Narrowband filters of new type for infra red spectral region

It is proposed new models of filters for infrared spectral range, such as metal-dielectric and thin film dielectric interference systems with high and low refraction factors. It is researched an influence of thickness and refraction factors of separate layers on spectral properties of such systems. Such structures can be used as infrared interference filters and for spectral devices calibration.     

SonicWALL深入中国市场

首个国际研发中心落户上海3月6日,新成立的SonicWALL上海研发中心在上海复旦科技园举行了隆重的揭幕仪式,上海市杨浦区领导等各方嘉宾莅临揭幕现场,祝贺SonicWALL第一个国际研发中心落户上海。新中心将促使SonicWALL进一步加强其全球软件开发能力,加快提供先进的解决方案以对付复杂和不断演化的安全威胁,从而进一步为     

非制冷红外热像仪批产质量过程控制探讨

本文介绍了非制冷红外热像仪产品批产过程的控制及关键技术,并提出了几条加强过程质量控制的有效措施.     

Kerr lens modelocked solid state laser in the red (639 nm)

The authors report Kerr lens modelocking of the Pr³⁺:YLF laser, operating at 639 nm, initiated through the use of a solid state saturable absorber, generating pulsewidths of 8 ps at repetition rates around 100 MHz     

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer

There is an emission peak at 494 nm in the electroluminescence (EL) of PVK [poly(n-vinylcarbazole)]: Eu(o-BBA)₃(phen) besides PVK exciton emission and Eu³⁺ characteristic emissions. Both the peaking at 494 nm emission and PVK emission influenced the color purity of red emission from Eu(o-BBA)₃(phen). In order to restrain these emissions and obtain high intensity red emission, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyljulolidy-9-enyl)-4Hpyran (DCJTB) and Eu(o-BBA)₃(phen) were co-doped in PVK solution and used as the active emission layer. The EL intensity of co-doped devices reached to 420 cd/m² at 20 V driving voltage. The chromaticity coordinates of EL was invariable (x = 0.55, y = 0.36) with the increase of driving voltage. For further improvement of EL intensity, organic–inorganic hybrid devices (ITO/active emission layer/ZnS/Al) were fabricated. The EL intensity was increased by a factor of 2.5 [(420 cd/m²)/(168 cd/m²)] when the Eu complex was doped with an efficient dye DCJTB, and by a factor of ≈4 [(650 cd/m²)/(168 cd/m²)] when in addition ZnS layer was deposited on such an emitting layer prior to evaporation of the Al cathode.     

Large- and small-signal modulation properties of red (670 nm) VCSELs

The large- and small-signal properties of red GaInP-AlGaInP triple QW VCSELs (670 nm) were measured. For the fundamental mode the small signal bandwidth is 2 GHz. Large-signal modulation up to 1.5 Gb/s is achievable with a prebias. The turn-on delay of unbiased devices is found to saturate due to heating from the average of the data signal.     

白蚁危害光缆接头原因的进一步分析

通过对现场资料的分析和对密封胶的理化特性检测以及野外白蚁蛀食试验，从白蚁生物学和生态学的角度揭示了白蚁蛀食光缆接头密封胶的原因，根据取得的成果，提出了白蚁防治的措施和建议。     

Integrating Diffie-Hellman key exchange into the digital signature algorithm (DSA)

The National Institute of Standards and Technology (NIST) has published a series of security standards under Federal Information Processing Standard (FIPS). Standard for key agreement is still missing in the current standards. Arazi proposed integrating Diffie-Hellman (DH) key exchange into the Digital Signature Algorithm (DSA). However, the protocol was attacked by Nyberg et al. We propose three different protocols that securely integrate DH key exchange into DSA for authenticated key distribution.     

Investigation into socketed CDM (SDM) tester parasitics

The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly impacts the SDM failure threshold voltage levels and may lead to miscorrelation and non-reproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides a 10–20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.     

Thermal characteristics of deep red (0.77 μm) vertical-cavitysurface-emitting lasers

Spectra have been obtained as a function of current for room temperature operation of deep red (0.77 μm) top-surface-emitting vertical-cavity-surface emitting lasers. From these spectra, the shift from single mode to multimode operation and the temperature rise from below threshold until thermal quenching are determined. By comparison with the wavelength at threshold for vertical cavity lasers with in-plane edge emitting lasers, the mismatch of the Fabry-Perot and gain peak is determined. This mismatch results in the minimum threshold current for the vertical-cavity lasers to occur considerably below room temperature     

An efficient bis(2-phenylquinoline) (acetylacetonate) iridium(III)-based red organic light-emitting diode with alternating guest:host emitting layers

We report a highly efficient electrophosphorescent bis(2-phenylquinoline) (acetylacetonate) iridium(III) [Ir(2-phq)₂(acac)]-based red organic light-emitting diode. The emission layer consists of a periodic thin layer of guest material of Ir(2-phq)₂(acac) separated by host material of 4,4′-Bis(carbazol-9-yl)biphenyl. The guest and host thicknesses were optimized independently to obtain the best performance. The current efficiency reaches to a maximum of 16.2 cd/A then drops to 15 and 11 cd/A at brightness of 10 and 100 cd/m², respectively. By reducing the thickness of the host layer, the power efficiency was further improved. Device with a maximum power efficiency of 8.3 lm/W was obtained. We also found that the concentration quenching in Ir(2-phq)₂(acac) is dominated by molecular aggregation. Excitonic quenching by radiationless Förster process is miniscule.     

电气产品在日本市场的准入规则(2)

日本工业标准局(JIS)将计算机定义为“在没有人员干涉下能够完成各种大规模计算和逻辑操作的数据处理装置”。日本经济通产省所编辑的机械统计年报中将计算机分为下列四种类型：     

电气产品在日本市场的准入规则(1)

详细介绍了电气产品进入日本市场需要遵守的法规体系和相关的准入规则。     

电气产品在日本市场的准入规则(3)

消费电子产品通常被分为：家用电器(包含电冰箱、洗碗机和吸尘器)、家用电子产品(包含TV和音频设备)以及其他电子消费产品(包含家用计算机)。此部分主要涉及家用电器，表11列出了一些典型的家用电器产品及其海关编码。     

Doping-dependent charge injection into regioregular poly(3-hexylthiophene)

We investigate charge injection from gold into regioregular poly(3-hexylthiophene) (P3HT) as a function of doping, by studying the nonlinear current–voltage characteristics of Au/P3HT/Au devices at different doping levels. The comparison of these characteristics allows us to distinguish contact-limited from bulk-limited transport. We demonstrate that there is a significant barrier to charge-injection from the contacts into the polymer, in spite of the good alignment of the Au work-function relative to the energy gap of P3HT and that the contact limitation is particularly strong at low doping levels. The contact resistance with a Ti electrode is similarly doping-level dependent. Our results show that the ability to control the doping level in organic semiconductors can be used as a tool to investigate the electronic properties of devices prepared from these materials.     

Integrating ICT adoption issues into (e-)leadership theory

Information and communication technologies (ICTs) are having a profound effect in society and organizations. However, the literature on ICT adoption—from selection to implementation—has not been well integrated into leadership theory. This is particularly true in terms of adoption. Leaders must adopt ICTs not only for their own competence—an antecedent condition for what is considered e-leadership, but choose, recommend, and support implementation of ICTs for their organizations/units to use. Leaders are also expected to become effective in dealing and navigating the challenges of leading within the digital space. At this moment, there are two pertinent literatures: the technology adoption literature and the enterprise resource planning literature—which can be considered an important special case of leadership change management literature—and which could provide the theoretical basis for developing a unified theoretical perspective on e-leadership. This article provides a framework and propositions to connect these literatures by focusing on the effects of individual leader characteristics on the ICT adoption process from both a personal and enterprise-wide perspective. Study limitations and future research opportunities are outlined.     

绿红双发光层有机电致磷光器件的载流子调控研究

制备了结构为ITO/MoO3(40nm)/NPB(40nm)/TCTA(10nm)/CBP∶GIR1(14%)(x)/CBP∶R-4B(6%)(30-x)/BCP(10nm)/AlQ(40nm)/LiF(1nm)/AL(100nm)的绿红磷光器件。通过调节红绿发光层的相对厚度,对器件的发光性能进行了研究。结果表明:x为15nm,电压为6V,电流密度为255.6mA/cm2,得到最高电流效率为15.4cd/A,红色发光峰值强度相对较大,绿色峰值稍弱的电致发光光谱。分析原因可能是掺杂染料与临近层的能级匹配和浓度等会影响发光层载流子注入与传输;空穴及电子阻挡层对发光层内载流子和激子的有效限制作用会提高掺杂染料在发光层的复合几率;另外,CBP的空穴迁移率大于电子迁移率,发光的主要区域位于发光层与BCP界面,掺杂于该区域的R-4B具有较高的发光强度。     

Opto-electronic properties of poly (fluorene) co-polymer red light-emitting devices on flexible plastic substrate

In this paper, we report on the multilayer poly (fluorene) co-polymer red light-emitting devices (PLEDs) fabricated on flexible plastic substrates. An organic hole transport layer (HTL) is inserted between PEDOT:PSS hole injection (HIL) and light-emissive layers (LEL). Since the highest occupied molecular orbital (HOMO) of the HTL is located between those of HIL and LEL, the insertion of HTL reduces the effective HOMO level offset between HIL and LEL, reducing the device operation voltage and producing comparable or better device efficiencies in comparison with the conventional PEDOT:PSS-only devices. Maximum emission efficiency, /spl sim/0.8 cd/A, power efficiency, /spl sim/0.7 lm/W, and external quantum efficiency, /spl sim/1.5%, have been obtained for multilayer red PLEDs.     

Modeling of boron and phosphorus implantation into (100) Germanium

Boron and phosphorus implants into germanium and silicon with energies from 20 to 320 keV and ion doses from 5/spl times/10/sup 13/ to 5/spl times/10/sup 16/ cm/sup -2/ were characterized using secondary ion mass spectrometry. The first four moments of all implants were calculated from the experimental data. Both the phosphorus and boron implants were found to be shallower in the germanium than in the silicon for the same implant parameters and high hole concentrations, as high as 2/spl times/10/sup 20/ cm/sup -3/, were detected by spreading resistance profiling immediately after boron implants without subsequent annealing. Channeling experiments using nuclear reaction analysis also indicated high substitutional fractions (/spl sim/19%) even in the highest dose case immediately after implant. A greater straggle (second moment) is, however, observed in the boron implants in the germanium than in the silicon despite having a shorter projected range in the germanium. Implant profiles predicted by Monte Carlo simulations and Lindhard-Scharff-Schiott theory were calculated to help clarify the implant behavior. Finally, the experimentally obtained moments were used to calculate Pearson distribution fits to the boron and phosphorus implants for rapid simulation of nonamorphizing doses over the entire energy range examined.