PAR薄膜阻抗转变规律的研究

采用真空蒸发的方法制备了PAR薄膜，研究了不同外电路参数下薄膜的电双稳特性。发现薄膜在从高阻向低阻转变时会经历一个短暂的具有非线性阻抗的中间态，并且在整个转变过程中存在一种能量效应，即当外加电压超过某一值时，完成转变所需的能量不变。     

PAR薄膜阻抗转变规律的研究

采用真空蒸发的方法制备了PAR薄膜,研究了不同外电路参数下薄膜的电双稳特性。发现薄膜在从高阻向低阻转变时会经历一个短暂的具有非线性阻抗的中间态,并且在整个转变过程中存在一种能量效应,即当外加电压超过某一值时,完成转变所需的能量不变。     

Nc-Si:H薄膜器件的研究

介绍了氢化纳米硅(nc-Si:H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si:H薄膜结构之间的关系,阐述了新型器件的优点.     

在ECR等离子体中GaN薄膜沉积的研究

本文使用电子回旋共振等离子体增强化学沉积方法生长ＧａＮ。利用气体分配器产生一种局域高反应物浓度环境,在此环境下,测量了等离子体的电子温度Ｔｅ１等离子体密度ｎｉ以及饱和离子流密度Ｊ１与微波功率,气体压力的关系,根据这些参数,优选了沉积得到纯净的纤锌矿结构的ＧａＮ薄膜,并具有很好的光学特性,ＡＥＳ和ＸＰＳ的实验表明薄膜中的氮空位及伴生镓被抑制,根据膜厚值,计算出的沉积速度为１μｍ／ｈｒ,比通常的速度大     

ZnS：Mn^2＋薄膜电致发光器件中电子散射过程的研究

研究了薄膜电致发光器件中的电子散射过程，计算了ＺｎＳ：Ｍｎ＾２＋中声学声子，极化光学声子，电离杂质及谷间散射的几率随电子能量的变化关系，对各种散射这程了比较，发现极化光学声子散射及谷间散射较为重要，杂质散射的重要性取决于浓度的大小。同时研究了它们在不同能谷中的行为，进而研究了温度对散射过程的影响。     

ZnS∶Mn~(2+)薄膜电致发光器件中电子散射过程的研究

研究了薄膜电致发光器件中的电子散射过程,计算了ＺｎＳ∶Ｍｎ２＋中声学声子、极化光学声子、电离杂质及谷间散射的几率随电子能量的变化关系,对各种散射过程进行了比较,发现极化光学声子散射及谷间散射较为重要,杂质散射的重要性取决于浓度的大小。同时研究了它们在不同能谷中的行为。进而研究了温度对散射过程的影响。     

Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor

Average position of electrons along thickness direction in a Coulomb island in an n-channel Si single-electron transistor is estimated by analyzing the back-gate voltage dependence of peak voltage (defined as the gate voltage giving a drain current peak) as a function of peak number. It is found that the accuracy of estimated average position is better than 0.5 nm and that the average position fluctuates as the peak number increases.     

Creation of nanostructures on nickel thin films by STM

A scanning tunneling microscope (STM) has been used to create nanostructures on nickel thin films. A systematic procedure for the creation of such structures has been developed. Various possible mechanisms involved in such creations have been discussed. Based on our observations, a field-induced suction of the plastically deformed surface has been proposed.     

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low‐energy‐dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single‐electron transistor devices in Bi₂Te₃ nanoplates using state‐of‐the‐art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low‐temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well‐defined Coulomb current oscillations and Coulomb‐diamond‐shaped charge‐stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low‐energy‐dissipative devices, and quantum information processing.     

氧化亚锡薄膜晶体管的研究进展EI北大核心CSCD

p型金属氧化物材料氧化亚锡由于其特有的光学和电学性能,使得其在催化、传感、光电器件等领域受到越来越多人的青睐。本文重点介绍了氧化亚锡在薄膜晶体管中的研究应用,薄膜晶体管作为显示器驱动面板核心部件,其在显示器中的作用至关重要。本文归纳了氧化亚锡薄膜晶体管的研究进展,对氧化亚锡微观性能分析、氧化亚锡薄膜材料制备以及晶体管制备方法等进行介绍。通过对氧化亚锡晶体结构以及电子结构进行详细介绍,探讨了氧化亚锡性能微观调控机制;并通过对氧化亚锡材料的制备以及器件的应用研究,分析了氧化亚锡薄膜晶体管所面临的器件电流开关比低的问题并展望其在互补金属氧化物半导体器件方向的前景,以期为制备稳定和环保的p型金属氧化物薄膜晶体管提供参考。     

Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors

Thermally induced instability of amorphous Si-In-Zn-O (SIZO) with 1 wt.% silicon (Si) concentration and Ga-In-Zn-O (GIZO) with gallium (Ga) of 30 wt.% thin film transistors (TFTs) has been investigated, by comparing the density of states extracted from multi-frequency method. It was observed that the density of state of SIZO-TFT was lower than that of GIZO-TFT, in spite of low processing temperature of SIZO-TFT and thermally induced instability of SIZO- and GIZO-TFT was strongly related with the total trap density. We report that Si of only 1 wt.% in SIZO can improve thermal stability of threshold voltage of In-Zn-O based TFTs more effectively than Ga of 30 wt.% in GIZO.     

Formation of microcrystalline-Si thin film transistors by using self-aligned nickel-silicided process

The formation of microcrystalline-Si thin film transistors (μC-Si TFTs) by using self-aligned nickel-silicided process has been studied. The μC-Si TFTs have been generally fabricated as the top-gate staggered-type structure due to the limitation of process temperature up to 200 °C for practical device applications on organic polymer substrates. However, at the processing temperature of 200 °C, this proposed self-aligned nickel-silicided scheme can cause better device characteristics of μC-Si TFTs than the general top-gate staggered structure, without extra photo masking step. As compared to the general top-gate staggered structure, the self-aligned nickel-silicided scheme can lead to larger bending of energy band near the source region, which facilitates causing more carrier tunneling from the source contact electrode. As a result, this proposed self-aligned nickel-silicided scheme can obviously cause a larger on-state current of μC-Si TFTs than the previous top-gate staggered structure.     

Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

Characteristics of oxide semiconductor thin film transistor prepared by gravure printing technique were studied. This device had inverted staggered structure of glass substrate/MoW/SiNx/ printed active layer. The active layer was printed with precursor of indium gallium zinc oxide solution and then annealed at 550 °C for 2 h. Influences of printing parameters (i.e. speed and force) were studied. As the gravure printing force was increased, the thickness of printed film was decreased and the refractive index of printed active layer was increased. The best printed result in our study was obtained with printing speed of 0.4 m/s, printing force of 400 N and the thickness of printed active layer was 45 nm. According to AFM image, surface of printed active layer was quite smooth and the root-mean square roughness was approximately 0.5 nm. Gravure printed active layer had a field-effect mobility of 0.81 cm²/Vs and an on-off current ratio was 1.36 × 10⁶.     

室温固化耐温胶粘剂研究进展

对国内外室温固化耐温胶粘剂的研究现状进行了综述。重点介绍了几种可室温固化的有机胶粘剂,包括环氧树脂胶粘剂、有机硅胶胶粘剂以及它们的改性产品,简述了无机胶粘剂在室温固化和高温使用方面的情况。提出了室温固化高温型胶粘剂今后的研究和发展方向。