Electrical and optical properties of µc-SiH films

Microcrystalline silicon films have been found quite useful in amorphous silicon solar cells as a contact material in n-i-p cells. Microcrystalline silicon films are obtained when amorphous silicon films are prepared by R.F. glow discharge of SiH₄ + H₂ at higher power ratings. These films possess higher conductivity as well as high transmission than amorphous silicon films. The present paper reports the preparation technique ofμc-SiH films using R.F. capacitive glow discharge of hydrogen-diluted silane. X-ray studies andtem studies of the films indicate microcrystallinity of the films. The electrical and optical properties are also reported.     

Preparation,structure and dielectric properties of the system Sr1−xLaxTi1−xNixO3

Attempts have been made to synthesize the solid solution Sr_1–x La _x Ti_1–x Ni _x O₃ for x0.50 and its electrical behaviour has been studied. It was found that a solid solution forms for compositions up to x=0.10. The structure remained cubic. These compositions exhibited dielectric relaxator behaviour. The average grain size in these materials was very small.     

Electrical transport properties of as evaporated and annealed amorphous GexSe1−x thin films

D.C. conductivity measurements were made on evaporated and annealed amorphous Ge_xSe_1−x thin films as a function of temperature (80–330K) and composition (x = 1.0, 0.9, 0.7, 0.5, 0.3, 0.1). It was observed that for Ge-rich films (x = 1.0, 0.9, 0.7) the conduction in the high temperature region takes place due to thermally assisted tunneling of charge carriers in localized states at the band edges and at low temperatures conduction is due to variable range hopping in localized states near the Fermi level. For Se-rich films (x=0.5, 0.3, 0.1) the conduction is intrinsic in the entire temperature range of measurements. It was observed that annealing reduces the density of states at the Fermi level. At the highest annealing temperature films become polycrystalline.     

Structural and optical properties of Bi x Se1−x films

Bi _x Se_1–x thin films have been studied because of their structural and optical properties with a view to judging their suitability as the recording medium in phase-change type optical recording. Amorphous films deposited at room temperature were crystallized by thermal annealing. X-ray diffraction analysis and surface morphological studies are reported. A maximum reflectivity difference of 25% at =830 nm was obtained upon amorphous-to-crystalline transition. The optical constants calculated by the Newton-Raphson method using the experimental transmittance, reflectance and thickness data are reported.     

Electrical and dielectric properties of nano crystalline Ni–Co spinel ferrites

Nanocrystalline samples of Ni_xCo₁–_xFe₂O₄, where x = 1, 0.8, 0.6, 0.4, 0.2 and 0, were synthesized by chemical co-precipitation method. The spinel cubic phase formation of Ni–Co ferrite samples was confirmed by X-ray diffraction (XRD) data analysis. All the Bragg lines observed in XRD pattern belong to cubic spinel structure of ferrite. Scanning Electron Microscopy (SEM) technique was used to study the surface morphology of the Ni–Co ferrite samples. Nanocrystalline size of Ni–Co ferrite series was observed in SEM images. Pellets of Ni–Co ferrite were used to study the electrical and dielectric properties. The resistivity measurements were carried out on the samples in the temperature range 300–900 K. Ferrimagnetic to paramagnetic transition temperature (T_c) for all samples was noted from resistivity data. The activation energy below and above T_c was calculated. The dielectric constant (ɛ′) measurements with increasing temperature show two peaks in the temperature range of measurements for all samples under investigation. The peaks observed show frequency and compositional dependences as a function of temperature. Electrical and dielectric properties of nanocrystalline Ni_xCo₁–_xFe₂O₄ samples show unusual behavior in temperature range of 500–750 K. To our knowledge, nobody has discussed such anomalies for nanocrystalline Ni_xCo₁–_xFe₂O₄ at high temperature. Here, we discuss the mechanism responsible for electrical and dielectric behavior of nanocrystalline Ni_xCo₁–_xFe₂O₄ samples.     

Structural and optical properties of novel optoelectronic Tl1−xIn1−xSixSe2 single crystals

Principal optical properties of Tl_1?xIn_1?xSi_xSe₂ solid state crystalline alloys were studied. The influence of the x on the principal optical and structural features was explored. Temperature features of the band energy gap are studied. The possible explanation of the observed behavior is given within a framework of the Urbach rule approach. The role of intrinsic defective sub-system and anharmonic electron–phonon interaction is discussed. A possible application of the titled materials for the infrared optoelectronic is discussed. The replacement of In atoms by Sn is evaluated. Additionally studies of influence of x on the optoelectronic features is done. The formation of the positive charged ions (donors) and negatively charged ions is explored within the introduced intrinsic defect models.     

Electrical transport,optical and thermal properties of polyaniline–pumice composites

In this study, electrical conductivity, photoconductivity, absorbance and thermal properties of polyaniline (PANI) and polyaniline–pumice composites were investigated. Temperature dependent conductivity and photoconductivity measurements were carried out in the temperature range of 80–400 K. The measurements revealed that the dominant conduction mechanisms in polyaniline and 15% pumice doped composite were hopping conduction. The low activation energies calculated for 36% pumice doped composite indicated that this sample has highly defective and degenerate structure due to the high pumice content. Polyaniline and pumice doped composites showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Photoconductivities of the PANI and PANI–pumice composites under various illumination intensities were studied and it was found for all samples that the conductivity increased with increasing temperature and light intensity, but decreased with increasing pumice content in the structure. Absorbance spectrum has been determined in the wavelength range of 300–700 nm and it was found that the band gap values decreased as the pumice content was increased. Thermogravimetric analysis have shown for all samples that the mass loss has started above around 300 K due to the loss of moisture from the structures. As a result of this work, it was found that polyaniline and polyaniline–pumice composites had low resistivity and high band gaps and could be used as a window layer semiconductor in heterojunction solar cell applications.     

Effects of the intercalation time on the dielectric properties of Na2xMn1−xPS3

Manganese thiophosphate powders have been intercalated with sodium ions at two different intercalation times (150 min and 180 min) in order to evaluate the influence of this parameter on the dielectric properties of the obtained compounds labeled like Na_2xMn_1?xPS₃. In particular, dielectric permittivity measures have been carried out as a function of temperature (80 K–350 K) and frequency (20 Hz to 1 MHz) and compared with each other and with those of the pure matrix and of the Na_2xMn_1?xPS₃ compound corresponding to a 120 min intercalation time. Both investigated compounds show a dielectric response characterized by a loss peak at low temperatures, by a strong dispersion at low frequency and at not very high temperatures and by a crossover frequency showing an Arrhenius temperature dependence in agreement with what already observed in Na_2xMn_1?xPS₃ (120 min). The results have been also discussed in terms of ac conductivity, Maxwell–Wagner–Sillar (MWS) polarization, electrode polarization and dc conductivity and all the above cited features have been attributed to the Na⁺ ions which are, by their nature, hopping charge carriers that behave like jumping dipoles in their alternate motions and simultaneously show conducting characteristics resulting from their extended hopping over many sites. This attribution allows us to classify the analyzed sodium compounds like hopping charge carrier systems in which a greater Na intercalation time translates into a decrease in the loss peak intensity and an increase in the activation energy associated to the crossover frequency.     

Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics

The crystalline structure and dielectric properties of BaZr _x Ti_1−x O₃ ceramics with x = 0.05, 0.10, 0.15, and 0.20 were investigated. As zirconium increased, the a-axis lattice constant gradually increased, however, the c-axis lattice constant and c/a ratio gradually decreased. When x = 0.20, the crystal structures of the BZT ceramics are very close to cubic, different from the tetragonal structure when x < 0.20. The temperature dependence of the dielectric constant was studied and an enhanced diffuse phase transition behavior is found to be caused by the increased Zr content. The decreases of coercive electric field and remanent polarization were the result of increase of Zr/Ti ratio in BaZr _x Ti_1−x O₃.     

Structure and dielectric properties of Nd x Sr1−x TiO3 ceramics for energy storage application

Polycrystalline Nd-doped SrTiO₃ ceramics with the formula Nd _x Sr_1?x TiO₃ (NSTO, x = 0, 0.024, 0.056, 0.104, 0.152, 0.200) were prepared by solid state reaction route. X-ray diffraction (XRD) analysis confirmed the formation of monophasic compounds and indicated the structure to be changed from cubic to tetragonal by increasing Nd doping concentrations. A remarkable decrease in grain size from ~30 μm for un-doped SrTiO₃ ceramics to ~1 μm for Nd-doped SrTiO₃ ceramics with x = 0.024 was observed by scanning electron microscopy. The grain size had a degree of increasing with further increasing Nd doping concentration and reached ~3 μm when the x value was 0.200. The dielectric properties of NSTO ceramics were measured at 1 kHz in ambient temperature. It revealed that the dielectric constant dramatically increases for the reason of Nd doping, leading to a maximum value of 19,800 for as-sintered sample with x = 0.104. The breakdown strength of all Nd-doped SrTiO₃ samples was found to be higher than 10 kV/mm. The relationship between dielectric properties and the microstructure feature, as well as the defect structures correlated with the charge compensation induced by trivalent Nd³⁺ doping, was discussed tentatively.     

Synthesis and dielectric and nonlinear properties of BaTi1 − x Zr x O3 ceramics

We have studied the formation of BaTi_{1 ? x} Zr _x O₃ solid solutions with the perovskite structure. The phase composition, microstructure, and electrical properties of the BaTi_{1 ? x} Zr _x O₃ materials have been investigated. The results demonstrate that their dielectric permittivity (?) and loss tangent (tan δ) decrease with increasing zirconium content. At the same time, their nonlinearity coefficient (n ^R ) remains large (n _R = 30–50%) in relatively low fields (E = 30–50 kV/cm). The present data suggest that the materials studied here are potentially attractive for use in creating nonlinear devices of modern microelectronics.     

Dependence of structural, optical and electrical properties on substrate temperature for hexagonal MgxZn1−xO films

Single hexagonal-phase Mg_xZn_1?xO films were deposited on glass substrates by pulsed laser deposition from a ZnO target mixed with MgO. The effect of substrate temperature on the structural, electrical and optical properties was investigated by X-ray diffraction and the transmittance measurements. It was observed that Mg incorporation lead to a clear shift of the (002) peak position to lower angle with reference to pure ZnO films due to the residual stress change with deposition temperature. It was also found that Mg doping increased the resistivity by 2 orders of magnitude and the maximum resistivity was 0.072 Ω·cm at 550 °C with the carrier concentration of 1.1 × 10¹⁹ cm^?3. The visible transmittance of above 80 % was obtain in the alloy films, which optical band gap was observed to increase with the substrate temperature, attaining 3.85 eV at 600 °C. The possible mechanism was discussed.     

Improvement of dielectric,optical, and photocatalytic properties of rare earth (Y) substituted Co−Mg nanoferrites

Journal of Materials Science: Materials in Electronics - The dielectric, optical and photocatalytic properties of yttrium (Y) substituted cobalt?magnesium (Co0.7Mg0.3YxFe2-xO4) (labeled as...     

Electrical and optical properties of InP nanowire ensemble p⁺-i-n⁺ photodetectors

We report on a comprehensive study of electrical and optical properties of efficient near-infrared p?-i-n? photodetectors based on large ensembles of self-assembled, vertically aligned i-n? InP nanowires monolithically grown on a common p? InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely ～100 fA/nanowire at 1 V reverse bias. The detectors display a linear increase of the photocurrent with reverse bias up to about 10 pA/nanowire at 5 V. From spectrally resolved measurements, we conclude that the photocurrent is primarily generated by funneling photogenerated carriers from the substrate into the NWs. Contributions from direct excitation of the NWs become increasingly important at low temperatures. The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires.     

Effect of chemical composition and Co-core size on the magnetic and magneto-transport properties of CoyAg100−y core–shell nanocrystallites

This paper describes the applicability of a modified polyol process in conjunction with a transmetallation reaction in synthesis of Co_yAg_100?y nanocrystallites of a core–shell structure. The substitution Co → Ag is varied as 20 ≤ y ≤ 95 by tuning the microstructure with functional magnetic and giant magneto resistance properties. The existence of core–shell structures was confirmed through transmission electron microscope and the size of Co-core increased from 8 to 50 nm with decrease in Ag-content of the sample. The magnetic behaviour of the sample changed from a pseudo-superparamagnetic nature to ferromagnetic with increase in Co-core size. Normalised saturation magnetisation values increased from 89.5 to 128.6 emu/g with increase in size of Co-core; however, none of the ferromagnetic samples exhibited any magneto resistance (MR). A value of 2.0% MR was observed in case of Co_20.6Ag_79.4 which increased to a maximum of 3.6% MR for Co_36.6Ag_63.4 sample when measured at 5 K.     

Electrical and dielectric properties of sol–gel derived mullite doped with transition metals

Highly crystallized mullite composite has been synthesized at 1000 °C and 1300 °C via sol–gel technique in the presence of transition metal ions such as cobalt, nickel and copper. The dielectric properties (dielectric constant, loss tangent and a.c. conductivity) of the composites have been measured at room temperature and their variation with increasing frequency and concentration of the doped metals has been investigated. The composite doped with nickel exhibits minimum dielectric constant of 3.15 at 0.002(M) concentration at a frequency of 1.5 MHz. Experimental data shows a linear increase in a.c. conductivity with increasing concentration of metal doping ions .The dielectric constant and loss tangent of the composites are within the range of requirements for commercial use in electronics.     

Nanostructure, optical and photoluminescence properties of Zn1−xNixO nanoclusters by co-precipitation method

Zn_1?xNi_xO (x = 0, 0.01, 0.02, 0.03, 0.04 and 0.05) nanoclusters have been successfully synthesized by co-precipitation method. The synthesized samples have been characterized by powder X-ray diffraction, energy dispersive X-ray spectra, UV–visible spectrophotometer and Fourier transform infrared spectroscopy. The XRD and SEM measurements reveal that the prepared undoped and Ni-doped nanoclusters have different microstructure without changing a hexagonal wurtzite structure. The calculated average crystalline size from XRD measurement decreases from 37.5 to 26.6 nm for x = 0 to 0.05 which was confirmed by SEM micrographs. The change in lattice parameters, micro-strain, shift of XRD peaks and the blue shift of energy gap from 3.18 to 3.33 eV (ΔE_g = 0.15 eV) for Ni = 0–0.02 and red shift of E_g from 3.33 to 3.14 eV (ΔE_g = 0.19 eV) for Ni = 0.02 to 0.05 reveal the substitution of Ni²⁺ ions into Zn–O lattice. The presence of functional groups and the chemical bonding are confirmed by FTIR spectra. The shift of NBE UV emission between 374 and 395 nm, the shift of green band emission between 517 and 531 nm, the change in intensity and the broadening effect in the photoluminescence spectra confirms the substitution of Ni²⁺ ions into the Zn–O lattice. Ni-doped ZnO system shows a great pledge for the fabrication of nano-optoelectronic devices like tunable light emitting diode in the near future.     

Giant dielectric properties of nanocrystalline Pb1−xSnxF2 solid solutions

Nanocrystalline Pb_1?xSn_xF₂ (x = 0.2, 0.3) solid solutions have been synthesized by mechanochemical milling at room temperature with grain size as small as 26 nm. These fluoride ion conducting materials exhibit giant values of the dielectric constant of ?′ > 10⁵ that is independent of temperature and frequency over wide ranges. The giant values of ?′ are suggested to be due to internal effects in the materials. The dielectric response has been analyzed by appropriate equivalent circuit representing the grain and internal effects in the materials. Interestingly, the dielectric constant of the current samples is found to be larger for the samples with smaller grain size, a behavior that is quite opposite to what usually observed in giant dielectric oxide materials, where ?′ is enhanced with substantial growth of the grain size. The possible origin of the giant dielectric constant is discussed in the present study.     

Electronic and optical properties of (Al x Ga1−x )1−y Mn y As single crystal: a new candidate for integrated optical isolators and spintronics

We have explored the electronic and optical properties of cubic (Al _x Ga_1?x )_1?y Mn _y As system using the FP-LAPW method. The unit cell has 64 atoms, so that one manganese (Mn) atom is placed in the position of gallium site, which corresponds to 3.125 % doping concentration with x = 12.5 %. Our calculations, using local density approximation + U (Hubbard parameter) scheme, predict that the ferromagnetic state for AlGaMnAs, with a magnetic moment of about 4.014 μ_B per Mn dopant is more favorable. Despite its electronic properties being strongly affected by inducing small amounts of Mn substitutional atoms in the cationic sublattice of AlGaAs, (Al _x Ga_1?x )_1?y Mn _y As possesses optical properties strictly less than those of Al _x Ga_1?x As, especially its optical conductivity at the peak 1.256 eV. The results indicate that AlGaMnAs may be a good candidate for optoelectronics when exploited in optical fiber networks, and it can still be of great interest because of its promising potential when used for spintronics.     

Electrical properties and phase transition of Ge1−x Sn x Se2.5 thin films

The Ge_1–x Sn _x Se_2.5 system was prepared by melting the correct ratio of high purity elements in quartz evacuated ampoules followed by quenching in ice. It was found that, within the Ge_1–x Sn _x Se_2.5 system, a glassy state can be formed when 0 x 0.4. On increasing x to 0.6 a glassy state could not be obtained, as is confirmed by X-ray diffraction. Differential thermal analysis (DTA) was carried out to study the effect of composition on the stability of amorphous phase. Ge_1–x Sn _x Se_2.5 (where 0 x 0.6) thin films have been prepared by the thermal evaporation technique. The electrical conductivity of the thin films have been studied as a function of composition and film thickness.