ZnBO-doped (Ba, Sr)TiO3 ceramics for the low-temperature sintering process

ZnBO-doped (Ba, Sr)TiO₃ ceramics were investigated for low-temperature co-fired ceramics (LTCCs) applications. Until now, B₂O₃ and Li₂CO₃ dopants have been commonly employed as the low-temperature sintering aids. In this paper, we suggest ZnBO as an alternative dopant to the B₂O₃ and Li₂CO₃. To reduce the sintering temperature of (Ba, Sr)TiO₃, we have added 1–5 wt.% of ZnBO to (Ba, Sr)TiO₃. ZnBO-doped (Ba, Sr)TiO₃ ceramics were respectively sintered from 750 to 1350 °C by 50 °C to confirm the sintering temperature with different dopant contents. By adding 5 wt.% of ZnBO to the (Ba, Sr)TiO₃ ceramics, the sintering temperature of (Ba, Sr)TiO₃ ceramics can be reduced to 1100 °C. From the XRD analysis, ZnBO-doped (Ba, Sr)TiO₃ has no pyro phase. By adding ZnBO dopants to (Ba, Sr)TiO₃ ceramics, both of relative dielectric permittivity and loss tangent were decreased. From the frequency dispersion of dielectric properties, the relative dielectric permittivity and loss tangent of 5 wt.% ZnBO-doped (Ba, Sr)TiO₃ were 1180 and 3.3 × 10⁻³, while those of BST were 1585 and 4.8 × 10⁻³, respectively.     

Low Dielectric Loss and Good Dielectric Thermal Stability of xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 Thin Films Fabricated by Sol–Gel Method

xNd(Zn_1/2Ti_1/2)O₃–(1?x)Ba_0.6Sr_0.4TiO₃ (xNZT–BST) thin films were fabricated on Pt/Ti/SiO₂/Si substrates by sol–gel method with x = 0, 3%, 6%, and 10%. The structures, surface morphology, dielectric and ferroelectric properties, and thermal stability of xNZT–BST thin films were investigated as a function of NZT content. It was observed that the introduction of NZT into BST decreased grain size, dielectric constant, ferroelectricity, tunability, and significantly improved dielectric loss and dielectric thermal stability. The corresponding reasons were discussed. The 10%NZT–BST thin film exhibited the least dielectric loss of 0.005 and the lowest temperature coefficient of permittivity (TCP) of 3.2 × 10^?3/°C. In addition, the figure of merit (FOM) of xNZT–BST (x = 3%, 6%, and 10%) films was higher than that of pure BST film. Our results showed that the introduction of appropriate NZT into BST could modify the dielectric quality of BST thin films with good thermal stability. Especially for the 3%NZT–BST thin film, it showed the highest FOM of 33.58 for its appropriate tunability of 32.87% and low dielectric loss of 0.0098.     

Microstructure,colossal permittivity,and humidity sensitivity of (Na,Nb) co-doped rutile TiO2 ceramics

(Na_0.25Nb_0.75)_xTi_1−xO₂ (NNTO) ceramics (x = 0, 0.005, 0.01, 0.02, and 0.05) were prepared by the conventional solid-state reaction. The microstructure, dielectric, and humidity sensitivity of the ceramics were systematically investigated. Results showed that all ceramics exhibit pure rutile TiO₂ phase with dense microstructures. Co-doping of (Na, Nb) can effectively improve the microstructure homogeneity of the ceramics. When the doping level x ≥ 0.01, the co-doped samples show colossal permittivity higher than 10⁴ and dielectric loss tangent lower than 0.38. This dielectric behavior features the merit of both frequency and temperature stability in the range of 10²-10⁶ Hz and 100-300 K, respectively. The co-doped ceramics were found to be sensitive to the environment moisture. The humidity sensitivity incurs a Maxwell-Wagner relaxation near room temperature, which further enhances the dielectric permittivity. Excellent humidity sensitive properties of sensitivity to be 102.6 pF/%RH, response/recovery time to be 115/20 seconds, as well as good repeatability, were achieved in the sample with the doping level x = 0.05. This work underscores that the room temperature dielectric properties of doubly doped TiO₂ system depends strongly on the environmental condition and suggests that the (Na + Nb) co-doped TiO₂ ceramics might be promising humidity sensing materials.     

Zirconium Incorporation into CaTiO3 Perovskite Prepared from Xerogels and Implication for the Fate of (Ca,Sr)TiO3 Nuclear Waste Ceramics

CaTiO₃ perovskite has been proposed as a ceramic waste form for immobilization of ⁹⁰Sr. Nonradioactive coprecipitated xerogel powders with nominal atomic ratios of Ca:Zr:Ti = 0.75:0.25:1.00 were synthesized to mimic the fate of (Ca_0.75⁹⁰Sr_0.25)TiO₃ solid solution after complete decay of the Sr and its intermediate product Y to stable Zr when an excess B⁴⁺ (Ti and ⁹⁰Zr) cations will present. Ca:Ti = 1.00:1.00 samples were used as a reference. The powders were heated to various conditions to explore the thermodynamic stability of its oxides. The heated Ca:Zr:Ti = 0.75:0.25:1.00 samples formed a major orthorhombic Ca(Zr_1?xTi_x)O₃ perovskite phase. The Ti/(Ti + Zr) ratio of the perovskite preserves its nominal ratio at 600°C. The Zr rejects from the Ca(Zr_1?xTi_x)O₃ with further increasing the temperature, following the formation of Ca–Ti–Zr–O secondary phases. This study indicates a tendency of the Zr to segregate from an original (Ca,Sr)TiO₃ waste form when the stoichiometry is controlled by the conversion of Sr to Zr (in normal oxidation states).     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Phase content and dielectrical properties of sintered BaSrTiO ceramics prepared by a high temperature hydrothermal technique

Ba_xSr_1−xTiO₃ ceramic powders with varying barium content were prepared by a high temperature hydrothermal technique and sintered at 1300 °C for 1–8 h. Their dielectrical, phase and structural properties were investigated. It was computed from the XRD spectra that the samples with a small amount of strontium, no more than 10% of the initial Ba:Sr share, had a single phase structure with x = 0.77–0.79 and Curie point T_c = 37–53 °C. Samples with a higher initial Sr ratio developed a two-phase structure and two Curie points. T_c(x) dependence showed that all the experimental data followed a linear trend and were close to the values obtained from the conventional solid state technique, while the dielectric constant was almost one order of magnitude smaller.     

Effects of vacancy defects caused by non-stoichiometric ratio on dielectric properties of ABO3 perovskite (Ba0.5Sr0.5)xTiO3 ceramics

Non-stoichiometric Ba_0.5Sr_0.5TiO₃ (BST50) ceramics with varying A/B ratios, namely (Ba + Sr)/Ti, were prepared by a conventional solid-state reaction approach. The effects of vacancy defects caused by varying the A/B ratio on the structure and dielectric properties of BST50 ceramics were systematically investigated. A remarkable change in grain size was found when the A/B ratio was increased, which led to apparent variations in the dielectric properties of the BST50 ceramics. The Curie temperature (T_c) and dielectric permittivity peak (ε_max) increased first and then decreased with increasing A/B ratio, and reached the maximum at A/B = 1. Simultaneously, the dielectric diffusion parameter of BST50 ceramics was studied by the Lorenz-type formula. All samples exhibited diffusion phase transition behavior, and T_c was frequency independence. When A/B < 1, the Q value remained at a high level; in contrast, when A/B > 1, the Q value was significantly reduced. For this BST50 system, high tunability of 24.95% (at 30 kV/cm), low dielectric loss of 0.0017 (at 10 kHz), and high figure of merit (FOM) of 147 were achieved simultaneously at A/B = 1.01.     

Nanocrystalline Barium Strontium Titanate Ceramics Synthesized via the “Organosol” Route and Spark Plasma Sintering

Dense nanocrystalline barium strontium titanate Ba_0.6Sr_0.4TiO₃ (BST) ceramics with an average grain size around 40 nm and very small dispersion were obtained by spark plasma sintering at 950°C and 1050°C starting from nonagglomerated nanopowders (~20 nm). The powders were synthesized by a modified “Organosol” process. X‐ray diffraction (XRD) and dielectric measurements in the temperature range 173–313 K were used to investigate the evolution of crystal structure and the ferroelectric to paraelectric phase transformation behavior for the sintered BST ceramics with different grain sizes. The Curie temperature T_C decreases, whereas the phase transition becomes diffuse for the particle size decreasing from about 190 to 40 nm with matching XRD and permittivity data. Even the ceramics with an average grain size as small as 40 nm show the transition into the ferroelectric state. The dielectric permittivity ε shows relatively good thermal stability over a wide temperature range. The dielectric losses are smaller than 2%–4% in the frequency range of 100 Hz–1 MHz and temperature interval 160–320 K. A decrease in the dielectric permittivity in nanocrystalline ceramics was observed compared to submicrometer‐sized ceramics.     

Effect of A-site substitutions on energy storage properties of BaTiO3-BiScO3 weakly coupled relaxor ferroelectrics

Weakly coupled relaxors based on compositions (1-x) BaTiO₃-xBiMeO₃, where Me is a metal ion, have attracted attention as potential candidates for high-temperature high-energy density capacitors. However, the necessary Bi content is typically high with x = 0.3-0.4. In order to reduce problems associated with compatibility for base metal electrodes and due to additional problems due to Bi volatility, it is desirable to lower the Bi content in the overall composition for these materials. Here, we have explored a possible way to reduce BiMeO₃ content through additional A-site substitutions viz. Ca and Sn. The relaxor nature and energy storage properties of Sn-modified (Ba,Ca)(Ti)O₃-BiScO₃ ceramics were determined from their dielectric and ferroelectric behaviors. The material showed attractive properties in terms of a frequency-independent (200 Hz-1 MHz) dielectric response from room temperature to 200°C, extremely low loss and high-energy storage efficiency. The structural phenomena underlying the functional properties of Sn-modified (Ba,Ca)TiO₃-BiScO₃ are characterized from temperature-dependent X-ray diffraction and pair distribution function analysis. In broader terms, the study illustrates the potential for tailoring relaxor behavior in Pb-free ferroelectrics by combining phenomena, such as quantum fluctuations and lone pair stereochemical effect associated with different solid-solution substitutions.     

Intrinsic correlation between structure,vibration spectrum and microwave dielectric properties of ferroelectric-dielectric composite ceramics

A novel series of (1-x)Ba_0.45Sr_0.55TiO₃-xMgGa₂O₄ (x = 0, 10, 30, 50, 70 wt%) ceramics was prepared by a solid-state method to investigate the relationship between their dielectric properties and ion diffusion, composition effect, and lattice vibration. XRD refinement and DFT calculations of Ba_0.45Sr_0.55TiO₃ (BST45) revealed that the substitution of Ga³⁺ and Mg²⁺, both of which have small polarizability for Ti⁴⁺, reached the saturation state at x = 10 wt%, thus decreasing the quality factor (Q value). In contrast, the addition of MgGa₂O₄ (MG) with x > 10 wt% significantly reduced the relative permittivity and improved the Q value owing to the compositional effect. The vibration spectra (Raman and FT-IR) confirmed that the Q value initially decreased owing to ion diffusion at x < 10 wt% and then increased with increasing MG content according to the composition effect. Therefore, the Q value was remarkably improved in the Ba_0.45Sr_0.55TiO₃-MgGa₂O₄ composites, with good tunability and low relative permittivity.     

Influence of Se and Te substitutions at Tl-site of Tl(Ba,Sr)CaCu2O7 superconductor on the AC susceptibility and electrical properties

The Sr and Ba bearing Tl-1212 phase, Tl(Ba,Sr)CaCu₂O₇ is an interesting superconductor. The Sr only bearing TlSr₂CaCu₂O₇ is not easily prepared in the superconducting form. The Ba only bearing TlBa₂CaCu₂O₇ on the other hand does not show improvement in the transition temperature with elemental substitution. In this work the influence of multivalent Se (non-metal) and Te (metalloid) substitutions at the Tl-site of Tl_1-xM_x(Ba,Sr)CaCu₂O₇ (M = Se or Te) superconductors for x = 0–0.6 was studied. The samples were prepared via the conventional solid-state reaction method. XRD patterns showed a single Tl-1212 phase for x = 0 and 0.1 Se substituted samples. The critical current density at the peak temperature, T_p of the imaginary (χ”) part of the AC susceptibility (χ = χ’ +χ”), J_c-inter(T_p) for all samples was between 15 and 21 A cm⁻². The highest superconducting transition temperature was shown by the x = 0.3 Se-substituted sample (T_c-onset = 104 K, T_c-zero = 89 K, T_cχ’ = 104 K and T_p = 80 K). Te suppressed the superconductivity of Tl-1212 phase. The order of highest transition temperatures are as follows: Tl_1-xTe_x(Ba,Sr)CaCu₂O₇<Tl(Ba,Sr)CaCu₂O₇<Tl_1-xSe_x(Ba,Sr)CaCu₂O₇. This work showed that Se was better than Te in improving the transition temperature and flux pinning of the Tl-1212 phase. The roles of ionic radius of Se and Te on the superconductivity of Tl(Ba,Sr)CaCu₂O₇ are discussed in this paper.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Low‐Temperature Sintering and Microwave Dielectric Properties of ZnNb2O6–TiO2 Ceramics with BaCu(B2O5) Additions

The influence of BaCu(B₂O₅) (BCB) on densification, phases, microstructure and microwave dielectric properties of ZnNb₂O₆–xTiO₂ (x = 1.70–1.90) composite ceramics have been investigated. Undoped ZnNb₂O₆–1.8TiO₂ ceramics sintered at 1200°C exhibit temperature coefficient of resonant frequency (τ_f) ~9.25 ppm/°C. When BaCu(B₂O₅) was added, the sintering temperature of the ZnNb₂O₆–1.8TiO₂ composite ceramics was effectively reduced to 950°C. The results indicated that the permittivity and Q × f were dependent on the sintering temperature and the amounts of BaCu(B₂O₅). Addition of 3.0 wt% BaCu(B₂O₅) in ZnNb₂O₆–1.8TiO₂ ceramics sintered at 950°C showed excellent dielectric properties of ε_r = 40.9, Q × f = 12,200 GHz (f = 5.015 GHz) and τ_f = +0.3 ppm/°C.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Effect of ionic radius on colossal permittivity properties of (A,Ta) co-doped TiO2 (A= alkaline-earth ions) ceramics

(A, B) co-doped TiO₂ ceramics attract great interests due to the excellent dielectric properties. In this work, the (A, Ta) co-doped TiO₂ ceramics were prepared by a solid state reaction process. The effect of the acceptors ionic radius on the structure and properties of TiO₂ ceramics was investigated. According to XRD analysis, the main phase is rutile TiO₂ for all samples. Due to the larger ionic radius, it is hard to replace Ti site in TiO₆ octahedron. As a result, the content of the secondary phase increased with increasing ionic radius. The dielectric properties were significantly enhanced by co-doping of alkaline-earth ions and tantalum ions, and the best dielectric constant obtained at 3% (Sr, Ta) co-doped compositions, where ε’ = 2.1 × 10⁵, tanδ = 0.21. Meanwhile, the XPS analysis suggested that the concentration of the defect dipoles exhibit a maximum in Sr-doped TiO₂ ceramics. The larger ionic radius of the acceptors leads to the more stability of the defect structure. However, for Ba ions, the replacement concentration decreased due to the excessive ionic radius, which in turn reduces the defect concentration. This work is meaningful for the further investigations on TiO₂-based colossal permittivity materials.     

Enhanced structural,dielectric, ferroelectric,and piezoelectric properties of (1−x)Ba0.9Sr0.1TiO3–(x)Ba0.7Ca0.3TiO3 ceramics derived using mechano‐chemical activation technique

The effect of Ba_0.7Ca_0.3TiO₃ (BCT) substitution on the structural, dielectric, ferroelectric, and piezoelectric properties of mechano‐chemically synthesized lead‐free (1?x)Ba_0.9Sr_0.1TiO₃‐(x)Ba_0.7Ca_0.3TiO₃ (x=0.0, 0.10, 0.20, 0.35, and 0.50) ceramics have been investigated. XRD patterns confirms the formation of tetragonal phase with P4mm space group. The results indicate a strong influence of BCT substitution on the structural and electrical properties of Ba_0.9Sr_0.1TiO₃ (BST) ceramic. BST–BCT ceramic for x=0.35 have shown high dielectric constant ε_m~21 800, high remnant polarization P_r~10.16 μC/cm², large piezoelectric charge constant D₃₃~293 pC/N, large piezoelectric voltage constant g₃₃~5.80 mV·m/N, and highest dielectric breakdown strength E_bd~224 kV/cm among the five synthesized samples. The correlation between structural, dielectric, ferroelectric, and piezoelectric properties of the BST ceramic with increasing BCT content have been systematically described on the basis of domain wall motion and grain size effect.     

Phase transition,microstructure and electrical properties of Fe doped Ba0.70Ca0.30TiO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics of Ba_0.70Ca_0.30Ti_1?xFe_xO₃ (x=0–0.03) have been synthesized by a conventional solid state reaction method. The influence of Fe content on the microstructure, phase transition, dielectric, ferroelectric, and piezoelectric properties is investigated systematically. The ceramics with x≤0.02 are diphasic composites of tetragonal Ba_0.80Ca_0.20TiO₃:Fe and orthorhombic Ba_0.07Ca_0.93TiO₃:Fe solid solutions. The tetragonal phase is gradually suppressed as x increases, the ceramic with x=0.03 is found to have diphasic pseudocubic and orthorhombic phases. And the grain size is dependent on Fe content significantly. Introduction of Fe at B-sites improves the densification and decreases the sintering temperature. As x increases from 0 to 0.03, the room temperature relative dielectric permittivity enhances, dielectric loss decreases, and the Curie temperature decreases monotonically from 128 °C to 58 °C. However, the ferroelectricity enhances slightly and reaches the maximum near x=0.005, and then weakens with increasing x. On the other hand, the piezoelectric coefficient (d₃₃) and the electromechanical coupling coefficient (k_p) decrease simultaneously with increasing x, whereas the mechanical quality factor (Q_m) increases significantly. The structure–electrical properties relationship is discussed intensively to give more information on (Ba,Ca)TiO₃-based lead-free piezoelectric ceramics.     

Enhanced Piezoelectric Properties of (Ba1−xCax)(Ti0.92Sn0.08)O3 Lead‐Free Ceramics

(Ba_1?xCa_x)(Ti_0.92Sn_0.08)O₃ (x = 0.00–0.06 mol) ceramics with a high relative density over 96% were prepared by a conventional sintering method at 1480°C. At room temperature, a polymorphic phase transition from orthorhombic phase to tetragonal phase was confirmed by the XRD patterns in the composition range of 0.04 ≤ x ≤ 0.06. A high piezoelectric coefficient d₃₃ up to 568 pC/N was obtained at x = 0.05 mol, which is higher than the other component of (Ba,Ca)(Ti,Sn)O₃ system. At the same time, the corresponding planar electromechanical coupling factor k_p, converse piezoelectric coefficient dS/dE, and dielectric constant ε_r reach 47.7%, 1013 pm/V, and 23000, respectively. These results indicate that the (Ba,Ca)(Ti,Sn)O₃ ceramics are a promising candidate to replace for the lead‐based piezoelectric materials.     

Improvement of microwave dielectric properties of the LiNb0.6Ti0.5O3 M-phase by doping with (Co1/3Nb2/3)4+

Structural evolution and microwave dielectric properties of LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ (.05≤x≤.2) ceramics have been studied in this paper. Although the doped compositions maintain the M-phase solid solutions, compositional fluctuation due to nonuniform dispersion of minor dopants could be observed as x < .05, and trace amount of Li₂TiO₃-based solid solution (Li₂TiO₃ss) secondary phase presents in the x > .05 compositions. The microwave dielectric properties could be remarkably improved by the doping of (Co_1/2Nb_1/2)⁴⁺ in comparison to the undoped counterpart. Optimized microwave dielectric properties with Q × f = ∼6500 GHz, ε_r = ∼74 and τ_f = +8.2 ppm/°C could be obtained at x = .10 after sintering at 1050°C/2 h. The sintering temperature could be further reduced to 900°C/2 h by adding .2 wt% B₂O₃ without affecting significantly its microwave dielectric properties: ε_r = 73, Q × f = 6000 GHz, τ_f = +8.5 ppm/°C. The LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ ceramics obtained in this case exhibit large dielectric permittivity coupled with much improved Q × f values, near zero τ_f, and low sintering temperature simultaneously, which makes it a promising high-k microwave dielectric material for low temperature cofired ceramic applications.     

Preparation of La1?x Sr x CoO3 Oxide Electrode Material and its Influence on the Structure and Dielectric Performance of the Supported Ba1?x Sr x TiO3 Thin Films

Using the sol–gel method, La_1−x Sr _x CoO₃ (LSCO) electrode films were first fabricated on the Si (100) substrates, followed by the growth of Ba_1−x Sr _x TiO₃ (BST) thin films on the LSCO electrode film. The crystal structure and surface morphology of these films were characterized by XRD and SEM. The effects of Sr-doping and annealing temperature on the structure and electric resistivity of the LSCO films and the dielectric properties of the BST films were studied. Results show that the La_0.5Sr_0.5CoO₃ electrode annealed at 750 °C has the lowest electric resistivity, 1.1 × 10⁻³Ω cm. The relative permittivity of the La_0.5Sr_0.5CoO₃-supported BST films first increases and then decreases with Sr-doping. The relative permittivity of the BST film decreases while the dielectric loss increases with frequency. Among the studied BST films, Ba_0.5Sr_0.5TiO₃ has the largest relative permittivity and the smallest dielectric loss (95 and 0.1, respectively) when the frequency is 1 kHz.