Boosting the thermoelectric performance of Bi2O2Se by isovalent doping

N‐type Bi₂O₂Se has a bright prospect for mid‐temperature thermoelectric applications on account of the intrinsically low thermal conductivity. However, the low carrier concentration of Bi₂O₂Se (~10¹⁵ cm^?3) severely limits its thermoelectric performance. Herein, the boosting of the carrier concentration to ~10¹⁹ cm^?3 can be realized in our La‐doped Bi₂O₂Se ceramic samples, which could be ascribed to the formation of isoelectronic traps and the narrowing of band gap, and contribute to a marked increase in the electrical conductivity (from 0.03 S cm^?1 to 182 S cm^?1). Our X‐ray absorption near‐edge structure spectra results reveal that a local disordering of oxygen atoms could be an important reason for the intrinsically low thermal conductivity of Bi₂O₂Se, and the point defects can also suppress the lattice thermal conductivity in La‐doped Bi₂O₂Se. The ZT value can be enhanced by a factor of ~4.5 to 0.35 at 823 K for Bi_1.98La_0.02O₂Se as compared to the pristine Bi₂O₂Se. The coordinated optimization of electrical and thermal properties demonstrates an effective method for the rational design of high‐performance thermoelectric materials.     

Carrier concentration optimization for thermoelectric performance enhancement in n-type Bi2O2Se

The Bi₂O₂Se-based compounds with an intrinsically low thermal conductivity and relatively high Seebeck coefficient are good candidates for thermoelectric application. However, the low electrical conductivity resulted from carrier concentration of only 10¹⁵?cm^?3 for pristine material, which is too low for optimized thermoelectrics. As a result, the carrier concentration optimization of Bi₂O₂Se is important and useful to achieve higher power factor. In this work, the effect of Ge-doping at the Bi site has been investigated systematically, with expectations of carrier concentration optimization. It is found that Ge doping is an efficient method to increase carrier concentration. Due to the largely increased carrier concentration via Ge doping, the room temperature electrical conductivity rises rapidly from 0.03?S/cm in pristine sample to 133?S/cm in x?=?0.08 sample. Combined with the intrinsically low thermal conductivity, a maximum ZT value of 0.30 has been achieved at 823?K for Bi_1.92Ge_0.08O₂Se, which is the highest ZT value for Bi₂O₂Se-based thermoelectric materials.     

Synergistically optimizing electrical and thermal transport properties of Bi2O2Se ceramics by Te‐substitution

Bi₂O₂Se oxyselenides, characterized with intrinsically low lattice thermal conductivity and large Seebeck coefficient, are potential n‐type thermoelectric material in the mediate temperature range. Given the low carrier concentration of ~10¹⁵ cm^?3 at 300 K, the intrinsically low electrical conductivity actually hinders further enhancement of their thermoelectric performance. In this work, the isovalent Te‐substitution of Se plays an effective role in narrowing the band gap, which notably increases the carrier concentration to ~10¹⁸ cm^?3 at 300 K and the electron conduction activation energy has been lowered significantly from 0.33 to 0.14 eV. As a consequence, the power factor has been improved from 104 μW·K^?2·m^?1 for pristine Bi₂O₂Se to 297 μW·K^?2·m^?1 for Bi₂O₂Se_0.96Te_0.04 at 823 K. Meanwhile, the suppressed lattice thermal conductivity derives from the introduced point defects by heavier Te atoms. The gradually decreased phonon mean free path reflects the increasingly intense phonon scattering. Ultimately, the ZT value attains 0.28 for Bi₂O₂Se_0.96Te_0.04 at 823 K, an enhancement by a factor of ~2 as compared to that of pristine Bi₂O₂Se. This study has demonstrated that Te‐substitution of Se could synergistically optimize the electrical and thermal properties thus effectively enhancing the thermoelectric performance of Bi₂O₂Se.     

Enhanced thermoelectric performance of n‐type Bi2O2Se by Cl‐doping at Se site

The n‐type polycrystalline Bi₂O₂Se_1?xCl_x (0≤x≤0.04) samples were fabricated through solid‐state reaction followed by spark plasma sintering. The carrier concentration was markedly increased to 1.38×10²⁰ cm^?3 by 1.5% Cl doping. The maximum electrical conductivity is 213.0 S/cm for x=0.015 at 823 K, which is much larger than 6.2 S/cm for pristine Bi₂O₂Se. Furthermore, the considerable enhancement of the electrical conductivity outweighs the moderate reduction of the Seebeck coefficient by Cl doping, thus contributing to a high power factor of 244.40 μ·WK^?2·m^?1 at 823 K. Coupled with the intrinsically suppressed thermal conductivity originating from the low velocity of sound and Young's modulus, a ZT of 0.23 at 823 K for Bi₂O₂Se_0.985Cl_0.015 was achieved, which is almost threefold the value attained in pristine Bi₂O₂Se. It reveals that Se‐site doping can be an effective strategy for improving the thermoelectric performance of the layered Bi₂O₂Se bulks.     

Effects of sulfur substitution for oxygen on the thermoelectric properties of Bi2O2Se

In the present work, the thermoelectric properties of S-doped Bi₂O_2-xS_xSe at the temperatures from 320 to 793 K have been studied. The results show that the solubility limit of S is around x = 0.01 and S-doping is helpful to the sintering and grain growth of Bi₂O₂Se. Moreover, S-doping reduces the band gap of Bi₂O_2-xS_xSe remarkably as x rises. As a result, a thousand times promotion of electrical conductivity at x = 0.02 is obtained, leading to a nearly 3 times increase of power factor at 787 K. By virtue of the intrinsically low thermal conductivity, a peak ZT of 0.29 at 793 K with an average of 0.21 has been achieved for Bi₂O_1.98S_0.02Se, which is nearly 3 and 6 times larger than that of the pristine one. This study indicates that a small amount of S substitution for O could improve the thermoelectric properties of Bi₂O₂Se effectively.     

Low thermal conductivity and thermoelectric properties of Si80Ge20 dispersed Bi2Sr2Co2Oy ceramics

Bi₂Sr₂Co₂O_y is a thermoelectric material with low thermal conductivity. The Bi₂Sr₂Co₂O_y/Si₈₀Ge₂₀ composite samples were prepared by solid phase sintering at high temperature to investigate the effects of Si₈₀Ge₂₀ alloys as the second phase on the microstructure and thermoelectric properties of the fabricated composites. An appropriate amount of the dispersed Si₈₀Ge₂₀ in the Bi₂Sr₂Co₂O_y matrix can reduce the resistivity of the composite successfully. In particular, the increase in phonon scattering caused by the second phase leads to a significant decrease in thermal conductivity, which improves the thermoelectric properties of the material significantly. At 923 K, the thermal conductivity of the Bi₂Sr₂Co₂O_y + 0.2 wt% Si₈₀Ge₂₀ sample achieves an ultralow value of 0.58 W/K·m. Its corresponding optimal dimensionless thermoelectric figure of merit value is 0.36, which is 56% higher than that of the pure Bi₂Sr₂Co₂O_y sample.     

Enhancing the thermoelectric power factor of nanostructured SnO2 via Bi substitution

Tin dioxide (SnO₂) has recently proved to be a promising material for thermoelectric applications. We have investigated the influence of highly valence Bi doping as an electron donor in oxygenated SnO₂ materials on their thermoelectric properties. We have synthesized the pure and Bi doped SnO₂ nanoparticles (x = 0%, 5%, 10%, and 15%) through a simple hydrothermal approach. The Seebeck coefficient and Hall measurements have been used to determine thermoelectric behaviour. The measured value of the Seebeck coefficient increases from - 56 to - 83 μV/^°C as the Bi content increases. This improvement in the Seebeck coefficient has been attributed to the charge carrier localization (energy filtering effect) caused by the inclusion of the bismuth atoms and the presence of secondary phases based on BiO₂. However, the electrical conductivity measurements show an inverse relation with the Bi doping, increasing the impurities. The Sn_1-xBi_xO₂ sample with x = 15 has achieved the maximum Seebeck value, resulting in the upward trend in power factor of up to 1.97 × 10^?4 Wm^?1C^?2. Further, we have used X-ray diffraction and scanning electron microscopy to determine the effect of Bi on the SnO₂ crystal structure and surface morphology. Which also demonstrates the presence of composites with mixed phases.     

Enhanced thermoelectric properties of CNT dispersed and Na-doped Bi2Ba2Co2Oy composites

The thermoelectric properties of Bi₂Ba₂Co₂O_y and Bi_1.975Na_0.025Ba₂Co₂O_y+x wt% carbon nanotubes (CNT; x=0.00, 0.05, 0.10, 0.15, 0.5, and 1.0) ceramic samples synthesised by the solid-state reaction method were investigated from 300K to 950K. Na doping with a small amount played an important role in reducing resistivity and slightly reduced the Seebeck coefficients and the thermal conductivity. The CNT dispersant increased resistivity, but the thermal conductivity was reduced remarkably. In particular, the Bi_1.975Na_0.025Ba₂Co₂O_y+1.0wt% CNT sample exhibited an ultralow thermal conductivity of 0.39 W K⁻¹ m⁻¹ at 923K. This was attributed to the point defects caused by Na doping and the interface scattering caused by the CNT dispersant. The combination of Na doping and CNT dispersion had better effects on thermoelectric properties. The Bi_1.975Na_0.025Ba₂Co₂O_y+0.5wt% CNT sample exhibited a better dimensionless figure of merit (ZT) value of 0.2 at 923K, which was improved by 78.2%, compared with the undoped Bi₂Ba₂Co₂O_y sample.     

Filtering low-energy carriers to enhance thermoelectric performance of Cd-doped SnSe via incorporation of MXene sheets

SnSe-based materials have attracted widespread attention in thermoelectrics due to their outstanding thermoelectric performance. However, the pristine and unmodified polycrystalline SnSe reveals poor electrical properties. Doping and constructing nanostructured composite architectures to produce energy filtering effect proved to be an effective method to strengthen thermoelectric performance. In this study, Ti₃C₂/Sn_0.98Cd_0.02Se composites are successfully fabricated by the solvothermal method combined with the electrostatic self-assembly method and spark plasma sintering. The phase interface introduced by incorporating Ti₃C₂ into Sn_0.98Cd_0.02Se can effectively filter low-energy carriers due to its generation of energy barriers, thereby the Seebeck coefficient of x wt% Ti₃C₂/Sn_0.98Cd_0.02Se x = (0.05, 0.5, 1) samples is better than that of the pristine Sn_0.98Cd_0.02Se over the whole temperature range. Meanwhile, high conductivity was also obtained in 1 wt% Ti₃C₂/Sn_0.98Cd_0.02Se sample so that the high power factor of 3.31 μWcm⁻¹K⁻² was acquired at 773 K. Ultimately, a peak ZT value of 0.41 was obtained at 773 K, compared with pristine Sn_0.98Cd_0.02Se, and the thermoelectric performance improved by 24%. This study offers an available approach to efficiently enhance the thermoelectric properties of polycrystalline SnSe-based materials.     

Substrate temperature-dependent thermoelectric figure of merit of nanocrystalline Bi2Te3 and Bi2Te2.7Se0.3 prepared using pulsed laser deposition supported by DFT study

This work reports the pulsed laser deposition of n-type selenium (Se) doped bismuth telluride (Bi₂Te_2.7Se_0.3) and n-type bismuth telluride (Bi₂Te₃) nanostructures under varying substrate temperatures. The influence of the substrate temperature during deposition on the structural, morphological and thermoelectric properties for each phase was investigated. Density functional theory (DFT) simulations were employed to study the electronic structures of the unit-cells of the compounds as well as their corresponding partial and total densities of states. Surface and structural characterization results revealed highly crystalline nanostructures with abundant grain boundaries. Systematic comparative analysis to determine the effect of Se inclusion into the Bi₂Te₃ matrix on the thermoelectric properties is highlighted. The dependence of the thermoelectric figure of merit (ZT) of the nanostructures on the substrate temperatures during deposition was demonstrated. The remarkable room temperature thermoelectric power factor (PF) of 2765 μW/mK² and 3179 μW/mK² for pure and Se-doped Bi₂Te₃ compounds respectively, signifies their potential of being useful in cooling and power generation purposes. The room temperature ZT values of the Se-doped Bi₂Te₃ was found to be 0.92, about 30% enhancement as compared with the pure phase, which evidently results from the suppressed thermal conductivity in the doped species caused by phonon scattering at the interfaces.     

Preparation and thermoelectric properties of MoS2/Bi2Te3 nanocomposites

MoS₂ nanosheets with size of several-hundred nanometers were prepared by a hydrothermal intercalation/exfoliation method, then MoS₂/Bi₂Te₃ composite nanopowders were prepared by a microwave-assisted wet chemical method using the MoS₂ nanosheets, TeO₂, Bi(NO₃)₃·5H₂O, KOH and ethylene glycol as raw materials. Bulk MoS₂/Bi₂Te₃ nanocomposites were prepared by hot pressing the MoS₂/Bi₂Te₃ composite nanopowders with MoS₂ nanosheet content ranging from 0 to 17 wt% at 80 MPa and 648 K in vacuum. X-ray photoelectron spectroscopy and X-ray diffraction analyses indicate that MoS₂ and Bi₂Te₃ did not react each other during the hot pressing. FESEM observation reveals that the MoS₂/Bi₂Te₃ composite samples had a more compact microstructure than the pristine Bi₂Te₃ bulk sample. The MoS₂ phase was relatively randomly dispersed in the composite. At a given temperature, the electrical conductivity of the composites increases first then decreases as the MoS₂ content increases, whereas the Seebeck coefficient of the bulk nanocomposites does not change much. A highest power factor, ~18.3 μW cm⁻¹ K⁻² which is about 30% higher than that of pristine Bi₂Te₃ sample, at 319 K has been achieved from a nanocomposite sample containing 6 wt% MoS₂.     

Sodium Doping Effects on Layered Cobaltate Bi2Sr2Co2Oy Thin Films

Highly c‐axis oriented Bi_2?xNa_xSr₂Co₂O_y (x = 0, 0.1, 0.2, 0.3) thin films were successfully deposited onto LaAlO₃ (0 0 1) single crystal substrates by the chemical solution deposition method. The Na‐doping effects on microstructures as well as transport and thermoelectric properties were investigated. The crystallite size normal to the thin film surface was decreased with Na doping, and the carrier concentration and mobility was enhanced and decreased, respectively. As for the transport properties, it is suggested that Na‐doping‐induced disorders play a more important role at low temperatures, while at the medium temperature the doping play a trivial role, at higher temperatures Na‐doping weakens the electron correlation. Combined with the transport properties and Seebeck coefficient results, it is suggested that the thermoelectric properties are mainly controlled by carrier concentration due to the hole doping in blocking layers. Power factor at 300 K was enhanced about 22% for the Bi_1.7Na_0.3Sr₂Co₂O_y thin film as compared with that of the undoped thin films, suggesting that Na doping at blocking layer in Bi₂Sr₂Co₂O_y was an effective route to enhance the thermoelectric power factor.     

Dielectric performance of pyrochlore-type Bi2MgNb2-xTaxO9 ceramics: The effects of tantalum doping

The solid solutions based on the pyrochlore-type system Bi₂MgNb_2-xTa_xO₉ were formed in the compositional range х = 0–2.0 (Bi_1·6Mg_0·8Nb_1.6-tTa_tO_7.2, t = 0–1.6). The Rietveld method was used to refine the structure for Bi₂MgNb_2-xTa_xO₉ (x = 0, 1.0, 2.0). The increasing tantalum content led to the slight decrease in the cubic unit cell parameters from 10.56934 (4) Å for x = 0 and 10.54607 (3) Å for x = 2 (sp.gr. Fd-3m:2). At the same time, tantalum additions suppressed grain growth in the pyrochlore ceramics during sintering and made it possible to obtain materials with an average grain size of 1–2 μm (Bi_1·6Mg_0·8Ta_1·6O_7.2). The increase in the Ta⁵⁺ concentration led to the decrease in the dielectric permeability from 104 (Bi_1·6Mg_0·8Nb_1·6O_7.2) to 20 (Bi_1·6Mg_0·8Ta_1·6O_7.2) at room temperature, while the dielectric loss tangent remained lower than 0.002, which is due to the small grain size and the high porosity of the samples. An increase in temperature has practically no effect on the values of the dielectric permittivity in the entire frequency range. The samples have weak through conductivity. The activation energies of electrical conductivity varied in the range of 0.84–1.00 eV, and the less tantalum, the lower the activation energy. The electrical properties of the samples at 200 Hz to 1 MHz are described by the simplest parallel scheme.     

A thermoelectric generator comprising selenium-doped bismuth telluride on flexible carbon cloth with n-type thermoelectric properties

Carbon cloth was used as a flexible substrate for bismuth telluride (Bi₂Te₃) particles to provide flexibility and improve the overall thermoelectric performance. Bi₂Te₃ on carbon cloth (Bi₂Te₃/CC) was synthesized via a hydrothermal reaction with various reaction times. After over 12 h, the Bi₂Te₃ particles showed a clear hexagonal shape and were evenly adhered to the carbon cloth. Selenium (Se) atoms were doped into the Bi₂Te₃ structure to improve its thermoelectric performance. The electrical conductivity increased with increasing Se-dopant content until 40% Se was added. Moreover, the maximum power factor was 1300 μW/mK² at 473 K for the 30% Se-doped sample. The carbon cloth substrate maintained its electrical resistivity and flexibility after 2000 bending cycles. A flexible thermoelectric generator (TEG) fabricated using the five pairs of 30% Se-doped sample showed an open-circuit voltage of 17.4 mV and maximum power output of 850 nW at temperature difference ΔT = 30 K. This work offers a promising approach for providing flexibility and improving the thermoelectric performance of inorganic thermoelectric materials for wearable device applications using flexible carbon cloth substrate for low temperature range application.     

Enhancing thermoelectric properties of p-type (Bi,Sb)2Te3 via porous structures

Bismuth telluride is a widely used commercial thermoelectric material with excellent thermoelectric performances near room temperature. Reducing thermal conductivity is one of the most effective ways to improve performances of thermoelectric materials. In this study, the thermal conductivity of the material was reduced by fabricating porous structures. Highly dense NaCl-(Bi,Sb)₂Te₃ composites were fabricated by a high-pressure technology. The NaCl phase was then removed from the composites by ultrasonic washing to produce porous structures. The produced (Bi,Sb)₂Te₃ porous materials possessed excellent thermoelectric properties. The porosity and pore size of the (Bi,Sb)₂Te₃ porous materials increased with the increasing NaCl content, decreasing the thermal conductivity significantly. An ultra-low lattice thermal conductivity of 0.21 Wm^?1K^?1 at 493 K was achieved when the porosity was 39%, almost the lowest lattice thermal conductivity reported for (Bi,Sb)₂Te₃ bulk materials. The figure of merit ZT value was enhanced to 1.05 at 493 K when the porosity was 25%. Compared with the most compacted samples (ZT = 0.79 and porosity of 10%) prepared under the same conditions, the ZT value of the porous samples increased by 33%. This study indicated that porous thermoelectric materials can be prepared simply, quickly and efficiently by high-pressure/ultrasonication washing to improve thermoelectric performances, which has evident reference values for preparing other thermoelectric pore materials with enhancing behaviors.     

Thermoelectric Properties of Reduced Polycrystalline Sr0.5Ba0.5Nb2O6 Fabricated Via Solution Combustion Synthesis

The thermoelectric properties of bulk polycrystalline Sr_0.5Ba_0.5Nb₂O₆ (SBN50) fabricated via solution combustion synthesis (SCS) and reduced at temperatures of 900°C–1150°C were explored. The Seebeck coefficient (S) of all samples increased over the entire range of testing temperatures; a peak S value of ?281 μV/K was obtained at 930 K for the sample reduced at 900°C. A metal‐insulator transition was observed in the electrical conductivity (σ) of samples reduced at 1000°C–1150°C, whereas only semiconducting electrical behavior was observed for the sample reduced at 900°C. An optimal balance between S and σ was achieved for the pellet reduced at 1000°C, which exhibited a maximum power factor of 1.78 μW/cm·K² at 930 K. Over a temperature range of 300–930 K, the thermal conductivity (κ) of as‐processed and reduced (1000°C) SBN50 was found to be 1.03–1.4 and 1.46–1.84 W/m·K, respectively. A maximum figure of merit (ZT) of 0.09 was obtained at 930 K for the 1000°C‐reduced sample. X‐ray photoelectron spectroscopy revealed that the Nb²⁺ peak intensity increased at higher reduction temperatures, which could possibly lead to a distortion of NbO₆ octahedra and a decrease in the Seebeck coefficient.     

Flexible,self-powered Bi2O2Se/Graphene photoeletrochemical photodetector based on solid-state electrolytes

Flexible photodetectors have attracted great attention in fields such as display screens, aerospace, and civil engineering due to their wearable and large-area foldable advantages. Therefore, the hybrid structure of Bismuth oxyselenide(Bi₂O₂Se)/Graphene was successfully synthesized in this work through mechanical compound method. In addition, we constructed a photodetector based on solid-state electrolyte, which has the advantage of small size, light weight, and portability. Photoelectrochemical tests show that the Bi₂O₂Se/graphene photodetector based on solid-state electrolyte has excellent photoresponse characteristics under 0 V, and its photocurrent density is 400 nA/cm² when the optical power is 120 mW/cm². In addition, the Bi₂O₂Se/graphene photodetector exhibits superb flexibility. After different bending angles and bending times, the photocurrent slightly decreases, which may be due to small cracks in the bending process. Finally, the tested Bi₂O₂Se/graphene solid-state photodetector showed excellent stability. The photocurrent was only slightly reduced after 1000 s, which was 81% of the original value. The result shows that the hybrid structure of Bi₂O₂Se/Graphene has potential in the field of photodetectors with exceptional performance, excellent stability and mechanical properties.     

Grain boundary engineering strategy for simultaneously reducing the electron concentration and lattice thermal conductivity in n-type Bi2Te2.7Se0.3-based thermoelectric materials

This study demonstrates atomic layer deposition (ALD) of an extremely thin Al₂O₃ layer over n-type Bi₂Te_2.7Se_0.3 to alleviate the adverse effects of multiple boundaries on their thermoelectric performance. Multiple boundaries reduce thermal conductivity (κ), but generate electrons, deviating from the optimum carrier concentration. Only one Al₂O₃ ALD cycle effectively suppresses Te volatilization at the grain boundaries, resulting in a decrease from 5.8 × 10¹⁹/cm³ to 3.6 × 10¹⁹/cm³ in the electron concentration. Concurrently, the one-cycle-Al₂O₃ coating produces fine grains, thus inducing numerous boundaries, ultimately suppressing the lattice κ from 0.64 to 0.33 W/m·K. A further increase in the number of Al₂O₃ cycles leads in a significant rise in the resistance, resulting in degradation of thermoelectric performance. Consequently, the ZT value is increased by 51 % as a result of Al₂O₃ coating with a single ALD cycle. Our approach offers new insights into the simultaneous reduction of the κ and electron concentration in n-type Bi₂Te₃-based materials.     

Bi2O3–Nd2O3–WO3 system: Phase formation,polymorphism, and conductivity

Cubic, tetragonal, and monoclinic (Bi₂O₃)_x (Nd₂O₃)_y (WO₃)_z (x + y + z = 1) solid solutions based on the Bi₂O₃ oxygen ion conductor have been prepared by solid-state reactions in the ternary system Bi₂O₃–Nd₂O₃–WO₃. The field of monoclinic compounds with a Bi_3·24La₂W_0·76O_10.14-type structure has been shown to account for most of the ternary system. Compounds with a cubic fluorite structure exist at the boundary of the monoclinic phase field in two small regions at high (83–91 mol% Bi₂O₃, δ-phase) and low (20–55 mol% Bi₂O₃, δ′-phase) Bi concentrations. The cubic samples of the δ-phase retain their structure only during rapid heating and cooling, but annealing in the range of 300–700 °C results in structure degradation to lower symmetry phases. The monoclinic compounds and Bi-poor cubic compounds (δ′-phase) have good thermal stability. The cubic samples of the δ′-phase are hygroscopic. Their bulk conductivity noticeably increases with atmospheric humidity, suggesting that these materials are potential proton conductors.     

Bi2O3 induced tremella-like Bi2WO6 with visible light catalytic performance

The development of single phase photocatalyst is expected to realize clean energy and pollution treatment. Herein, we reported a novel Tremella-like Bi₂WO₆ catalyst which was obtained by facile hydrothermal technique. The formation of Tremella-like Bi₂WO₆ strongly depended on introduction of Bi₂O₃. Based on the Kirkendall effect, Bi₂O₃ induced Bi(NO₃)₃·5H₂O to form biscuit-like Bi₆O₆(OH)₃(NO₃)₃·3H₂O particles which provided templates and reacted simultaneously with WO₄^2? to synthesize Tremella-like Bi₂WO₆. The Tremella-like Bi₂WO₆ exhibited remarkable visible-light catalytic performance. The degradation rate of RhB dye reached 100% with 10 min, the reduction rate of CO₂ was 5.5 times higher than pure Bi₂WO₆. Moreover, the Tremella-like Bi₂WO₆ catalyst displayed excellent stability during the recycle experiments. The high catalytic activity makes single phase Bi₂WO₆ catalyst great potential in environmental protection field.