X波段8W,14W内匹配器件研究

对Ｘ波段ＧａＡｓ大栅宽器件的匹配及多胞功率合成技术进行了研究,做出了两胞合成８Ｗ,增益６ｄＢ和四胞合成１４Ｗ,增益５ｄＢ的内匹配器件,功率附加效率约为２２％。     

X波段8W,14W内匹配器件研究

对Ｘ波段ＧａＡｓ大栅宽器件的匹配及多胞功率合成技术进行了研究, 做出了两胞合成８Ｗ、增益６ｄＢ和四胞合成１４Ｗ、增益５ｄＢ的内匹配器件,功率附加效率约为２２％ 。     

八毫米四倍频器

研制了一种中大功率容量、高效率的８毫米四倍频器，具有结构合理、调试容易、体积小等特点。主要性能：输入功率容量５００ｍＷ，最大效率１５％，输出频率３４．４～３５．２ＧＨｚ，在２００ＭＨｚ带内功率起伏小于０．４ｄＢ。所用器件为南京电子器件研究所最新研制的ＷＢ７３型ＧａＡｓ功率变容管。     

8毫米功率HBT研究

简要介绍了异质结双极晶体管（ＨＢＴ）的发展现状。对ＨＢＴ器件性能进行了理论分析、设计并制作了功率ＨＢＴ器件样品。器件性能达到：ｆ＿Ｔ＝４０ＧＨｚ，ｆ＿（ｍａｘ）＝３２ＧＨｚ，在８ＧＨｚ工作频率下测量，输出功率为１００ｍＷ，功率附加效率为３１．３％，增益为９．４ｄＢ；ｆｏ＝１２ＧＨｚ，输出功率为２３．６ｍＷ，增益６．１ｄＢ，功率附加效率为２３．４％。     

8毫米功率HBT研究

简要介绍了异质结双极晶体管（ＨＢＴ）的发展现状，对ＨＢＴ器件性能进行了理论分析，设计并制作了功率ＨＢＴ器件样品。器件性能达到：ｆＴ＝４０ＧＨｚ，ｆｍａｘ＝３２ＧＨｚ在８ＧＨｚ工作频率下测量，输出功率为１００ｍＷ，功率附加效率为３１．３％，增益为９．４ｄＢ，ｆ０＝１２ＧＨｚ，输出功率为２３．６ｍＷ，增益６．１ｄＢ，功率附加效率为２３．４％。     

P波段脉冲调制激励放大组件

叙述一种Ｐ波段脉冲调制激励放大组件的设计方法及测试结果，采用微波单片集成电路和微波功率晶体管内匹配技术，制作出５４０～６１０ＭＨｚ下增益Ｇｐ≥３０ｄＢ、输出功率Ｐｏ≥５Ｗ±０．５ｄＢ的脉冲功率放大器。     

固态大功率宽带射频放大器

Ｏｐｈｉｒ推出了５０８０、５３０３０Ｂ和４０７６系列固态大功率宽带射频放大器,其工作频率分别为０．８～４．２ＧＨｚ、４．０～８．０ＧＨｚ、５．９～６．４ＧＨｚ,相应的输出功率分别为１００Ｗ、０６Ｗ和１２０Ｗ。该系列放大器具有极好的线性度和较宽的动态范围,失真小,噪声低,体积小,重量轻。５０８０型１ｄＢ压缩点的输出功率为８０Ｗ,三阶截断点为+６０ｄＢｍ,小信号增益为４８ｄＢ,增益平坦度为±２００ｄＢ,输入／输出驻波比小于２,交流输入功率为４５０Ｗ;５３０３０Ｂ型１ｄＢ压缩点的输出功率为０５Ｗ,三阶截断点为+３７…     

P波段脉冲调制激励放大组件

叙述一种Ｐ波段脉冲调制激励放大组件的设计方法及测试结果，采用微波单片集成电路和微波功率晶体管内匹配技术，制作出５４０－６１０ＭＨｚ下增益ＧＰ≥３０ｄＢ、输出功率ＰＯ≥５Ｗ±０．５ｄＢ的脉冲功率放大器。     

3.3—3.4GHz28W硅脉冲大功率晶体管的研制

本介绍了采用网状发射极结构，浓硼扩散发射极镇流电阻，输入，人匹配等技术研制出的硅微波脉冲大功率晶体管，该器件在３．１－３．４ＧＨｚ的雷达频带内，脉冲输出功率２８Ｗ，增益７．５ｄＢ，效率３０％。     

高增益硅超高频功率SIT

采用全自对准介质盖栅工艺，通过合理设计，研制成功一种高增益硅超高频功率ＳＩＴ。在４００ＭＨｚ工作频率、５０Ｖ工作电压下，其输出功率Ｐｏ为４０Ｗ，漏极效率η＿Ｄ接近６０％，功率增益Ｇｐ高达１６ｄＢ。Ｐｏ＝２５Ｗ时，三阶交调３ＩＭ为－１６ｄＢ；Ｐｏ＝２．５Ｗ时，３ＩＭ为－５０ｄＢ。     

A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications

GaAs FET amplifier modules for 20 GHz band satellite communications have been developed using newly developed power FETs. The deep recess gate structure was adopted in the power FET, which improved both power output capability and power gain. Power added efficiency of 22 percent with more than 1 W power output has been achieved with 3 mm gate width FETs. The amplifier modules containing two-stage internally matched FET's can be hermetically sealed in metal packages. The modules had 8.4-8.9 dB linear gain in the 17.7-18.8 GHz band and 7.9-8.4 dB linear gain in the 18.5-19.6 GHz band. The power output at 1 dB gain compression point was more than 0.5 W. The third-order intermodulation distortion ratio was 81-83 dB at 18.2 GHz and 77-80 dB at 18.9 GHz, when individual output signal power was -4 dBm.     

0.5 W 2?21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of an amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 × 300 ?m FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The poweradded efficiency was 14%. The linear gain was 5 ± 1 dB over the same frequency band.     

Impulse-doped GaAs power FETs for high efficiency operation

The authors have fabricated impulse-doped GaAs power FETs demonstrating 59% power-added efficiency with 10.4 dB associated gain and 0.33 W/mm at 10 GHz. To the best of their knowledge, this is the highest power-added efficiency ever reported at X-band for a GaAs FET     

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF) over a multi-octave band and a saturated output power (Psat) of 2 W at a cool temperature of -30degC . The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an f_T ~ 75 GHz. At a cool temperature of -30degC and a power bias of 15 V-400 mA, the MMIC achieves 0.25-0.45 dB average NF over a 2-8 GHz band and a linear P_1dB of 32.8 dBm ( ~ 2 W) with 25% power-added efficiency (PAE). At a medium bias of 12 V-200 mA, the amplifier achieves 0.1-0.2 dB average NF across the same band and a P_1dB of 32.2 dBm (1.66 W) with 35% PAE. The corresponding saturated output power is greater than 2 W. At a low noise bias of 5 V-200 mA, a remarkable 0.05-0.15 dB average NF is achieved with a P_1dB > 24 dBm and PAE ~ 33%. These results are believed to be the lowest NF ever reported for a multi-octave fully matched MMIC amplifier capable of > 2 W of output power.     

High-power pulsed and c.w. silicon double-drift IMPATT amplifiers at X-band

The letter presents some reflection-amplifier results for Si double-drift pulsed and c.w. IMPATTs. Peak r.f. powers of up to 11.6 and 16.5 W with instantaneous (?1 dB) bandwidths ~20% at gains >6 dB have been obtained at 10 GHz with 1- and 2-diode combinations when bias modulated with a pulsewidth of 4 ?s and p.r.f. of 1 kHz. A 2-diode c.w. combination has given a power of 7 W (c.w.) at 10.7 GHz with a gain of 6.5 dB and instantaneous (?1 dB) bandwidth of 400 MHz.     

Impedance calculations for modified coplanar waveguides

In view of the fact that recessed-gale FETs (Furutsuka et al, 1979 HILBERG , W. , 1969 , From approximations to exact relations for characteristic inpedances . I.E.E.E. Transactions on Microwave Theory and Techniques , 17 , 259 – 265 . [Google Scholar]) can sustain higher breakdown voltages and hence more power than conventional FETs, it is important to design new microwave transmission lines compatible with recessed-gate FETs on GaAs monolithic integrated circuits (MICs). Structures and impedances of three modified coplanar waveguides (CPWs) are presented here: (1) a finite-thickness CPW with a third ground plane for improved heat-sinking, (2) an abrupt-recessed strip CPW, and (3) a graded-recessed strip CPW. All of the above CPWs are structured to fit the recessed-gate FETs on MICs. The gap dimensions of the structures are assumed to be sufficiently small so that conformal mapping techniques suitable for a quasi-static mode can be applied.     

宽带GaAsFET微波单片集成单刀双掷开关

本文报道了一种采用串、并联ＦＥＴｓ结构的ＧａＡｓＭＭＩＣ单刀双掷开关。芯片尺寸为０．９７＊１．２３ｍｍ．在ＤＣ－１０ＧＨＺ频率范围内，插入损耗小于２．２ｄＢ，隔离度大于３２ｄＢ，反射损耗大于１２ｄＢ，并关时间小于１ｎｓ，在５ＧＨＺ下的功率处理能力大于２０ｄＢｍ。此开关具有极低的直流功率耗散。     

High-voltage high-frequency non-isolated DC–DC converters with passive-saving two-phase QSW-ZVS technique

This paper presents a new technique to improve the power efficiency for high-voltage non-isolated DC–DC converters running at high switching frequencies. A passive-saving two-phase quasi-square-wave zero-voltage-switching (PS-TPZVS) cell that consists of an auxiliary inductor and a capacitor sharing between two phases of sub-converters is proposed to realize ZVS operation for all power FETs under different conditions. Compared to the traditional two-phase ZVS topology, the proposed design saves 1 auxiliary inductor and 1 auxiliary capacitor for establishing ZVS of power FETs, and thus reduces both the volume and power losses of the auxiliary circuitry. To verify the performances of the proposed PS-TPZVS cell, a 140-W 4-MHz two-phase QSW-ZVS converter is designed and verified by simulations to achieve peak efficiencies of 97 % with enhancement-mode GaN FETs and 95 % with power MOSFETs. The proposed PS-TPZVS cell can also be applied to various topologies of non-isolated DC–DC converters and extended into a 2 N-phase topology with only N additional branches of the proposed cell.     

2.5W低噪声CMOSD类音频功放设计

提出了一种基于0.5μm5VCMOS工艺的低噪声PWM调制D类音频功率放大器。该放大器在5V电源电压下以全桥方式可以驱动4Ω负载输出2.5W功率;转换效率等于87%,信噪比达94dB(负载8Ω,输出功率1W);THD+N仅0.05%(负载4Ω,输出功率1W);PSRR为68dB(频率1kHz)。分析了整体电路结构及其线性化模型,并着重介绍了高性能前置斩波稳定运算放大器(开环增益117dB,等效输入噪声16μV.Hz-1/2),线性三角波振荡电路(斜率偏差仅±0.2%)和功率器件、驱动电路的设计。最后给出了D类放大器的测试结果。     

S波段振荡用大功率GaAs FET的设计和研制

本文叙述了S波段振荡用大功率GaAs FET的设计考虑、结构和制作,给出了器件性能。在3GHz下,器件振荡输出功率为3.34W,直流—射频转换效率为47.4％。