High‐Performance Ferroelectric Solid Solution Crystals: Pb(In1/2Nb1/2)O3–Pb(Zn1/3Nb2/3)O3–PbTiO3

A series of regular shaped Pb(Zn_1/3Nb_2/3)O₃‐based ternary ferroelectric single crystals (1 ? x)Pb(In_1/2Nb_1/2)O₃–0.33Pb(Zn_1/3Nb_2/3)O₃–xPbTiO₃ (PIN–PZN–PT) have been grown by means of the top‐seeded solution growth method that prevented pyrochlore phase and promoted [001] or [111] growth. The nucleation and crystallization behavior of the Pb(Zn_1/3Nb_2/3)O₃‐based ferroelectric single crystals differed from other relaxor‐based ferroelectric single crystals was discovered. Di‐/piezo‐/ferro‐/pyroelectric properties were characterized systematically. The PIN–PZN–PT single crystals showed large coercive fields E_c, high Curie temperature T_C and high pyroelectric coefficient P, presenting similar performance but better thermal stability compared with the PZN–PT single crystals, and making it a promising material for transducers and IR detectors in a wider temperature range.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.     

Structural Evolution and Properties of 0.3Pb(In1/2Nb1/2)O3–0.38Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 Ferroelectric Ceramics with Different Sintering Times

The structural evolution and properties of 0.3Pb(In_1/2Nb_1/2)O₃–0.38Pb(Mg_1/3Nb_2/3)O₃–0.32PbTiO₃ (0.3PIN‐0.38PMN‐0.32PT) ferroelectric ceramics with different sintering times have been investigated. The content of the tetragonal phase is increased in samples sintered for more than 6 h, despite that the composition falls in the rhombohedral region of the previously established phase diagram. The results show that the metastable tetragonal phase at room temperature is induced and stabilized by the tensile residual stresses. Excessively long sintering time generally leads to grain coarsening, loss of lead, and deterioration of properties, while the increasing amount of the tetragonal phase, and the large residual tensile stress appear to improve the dielectric and electromechanical properties. This study offers new insights into the sintering of Pb‐based ferroelectric ceramics with complex compositions.     

Phase Diagram and Properties of High TC/TR−T Pb(In1/2Nb1/2) O3–Pb(Zn1/3Nb2/3)O3–PbTiO3 Ferroelectric Ceramics

A ternary ferroelectric ceramic system, (1?x?y)Pb(In_1/2Nb_1/2)O₃–xPb(Zn_1/3Nb_2/3)O₃–yPbTiO₃ (PIN–PZN–PT, x = 0.21, 0.27, 0.36, 0.42), was prepared using a two‐step precursor method. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) was identified by X‐ray diffraction. The optimum piezoelectric and electromechanical properties were achieved for a composition close to MPB (0.5PIN–0.21PZN–0.29PT), where the piezoelectric coefficient d₃₃, planar electromechanical coupling factor k_p, and remnant polarization P_r are 660 pC/N,72%, and 45 μC/cm², respectively. The Curie temperature T_C and rhombohedral to tetragonal phase transition temperature T_R?T were also derived by temperature dependence of dielectric measurements. The strongly “bended” MPB in the PIN–PT system was found to be “flattened” after addition of PZN in the PIN–PT–PZN system. The results demonstrate a possibility of growing ferroelectric single crystals with high electromechanical properties and expanded range of application temperature.     

High temperature‐insensitive ferro‐/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 relaxor single crystals

For rhombohedral (R) Pb(In_1/2Nb_1/2)O₃–PbZrO₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PZ–PMN–PT) relaxor single crystal, high temperature‐insensitive behaviors under different external stimuli were observed (remnant polarization P_r from 30°C to 180°C and piezoelectric strain d₃₃* from 30°C to 116°C). When electric field E ≥ 50 kV/cm in the case of an activation field E_a = 40‐50 kV/cm was applied, it was found that the domain switching was accompanied by a phase transition. The high relaxor nature of the R phase PIN–PZ–PMN–PT was speculated to account for the large E_a and high piezoelectric response. The short‐range correlation lengths extracted from the out‐of‐plane (OP) and in‐plane (IP) nanodomain images, were 64 nm and 89 nm, respectively, which proved the high relaxor nature due to In³⁺ and Zr⁴⁺ ions entering the B‐site in the ABO₃‐lattice and enhancing the disorder of B‐site cations in the R phase PIN–PZ–PMN–PT. The switching process of R nanodomain variants under the step‐increased tip DC voltage was visually revealed. Moreover, the time‐dependent domain evolution confirmed the high relaxor nature of the R phase PIN–PZ–PMN–PT single crystal.     

Fabrication of Transparent Pb(Mg1/3Nb2/3)O3–PbTiO3 Based Ceramics by Conventional Sintering

Transparent 0.9Pb(Mg_1/3Nb_2/3)O₃–0.1PbTiO₃ (PMN‐PT) based ceramics were prepared by a conventional solid‐state synthesis without using a hot‐press method. The ceramics became transparent when they were sintered in an O₂ atmosphere. The optical transmission increased with decreasing diameter of the calcined powder, which was controlled by the size of zirconia ball‐milling media. Substitution of 3 mol% La for Pb in PMN‐PT further increased the optical transmission to 68% at the wavelength of 2000 nm, which was comparable to that of hot‐pressed Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ based transparent ceramics.     

Pyrochlore‐Free Ferroelectric 0.64Pb(Ni1/3Nb2/3)O3–0.36PbTiO3 Ceramics Synthesized by the Combustion Method

By adopting Nb₂O₅, HNO₃ and coordination agents EDTA as raw materials, pyrochlore‐free 0.64Pb(Ni_1/3Nb_2/3)O₃–0.36PbTiO₃(0.64PNN–0.36PT) powders were successfully synthesized via a combustion route. Free of pyrochlore phase was realized by the chelation formation of EDTA‐metal ions which isolate niobium and lead oxides and then prevent the formation of pyrochlore phases, therein generate the desired perovskite phases. Comparing the results with similar samples synthesized by the Columbite method, the new 0.64PNN–0.36PT ceramics here shown much better dielectric and ferroelectric performances: a maximum dielectric constant of 22 856 at 1 kHz and a remnant polarization of 21.6 μC/cm² at 40 kV/cm.     

Pb(Mg1/3Nb2/3)O3–PbTiO3 Textured Ceramics with High Piezoelectric Response by a Novel Templated Grain Growth Approach

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ is used as a model system of perovskite solid solutions with very high piezoelectric response at tailored morphotropic phase boundaries to demonstrate the processing of textured ceramics by ceramic‐only technology. A novel homogeneous templated grain growth approach that uses conventional ceramic procedures and a single‐source nanocrystalline powder for the matrix and also for obtaining the templates is described. Two batches of (100) faceted cube‐shaped microcrystals with average sizes of 27 and 10 μm were successfully used as templates, and aligned by tape casting for the processing of <001>‐textured Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ piezoelectric ceramics. Materials with effective piezoelectric coefficients up to 1000 pC/N and ferroelectric properties approaching those of single crystals are obtained.     

Microstructure evolution and reaction mechanism of Pb(Zr1/2Ti1/2)O3-Pb(Zn1/3Nb2/3)O3–Pb(Ni1/3Nb2/3)O3 piezoelectric ceramics with plate-like PbTiO3 template

0.83 Pb(Zr_1/2Ti_1/2)O₃-0.11Pb(Zn_1/3Nb_2/3)O₃-0.06Pb(Ni_1/3Nb_2/3)O₃ (PZNNT) samples with plate-like PbTiO₃ (PT) template were prepared using tape casting technology. The microstructure evolution and reaction mechanism between the matrix and PT template was investigated systematically. The quench heat treatment experiment was designed and the microstructure was evaluated. The results showed that the plate-like PT template has relatively low thermal stability which would decompose to form Pb-rich liquid phase and Ti-rich region at the sintering temperature of 900 °C–1050 °C. Plate-like PT template reacted with the PZNNT matrix materials during the sintering process, which did not contribute to the grain growth orientation for PZNNT matrix. Finally, the mechanism of grain growth for the PZNNT ceramics with plate-like PT template is clarified. This work demonstrated that the thermal stability of plate-like template is one of the key factors for fabricating textured piezoelectric ceramics.     

Terahertz Time‐Domain Spectroscopy of 0.73Pb(Mg1/3Nb2/3)O3–0.27PbTiO3 Single Crystal

Lead magnesium niobate titanate is an important ferroelectric material. In this study, the terahertz (THz) transmission properties of a 0.73Pb(Mg_1/3Nb_2/3)O₃–0.27PbTiO₃ single crystal were investigated using a time‐domain spectroscopy method. Complex refractive index and dielectric dispersion functions were determined from the amplitude and phase information derived from time‐domain responses. Based on calculations, it was concluded that the room‐temperature dielectric constant of the single crystal equal to ~30 at 1 THz. This result could be a useful reference for development of ferroelectric‐material‐based THz components and devices.     

High‐Temperature Dielectric Relaxation in Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystals

We reported the dielectric properties of Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ single crystal in the temperature range of 300–1073 K and the frequency range of 100 Hz–10 MHz. Our results showed the coexistence of both true‐ and pseudo‐relaxor behaviors in the crystal. The true relaxor behavior related to the paraelectric‐ferroelectric phase transition occurs at~423 K. The pseudo‐relaxor behavior appearing at~773 K was found to be related to oxygen vacancies. Further investigation reveals that the pseudo‐relaxor behavior has fine structure: it contains two oxygen‐vacancy‐related relaxation processes. The low‐temperature relaxation process is a dipolar relaxation created by the hopping motions of the oxygen vacancies, and the high‐temperature relaxation process is a Maxwell‐Wagner relaxation caused by the sample/electrode contacts.     

Metastable Ferroelectric Phase Induced by Electric Field in xPb(Zn1/3Nb2/3)O3–(1–x)Pb(Zr0.95Ti0.05)O3 Ceramics

A xPb(Zn_1/3Nb_2/3)O₃–(1–x)Pb(Zr_0.95Ti_0.05)O₃ (xPZN–(1–x) PZT) system close to antiferroelectric–ferroelectric (AFE–FE) morphotropic phase boundary has been prepared and investigated. The XRD results reveal PZN addition induces a phase transition from the orthorhombic (AFE) to rhombohedral (FE) phase through a phase coexistence region (AFE+FE). The polarization–electric field (P–E) measurements indicate that the AFE phase can be induced into a metastable FE (FE_m) phase. And the FE_m can recover to AFE around a critical temperature indicated by temperature‐dependent P–E loops. A composition‐temperature phase diagram was generalized within a certain range of PZN content in which an AFE–FE phase boundary connecting orthorhombic antiferroelectric to rhombohedral ferroelectric phase zones is formed near room temperature.     

Seeding effects on the mechanochemical synthesis of 0.9Pb(Mg1/3Nb2/3)O3–0.1PbTiO3

A systematic investigation of the seeding effects on the mechanochemical synthesis of lead magnesium niobate – lead titanate 0.9Pb(Mg_1/3Nb_2/3)O₃–0.1PbTiO₃ (PMN–10PT), one of the most studied relaxor-ferroelectric material for electrocaloric applications, is reported. The perovskite crystallisation process was followed by X-ray diffraction using the Rietveld refinement method and transmission electron microscopy. Compared to the mixed-oxides case which requires 143 h of high-energy milling, the milling time needed to obtain a phase-pure PMN–10PT perovskite using PT seeds is reduced almost twice. The presence of PT seeds leads to faster transitions from the amorphous to pyrochlore and to perovskite phases compared to the mixed-oxides case. A sintering study demonstrates, for the first time, that a second, metastable, pyrochlore phase is taking part in the processes of perovskite formation. The PMN–10PT ceramic prepared from the PT-seeded powder exhibits electrocaloric properties comparable to reported values for PMN–10 PT prepared from oxides.     

Anisotropic domain structures of Pb(Mg1/3Nb2/3)O3–PbZrO3–PbTiO3 single crystals with high ferroelectric phase transition temperature

The anisotropic domain structures and local piezoresponse of rhombohedral Pb(Mg_1/3Nb_2/3)O₃–PbZrO₃–PbTiO₃ single crystals with high ferroelectric phase transition temperature (T_FE‐FE≥120°C) were systematically investigated by vector piezoresponse force microscopy. The typical size of labyrinthine domain pattern for [001]_C sample was in the range of 100‐200 nm, revealing its relaxor feature. While the [011]_C sample exhibited ordered ribbon‐shaped domain pattern with preferential alignment along <011> direction since the modulation effect of polar nanoregions. For [111]_C sample, it had messy and featureless domain patterns. For as‐grown crystal, the incorporation of Zr⁴⁺ cation in Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ system resulted in that the long‐range coulomb interactions of the charged ions in the short range order regions were weakened, leading to an increased relaxor feature. Concurrently, the incorporation of Zr⁴⁺ cation enhanced the Pb‐B repulsion intensity, resulting in an improved T_FE‐FE. Temperature‐dependent properties of as‐grown crystal exhibited good temperature stability from 30 to 120°C, indicating it is a promising material for actuator and ultrasonic transducer applications.     

High electric field-induced strain properties in La-doped Pb(In1/2Nb1/2)O3–PbZrO3–PbTiO3 relaxor ferroelectric ceramics

Piezoelectric ceramics with high strain response and low hysteresis are highly in demand for high-performance actuator applications. Unfortunately, the trade-off relationship between large field-induced strain and low hysteresis in piezoelectric ceramics is a key challenge for designing high-performance piezoelectric actuators. Herein, ymol%La-doped 0.10 Pb(In_1/2Nb_1/2)O₃-xPbZrO₃-(0.90–x)PbTiO₃ [0.10PIN-xPZ-(0.90-x)PT: ymol%La] ternary relaxor ferroelectric ceramics were prepared by conventional solid-state reaction technique. Pb(In_1/2Nb_1/2)O₃ (PIN) as a relaxor end member was introduced into (Pb,La) (Zr,Ti)O₃ (PLZT) system to improve relaxor characteristics and strain properties. A giant strain of 0.23% was obtained in 0.10PIN-0.59PZ-0.31 PT: 8mol%La ceramic at the electric field of 20 kV/cm, with a high piezoelectric d₃₃* of 1150 pm/V and low hysteresis H_y of 6.4%, exhibiting a potential application in high-performance piezoelectric actuators. Furthermore, the effects of La ion doping and components on the ferroelectric, dielectric and electric field-induced strain properties were investigated, and provides a new way for improve the strain properties of piezoelectric materials.     

High radiation tolerance of electrocaloric (1-x)Pb(Mg1/3Nb2/3)O3–xPbTiO3

High radiation tolerance of functional materials in harsh environments is the key requirement for the operation of particle accelerators, medical devices, nuclear power plants, satellites, and spacecraft. Neutron and gamma (γ) radiation can seriously affect the functional properties of the irradiated materials and thus the performance of the entire device. In this work, the feasibility of using (1-x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ (PMN–100xPT) electrocaloric materials in applications where the material is exposed to high neutron and γ-radiation is investigated. For this purpose, three different compositions of PMN–100xPT ceramics (x = 0, 0.1, and 0.35) were prepared and their dielectric, ferroelectric and electrocaloric properties were investigated before and after neutron and γ-irradiation. The samples were irradiated with a neutron fluence of 10¹⁵ to 10¹⁷ neutrons cm^?2 with an energy of 1 MeV, which exceeds the largest expected neutron irradiation in the European Council for nuclear Research (CERN) and simultaneously exposed to γ-irradiation. The neutron and γ-radiation partially affect the functional properties of the PMN–35PT, the ceramic with distinct ferroelectric and weakened relaxor features, with some differences observed in the domain switching behavior, measured by conventional polarization versus electric field (P–E) hysteresis, at the highest radiation dose of 10¹⁷ neutrons cm^?2. In contrast, the functional properties of the irradiated PMN and PMN–10PT samples with relaxor behavior are quite similar to those of the pristine samples, therefore, we conclude that these materials can be used as working materials in EC coolers exposed to such harsh environments.     

Improvement of temperature-stability and piezoelectric performance of Pb(In0.5Nb0.5)O3–PbTiO3 crystals via Nd doping

High-performance relaxor-PbTiO₃ ferroelectric crystals have been widely applied in transduces, sensors and so on. The ferroelectric phase transition temperature restricts their application in automobile, deep oil-well detection and aerospace which requires high thermal stability. Decreasing the effects of ferroelectric phase transition is a promising strategy for improving the thermal stability. Here, the design strategy is structural regulation via rare earth doping tetragonal Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PIN-PT) crystals. The d₃₃, k₃₃ and T_C of [001]_c-oriented Nd-PIN-PT crystals are 750 pC/N, 87%, 250 °C. Compared with the d₃₃ of tetragonal 0.61PIN-0.39 PT crystals (540 pC/N) and tetragonal 0.35PIN-0.26 Pb(Mg_1/3Nb_2/3)O₃ (PMN)-0.39 PT crystals (530 pC/N), the d₃₃ of Nd-PINT crystals enhance by 39% and 41%. In addition, Nd-PIN-PT crystals have Q_m of 110, which is larger than rhombohedral relaxor-PbTiO₃ ferroelectric crystals (~50). Although the d₃₃ of Nd-PIN-PT crystals is lower than that of rhombohedral relaxor-PT ferroelectric crystals, the d₃₃ and k₃₃ are stable up to 250 °C, which is higher than tetragonal PIN-PMN-PT crystals (210 °C). The high thermal stability of piezoelectric properties is related to the high thermal stability of domain after poling. This work provides a design strategy for high thermal stability ferroelectric crystals.     

Broadband dielectric spectroscopy of PbMg1/3Nb2/3O3–PbSc1/2Nb1/2O3 ceramics

Broadband dielectric spectroscopy results of various ordered and disordered (1 ? x)Pb(Mg_1/3Nb_2/3)O₃–(x)Pb(Sc_1/2Nb_1/2)O₃ (PMN–PSN) ceramics are investigated in the temperature range from 80 K to 300 K and frequency range from 20 Hz to 2 THz. Dielectric dispersion is very broad and in the ferroelectrics case (x = 1, 0.95) consists of two parts: low-frequency part caused by ferroelectric domains and higher frequency part caused by soft mode. The relaxational soft mode exhibits pronounced softening close to phase transition temperature, as it is typical for order–disorder phase transitions. By substituting Sc³⁺ by Mg²⁺ in PMN–PSN ceramics relaxation slows down, and for relaxors (x = 0.2) the most probable relaxation frequency decreases on cooling according to Vogel–Fulcher law.     

Processing and properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thick films

We have investigated the processing of 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) thick films on platinised alumina substrates. Nanosized PMN–PT powder with 2 mol% of excess PbO was prepared by high-energy milling and deposited on the substrate using screen-printing technology. The films were then sintered at 950 °C in a PbO-rich atmosphere. The influence of the sintering time and the amount of PbO-containing packing powder was studied and related to the structural, microstructural, dielectric and piezoelectric properties of the film. In order to obtain a homogeneous and dense thick film without any secondary phase, the PMN–PT films had to be sintered in the presence of a PbO-based liquid phase that had to be completely removed from the thick film during the final stage of the sintering. Under optimal sintering conditions we obtained a room temperature relative dielectric permittivity of 3600, dielectric losses of 0.036, a T_m of 174 °C, a permittivity at the T_m of 21,000 and a d₃₃ of 140 pC/N.     

Growth of the ternary Pb(Mn,Nb)O3–Pb(Zr,Ti)O3 thin film with high piezoelectric coefficient on Si by RF sputtering

In this study, ternary ferroelectric 0.06Pb(Mn_1/3Nb_2/3)O₃–0.94Pb(Zr_0.48Ti_0.52)O₃ (PMN–PZT) thin film with high piezoelectric coefficient were grown on La_0.6Sr_0.4CoO₃-buffered Pt/Ti/SiO₂/Si substrate by RF magnetron sputtering method. The phase and domain structure along with the macroscopic electrical properties were obtained. Under the optimized temperature of 550°C and sputtering pressure 0.9 Pa, the PMN–PZT film owned large remnant ferroelectric polarization of 62 μC/cm². In addition, the PMN–PZT film had polydomain structures with fingerprint-type nanosized domain patterns and typical local piezoelectric response. Through piezoelectric force microscopy, the PMN–PZT thin film at nanoscale exhibited obvious domain reversal when subjected to in situ poling field. It was further found that the quasi-static piezoelectric coefficient of the PMN–PZT thin film reached 267 pC/N, which was about twice to that of the commercial PbZrO₃–PbTiO₃ (PZT) thin film. The optimized relaxor ferroelectric thin film PMN–PZT on silicon with global electrical properties shows great potential in the piezoelectric micro-electro-mechanical systems applications.