Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs

The authors report the first realisation of a two-dimensional photonic bandgap structure with a period of λ₀/2n in the GaAs/AlGaAs material system. The structure consists of a honeycomb lattice with a wall thickness of ~30 nm and a period of 160 nm. It was found that, to realise patterns of such small size and periodicity, it is crucial to control the shape of the exposed features     

Non-uniform distributions of photonic bandgap microstripline structures

With the advent of planar photonic bandgap (PBG) materials different topologies of PBG structures have been proposed to improve the bandpass and band rejection performances of microwave signals. Conventional circular patterned PBGs have constraints in the broadband performance due to the high ripple heights in S-parameters. In this paper, we suggest two novel configurations with non-uniform dimensions of circular patterned PBG to improve the stopband bandwidth and the ripples. The dimensions of the circles are varied proportionally to the Binomial and Shebyshev polynomial distributions. The S-parameter performances with respect to frequencies have been presented. It is seen that Shebyshev distribution produce excellent performances by suppressing ripples and generating sharp cut-offs.     

Modeling of fully etched waveguiding photonic bandgap structures

Modeling of a 1-D finite-height, finite-length fully etched waveguiding photonic bandgap structures, based on the leaky mode propagation method, is proposed for the first time. So far only infinitely long gratings have been modeled by this approach. Finite extension structures having deep grooves, high refractive index contrast, and an arbitrary profile of the etched region can be modeled in very short computer time, starting from the infinitely-long photonic bandgap structure. Useful analytical and closed-form expressions for the reflection and transmission coefficients and out-of-plane losses are derived, which are valid for any operating conditions. One of the most important applications of the model relevant to 1-D photonic bandgap devices is to determine the losses occurring also in 2-D devices. Comparisons of results in terms of transmittance, losses, bandgap position and complex propagation constant with those obtained by the bi-directional mode expansion and propagation method and an exact vectorial method show an excellent agreement together with a strongly reduced CPU time for our method. Full investigations of three different etching profiles (i.e., rectangular, triangular and saw-tooth) are carried out. Particular attention is paid to the physical behavior around the first and second Bragg interaction regions. We demonstrate that the rectangular shape exhibits the highest losses and the widest bandgap, while the saw-tooth grating exhibits the lowest losses and the narrowest bandgap. Quick and accurate determination of the out-of-plane losses in a large variety of photonic bandgap devices is also demonstrated     

Multiple defect characterization in finite-size waveguiding photonic bandgap structures

A powerful and efficient model recently proposed by the authors based on the leaky mode propagation method is used to characterize photonic bandgap structures incorporating multiple defects, having arbitrary shape and geometrical parameter values. The importance of the defect-mode characterization in photonic bandgap materials is due to the intensive use of defects for light localization to design very promising optical devices. This paper provides a new, efficient method to model defects in waveguiding, finite-size photonic bandgap devices and analytical and closed-form expressions for the reflection and transmission coefficients and out-of-plane losses,which is very useful and easily implemented under any operating conditions. Moreover, the method has been applied to examine the capabilities of waveguiding photonic bandgap devices in dense wavelength division multiplexing filtering applications. Therefore, the design of two optical filters for such applications has been carried out and optimal design rules have been drawn using the new model.     

Modelling waveguiding photonic bandgap structures by leaky modepropagation method

A model of one-dimensional fully etched waveguiding photonic bandgap (FWPBG) structures, based on the leaky mode propagation (LMP) method, is proposed for the first time, to perform a complete analysis of the propagating characteristics including the radiation loss for a structure of finite extension     

对称和非对称结构1维光子晶体的滤波特性

为了得到1维光子晶体新的滤波特性,并把这种特性应用到滤波器的设计中,采用传输矩阵法计算了对称和非对称结构1维光子晶体的滤波特性,同时还分析了不同的折射率比对两种结构1维光子晶体滤波特性的影响。结果表明,对称结构1维光子晶体可实现窄带滤波功能,该结构的滤波器对入射角的选取是有限制的,不适于微弱信号的检测;且当多层膜系外层为高折射率时,透射带宽要窄些。非对称结构光子晶体则具有带阻滤波特性,与对称结构1维光子晶体最大的不同是改变膜系中高低折射率材料的顺序,其滤波特性没有变化。理论分析和数值模拟结果为设计窄带滤波器和带阻滤波器提供了依据。     

Fiber-optic multiple-wavelength filter based on one-dimensional photonic bandgap structures with defects

In this paper, a theoretical analysis is given of an optical fiber multiple-wavelength tunable filter based on a one-dimensional (1-D) photonic bandgap (PBG) structure with four defects. To understand the positioning of the modes in the bandgap, a previous analysis of structures with one and two defects is performed. By adequate parameterization, it will be possible to control the central wavelengths of the various filters of the device. Parameters responsible for this effect are the contrast of refractive indexes of high- and low-index layers, the optical thickness of the defects, and the number of layers stacked among the defects related to those stacked at the extremes. In addition to this, the finesse of the filters can be controlled by the adequate addition of layers among defects. As a result, a simple 1-D PBG structure with defects will permit designing almost any multiple-wavelength filter, with immediate application in the treatment of wavelength-division-multiplexed (WDM) signals. The possibility of the tunability of this device can be introduced if materials are included whose refractive index changes with some parameter, such as temperature, voltage, or strain. As an example, liquid crystals change their refractive index with an applied voltage, leading to a shift of the central wavelengths of the filters.     

大带隙2维正方晶格光子晶体的优化设计

为了研究2维正方晶格光子晶体的完全带隙特性,采用平面波展开方法模拟了两种结构2维光子晶体,在固定光子晶体周期常数a的前提下,研究了2维正方晶格光子晶体的完全禁带随柱半径和折射率的变化规律。结果表明,以空气为背景的锗介质柱组成的光子晶体,随着半径的增大,完全带隙宽度先增大后减小最后消失,填充比为38.3%时,同时增大介质柱的介电常数,在介质柱折射率为4.2处,完全带隙最大,带宽是0.02754(ωa/(2πc));以锗为背景的空气柱组成的光子晶体,光子禁带对应的无量纲频率随半径的增大而增大,填充比为48.3%时,同时增大背景介质的介电常数,出现多个完全带隙,在背景折射率为6.2处,完全禁带最大,带宽为0.02922(ωa/(2πc))。光子晶体带隙的频谱响应也表明了完全带隙的范围。这为大带隙2维正方晶格光子晶体的设计和制备提供了依据。     

Properties of photonic bandgap in one-dimensional mutlicomponent photonic crystal

Photonic crystals have beenthe subject of researchformore than one decade since the year 1987 when E.Yablonovlitch[1]and S.John[2]first discovered them.Aphotonic crystal is a structure whose refractive indexismodulated periodically,and the resultant photo…     

Nanofabrication of gallium nitride photonic crystal light-emitting diodes

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted light. This paper describes three nano lithography techniques for patterning photonic crystal structures on the emitting faces of LEDs: direct-write electron beam lithography, hard stamp nanoimprint lithography and soft-stamp nanoimprint lithography with disposable embossing masters. In each case we describe variations on the technique as well as its advantages and disadvantages. Complete process details have been given for all three techniques. In addition, we show how high performance GaN dry etch techniques, coupled with optical process monitoring can transfer resist patterns into underlying GaN material with high fidelity.     

Characteristics of a photonic bandgap single defect microcavityelectroluminescent device

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70-Å compressively strained In_0.15Ga_0.85As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β≈0.06     

一维光子晶体滤波器的研究进展

光子晶体最显著的特点是抑制某些频率电磁波,产生光子禁带,实现对光子的优良滤波性能.在此介绍了目前一维光子晶体滤波器的基本理论、实验进展以及一维光子晶体滤波器的主要应用类型.     

四方格子全固光子带隙光纤带隙特性研究

基于平面波展开法,对四方格子全固光子带隙光纤带隙随结构的变化特性进行了数值模拟,并与具有相同结构参数三角格子全固光子带隙光纤进行了比较,数值结果表明带隙的位置由高折射率棒的结构参数决定,而与高折射率棒的排列方式和棒之间的间距无关,这一结果与反谐振效应非常吻合。最后对理想和实际拉制出的四方格子的全固态光子带隙光纤的带隙进行了比较,得出了在设计光纤时,应利用较低的带隙的结论。     

Meander microstrip photonic bandgap filter using a Kaiser taperingwindow

Compact photonic bandgap structures in microstrip technology with reasonable physical sizes have recently been proposed as efficient frequency-band reflectors. Here, it is shown how the application of a Kaiser tapering window to the periodic pattern etched in the ground plane of the structure provides appreciable performance improvement, reducing both passband ripple and stopband attenuation and increasing bandwidth     

Honeycomb photonic bandgap fiber with a modified core design

Air-silica honeycomb fiber with a modified core design is introduced. The core has a concentrated high-index region. Such core design helps defect core mode stay in the cladding's photonic bandgap for a longer wavelength range (>1000 nm) as compared to conventional design. We further point out the importance of our core design in reducing the number of defect modes supported by the fiber structure.     

新型复式矩形光子晶体完全带隙分析

文章提出一种复式矩形光子晶体结构,首先利用平面波展开法(PWM)计算这种光子晶体的能带结构,然后对结构参数值进行优化,得到较大的光子带隙.分析结果表明, 当采用单晶硅作为介质柱材料时,长方晶格的晶格常数比值为0.35～0.45,正方介质柱边长与长方晶格长轴比值为0.45～0.50,得到的完全带隙可达到0.50～0.58,完全带隙率达到近39%,这对于研制性能优良的光子晶体器件具有重要意义.     

光子带隙型光子晶体光纤温度传感特性分析

为了提高光子带隙型光子晶体光纤的温度灵敏度,提出了在纤芯环上并入高折射率液体圆柱的新结构,并利用全矢量有限元法对提出的结构进行了仿真,得到了温度对光纤有效折射率、纤芯能量和有效模面积等传输特性的影响。结果表明,随着温度的升高,光纤的有效折射率和有效模面积会减小,纤芯能量会增加,且零群速率色散点向短波长方向移动,尤其在短波长条件下光纤传输特性随温度变化趋势更加明显。该研究提高了光子带隙型光子晶体光纤传输特性的温度灵敏度,使其更加适合于温度传感方面的应用。     

光子带隙光纤准直器回波损耗研究

研究了一种光子带隙光纤准直器。为了降低回波对光源的干扰,通常光纤准直器的回波损耗不应低于60 dB。由于带隙光纤端面没有反射,因此满足这一条件的带隙光纤准直器GRIN透镜入射面的倾斜角与普通光纤准直器不同。从高斯光束通过光学系统的一般模型出发,利用矩阵光学和高斯光束耦合理论,推导了光线传输矩阵。结合实际应用中光纤及GRIN透镜的参数,仿真分析了尾纤与GRIN透镜之间的间距及GRIN透镜的参数对准直器回波损耗的影响。结果表明,镀有增透膜时,当光子带隙光纤准直器的GRIN透镜入射面倾角等于3时,回波损耗大于60 dB。研究结果对进行光子带隙光纤准直器的设计具有指导意义。     

1维全息光子晶体的偏振特性

为了研究两种偏振光通过1维光子晶体的偏振特性,采用传输矩阵法做了相关计算,得到介质折射率、折射率调制的变化,在光正入射和倾斜入射时对不同偏振光的禁带都有影响的结果。结果表明,当光线正入射的时候,折射率和折射率调制的变化都不会影响禁带位置,折射率增大,禁带宽度减小;折射率调制增大,禁带宽度变大,正入射时p偏振、s偏振的禁带完全重合;当光线以一定的角度照射到介质表面上时,两种偏振态下禁带位置随折射率调制的增大移向低频,带的中心位置一样,禁带宽度变大。两种偏振态下禁带带宽随折射率的增大变窄,禁带中心移向低频,s偏振的带宽减小得更明显;介质厚度对不同偏振态下禁带没有任何影响。这为设计1维全息光子晶体偏振片提供了理论依据。     

1维光子晶体的带隙研究

为了得到给定波长为通带或禁带的光子晶体,采用光学传输矩阵方法,模拟研究了由光子带隙结构如何得到相应的光子晶体结构.通过优化计算得到了指定波长带隙结构的光子晶体.结果表明,光学传输矩阵法完全能得到给定波长为通带或禁带的光子晶体.这一结果有助于光子晶体的广泛应用.