Structural and dielectric properties of Bi doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ceramics

The dielectric properties of 0.1–15% mol bismuth doped Ba_0.6Sr_0.4TiO₃ (BST) ceramics have been investigated systematically. The solubility limit of bismuth is determined as about 10 mol% by means of both X-ray diffraction and scanning electron microscopy, which is further verified by the fact that the lattice constant of the samples above 10 mol% is almost invariable. The temperature dependence of the dielectric permittivity suggest that the ferroelectric behavior transit to relaxor ferroelectric type when impurity concentration reaches 5 mol%, and further to relaxor behavior for samples above 10 mol% Bi content, which is verified by the absence of a hysteresis loop. Thermal expansion results show differences between 5 and 10 mol% doped samples. Dielectric tunability at room temperature decreases with bismuth content increasing. The variation of properties was attributed to the impurity induced polar regions and former long-order structure.     

Fabrication and characterization of epitaxial Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript>/LaNiO<Subscript>3 </Subscript>heterostructures

Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The θ–2θ scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans (ϕ) on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance–voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current–voltage curve shows that the leakage current is 2.41 × 10⁻⁷ A/cm² under an applied voltage of 2 V.     

Electromagnetic properties of low-temperature-sintered (Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>)TiO<Subscript>3</Subscript>/NiCuZn composites

Dense (Ba_0.6Sr_0.4)TiO₃/Ni_0.37Cu_0.20Zn_0.43Fe_1.92O_3.88 (BST/NiCuZn) composites were prepared by the conventional solid-state reaction method and sintered at 1,050°C. The phase composition and surface morphology of the composites were investigated using XRD and SEM, respectively. The dielectric and magnetic properties of the composites were also reported. In low frequency range the dielectric properties of the BST/NiCuZn composites show Maxwell–Wagner relaxation. In high frequency range the BST/NiCuZn composites possess high dielectric constants and permeabilities, which can be used in high-frequency communications for capacitor-inductor integrating devices such as electromagnetic interference filters and antennas.     

Electrical behavior of Y-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> thin films

Ba_0.6Sr_0.4TiO₃ (BST) and 1.5 at% Y-doped Ba_0.6Sr_0.4TiO₃ (Y-BST) thin films have been deposited on single-crystal (100) oriented LaAlO₃ substrates using pulsed-laser deposition technique (PLD), respectively. X-ray diffraction (XRD) scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases, but Y-BST thin films showed an enhanced crystallization effect. The dielectric properties of the pure and Y-BST thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the addition of Y as an acceptor doping is very effective to increase dielectric tunability, and to reduce leakage current of BST thin films. The figure-of-merit (FOM) factor value increases from 17.32 for BST to 25.84 for Y-BST under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a negative bias field of 300 kV/cm decreases from 2.45 × 10⁻⁴ A/cm² to 1.55 × 10⁻⁶ A/cm² by Y doping. The obtained results indicated that the Y-doped BST thin film is a promising candidate material for tunable microwave devices.     

Effect of annealing on leakage current characteristics of Pt/Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript>/Pt thin-film capacitors

The effect of annealing on leakage current characteristics of Pt/Ba_0.6Sr_0.4TiO₃/Pt ferroelectric thin-film capacitors was investigated at the temperature range from 273 K to 393 K. The results show that the depletion layer width of the as-deposited BST film is about 3–5 times greater than that of the annealed film. For as-deposited samples, the Schottky barrier height increases with increasing temperature and voltage. However, for annealed samples, the Schottky barrier height linearly decreases with increasing voltage and is almost independent upon temperature.     

Study on dielectric and tunable properties of Cr-doped Ba<Subscript>0</Subscript><Subscript>.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> thin films by rf sputtering

Ba_0.6Sr_0.4TiO₃ dielectric thin films doped by Cr(0, 1, 2.5, 5, 10 mol%) (BSTC) were prepared by radio frequency magnetron sputtering on Pt/Ti/SiO₂/Si substrates. The structure and morphology of the BSTC thin films were studied by atomic force microscopy and X-ray diffraction. The effect of Cr doping on the dielectric properties of BST thin films were analyzed. The results show that the dielectric loss of Cr doping BST thin films is lower than that undoped, and the tunability increased with Cr doping. The thin film doped with 5 mol% Cr has the best dielectric properties. The tunability, loss and figure of merit (FOM) at 1 MHz were 38.9%, 0.0183, and 21.3, respectively.     

Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> ferroelectric nanofilms on silicon buffered with a TiO<Subscript>2</Subscript> layer

Polycrystalline, 50- to 70-nm-thick barium strontium titanate films of composition Ba_0.8Sr_0.2TiO₃ have been grown on single-crystal silicon substrates by rf ion-beam sputtering. We have determined their structure and composition and detected impurities at the film/substrate interface in the form of titanium silicide islands. The deposition of a 4- to 6-nm-thick TiO₂ buffer layer onto Si by ion-beam sputtering before ferroelectric film growth is shown to prevent uncontrolled formation of impurities near the interface. The buffered heterostructures possess high thermal stability.     

Fabrication of conductive SrRuO<Subscript>3</Subscript> thin film and Ba<Subscript>0.60</Subscript>Sr<Subscript>0.40</Subscript>TiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> bilayer films on MgO substrate

Conductive SrRuO₃ (SRO) thin films have been grown on (100) MgO substrates by pulsed laser deposition (PLD) technique. Effects of oxygen pressure and deposition temperature on the orientation of SRO thin film were investigated. X-ray diffraction (XRD) θ/2θ patterns and the temperature dependent resistivity measurements indicated that oxygen pressure of 30 Pa and deposition temperature of 700 °C were the optimized deposition parameters. A parallel-plate capacitor structure was prepared with the SRO films deposited under optimized condition as an electrode layer and Ba_0.60Sr_0.40TiO₃ (BST) thin film as the dielectric layer. XRD Φ scans indicated a epitaxial relationship between BST and SRO on MgO substrate. The dielectric constant and loss tangent measured at 10 kHz and 300 K was 427 and 0.099 under 0 V bias, and 215 and 0.062 under 8 V bias, respectively. A tunability of 49.6% has been achieved with DC bias as low as 8 V. The C–V hysteresis curve and the P–E hysteresis loop suggested that the BST films epitaxially grown on SRO/MgO have ferroelectricity at room temperature. The induced ferroelectricity was believed to originate from the compressive strain between the epitaxial BST and SRO thin films. These results show the potential application of the BST/SRO heterostructures in microelectronic devices.     

Investigation of Ba<Subscript>2-x</Subscript>Sr<Subscript>x</Subscript>TiO<Subscript>4</Subscript>: Structural aspects and dielectric properties

Investigation of solid solution of barium-strontium orthotitanates of the type, Ba_2-x Sr _x TiO₄ (0 ≤x≤ 2), show that pure phases exist only for the end members, Ba₂TiO₄ and Sr₂TiO₄, crystallizing in the β-K₂SO₄ and K₂NiF₄ structures, respectively. The intermediate compositions (till≥ 1) lead to a biphasic mixture of two Ba₂TiO₄-type phases (probably through a spinodal decomposition) with decreasing lattice parameters, indicating Sr-substitution in both the phases. Forx > 1, Sr₂TiO₄ along with a secondary phase is obtained. The dielectric constant and dielectric loss were found to decrease with Sr substitution till the nominal composition ofx = 1. However, pure Sr₂TiO₄ shows higher dielectric constant compared to the solid solution composition. Sr₂TiO₄ shows very high temperature stability of the dielectric constant.     

Structural,dielectric and impedance study of Bi and Li co-substituted Ba<Subscript>0.50</Subscript>Sr<Subscript>0.50</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable microwave devices applications

In this article, the structural, dielectric and electrical properties of Bi and Li co-substituted (Ba, Sr) site in Ba_0.50Sr_0.50TiO₃ ceramics are presented. Four different compositions of Ba_0.50Sr_0.50TiO₃, (Ba_0.50Sr_0.50)_0.98(Bi, Li)_0.02TiO₃, (Ba_0.50Sr_0.50)_0.96(Bi, Li)_0.04TiO_3, and (Ba_0.50Sr_0.50)_0.92(Bi, Li)_0.08TiO₃ were synthesized using solid-state reaction with microwave heating of starting materials. Phase detection for all samples has been examined by XRD along with Rietveld refinement analyses, and the results show the formation of single phase without observation of any secondary phase. However, a decrease in crystallite size, lattice parameters, and unit cell volume has been observed with the increase of Bi and Li concentration. A Dense microstructure with different grains sizes and shapes has been obtained by scanning electron microscopy. Impedance spectroscopy in the temperature range of 30–300 °C and frequency range of 60 Hz–1 MHz has been used to study the dielectric properties. The result shows that the Bi and Li co-substituted Ba_0.5Sr_0.5TiO₃ ceramics exhibit very interesting features, such as enhanced dielectric constant with low loss which make it suitable for microwave tunable devices applications. An electric impedance analysis was carried out at different temperatures namely (400, 450, 500, and 550 °C). A single semicircular arc with single relaxation process has been observed in all studied samples which suggest that the grains contribute to the total resistance in these materials. The activation energy was obtained from the impedance analysis using Arrhenius plot of grain conductivity.     

Crystallization and electrical properties of Ba<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>TiO<Subscript>3</Subscript> thin films on SrRuO<Subscript>3</Subscript>/Pt hybrid bottom electrode

Ba_0.7Sr_0.3TiO₃ (BST) thin films were deposited on Pt and SrRuO₃(SRO)/Pt hybrid bottom electrodes by radio frequency magnetron sputtering. X-ray analysis indicated that both films were polycrystalline. Dielectric measurements showed that the films on SRO/Pt hybrid bottom electrode had lower dielectric constant and loss than the films on single Pt and the dielectric properties were frequency-independent. The leakage current density of Ba_0.7Sr_0.3TiO₃ thin films on hybrid bottom electrode was also lower. Leakage mechanism investigations showed that the contact between the electrode-film interfaces of thin films on SRO/Pt hybrid bottom electrode was ohmic. Based on the results, the effects of SRO/Pt hybrid bottom electrode on the crystallization and electrical properties of BST thin films were discussed.     

Characterization of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> prepared by low temperature chloride aqueous synthesis

Ba_0.9Sr_0.1TiO₃ powder was processed at 80°C by reacting Ti sol in aqueous solutions that contained BaCl₂, SrCl₂ and NaOH at atmospheric pressure. Well-crystallized, spherical, nanosizes powders were formed by this method. The powders were found to have a cubic structure, which was retained even after heating at 900°C. Sintering at 1400°C, led to the formation of a tetragonal structure with a secondary phase of Ba₆Ti₁₇O₄₀. Abrupt grain growth was observed at 1400°C. The electrical response of the sample sintered at 1400°C has three electrically different regions. Each region of the sample is represented by different RC element. Element 1 (R ₁ C ₁) is the most resistive and its capacitance ishigh (0.5 nFcm⁻¹) indicating a thin region, probably the grain boundary. Element 2 (R ₂ C ₂) shows a smaller resistance value compared to element 1. The capacitance value of element 2 is temperature-dependent and displays a Curie–Weiss behaviour, indicative of a ferroelectric material above T _c. The lower capacitance of C ₂ (15 pFcm⁻¹) indicates that it is a much thicker region than element 1 and can be assigned as a ferroelectric bulk region. Element 3 is probably an electrode effect.     

Phase,microstructural characterization and dielectric properties of Ca-substituted Sr<Subscript>5</Subscript>Nb<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics

The effect of Ca substitution for Sr on the phase, microstructure and microwave dielectric properties of the Sr_5−x Ca _x Nb₄TiO₁₇ composition series was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), an LCR meter, and vector network analyzer. Below 1450 °C, Sr_5−x Ca _x Nb₄TiO₁₇ (x = 1, 2, 3, or 4) compositions formed single-phase Sr₄CaNb₄TiO₁₇, Sr₃Ca₂Nb₄TiO₁₇, Sr₂Ca₃Nb₄TiO₁₇, and SrCa₄Nb₄TiO₁₇ ceramics, respectively. At x = 0 and 5, Sr₅Nb₄TiO₁₇ and Ca₅Nb₄TiO₁₇ formed, but along with Sr₂Nb₂O₇ (at x = 0) and CaNbO₃ and CaNb₂O₆ (at x = 5) secondary phases. Above 1450 °C, all the compositions formed two-phase ceramics. At low frequencies, a phase transition was observed in the composition Sr₅Nb₄TiO₁₇. The substitution of Ca for Sr enabled processing of highly dense Sr₂Ca₃Nb₄TiO₁₇, with ε_r ~ 53.4, τ_f ~ −6.5 ppm/°C and Q _u  × f _o  ~ 1166 GHz. Further investigations are required to improve the quality factor of these ceramics for possible microwave applications.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.     

Synthesis of Ba<Subscript>3</Subscript>ZnNb<Subscript>2</Subscript>O<Subscript>9</Subscript>−Sr<Subscript>3</Subscript>ZnNb<Subscript>2</Subscript>O<Subscript>9</Subscript> solid solution and their dielectric properties

Oxides of the type, Ba_3-xSr_xZnNb₂O₉ (0 ≤x ≤3), were synthesized by the solid state route. Oxides calcined at 1000°C show single cubic phase for all the compositions. The cubic lattice parameter (a) decreases with increase in Sr concentration from 4.0938(2) forx = 0 to 4.0067(2) forx = 3. Scanning electron micrographs show maximum grain size for thex = 1 composition (∼ 2 μm) at 1200°C. Disks sintered at 1200°C show dielectric constant variation between 28 and 40 (at 500 kHz) for different values of x with the maximum dielectric constant atx = 1.     

Progress of (Sr,Ba) TiO<Subscript>3</Subscript> ferroelectric thin film and tunability

The fabrication method, technology route and structure performances of (Sr, Ba) TiO₃ (SBT) ferroelectric thin film have been summarized in this paper. The tunability of dielectric constant, dielectric loss and leakage current are the basic parameters of tunable microwave devices. The thin films of SBT with high properties could be fabricated by means of RF magnetron sputtering and sol- gel processing. The electrical performances of thin film material can be improved largely by dopants. Some problems are put forward to pay attention to this material research process.     

Enhancing the microwave dielectric properties of Sr<Subscript>2</Subscript>Ca<Subscript>3</Subscript>Ta<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics by Zr Substitution

The compositions in Sr₂Ca₃Ta₄Ti_1?xZr_xO₁₇ (0?≤?x?≤?0.12) series were designed and fabricated by solid state sintering method. All the compositions formed single phases and crystallized in an orthorhombic crystal structure. Zr substitution led to the enhancing of the microwave dielectric properties by tuning the τ_f value through zero and increased the Q_uf_o value from 12,540 to 14,970 GHz with a slight decrease in ε_r. In the present study, a good combination of ε_r ~?51, Q_uf_o ~?145,43 GHz and τ_f ~ 3 ppm/°C were obtained for Sr₂Ca₃Ta₄Ti_0.90Zr_0.1O₁₇ ceramic sintered at 1575 °C for 4 h.     

Fabrication and dielectric properties of textured Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ceramics by RTGG method

Grain-oriented Na_0.5Bi_0.5TiO₃-BaTiO₃ (NBTBT) ceramics were fabricated by reactive-templated grain growth using plate-like Bi_2.5Na_3.5Nb₅O₁₈ (BNN) as templates. The specimens are composed of NBTBT perovskite phase and BNN lay-structured phase. Textured ceramics have a brick-wall microstructure with strip-like grains aligning in the direction parallel to the casting plane and exhibit an {h00} preferred orientation. The texture fraction increases initially, and then decreases with increasing sintering temperature. The optimal sintering temperature is 1,185 °C where the texture fraction has a maximum value of 0.58 and d₃₃ is 98 pC/N. The textured NBTBT ceramics show evidence of relaxor ferroelectrics with diffuse phase transition and frequency dispersion because of composite biphasic structure.     

Fabrication and properties of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> composites

Composites in the form of precipitated powders, hybrid xerogels, and SiO₂ core/TiO₂ shell particles have been produced via hydrolysis of precursors (alkoxides and inorganic derivatives of titanium and silicon) and have been characterized by differential thermal analysis, X-ray diffraction, adsorption measurements, and macroelectrophoresis. The results demonstrate that heat treatment of the composites leads to crystallization of the titanium-containing component and, accordingly, reduces their specific surface area. Hydrothermal treatment enables the fabrication of materials in which TiO₂ nanocrystals are evenly distributed over an amorphous SiO₂ matrix.     

Relaxor behavior and ferroelectric properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-KNbO<Subscript>3</Subscript> lead-free ceramics

Lead-free ferroelectric ceramics of (1−x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃]-x KNbO₃(x = 0, 0.02, 0.04, and 0.06) were prepared by the conventional ceramic fabrication technique. The crystal structure, dielectric properties and P-E hysteresis loops were investigated. XRD data showed that all compositions could form pure perovskite structure. Temperature dependence of dielectric constant ε _r and dissipation factor tanδ measurement between room temperature and 500^∘C revealed that the compounds experience phase transitions that from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric in the range of x = 0–0.04. The frequency dependent dielectric constant showed these compounds were relaxor ferroelectric. At low frequency and high temperature, dielectric constant and dissipation factor increased sharply attributed to the superparaelectric clusters after the KNbO₃ doped.