Electromechanical Properties of Acceptor‐Doped Lead‐Free Piezoelectric Ceramics

We have studied the processing and electromechanical properties of Mn and Fe‐doped 0.88[Bi_0.5Na_0.5TiO₃]–0.08[Bi_0.5K_0.5TiO₃]–0.04[Bi_0.5Li_0.5TiO₃] piezoelectric ceramics prepared by the mixed oxide route. Different amounts of Mn (0.01, 0.014, 0.015, 0.016, 0.017, 0.02, 0.022) or Fe (0.0125, 0.015, 0.0175) were doped to this lead‐free piezoelectric composition. Ceramics were sintered at different temperatures (1075°C–1150°C) to achieve the highest density and mechanical quality factor. Mn or Fe doping resulted in a considerable enhancement of Q_m in both planar and thickness resonance modes. In 1.5 mol% Mn‐doped ceramics sintered at 1100°C, a planar Q_m of about 970 and tanδ of 0.88% were obtained. In Fe‐doped ceramics, a planar Q_m as high as 900 was achieved. Acceptor dopants also resulted in decreasing the coupling coefficients, the piezoelectric charge coefficient, and the dielectric constant.     

Reduced Dielectric Loss and Strain Hysteresis in Fe and Mn Comodified High‐Temperature BiScO3–PbTiO3 Ceramics

There is a growing requirement for high‐temperature piezoelectric materials in the petrochemical, automotive, and aerospace industries. Here, the piezoelectric materials of Fe and Mn comodified 0.36BiScO₃–0.64PbTiO₃ (BS‐PTFMn) ceramics with high Curie temperature (T_c), large mechanical quality factor (Q_m), and reduced strain hysteresis were presented. XRD results revealed that all the BS‐PTFMn ceramics have a pure perovskite structure with tetragonal symmetry, and the ratio of c/a is insensitive to the contents of Fe. With the modifications of Fe, the dielectric loss tanδ and strain hysteresis decrease clearly, while the mechanical quality factor improves significantly. The Curie temperature, piezoelectric constant, planar electromechanical coupling factor, dielectric loss, and mechanical quality factor of the BS‐PTFMn with 3% Fe content are 492°C, 235 pC/N, 0.38, 0.6%, and 280, respectively. BS‐PTFMn ceramics show 50°C higher T_c than BS‐PT morphotropic phase boundary composition. The figure of merit (product of Q_m, and k_ij) of BS‐PTFMn ceramics is about five times than that of pure BS‐PT ceramics. Furthermore, for the BS‐PTFMn ceramics with Fe content of 3 mol%, the high field strain coefficient value calculated from the electric‐field‐induced strain curves (S_max/E_max) is 320 pm/V, while the strain hysteresis (under 40 kV/cm) is reduced to one fifth that of unmodified BS‐PT ceramics. Moreover, the temperature‐dependent electromechanical coupling coefficient and dielectric constant are very stable in the temperature range from room temperature (RT) to 450°C. These results indicated that BS‐PTFMn ceramics are promising for high‐temperature piezoelectric applications.     

High Electric‐Induced Strain and Temperature‐Dependent Piezoelectric Properties of 0.75BF–0.25BZT Lead‐Free Ceramics

0.75BiFeO₃–0.25Ba(Zr_xTi_1?x) + 0.6 wt% MnO₂ (0.75BF–0.25BZT) ceramics with Mn addition were prepared by the solid‐state reaction method. The high‐field strain and high‐temperature piezoelectric properties of 0.75BF–0.25BZT ceramics were studied. Introduction of Zr in the solid solutions decreased the Curie temperature slightly, and improved the dielectric and piezoelectric properties obviously. The piezoelectric properties of 0.75BZT–0.25BT ceramics reached the maximum at Zr content of 10 mol%. The Curie temperature T_c, dielectric constant ε and loss tanδ (1 kHz), piezoelectric constant d₃₃, and planner electromechanical coupling factor k_p of 0.75BF–0.25BZT ceramics with 10 mol% Zr were 456°C, 650, 5%, 138 pC/N, and 0.30, respectively. The high‐field bipolar and unipolar strain under an electric field of 100 kV/cm reached up to 0.55% and 0.265%, respectively, which were comparable to those of BiScO₃–PbTiO₃ and “soft” PZT‐based ceramics. The typical “butterfly”‐shaped bipolar strain and frequency‐dependent peak‐to‐peak strain indicated that the large high‐field‐induced strain may be due to non‐180° domain switching. Rayleigh analysis reflected that the improved piezoelectric properties resulted from the enhanced extrinsic contribution by Zr doping. The unipolar strain of 0.75BF‐0.25BZT ceramics with 10 mol% Zr was almost linear from RT to 200°C. These results indicated that 0.75BF–0.25BZT ceramics were promising candidates for high‐temperature and lead‐free piezoelectric actuators.     

Remarkable piezoelectricity and stable high‐temperature dielectric properties of quenched BiFeO3–BaTiO3 ceramics

Effects of quenching process on dielectric, ferroelectric, and piezoelectric properties of 0.71BiFeO₃?0.29BaTiO₃ ceramics with Mn modification (BF–BT?xmol%Mn) were investigated. The dielectric, ferroelectric, and piezoelectric properties of BF–BT?xmol%Mn were improved by quenching, especially to the BF–BT?0.3 mol%Mn ceramics. The dielectric loss tanδ of quenched BF–BT?0.3 mol%Mn ceramics was only 0.28 at 500°C, which was half of the slow cooling one. Meanwhile, the remnant polarization P_r of quenched BF–BT?0.3 mol%Mn ceramics increased to 21 μC/cm². It was notable that the piezoelectric constant d₃₃ of quenched BF–BT?0.3 mol%Mn ceramics reached up to 191 pC/N, while the T_C was 530°C, showing excellent compatible properties. The BF–BT?xmol%Mn system ceramics showed to obey the Rayleigh law within suitable field regions. The Rayleigh law results indicated that the extrinsic contributions to the dielectric and piezoelectric responses of quenched BF–BT?xmol%Mn ceramics were larger than the unquenched ceramics. These results presented that the quenched BF–BT?xmol%Mn ceramics were promising candidates for high‐temperature piezoelectric devices.     

Improved thermal stability of the piezoelectric properties of (Li,Ag)‐co‐modified (K,Na) NbO3‐based ceramics prepared by spark plasma sintering

High‐performance lead‐free piezoelectric ceramics 0.94(K_0.45Na_0.55)_1?xLi_x(Nb_0.85Ta_0.15)O₃–0.06AgNbO₃ (KNNLTAg‐x) were successfully prepared by spark plasma sintering technique. The doping effect of Li on the structural and electrical properties of KNNLTAg‐x (x=0, 0.02, 0.04, 0.06, 0.08 and 0.10) ceramics was studied. The lattice structure, ferroelectric and piezoelectric properties of the KNLNTAg‐x ceramics are highly dependent on the Li doping level. In particular, the Li dopant has a great impact on both Curie temperature T_c and orthorhombic‐tetragonal transition temperature T_O‐T. The 4% Li‐doped sample exhibited relatively high T_O‐T of 95°C, leading to a stable dynamic piezoelectric coefficient (d₃₃*) of 220‐240 pm/V in a broad temperature range from 25°C to 105°C. Additionally, the 2% Li‐doped sample shows a high d₃₃* of 320 pm/V at 135°C, suggesting its great potential for high‐temperature applications.     

Ultra‐Low Fire Glass‐Free Li3FeMo3O12 Microwave Dielectric Ceramics

A new ultra‐low fire glass‐free microwave dielectric material Li₃FeMo₃O₁₂ was investigated for the first time. Single phase ceramics were obtained by the conventional solid‐state route after sintering at 540°C–600°C. The atomic packing fraction, FWHM of the A_g oxygen‐octahedron stretching Raman mode and Qf values of samples sintered at different temperatures correlated well with each other. The sample with a Lower Raman shift showed a higher dielectric constant. Interestingly, the system also showed a distinct adjustable temperature coefficient of resonant frequency (from ?84× 10^?6/°C to 25 × 10^?6/°C).     

Phase Transition and Large Electrostrain in Lead‐Free Li‐Doped (Ba,Ca)(Ti,Zr)O3 Ceramics

Large piezoelectric effect is achieved in Li‐doped Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃(BCTZ) ceramics by use of tuning the phase boundaries. Rhombohedral–orthorhombic (R–O) and orthorhombic–tetragonal (O–T) multiphase coexistence is constructed in the ceramics by changing Li contents. The high piezoelectric constant d₃₃ (493 pC/N) and large electrostrain (dS_max/dE_max = 931 pm/V) have been observed in the Li‐doped (Ba, Ca)(Ti, Zr)O₃ ceramics at low sintering temperature (1350°C/2 h). The significant enhancement in materials properties is ascribed to the multiphase region around room temperature induced by Li‐doped effect.     

Manganese‐Doped BiFeO3–BaTiO3 High‐Temperature Piezoelectric Ceramics: Phase Structures and Defect Mechanism

The bulk BiFeO₃–BaTiO₃ system has been studied as a potential lead‐free high‐temperature piezoelectric material. It is found that the multivalency manganese‐doped 0.8BiFeO₃–0.2BaTiO₃ ceramics exhibit the coexistence of tetragonal and rhombohedral phases, whereas Mn doping improves the resistivity and exhibits hard characteristic. The optimal properties were obtained at 0.12 wt% Mn addition exhibiting T_c ? 637°C. The increase of T_c in Mn‐modified compositions can be ascribed to the appearance of internal electric bias field by acceptor doping. The combination of good electrical properties and high T_c makes these ceramics suitable for elevated temperature piezoelectric devices.     

High‐temperature piezoelectric properties of 0‐3 type CaBi4Ti4O15:x wt%BiFeO3 composites

The 0‐3 type CaBi₄Ti₄O₁₅:30 wt%BiFeO₃ composite shows much better high‐temperature piezoelectric properties than the single‐phase CaBi₄Ti₄O₁₅ or BiFeO₃ ceramics. The composite with 0‐3 type connectivity exhibits a high density of 7.01 g/cm³, a saturated polarization of 21.5 μC/cm² and an enhanced piezoelectric d₃₃ of 25 pC/N. After the poled composite was annealed at 600°C, its d₃₃ is 21 pC/N at room temperature. Resistance of the composite decreases slowly from 10⁹ ohm at 20°C to ~10⁵ ohm at 500°C. Furthermore, the poled composite shows strong radial and thickness dielectric resonances at 20°C‐500°C.     

Low‐Temperature Sintering Microwave Characteristics of B2O3‐doped CaLa4Ti4O15 Dielectric Ceramics

Preparation and microwave dielectric properties of B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics have been investigated. X‐ray diffraction data show that CaLa₄Ti₄O₁₅ ceramic has a trigonal structure coupled with a second phase of CaLa₄Ti₅O₁₇. The CaLa₄Ti₄O₁₅ ceramic with addition of 0.5 wt% B₂O₃, sintered at 1220°C for 4 h, exhibits microwave dielectric properties with a dielectric constant of 45.8, Q × f value of 24,000 GHz, and temperature coefficient of resonant frequency (τ_f) of ?19 ppm/^°C. B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics, which have better sintering behavior (decrease in sintering temperature ~ 330°C) and dielectric properties than pure CaLa₄Ti₄O₁₅ ceramics, are candidates for applications in microwave devices.     

High‐Performance Small‐Amount Fe2O3‐Doped (K,Na)NbO3‐Based Lead‐Free Piezoceramics with Irregular Phase Evolution

[(K_0.43Na_0.57)_0.94Li_0.06][(Nb_0.94Sb_0.06)_0.95Ta_0.05]O₃ + x mol% Fe₂O₃ (KNLNST + x Fe, x = 0~0.60) lead‐free piezoelectric ceramics were prepared by conventional solid‐state reaction processing. The effects of small‐amount Fe₂O₃ doping on the microstructure and electrical properties of the KNLNST ceramics were systematically investigated. With increasing Fe³⁺ content, the orthorhombic‐tetragonal polymorphic phase transition temperature (T_O‐T) of KNLNST + x Fe ceramics presented an obvious “V” type variation trend, and T_O‐T was successfully shifted to near room temperature without changing T_C (T_C = 315°C) via doping Fe₂O₃ around 0.25 mol%. Electrical properties were significantly enhanced due to the coexistence of both orthorhombic and tetragonal ferroelectric phases at room temperature. The ceramics doped with 0.20 mol% Fe₂O₃ possessed optimal piezoelectric and dielectric properties of d₃₃ = 306 pC/N, k_p = 47.0%, = 1483 and tan δ = 0.023. It was revealed that the strong internal stress in the KNLNST + x Fe ceramics with higher Fe³⁺ contents (x = 0.40, 0.60) stabilized the orthorhombic phase, leading to the irregular “V” type rather than the usually observed monotonic phase transition with composition change in the ceramics.     

Novel Low‐Firing Forsterite‐Based Microwave Dielectric for LTCC Applications

A novel low‐temperature sintering microwave dielectric based on forsterite (Mg₂SiO₄) ceramics was synthesized through the solid‐state reaction method. The effects of LiF additions on the sinterability, phase composition, microstructure, and microwave dielectric properties of Mg₂SiO₄ were investigated. It demonstrated that LiF could significantly broaden the processing window (~300°C) for Mg₂SiO₄, and more importantly the sintering temperature could be lowered below 900°C, maintaining excellent microwave dielectric properties simultaneously. The 2 wt% LiF‐doped samples could be well‐sintered at 800°C and possessed a ε_r ~ 6.81, a high Q×f ~ 167 000 GHz, and a τ_f ~ ?47.9 ppm/°C, having a very good potential for LTCC integration applications.     

Microwave Dielectric Properties of Aluminum‐Substituted Ba6−3xNd8+2xTi18O54 Ceramics

According to solid‐state reaction routine, microwave dielectric ceramics of aluminum‐supplanted Ba_6?3xNd_8+2xTi₁₈O₅₄ (0.5 ≤ x ≤ 0.75) ceramics were synthesized and the effects of composition on microwave dielectric properties were determined. As x value increasing from 0.5 to 0.75, with high‐quality factor values (Q × f > 8000 GHz), both dielectric constant (ε_r) and temperature coefficient of resonant frequency (τ_f) dropped. The X‐ray diffraction patterns showed a single phase for all compositions. Typically, the research gained temperature coefficients at resonant frequency around + 10 ppm/°C, while kept high relative permittivity and quality factor value.     

High‐Q microwave ceramics of Li2TiO3 co‐doped with magnesium and niobium

In order to solve the problems of acceptor/donor individual doping in Li₂TiO₃ system and clarify the superiority mechanism of co‐doping for improving the Q value, Mg + Nb co‐doped Li₂TiO₃ have been designed and sintered at a medium temperature of 1260°C. The effects of each Mg/Nb ion on structure, morphology, grain‐boundary resistance and microwave dielectric properties are investigated. The substitution of (Mg_1/3Nb_2/3)⁴⁺ inhibits not only the diffusion of Li⁺ and reduction in Ti⁴⁺, but also the formation of microcracks in ceramics, which promotes the enhancement of Q value. The experiments reveal that Q × f value of Li₂TiO₃ ceramics co‐doped with magnesium and niobium is 113 774 GHz (at 8.573 GHz), which is increased by 113% compared with the pure Li₂TiO₃ ceramics. And the co‐doped ceramics have an appropriate dielectric constant of 19.01 and a near‐zero resonance frequency temperature coefficient of 13.38 ppm/°C. These results offer a scientific basis for co‐doping in Li₂TiO₃ system, and the outstanding performance of (Mg + Nb) co‐doped ceramics provides a solid foundation for widespread applications of microwave substrates, resonators, filters and patch antennas in modern wireless communication equipments.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.     

Bi(Zn2/3Nb1/3)O3–(K0.5Na0.5)NbO3 High‐Temperature Lead‐FreeFerroelectric Ceramics with Low Capacitance Variation in a Broad Temperature Usage Range

The xBi(Zn_2/3Nb_1/3)O₃–(1?x)(K_0.5Na_0.5)NbO₃ (abbreviated as xBZN–(1?x)KNN) ceramics have been synthesized using the conventional solid‐state sintering method. The phase structure, dielectric properties and “relaxorlike” behavior of the ceramics were investigated. The 0.03BZN–0.97KNN ceramics show a broad and stable permittivity maximum near 2000 and lower dielectric loss (≤5%) at a broad temperature usage range (100°C–400°C) and the capacitance variation (ΔC/C_150°C) is maintained smaller than ±15%. The 0.03BZN–0.97KNN ceramics only possess the diffuse phase transition and no frequency dispersion of dielectric permittivity, which indicates that 0.03BZN–0.97KNN ceramics is a high temperature “relaxorlike” ferroelectric ceramics. These results indicate that 0.03BZN–0.97KNN ceramics are excellent promising candidates for preparing high‐temperature multilayer ceramics capacitors.     

Temperature-dependent piezoelectric strain and resonance performance of Fe2O3-modified BiScO3-PbTiO3-Pb(Nb1/3Mn2/3)O3 ceramics

The piezoelectric strain and resonance performance of 0.37BiScO₃-0.6PbTiO₃-0.03Pb(Mn_1/3Nb_2/3)O₃ (BS-PT-PMN-xFe) ceramics with different amounts of Fe content addition were investigated from room temperature to 200 °C. Both the piezoelectric strain and resonance performance are improved by Fe addition in wide temperature range. Piezoelectric strain of BS-PT-PMN-xFe with 1 mol% Fe is 0.23%, which is comparable to that of BiScO₃-PbTiO₃ (BS-PT) ceramics, while the strain hysteresis is only one-third. At 200 °C, the high-field strain coefficient of BS-PT-PMN-Fe with 1 mol% Fe is as large as 700 pm/V. Variation of piezoelectric strain and hysteresis is clearly reducing by Fe addition. The maximum vibration velocity is enhanced up to approximately 1 m/s in 2 mol% Fe-modified BS-PT-PMnN-xFe ceramics, and the vibration velocity is stable from room temperature to 200 °C when the electric voltage magnitude was below 60 V_pp. These results indicate that BS-PT-PMN-xFe ceramics are potential candidates for high-temperature piezoelectric actuator application.     

Investigation of the Structure and Electrical Properties of (KxNa0.96−xLi0.04)(Nb0.96−yTaySb0.04)O3 Piezoelectric Ceramics Modified with Manganese

The effect of high doping levels of manganese (Mn) on the structure and electrical properties of (K_xNa_1?x)NbO₃ (KNN) ceramics containing Li, Ta, and Sb has been investigated. The samples were measured using synchrotron X‐ray diffraction whereas Rietveld refinement with Fullprof was used to determine the structural information as a function of temperature. Temperature‐dependent dielectric measurement was used to compare the phase transition temperatures. The results show that Mn decreases the temperature range of phase coexistence between the orthorhombic and tetragonal phase from ~180°C to ~120°C. The Curie temperature remained unchanged with Mn addition while the dielectric constant and dielectric loss increased with Mn addition. High amounts of Mn led to a reduction in both piezoelectric and ferroelectric properties. The remnant polarization, remnant strain, and piezoelectric coefficient values decreased from 24 μC/cm², 0.000824, 338 ± 37 pm/V to 13 μC/cm², 0,00014 and 208 ± 27 pm/V, respectively for the undoped and 5 mol% Mn‐doped sample.     

Microwave Dielectric Properties of Novel Glass‐Free Low‐Firing Li2CeO3 Ceramics

Novel glass–free low temperature firing microwave dielectric ceramics Li₂CeO₃ with high Q prepared through a conventional solid‐state reaction method had been investigated. All the specimens in this paper have sintering temperature lower than 750°C. XRD studies revealed single cubic phase. The microwave dielectric properties were correlated with the sintering conditions. At 720°C/4 h, Li₂CeO₃ ceramics possessed the excellent microwave dielectric properties of ε_r = 15.8, Q × f = 143 700 (GHz), and τ_f  = ?123 ppm/°C. Li₂CeO₃ ceramics could be excellent candidates for glass‐free low‐temperature co‐fired ceramics substrates.     

Study of Screen‐Printed PZT Cantilevers Both Self‐Actuated and Self‐Read‐Out

Usually, resonating cantilevers come from silicon technology and are activated with pure bending mode. In this work, we suggest to combine high‐sensitive cantilever structure with both self‐actuated and self‐read‐out piezoelectric thick‐film for high electrical–mechanical coupling. This cantilever is realized through screen‐printing deposition associated with a sacrificial layer. It is composed of a PZT layer between two gold electrodes. Optimum performances of piezoelectric ceramics generally imply the use of mechanical pressure and very high sintering temperature that are not compatible with the screen‐printing process. Addition of eutectic composition Li₂CO₃‐Bi₂O₃‐CuO or borosilicate glass‐frit to PZT powder and application of isostatic pressure improve the sintering at a given temperature. Firing temperature of 850°C, 900°C, and 950°C is tested. Microstructural, electrical and mechanical characterizations are achieved. In addition to the bending mode, the in‐plane 31‐longitudinal vibration mode and the out‐of‐plane 33‐thickness resonance mode are revealed. Correlations between experimental results and modeling of the different vibration modes are established. The piezoelectric parameters of PZT cantilevers approach those of ceramics. Quality factors between 300 and 400 associated with the unusual 31‐longitudinal mode make screen‐printed PZT cantilevers good candidates for detection in liquid and gaseous media.