Si基GaN上的欧姆接触

研究了Ｓｉ基ＧａＮ上的欧姆接触,对在不同的合金化条件下铝（Ａｌ）和钛铝铂金（Ｔｉ／Ａｌ／Ｐｔ／Ａｕ）接触在不同的合金下的性质作了详尽的分析。Ａｌ／ＧａＮ在４５０℃氮气气氛退火３ｍｉｎ取得最好的欧姆接触率７．５＊１０＾－３Ω．ｃｍ＾２,而Ｔｉ／Ａｌ／Ｐｔ／Ａｕ／ＧａＮ接触在６５０℃氮气气氛退火２０ｓ取得最好的欧姆接触８．４＊１０＾－５Ω．ｃｍ＾２,而且Ｔｉ／Ａｌ／Ｐｔ／Ａｕ／ＧａＮ接触有较好的热稳定     

Ge／Pd／n—GaAs低阻欧姆接触的SIMS分析

采用Ｇｅ／Ｐｄ／ＧａＡｓ结构和快速热退火在ｎ－ＧａＡｓ上形成了低阻欧姆接触，利用二次离子质谱技术揭示和讨论了低欧姆接触形成的机理。比较了采用Ｘ＾＋和ＧｓＸ＾＋信号检测的Ｇｅ，Ｐｄ，Ｇａ和Ａｓ的深度分布。结果表明采用ＣｓＸ＾＋可以提供更准确的结果和成分信息。     

P型高阻CdZnTe晶体表面接触的电学性能研究

用原子力显微镜（ＡＦＭ）研究了Ｐ型高阻Ｃｄ０．８Ｚｎ０．２Ｔｅ晶体表面状况对接触电学特性的影响,研究了三种金属和ＡｕＣｌ３作为接触层材料的电学特性和接触机理。研究表明采用化学方法沉积ＡｕＣｌ３膜能在ＣｄＺｎＴｅ光滑表面形成一层重掺杂层,较金属更易获得欧姆接触,热处理可改善接触的欧姆性,增强接触层与晶体表面的结合力。     

Au/Ti/W/Ti与n-GaAs欧姆接触的特性研究

用磁控溅射系统和快速合金化法制备了Au/Ti/W/Ti多层金属和n-GaAs材料的欧姆接触,用传输线法对其比接触电阻进行了测试,并利用俄歇电子能谱(AES)和X射线衍射图谱(XRD)对接触的微观结构进行了研究。结果表明该接触在700℃时比接触电阻为1.5×10~(-4)Ω·cm~2,快速合金化后呈现欧姆特性可能与接触界面处生成的TiAs相有关。     

p型金刚石薄膜欧姆接触的研究

对p型金刚石薄膜上Ti／Au结构（金刚石-Ti／Au结构）的政姆接触和界面特性进行了研究。采用微波等离子体CVD方法在Si基片上制作出掺硼的金刚石薄膜，然后在金刚石薄膜表面上蒸发Ti／Au双层金属以形成接触电极。样品经700℃下氩气氛中热处理50min，可得到线性变化的I－U特性和比接触电阻率为2×10－4Ωcm2的欧姆接触。还采用X射线衍射图谱来分析金刚石薄膜与Ti／Au的界面，结果揭示了在金刚石-Ti／Au结构中形成欧姆接触的条件与规律。     

GaN基器件中的欧姆接触

GaN材料以其优良的光电性质，已成为制造发光器件和高温大功率器件的最有前途的材料。欧姆接触是制备GaN基器件的关键技术之一。着重论述了在n-GaN和p-GaN上制备欧姆接触的研究现状。     

ZnO上欧姆接触的研究进展

为制备高性能的ZnO基器件如UV光发射器，探测器、场效应晶体管，在ZnO上形成优良的金属电极是十分必要的。回顾了近年来ZnO上制备欧姆接触的新进展，对在n型ZnO上制备欧姆接触的Al，A1/Pt，A1/Au，Ti/Al，Ti，AU，Ti/A1/Pt/Au，Re/Ti/Au等金属化方案的性能与特点，以及影响欧姆接触电阻率和热稳定性的因素，如表面处理和退火等进行了分析与归纳。同时，对P型ZnO上难以获得低接触电阻的原因进行了讨论。文章还简要说明了ZnO上透明欧姆接触的研究现状，指出获得低阻、高导电、高透光和高热稳定性的接触是未来ZnO基光电器件的发展方向。     

低温真空下Cu-Cu界面间接触热阻的实验研究

简单介绍了低温真空下固体界面间的接触热阻现象,搭建了一个能较精确测量圆柱型及薄片型材料间接触热阻的实验台。在真空环境下,测量了低温真空下Ｃｕ－Ｃｕ界面间的接触热阻。实验数据表明,接触热阻与压力、温度有关一定的依赖关系。最后,根据修正Ｇ－Ｗ模型,对实验结果进行了理论理论分析与比较,表明实验结果是正确的。     

低温真空下Cu—Cu界面间接触热阻的实验研究

简单介绍了低温真空下固体界面间的接触热阻现象,搭建了一个能较精确测量圆柱型及薄片型材料间接触热阻的实验台。在真空环境下,测量了低温真空下Ｃｕ－Ｃｕ界面间的接触热阻。实验数据表明,接触热阻与压力、温度有关一定的依赖关系。最后,根据修正Ｇ－Ｗ模型,对实验结果进行了理论理论分析与比较,表明实验结果是正确的。     

Si基n型GaN的欧姆接触研究

GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本对Si基n型GaN上的A1单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I—U特性曲线，X射线衍射以及二次离子质谱分析，揭示了界面固相反应对欧姆接触的影响，提出了改善这两种电极欧姆接触的二次退火方法。     

Evaluation of metal-nanowire electrical contacts by measuring contact end resistance

It is known, but often unappreciated, that the performance of nanowire (NW)-based electrical devices can be significantly affected by electrical contacts between electrodes and NWs, sometimes to the extent that it is really the contacts that determine the performance. To correctly understand and design NW device operation, it is thus important to carefully measure the contact resistance and evaluate the contact parameters, specific contact resistance and transfer length. A four-terminal pattern or a transmission line model (TLM) pattern has been widely used to measure contact resistance of NW devices and the TLM has been typically used to extract contact parameters of NW devices. However, the conventional method assumes that the electrical properties of semiconducting NW regions covered by a metal are not changed after electrode formation. In this study, we report that the conventional methods for contact evaluation can give rise to considerable errors because of an altered property of the NW under the electrodes. We demonstrate that more correct contact resistance can be measured from the TLM pattern rather than the four-terminal pattern and correct contact parameters including the effects of changed NW properties under electrodes can be evaluated by using the contact end resistance measurement method.     

Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using hetero-structural GaAs-based compound semiconductors. Although the GaAs crystal growth techniques had reached a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis.Our research efforts have been focused to develop low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance ohmic contact formation. In this paper, two typical examples of ohmic contact materials developed by forming ISL were given. The one was refractory NiGe-based ohmic contact material, which was developed by forming the homo-epitaxial ISL doped heavily with donors. This heavily doped ISL was discovered to be formed through the regrowth mechanism of GaAs layers at the NiGe/GaAs interfaces during annealing at elevated temperatures. To reduce the contact resistance further down to a value required by the device designers, an addition of small amounts of third elements to NiGe, which have strong binding energy with Ga, was found to be essential. These third elements contributed to increase the carrier concentration in ISL. The low resistance ohmic contact materials developed by forming homo-epitaxial ISL were Ni/M/Ge where a slash ‘/’ denotes the deposition sequence and M is an extremely thin (∼5 nm) layer of Au, Ag, Pd, Pt or In. The other was refractory In_xGa_1−xAs-based ohmic contact materials which were developed by forming the hetero-epitaxial ISL with low Schottky barrier to the contacting metals by growing the In_xGa_1−xAs layers on the GaAs substrate by sputter-depositing In_xGa_1−xAs targets and subsequently annealing at elevated temperatures. To reduce the contact resistance, it was found that this In_xGa_1−xAs (ISL) layer had to have In compositional gradient normal to the GaAs surface: the In concentration being rich at the metal/In_xGa_1−xAs interface and poor close to the In_xGa_1−xAs/GaAs interface. This concentration graded ISL reduced both the barrier heights at the metal/ISL and ISL/GaAs interfaces and reduced the contact resistance. The ohmic contact materials developed by forming hetero-epitaxial ISL was In_0.7Ga_0.3As/Ni/WN₂/W. These contact materials formed refractory compounds at the interfaces, which was also found to be essential to improve thermal stability of ohmic contacts used in the GaAs devices.     

Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies

The static and high frequency properties of GaAs and InP impatts have been investigated for lower microwave and higher millimetre-wave frequencies using the computer simulation programmes developed by the authors. The profiles of negative resistance and reactance in the depletion layer of SDR and DDR devices based on GaAs and InP and their admittance properties have been investigated. The results indicate that InP impatts of the SDR and DDR varieties have higher drift zone voltage, higher negative resistance and higher negative conductance as compared to their GaAs counterparts, both in the microwave frequency and in the millimetre-wave frequency ranges. It is thus observed that higher radio-frequency power can be obtained from InP devices than from GaAs devices. Impact avalanche-and-transit time hereinafter referred to as impatts.     

Specific contact resistance and metallurgical process of the silver-based paste for making ohmic contact structure on the porous silicon/p-Si surface of the silicon solar cell

Porous silicon has been considered as a promising optoelectronic material for developing a variety of optoelectronic devices and sensors. In the present study, the electrical properties and metallurgical process of the screen-printed Ag metallization formed on the porous silicon surface of the silicon solar cell have been investigated. The contact structure consists of thick-film Ag metal contact patterned on the top of the porous silicon surface. The sintering process consists of a rapid firing step at 750–825 °C in air ambient. It results in the formation of a nearly perfect contact structure between the Ag metal and porous silicon/p-Si structure that forms the top metalization for the screen-printed silicon solar cells. The SEM picture shows that Ag metal firmly coalesces with the silicon surface with a relatively smooth interfacial morphology. This implies that high temperature fire-through step has not introduced any signs of adverse effect of junction puncture or excessive Ag indiffusion, etc. The three-point probe (TPP) method was applied to estimate the specific contact resistance, ρ _c (Ω-cm²) of the contact structure. The TPP measurement shows that contact structure has excellent ohmic properties with ρ _c = 1.2 × 10⁻⁶ Ω-cm² when the metal contact sintered at 825 °C. This value of the specific contact resistance is almost three orders of magnitude lower than the corresponding value of the ρ _c = 7.35 × 10⁻³ Ω-cm² obtained for the contact structure sintered at 750 °C. This improvement in the specific contact resistance indicates that with increase in the sintering temperature, the barrier properties of the contact structure at the interface of the Ag metal and porous silicon structure improved which in turn results a lower specific contact resistance of the contact structure.     

低温等离子体对血管内金属支架的表面改性

生物材料用于人体必须要具备生物相容性。尤其是与血液相接触的材料如血管内支架必须要具备血液相容性。材料的表面特性直接影响血液系统中是否会出现血栓。本文针对金属血管内支架的表面特性、与血液的界面反应以及用于提高血液相容性的低温等离子表面改性进行了简要综述     

The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs

In this study, the effect of the emitter-base contact spacing on the current gain of InGaP/GaAs HBTs has been described and the base contact recombination current has been experimentally studied. When devices were passivated by nitride, the current gain of InGaP/GaAs HBTs showed no variation with the perimeter to area ratio, which suggested that the surface recombination current of InGaP/GaAs HBTs was negligible, leading the base contact recombination current to affect the current gain. It was found that the base contact recombination current significantly degraded the current gain when the emitter-base contact spacing was reduced to below 0.5 μm. The diode equation was used to model the base contact recombination current, and an ideality factor of 1.76 was obtained.     

Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2

Despite recent efforts for the development of transition‐metal‐dichalcogenide‐based high‐performance thin‐film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high‐quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition‐metal dichalcogenides semiconductor–metal layers and suggest a new device scheme utilizing the low‐resistance edge contact.     

Development of cadmium-free silver metal-oxide contact materials

A cadmium-free silver-base alloy has been developed to substitute the standard Ag-12% CdO contact alloy which is widely used in electrical and electronics industries. Substitution of cadmium was attempted through the addition of zinc as the basic and major alloying element and with minor additions of tin and copper. The developed alloy, after internal oxidation, possesses better electrical contact characteristics than the standard alloy.     

Influence of ion-induced interfacial chemical reactivity on contact resistance

Contact resistance measurements of chromium contacts deposited by partially ionized beam deposition on transparent conducting indium tin oxide (ITO) were performed. These provide a direct experimental evidence of the influence of interfacial chemical interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization efficiency. The true contact resistivityρ _c is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρ _c decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase of carrier concentration and lower interfacial resistance.     

Thermal reliability of n-GaAs/Ti/Pt/Au Schottky contacts with thin Ti films for reduced gate resistance

The thermal stability of Ti/Pt/Au Schottky contacts on n-GaAs with Ti films 0–60 nm is investigated. The contacts with Ti films as small as 10 nm remain thermally stable with annealing up to 400°C. The changes induced by thermal treatment in the electrical characteristics of the contacts are correlated with the Rutherford backscattering and microscopic analysis of the annealed samples. It shows profuse interdiffusion and interfacial reaction with 300°C anneal for the GaAs/Pt/Au system. It has been found that introducing the Ti film between GaAs and Pt/Au, the interdiffusion of Pt and Au is also prevented. These results are useful for reducing the gate metallisation resistance of metal semiconductor field effect transistors.