interaction of the dots with the host matrix than is possible with optical techniques and gives new fundamental insights into how such dots may operate in electronic devices such as memory and sensors. The increase in resolution of Laplace transient spectroscopy over conventional experiments reveals quite specific rates of carrier loss which we attribute to tunnelling at low temperatures and a combination of thermal emission and tunnelling as the temperature is increased.     

Ultrafast spin dynamics in colloidal ZnO quantum dots

Time-resolved Faraday rotation measurements in the ultraviolet have been performed to reveal the ultrafast spin dynamics of electrons in colloidal ZnO quantum dots. Oscillating Faraday rotation signals are detected at frequencies corresponding to an effective g factor of g = 1.96. Biexponential oscillation decay is observed that is due to (i) rapid depopulation of the fundamental exciton (tau = 250 ps) and (ii) slow electron spin dephasing ( T 2 = 1.2 ns) within a metastable state formed by hole-trapping at the quantum dot surface.     

Optical properties and carrier dynamics of self-assembled GaN/Al(0.11)Ga(0.89)N quantum dots

GaN quantum dots were grown on an Al(0.11)Ga(0.89)N buffer layer by using flow rate modulation epitaxy. The Stranski-Krastanov growth mode was identified by an atomic force microscopy study. The thickness of the wetting layer is about 7.2 monolayers. The temperature dependent photoluminescence studies showed that at low temperature the localization energy, which accounts for de-trapping of excitons, decreases with the reducing dot size. The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V(N)) state of the Al(0.11)Ga(0.89)N barrier layer. The activation energy decreases with reducing dot size.     

Studying the formation of self-assembled (In,Mn)As quantum dots

Self-assembled quantum dots (SQDs) based on (In,Mn)As solid solutions have been synthesized by molecular beam epitaxy on GaAs(100) substrates. Examination of the surface morphology of samples by the method of atomic force microscopy showed that the presence of Mn influences the surface density and dimensions of SQDs. The effect of a preliminarily deposited sublayer of Mn atoms on the properties of subsequently grown layers with (In,Mn)As quantum dots has been studied.     

Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots

We study the ground state of a hole confined in two vertically coupled GeSi/Si quantum dots as a function of the interdot distance and dot composition within the sp(3) tight-binding approach. Both quantum-mechanical tunneling and inhomogeneous strain distribution are included. For pure Ge dots, the strain is found to have two effects on the hole binding energy: (i)?reduction of the binding energy below the value of the single dot with increasing dot separation and (ii)?molecular bond breaking for intermediate interdot distances and posterior bond restoration at larger distance. Both effects are smeared upon Ge-Si intermixing.