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在分析元胞自动机-有限元(CAFE)法模拟凝固过程微观组织物理本质和数值计算方法的基础上,运用该法模拟了对流对凝固过程中的温度场、缩孔和疏松及微观组织的影响。模拟结果表明:该法可以实现铸件三维微观组织的模拟,模拟结果与实验吻合较好。对流可以起到均匀温度场的作用;对流对凝固过程中的补缩有一定的影响,使缩孔、疏松形貌不规则;对流可以细化铸件的微观组织。 相似文献
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《中国材料进展》2017,(12)
在合金凝固过程中施加时变电磁场,导电熔体在洛仑兹力的驱动下产生的强迫对流可有效控制合金溶质的再分配过程。在材料凝固与晶体生长过程中施加电磁场有助于深入研究其热物理性质、相平衡、亚稳态、组织形成、成分过冷和形核。人们对重力环境下合金的凝固过程已进行了大量深入详尽的实验探究,利用电磁场手段对凝固前沿进行有效干预并在晶体组织结构、成分偏析等方面取得了一定的进展。而微重力环境下浮力对流减少,为在宏观和微观尺度上获得成分更为均匀的半导体或合金材料提供了一个独特的平台,目前的研究表明在微重力环境下合金的凝固特征与在重力环境下的有所不同。从理论与实验的角度阐释了在微重力及重力环境下电磁场引起的强迫对流强度及方向对晶体生长过程中的宏观偏析、微观偏析、晶体形态以及金属间化合物的生长模式及空间分布的影响规律。 相似文献
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垂直布里奇曼法CdZnTe晶体生长过程的数值分析 总被引:4,自引:0,他引:4
模拟计算了半导体材料CdZnTe布里奇曼法单晶体生长过程,分析了熔体的过热温度、坩埚侧面强化换热以及坩埚加速旋转(ACRT)等因素对结晶界面的形态和晶体组分偏析的影响。结果表明:当熔体的过热温度减小时,熔体中自然对流的强度显著降低,固液界面的凹陷深度有所增加,晶体的轴向等浓度区显著加长,而晶体组分的径向偏析明显增大,坩埚的侧面强化换热增加了自然对流强度,也增大了固液界面的凹陷,但是对溶质成分的偏析影响较小,坩埚加速旋转引起的强迫对流强度远大于自然对流,显著增大了固液界面的凹陷,使熔体中的溶质分布成为均一的浓度场,显著减小了晶体组分的径向偏析,增加了晶体组分的轴向偏析。 相似文献
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采用扩散支配相变动力学方法对Fe-Bi-Mn系易切削合金侧向快速凝固过程进行数值研究。建立对流扩散-多相相变体系三维凝固模型,考虑固、液、气三相扩散流动相变对合金凝固的影响,模拟研究合金中MnS和Bi(易切削相)的柱状晶/等轴晶形成过程。结果表明:合金凝固过程中MnS和Bi的柱状晶/等轴晶形成模式强烈受对流扩散和多相相变影响;对流扩散为正值处,溶质的多相质量相变速率较大且富集程度较低,流动稳定易形成柱状晶;对流扩散为负值处,溶质的多相质量相变速率较小且富集程度较高,当晶尖处溶质富集到一定程度,对流扩散与多相相变产生的紊流使柱状晶尖端断裂,成为等轴晶形核中心,此处为等轴晶稳定形成区域。 相似文献
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金属熔体电磁成形过程研究 总被引:1,自引:0,他引:1
以制备无污染的航空发动机叶片为背景 ,分析了金属熔体电磁成形定向凝固技术的原理 ,并以铝合金及 1Cr1 8Ni9Ti为研究材料 ,探讨了交流电磁场作用下金属熔体的感应加热熔化及约束成形过程 ,结果表明 :感应器结构决定其内部的磁场及电磁压力分布 ,感应器输入功率、熔体高度、上下液固界面位置、抽拉速度及冷却条件等参数综合影响金属加热熔化特性、熔体形状及其稳定性 ;通过控制合理的工艺参数 ,获得了截面为圆形及近似弯月面形、表面质量和内部定向组织良好的样件 . 相似文献
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目的 研究强磁场下Cu-50%(质量分数)Ag合金定向凝固过程中的组织演变、固液界面形貌变化及溶质迁移行为,分析强磁场对金属凝固过程的作用机制,为强磁场下的金属材料制备提供理论借鉴和指导。方法 在不同的凝固速率与磁场条件下进行定向凝固和淬火实验,对合金的定向凝固组织、糊状区与固液界面形貌以及溶质分布行为进行考察。结果 强磁场破坏了凝固组织的定向生长,使凝固组织转变为枝晶与等轴晶共存的形貌;强磁场诱发了熔体对流,减少了糊状区中溶质的含量;强磁场改变了固液界面处的溶质分布和固液界面形貌,破坏了固液界面的稳定性。结论 强磁场通过洛伦兹力和热电磁力的共同作用,诱发了糊状区内液相的纵向环流,改变了固液界面及糊状区中的组织形貌与元素分布。 相似文献
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目的 为了避免铝合金盖板低压铸造过程产生的缩孔缺陷,对盖板结构进行分析。方法 采用数值分析技术,对盖板低压铸造过程进行数值模拟,将模拟结果与实际铸件缺陷进行对比,分析缩孔缺陷的产生原因。为消除铸件缩孔缺陷,在模具内增设冷却水道,并对该工艺进行模拟分析。结果 铸件凝固过程中,当合金固相率达到75%时,铸件特征位置处的补缩通道开始陆续关闭,形成了孤立液相区,导致凝固结束时形成缩孔缺陷。当模具内增设冷却水道后,铸件的缩孔体积分数由3.5%下降到0.8%。结论 通过在模具内增设合理的冷却水道,能加快铸件厚大部位的凝固速度,有利于实现顺序凝固,从而避免缩孔缺陷,提高铸件质量。 相似文献
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A formation mechanism of a silicon hollow sphere via electromagnetic levitation method under high static magnetic field in hydrogen atmosphere is discussed in this paper. Since the convection in the levitated silicon melt which is caused by the electromagnetic field is restrained by a high static magnetic field, it is possible to examine a solidification of silicon from an equilibrium silicon melt with hydrogen except an effect of convection. The solidified silicon sphere has an extrusion which is formed during the solidification due to reduced stress in the melt. When a nucleation of pore occurs before the formation of the extrusion, a silicon hollow sphere is formed. Since the chance to form the nucleation of pore increases with increasing hydrogen concentration in the melt, a silicon hollow sphere is formed when the solidification is performed in higher hydrogen partial pressure. In the present case, a silicon hollow sphere is formed by the solidification in 50%H2–50%Ar atmosphere. However, non-porous silicon spheres are formed by the solidification in 25%H2–75%Ar or 100%Ar atmosphere. 相似文献
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目的 研究电磁搅拌对CoCrMo合金熔模铸件晶粒尺寸的影响,解决熔模铸造CoCrMo合金铸件晶粒粗大的问题。方法 将CoCrMo合金熔化后,在其凝固过程中分别施加不同工艺参数的电磁搅拌,并对其凝固后的组织进行表征分析。同时,采用有限元法对电磁搅拌在金属熔体中的电磁场和流场进行数值模拟。结果 在不同的电磁搅拌参数下,CoCrMo合金铸件凝固组织出现了不同程度的细晶效果,浇道处的细晶效果优于铸件试棒处的。铸件试棒处的晶粒尺寸最小能控制在1 mm以下,等轴晶率最高能提升至31%。数值模拟结果表明,在电磁搅拌过程中,铸件试棒的磁场、电流和洛伦兹力都呈周期性变化,铸件试棒内部的流速随搅拌时间的延长而增大,最后趋于稳定。结论 电磁搅拌对CoCrMo合金的凝固组织产生了明显的细化效果,促进了柱状晶向等轴晶转变。电磁搅拌的时间越长,铸件凝固组织的细化效果越好,铸件厚大部位的细晶效果越显著。结合实验结果和数值模拟结果发现,在电磁搅拌过程中,熔体流动引发枝晶断裂是晶粒细化的主要原因,而电磁场促进异质形核为次要原因。 相似文献
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《Materials Science & Technology》2013,29(3):684-692
The comprehensive three-dimensional mathematical model proposed in Part 1 is used to investigate the effect of rotating electromagnetic stirring on the solidification process of copper hollow billet during horizontal continuous casting. In this part, the model is used to investigate the effects of electromagnetic parameters and casting speed on the electromagnetic field, temperature field, fluid flow and solidification during the horizontal continuous casting with rotating electromagnetic stirring. The results show that electromagnetic frequency, current intensity and casting speed have significant influence on the tangential velocity, temperature gradient, liquid fraction and sump depth. 相似文献
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Heat and mass transfer during crystal growth 总被引:2,自引:0,他引:2
Quality of semiconductor and oxide crystals which are grown from the melts plays an important role for electronic and/or optical devices. The crystal quality is significantly affected by the heat and mass transfer in the melts during crystal growth in a growth furnace such as Czochralski or horizontal Bridgman methods. This paper reviews the present understanding of phenomena of the heat and mass transfer of the melts, especially instability of melt convection from the detailed numerical calculation, which helps to understand the melt convection visualized using X-ray radiography. Large scale simulation of melt convection during crystal growth is also reviewed.
Characteristics of flow instabilities of melt convection with a low Prandtl number (ratio between momentum and thermal diffusivities) are also reviewed by focusing on the instabilities of baroclinic, the Rayleigh-Benard and the Marangoni-Benard, from the points of view of temperature, rotating and/or magnetic field effects during crystal growth. Oxygen concentration in grown crystals is also discussed how melt convection affects. 相似文献
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Uniform and regular pattern structure array were fabricated on carbon (20 nm) /AgInSbTe (200 nm) / glass film by laser direct-writing technology with green and blue laser, respectively. The focused ion beam was used to mill the patterned structures to obtain the morphology inside the structures. The microscopy results indicate that the interior of the structure is hollow and the material is resolidified. Many shrinkage cavities and pores, the main characteristics of rapid solidification, were found inside the structures. The strong convection flow from the center of the molten pool to its periphery was the main cause of microbump formation. Material volume expansion from solid to liquid, and even to gas, also contributed to bump formation. 相似文献