集成电路用硅基材料分离纯化技术的应用研究进展

硅基材料是集成电路制程中的关键材料之一，广泛应用于外延、化学气相沉积、离子注入、掺杂、刻蚀、清洗、掩蔽膜生成等工艺。硅基材料的纯度直接影响着集成电路的性能、集成度、成品率。文章阐述了在集成电路用硅基材料中应用较多的分离纯化技术的原理与应用进展，包括吸附精馏、络合精馏、亚沸精馏、减压精馏、光氯化、循环过滤等，比对了各种分离纯化技术的优缺点，并对硅基材料提纯的前景进行了分析和展望。     

高纯钛的制取

高纯钛作为溅射靶以TiSi_x、TiN膜的形式用作超大规模集成电路的控制电极、扩散阻挡层及配线材料等。材料中所含重金属     

金刚石表面金属化研究的新进展

介绍了近期国内外在金刚石表面金属化研究方面的一些进展，包括金刚石表面金属化技术及材料的研究等。并简要叙述了金刚石表面金属化提高粘结强度的本质。     

Al_2O_3单晶W-Y_2O_3金属化工艺研究

研究了Y2O3含量及金属化烧结温度对Al2O3单晶W-Y2O3金属化质量的影响。用纯钯钎料对金属化的Al2O3单晶与铌合金进行了真空封接,测试了封接强度和气密性,用扫描电子显微镜(SEM)观察了金属化层形貌,用X射线衍射(XRD)对金属化层进行了物相分析。结果显示,Y2O3含量为2.0%时,封接强度最高,达到45 MPa;Y2O3含量为3.0%时,封接气密性最高,氦漏率达到1×10-10Pa·m3·s-1;Y2O3含量达到5.0%时,金属化层烧结过程中生成的液相量过多,金属化层龟裂。金属化烧结温度对金属化质量及封接件的性能影响显著,金属化烧结温度越高,金属化层越致密,封接件的强度和气密性越高。烧结温度为1650℃时,金属化层经历了固相烧结,真空封接后金属化层呈不连续、厚度不均的分布状态。烧结温度达到1760℃及以上时,金属化层中有液相生成,封接件的强度和气密性明显提高。金属化温度达到1850℃时,焊接后的金属化层保持致密、连续的分布状态,界面反应产物为Al5Y3O12,封接强度高于40 MPa,氦漏气率达到1×10-10Pa·m3·s-1,为比较理想的金属化烧结温度。     

金属化膜电容器的自愈过程及影响因素

本文介绍了金属化膜电容器自愈过程，金属化膜的自愈既有化学反应，又有物理变化，是一个很复杂的过程。结合以往研究，发现电容器的电容量、外施电压、热处理工艺、电极厚度、浸渍工和绝缘介质等因素皆对其有影响。     

金属化薄膜电容器关键材料的现状与发展趋势

本文阐述了金属化薄膜电容器结构、功能、应用领域、新能源领域应用前景。分析了金属化薄膜、喷金料两大关键材料国内市场规模、技术现状,及与国外高端同行的技术差距,提出现有的技术解决方案及取得的成效,并展望了两大关键材料及配套锡焊料研究的发展趋势,为行业提供有益的参考。     

电子浆料及其制品生产技术

技术含义。电子浆料可分为导电浆料、电阻浆料、厚膜浆料、介质浆料及焊接浆料等,是片式电阻、电容、电位器、电感;电阻网络,多种瓷介电容,钽电容、碳膜电位器,玻璃釉电位器,高聚焦电位器,厚膜电路,混合集成电路,多种敏感元件,汽车防雾热线等所必需的主要功能材料。     

BeO陶瓷的性能、制备及应用

随着现代电子封装技术的迅速发展,对基板材料的性能提出了更高的要求,而高纯BeO陶瓷以其具有高热导率及其它优异性能基本上满足这些要求,但成本高、制备难度大而且存在毒性防护问题.文内阐述了BeO陶瓷的制备及金属化方法,讨论了BeO的毒性和防护措施,并对其在大功率电子器件与集成电路、原子能反应堆、高级耐火材料、光电技术等领域的应用进行评估;指出BeO陶瓷今后的研究重点应为从基础的烧结机理和制备工艺出发,寻找合适的烧结助剂组合,以提高其生产质量并降低生产成本.     

回转炉生产金属化铁球团矿的试验研究

在当今，与用气态还原剂生产金属化球团一样，也有使用固体燃料的，而且燃料的加入有两种方案。第一种方案——向能够获取部分还原或金属化材料的球团矿焙烧装置里直接传送细粒分散燃料。第二种方案——向往回转炉里装载的造块铁矿原料中加入固体燃料。     

半导体集成电路用金属硅化物的制备与检测评价

金属硅化物广泛用于微电子器件中的源、漏、栅极与金属电极间的接触,是制备纳米集成电路的关键材料之一.本文叙述了半导体集成电路用功能金属硅化物的相组成、界面反应和形成机制以及热蒸发、离子注入、溅射沉积、分子束外延等多种制备技术.比较了TiSi2,CoSi2,NiSi的材料性质及其对不同技术节点集成电路性能的影响.分析了退火温度与NiSi晶体结构和晶格常数间的关系.阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性.讨论了上述金属硅化物的性能评价与缺陷,热稳定性的检测方法.分析认为,探索32nm及以下技术节点极大规模半导体集成电路用新型金属硅化物已成为今后研究的主攻方向.     

集成电路制造用溅射靶材

溅射靶材常用于半导体产业、记录媒体产业和先进显示器产业。在不同产业中,半导体集成电路制造业对溅射靶材的质量要求最高。对用于集成电路制造的溅射靶材的材质类型、纯度要求、外形发展进行了阐述,并讨论了溅射靶材微观组织对溅射薄膜性质的影响,以及靶材中夹杂物、晶粒尺寸、晶粒取向的控制方法。     

还原扩散法直接制造ZrNi合金粉末的研究

对以Ｃａ作还原剂ＺｒＯ粉末和Ｎｉ粉末作原料，用还原扩散法直接制造ＺｒＮｉ合金粉末的过程进行了研究分析，发现Ｃａ不令是ＺｒＯ２的还原剂，而且Ｎｉ的溶剂和载体，在合金形成过程中，Ｎｉ通过在液体Ｃａ中溶解和扩散，到达被还原出出来的金属Ｚｒ表面，并与Ｚｒ合金化形成ＺｒＮｉ合金因此Ｃａ的添加量是过程的关键因素。     

Study on pellets metallized sintering of zinc- bearing waste

In order to develop new techniques of utilizing zinc- bearing waste, three kinds of zinc- bearing dusts and one kind of pyrite cinder were used for the pellets- metallized sintering process(PMSP). The results show that iron bearing mixture is used to ball under the conditions of balling at 18 mass% moisture for 13min. The green balls are used to conduct the metallized sintering process under conditions of mass ratio C/Fe of 0. 5, in which the carbon ratio of inside to outside pellets of 50??50, the bed height of 400mm and the air speed of 0. 4m/s. The pre- reduced product, assaying 60. 53 mass% Fe with the metallization degree of 45. 23%, and the Zn content of 0. 18 mass%, was obtained at the yield of 85. 62%, productivity of 0. 471t/(m2??h), tumble index of 81. 31%, the solid fuel consumption of 309. 67kg/t, respectively. The dust obtained by flue gas condensation can be also used as raw material for zinc smelting after further purification.     

硫酸烧渣生产金属化团块的研究

为合理处用硫酸烧渣中的铁资源，进行了煤基直接还原生产金属化团块的研究，提出了润磨造球－预热焙烧－磁选－冷固结成型的新工艺流程。所得产品的金属化率约９４％，含铁品位９０％，铁回收率９０％，直接还原铁粉冷固成型后可作为电炉原料。     

短流程电炉原料工程刍议

文中论述了重视开发电炉新原料，金属化球团，脱炭粒铁并促其快速发展，使入炉原料有一个合理比例，以保证电炉钢铁质量。     

Conditions of interaction of materials in gas thermal spraying of metallized oxide powders on AK-4 alloy

Conclusions The analysis made from the viewpoints of thermodynamics and the quasichemical theory of the formation of bonds in gas thermal spraying indicates the unquestionable advantages of aluminum oxide composites and the significant role of surface oxide films in the creation of reliable thermal protection coatings on aluminum alloys. It is most desirable to obtain ZrO₂ base coatings and a change in the nature of the oxide film on the surface of AK-4 alloy by preliminary formation of a NiO sublayer on it. The use for spraying of metallized oxide powders substantially increases the energy of contact interaction of the materials on the base. The components of the metallized powders interacts with the formation of types Zr-Al and Zr-Al-Ni oxidized phases. The depth of mutual diffusion of the elements of the coating and the base is 0.5–3 um. The adhesion strength of the optimum composition thermal protection coating with the surface of AK-4 alloy reaches 20–25 MPa.Translated from Poroshkovaya Metallurgiya, No. 8(284), pp. 48–52, August, 1986.     

非金属颗粒表面镀铜及其对烧结摩擦材料强度的影响

采用高装载量的化学镀铜方法,使石墨、SiO_2等非金属颗粒表面金属化,改善非金属颗粒与金属(合金)基体的结合状态,从而提高了烧结摩擦材料的强度。     

X-ray imaging using amorphous selenium: feasibility of a flat panel self-scanned detector for digital radiology

We investigate a concept for making a large area, flat-panel detector for digital radiology. It employs an x-ray sensitive photoconductor to convert incident x-radiation to a charge image which is then electronically read out with a large area integrated circuit. The large area integrated circuit, also called an active matrix, consists of a two-dimensional array of thin film transistors (TFTs). The potential advantages of the flat-panel detector for digital radiography include: instantaneous digital radiographs without operator intervention; compact size approaching that of a screen-film cassette and thus compatibility with existing x-ray equipment; high quantum efficiency combined with high resolution. Its potential advantages over the x-ray image intensifier (XRII)/video systems for fluoroscopy include: compactness; geometric accuracy; high resolution, and absence of veiling glare. The feasibility of the detector for digital radiology was investigated using the properties of a particular photoconductor (amorphous selenium) and active matrix array (with cadmium selenide TFTs). The results showed that it can potentially satisfy the detector design requirements for radiography (e.g., chest radiography and mammography). For fluoroscopy, the images can be obtained in real-time but the detector is not quantum noise limited below the mean exposure rate typically used in fluoroscopy. Possible improvements in x-ray sensitivity and noise performance for the application in fluoroscopy are discussed.     

Diamond-hard alloy macrocomposite material: Development and application

A new diamond-hard alloy macrocomposite material consisting of diamond grits (0.5–0.8 mm or more in size) and a WC-Co matrix has been developed. The material is characterized by high mechanical properties of the matrix (the same as for WC-Co monolithic hard alloys) while diamonds remain completely intact (no graphitization or dissolution in cobalt melt). This process does not require superhigh pressures. Hard-alloy samples sintered beforehand in conditions that ensure the maximum mechanical properties (1450–1500°C, 30–60 min holding) are used as initial materials. Hollows (cells) or ditches of specific sizes (depth, width) are made in these samples with mechanical or electrophysical methods, and then diamond crystals (grits) commensurate with the hollows, cells, or ditches are placed in them. Vacuum infiltration (brazing) at moderate temperatures (900–1150°C) with adhesion-active alloys (or metallized diamonds) is the final stage in the formation of the composite. Therefore, strong adhesion-mechanical fixation of diamond grits in the hard-alloy matrix is ensured. The new material is efficiently used in diamond bits.     

集成运算式触发电路在整流器中的应用

本文论述了三相桥式整流装置采用集成运算式触发电路的结构和工作原理，并就其触发电路的特点与分立原件的触发电路和KC系列触发电路进行了比较，对在实际应用中易检修，维护的优点和可靠性进行了阐述。