Design approach for high‐bandwidth low‐power three‐stage operational amplifiers

A new design approach to optimize the frequency compensation network of three‐stage operational amplifiers (op‐amps) is presented. The proposed criterion is aimed at maximizing the bandwidth of well‐established three‐stage op‐amps using Nested‐Miller Compensation with feedforward tranconductance stage and nulling resistor (NMCFNR). As shown by design examples in a commercial 0.35‐µm CMOS technology, the proposed approach allows the amplifier bandwidth to be enhanced significantly with respect to that resulting from using existing design strategies for NMCFNR op‐amps. It is also demonstrated that NMCFNR op‐amps, designed according to the proposed method, even guarantee larger values of the gain‐bandwidth product than three‐stage amplifiers using more complicated frequency compensation techniques, such as AC boosting compensation or damping‐factor control frequency compensation. Copyright © 2010 John Wiley & Sons, Ltd.     

Graphical analysis and design of multistage operational amplifiers with active feedback Miller compensation

Frequency compensation of a multistage operational amplifier (op‐amp) is normally performed through solving nodal equations of an equivalent circuit to obtain the op‐amp's final transfer function. The process is often very tedious and offers little insight into the roles of the selected compensation scheme. In this paper, we present a graphical design approach for two‐stage and three‐stage op‐amps with active feedback Miller compensation. By viewing frequency compensation as a standard feedback problem, we can utilize the well‐known graphical tools such as the root locus and Bode plot to understand the effects of the compensation and to estimate the locations of the closed‐loop poles and zeros of the op‐amp. Intuitive graphical design procedures for two‐stage and three‐stage op‐amps are also formulated. To show its effectiveness, we illustrate our design approach through the design of a three‐stage op‐amp in a standard 0.18‐μm complementary metal‐oxide‐semiconductor (CMOS) process. With a load capacitance of 500 pF, post‐layout simulations show that the op‐amp achieves a low‐frequency gain of 144 dB, a phase margin of 58^°, and a unity‐gain frequency of 1.38 MHz while consuming a total bias current of 31 μA from a 1.8‐V supply voltage. Comparisons with the published amplifiers show that our op‐amp achieves the figure of merits comparable to those of the state of the art. Copyright © 2015 John Wiley & Sons, Ltd.     

Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

A family of bulk‐driven CMOS operational transconductance amplifiers (OTAs) has been designed for extremely low supply voltages (0.3‐0.5 V). Three OTA design schemes with different gain boosting techniques and class AB input/output stages are discussed. A detailed comparison among these schemes has been presented in terms of performance characteristics such as voltage gain, gain‐bandwidth product, slew rate, circuit sensitivity to process/mismatch variations, and silicon area. The design procedures for all the compared structures have been developed. The OTAs have been fabricated in a standard 0.18‐μm n‐well CMOS process from TSMC. Chip test results are in good agreement with theoretical predictions and simulations.     

±0.18‐V supply voltage gate‐driven PGA with 0.7‐Hz to 2‐kHz constant bandwidth and 0.15‐μW power dissipation

A simple gate‐driven scheme to reduce the minimum supply voltage of AC coupled amplifiers by close to a factor of two is introduced. The inclusion of a floating battery in the feedback loop allows both input terminals of the op‐amp to operate very close to a supply rail. This reduces essentially supply requirements. The scheme is verified experimentally with the example of a PGA that operates with ±0.18‐V supply voltages in 0.18‐μm CMOS technology and a power dissipation of about 0.15 μW. It has a 4‐bit digitally programmable gain and 0.7‐Hz to 2‐kHz true constant bandwidth that is independent on gain with a 25‐pF load capacitor. In addition, simulations of the same circuit in 0.13‐μm CMOS technology show that the proposed scheme allows operation with ±0.08‐V supplies, 7.5‐Hz to 8‐kHz true constant bandwidth with a 25‐pF load capacitor, and a total power dissipation of 0.07 μW.     

A 0.6 V, 2.11 MHz, 62 dB SFDR active‐RC filter in 0.13µm CMOS process

Active‐RC biquad is proposed, which allows the DC level of the input of operational amplifier (op‐amp) to be different from that of the op‐amp output, enabling the low‐voltage operation. The proposed biquad realizes a second‐order transfer function with only one op‐amp, rendering even lower power consumption. By cascading two biquads, a 0.6 V fourth‐order filter is realized in a 0.13µm CMOS technology. While dissipating only 0.42 mW, the filter shows 2.11 MHz cut‐off frequency and 62 dB spurious‐free dynamic range. Copyright © 2008 John Wiley & Sons, Ltd.     

A subthreshold current‐sensing ΣΔ modulator for low‐voltage and low‐power sensor interfaces

A continuous‐time (CT) ΣΔ modulator for sensing and direct analog‐to‐digital conversion of nA‐range (subthreshold) currents is presented in this work. The presented modulator uses a subthreshold technique based on subthreshold source‐coupled logic cells to efficiently convert subthreshold current to digital code without performing current‐to‐voltage conversion. As a benefit of this technique, the current‐sensing CT ΣΔ modulator operates at low voltage and consumes very low power, which makes it convenient for low‐power and low‐voltage current‐mode sensor interfaces. The prototype design is implemented in a 0.18 µm standard complementary metal‐oxide semiconductor technology. The modulator operates with a supply voltage of 0.8 V and consumes 5.43 μW of power at the maximum bandwidth of 20 kHz. The obtainable current‐sensing resolution ranges from effective number of bits (ENOB) = 7.1 bits at a 5 kHz bandwidth to ENOB = 6.5 bits at a 20 kHz bandwidth (ENOB). The obtained power efficiency (peak FoM = 1.5 pJ/conv) outperforms existing current‐mode analog‐to‐digital converter designs and is comparable with the voltage‐mode CT ΣΔ modulators. The modulator generates very low levels of switching noise thanks to CT operation and subthreshold current‐mode circuits that draw a constant subthreshold current from the voltage supply. The presented modulator is used as a readout interface for sensors with current‐mode output in ultra low‐power conditions and is also suitable to perform on‐chip current measurements in power management circuits. Copyright © 2014 John Wiley & Sons, Ltd.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range,voltage reference

A low‐voltage, low‐power, low‐area, wide‐temperature‐range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190 °C (?60 to 130 °C) while consuming only 4 μW at 0.75 V. It performs a high‐order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade‐off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18‐µm standard CMOS technology and occupies an area of 0.039 mm². The proposed reference circuit is suitable for high‐precision, low‐energy‐budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright © 2015 John Wiley & Sons, Ltd.     

Design criterion for high‐speed low‐power SC circuits

The settling behavior of switched‐capacitor (SC) circuits is investigated in this paper. The analysis is performed for typical SC circuits employing two‐stage Miller‐compensated operational amplifiers (op‐amps). It aims to evaluate the real effectiveness of the conventional design approach for the optimization of op‐amp settling performances. It is demonstrated that the classical strategy is quite inaccurate in typical situations in which the load capacitance to be driven by the SC circuit is small. The presented study allows a new settling optimization strategy based on an advanced circuit model to be defined. As shown by design examples in a commercial 0.35‐ µm CMOS technology, the proposed approach guarantees a significant settling time reduction with respect to the existing settling optimization strategy, especially in the presence of small capacitive loads to be driven by the SC circuit. Copyright © 2010 John Wiley & Sons, Ltd.     

A high‐order curvature‐corrected CMOS bandgap voltage reference with constant current technique

A high‐order curvature‐corrected complementary metal–oxide–semiconductor (CMOS) bandgap voltage reference (BGR), utilizing the temperature‐dependent resistor and constant current technique, is presented. Considering the process variation, a resistor trimming network is introduced in this work. The circuit is implemented in a standard 0.35‐µm CMOS process. The measurement results have confirmed that the proposed BGR operates with a supply voltage of 1.8 V, consuming 45 μW at room temperature (25 °C), and the temperature coefficient of the output voltage reference is about 5.5 ppm/°C from −40 °C to 125 °C. The measured power supply rejection ratio is −38.8 dB at 1 kHz. The BGR is compatible with low‐voltage and low‐power circuit design when the structure of operational amplifiers and all the devices in the proposed bandgap reference are properly designed. Copyright © 2012 John Wiley & Sons, Ltd.     

Super class AB OTA without open‐loop gain degradation based on dynamic cascode biasing

A scheme to achieve simultaneously extremely high slew‐rate improvement and avoiding open‐loop gain degradation in one‐stage super class AB op‐amps is introduced. It overcomes the serious shortcoming of super class AB operational transconductance amplifiers that shows very high‐output current enhancement factors at the expense of degrading the open‐loop gain. The proposed scheme uses dynamically biased cascode transistors to avoid gain and slew‐rate degradation. Experimental results of a super class AB operational transconductance amplifier in 180‐nm complementary metal‐oxide semiconductor technology with open‐loop gain of 67 dB, a factor 2 improvement in GBW , and a current enhancement factor of 270 verify the proposed scheme. Copyright © 2017 John Wiley & Sons, Ltd.     

A waveform generator circuit for extra low‐frequency CMOS micro‐power applications

This paper presents a novel low‐power CMOS extra low‐frequency (ELF) waveform generator based on an operational trans‐conductance amplifier (OTA). The generator has been designed and fabricated using 2.5‐V devices available in 130‐nm IBM CMOS technology with a ±1.2‐V voltage supply. Using the same topology, two sets of device dimensions and circuit components are designed and fabricated for comparing relative performance, silicon area and power dissipation. The first design consumes 691 μW, while the second design consumes 943 μW using the same voltage supply. This low‐power performance enables the circuit to be used in many micro‐power applications. ELF oscillation is achieved for the two designs being around 3.95 Hz and 3.90 Hz, respectively, with negligible waveform distortion. The measured frequencies agree well with the simulation results. The first design is found to provide overall optimal performance compared to the second design at the expense of higher silicon area. Copyright © 2015 John Wiley & Sons, Ltd.     

A 7.5‐μW 0.08‐mm2 single‐ended SC delta‐sigma ADC for acoustic sensor applications

This study presents an ultra‐low‐power, small‐size, 1‐bit, single‐ended, and switched‐capacitor (SC) delta‐sigma analog‐to‐digital converter (ADC) for wireless acoustic sensor nodes. This wireless sensor node has a delta‐sigma ADC that converts the sensed signal to a digital signal for convenient data processing and emphasizes the features of small size and low‐power consumption. The chip area of the delta‐sigma ADC is dominated by the capacitor; therefore, a novel common‐mode (CM) controlling technique with only transistors is proposed. This ADC achieves an extremely small size of 0.08 mm² in a 130‐nm CMOS process. The conventional operational transconductance amplifiers (OTAs) are replaced by inverters in the weak inversion region to achieve high power efficiency. At 4‐MHz sampling frequency and 0.7‐V power supply voltage, the delta‐sigma ADC achieves a 55.8‐dB signal‐to‐noise‐plus‐distortion ratio (SNDR) and a 298‐fJ/step figure‐of‐merit (FOM) in a signal bandwidth of 25 kHz, while consuming only 7.5 μW of power. Copyright © 2015 John Wiley & Sons, Ltd.     

0.5‐V bulk‐driven differential amplifier

A new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage. The amplifier operates at a supply voltage of less than 0.5 V, performing input transconductance almost equal to a gate transconductance and relatively high voltage gain without the need for gain boosting. The circuit was designed and simulated using a standard 0.18‐µm CMOS n‐well process. The low‐frequency gain of the amplifier was 56 dB, the unity gain bandwidth was approximately 3.2 MHz, the spot noise was 100 nV/√Hz at 100 kHz and the current consumption was 90 μΑ. Copyright © 2012 John Wiley & Sons, Ltd.     

Analysis and design of voltage‐controlled current sources for a grounded load

The paper presents the structure and the principle of operation of the ‘improved’ Howland current pumps (or voltage‐controlled current sources (VCCSs) for a grounded load). In particular, under review is the VCCS employing power operational amplifier (op amp) and the VCCS using low power op amp and an additional power transistor, extending working dynamic range. On the basis of analysis of the operational principle, the equations for transfer functions of both circuits and formulas for the related dynamic electrical parameters are obtained. Moreover, using these formulas, a design procedure is developed, and recommendations for simulation modelling are given. The efficiency of the proposed procedure is verified by simulation modelling and experimental testing of sample electronic circuits of VCCSs. Copyright © 2013 John Wiley & Sons, Ltd.     

A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference

An all‐CMOS, low‐power, wide‐temperature‐range, curvature‐compensated voltage reference is presented. The proposed topology achieves a measured temperature coefficient of 12.9 ppm/°C for a wide temperature range of 180°C ( − 60 to 120°C) at a bias voltage of 0.7 V while consuming a mere 2.7 μW. The high‐order curvature compensation, which leads to a low‐temperature sensitivity of the reference voltage, is performed using a new, simple, but efficient methodology. The non‐linearities of an N‐type metal‐oxide‐semiconductor (NMOS) device operated in subthreshold are combined with the non‐linearities of two different kinds of polysilicon resistors, leading to the improved performance. The extended temperature range of this voltage reference gives it an important competitive advantage, especially at lower temperatures, where prior art designs' performance deteriorate abruptly. In addition, it utilizes an innovative trimming methodology whereby two trimmable resistors enable the tuning of both the overall slope and non‐linearities of the temperature sensitivity. The design was fabricated using TowerJazz Semiconductor's CMOS 0.18 μm technology, without using diodes or any external components such as compensating capacitors. It has an area of 0.023 mm² and is suitable for high‐performance power‐aware applications as well as applications operating in extreme temperatures. Copyright © 2016 John Wiley & Sons, Ltd.     

A 63‐dB gain OTA operating in subthreshold with 20‐nW power consumption

This paper presents a two‐stage bulk‐driven operational transconductance amplifier operating in weak‐inversion region. The proposed amplifier is upgraded using recycling structure, current shunt technique, positive feedback source degeneration and indirect frequency compensation feedback to enhance transconductance under a reasonable stability. Combining these approaches leads to an ultra‐low‐power high performance amplifier without increasing power dissipation compared to the conventional one. Simulation results in 0.13‐µm complementary metal–oxide–semiconductor technology show the proposed structure achieves a 63‐dB DC gain at 0.25‐V supply voltage with just 20‐nW power dissipation. Copyright © 2016 John Wiley & Sons, Ltd.     

A common‐mode replica compensated inductor–capacitor voltage‐controlled oscillator for mixed‐signal system‐on‐chip applications

A novel 1.57 GHz complementary metal–oxide semiconductor inductor–capacitor voltage‐controlled oscillator with the common‐mode replica compensation is introduced for mixed‐signal system‐on‐chip applications. In order to alleviate power line disturbances, the center tap node of differential symmetric inductor and the replica biasing circuit are adopted in the differential voltage regulating unit to reduce power supply sensitivity. In addition, this proposed design also leads to low tuning gain and low power dissipation. The post‐layout simulation results under the Taiwan Semiconductor Manufacturing Company's mixed‐signal 0.18 µm 1P6M process show that the proposed design achieves power supply rejection of ?68.6 dB at low frequencies and 1.2 MHz/V pushing sensitivity. It exhibits phase noise of ?130.6 dBc/Hz at a 1 MHz offset from a 1.57 GHz carrier yet dissipates only 5.58 mW under a 1.8 V power supply. Copyright © 2011 John Wiley & Sons, Ltd.     

Analysis and implementation of a fourth‐order bandpass filter for R‐wave detection of an implantable cardiac microstimulator

This paper presents an ultra‐low‐power fourth‐order bandpass operational transconductance amplifier‐C (OTA‐C) filter for an implantable cardiac microstimulator used to detect the R‐wave of intracardiac electrograms. The OTA‐C filter fabricated by TSMC 0.35‐µm complementary metal–oxide–semiconductor (CMOS) technology is operated in the subthreshold region to save power under a supply voltage of 1 V. The current cancellation technique is adopted to reduce the transconductance of the amplifier. Through this, the low‐frequency OTA‐C filter can be realized by ultra‐low transconductance with on‐chip capacitors. Direct comparison to conventional RLC ladders replaced by OTA‐C circuits shows that the method of reducing the number of OTAs further diminishes power consumption. Design issues, including ultra‐low transconductance, linearity, and noise, are also discussed. Measurement results show that the low‐voltage, low‐power filter has a bandwidth between 10 and 50 Hz, third inter‐modulation distortion of ?40 dB, dynamic range of 43 dB, and power consumption of only 12 nW. The real electrocardiography signal is fed into the bandpass filter to verify the function of signal processing with the distribution of the R‐wave. Copyright © 2012 John Wiley & Sons, Ltd.     

A 10 b 25 MS/s 4.8 mW 0.13 µm CMOS ADC with switched‐bias power‐reduction techniques

This paper proposes a 10 b 25 MS/s 4.8 mW 0.13 µm CMOS analog‐to‐digital converter (ADC) for high‐performance portable wireless communication systems, such as digital video broadcasting, digital audio broadcasting, and digital multimedia broadcasting (DMB) systems, simultaneously requiring a low‐voltage, low‐power, and small chip area. A two‐stage pipeline architecture optimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate, while switched‐bias power‐reduction techniques reduce the power consumption of the power‐hungry analog amplifiers. Low‐noise reference currents and voltages are implemented on chip with optional off‐chip voltage references for low‐power system‐on‐a‐chip applications. An optional down‐sampling clock signal selects a sampling rate of 25 or 10 MS/s depending on applications in order to further reduce the power dissipation. The prototype ADC fabricated in a 0.13 µm 1P8M CMOS technology demonstrates a measured peak differential non‐linearity and integral non‐linearity within 0.42 LSB and 0.91 LSB and shows a maximum signal‐to‐noise‐and‐distortion ratio and spurious‐free dynamic range of 56 and 65 dB at all sampling frequencies up to 25 MHz, respectively. The ADC with an active die area of 0.8 mm² consumes 4.8 and 2.4 mW at 25 and 10 MS/s, respectively, with a 1.2 V supply. Copyright © 2008 John Wiley & Sons, Ltd.