A low-power high-speed ion-implanted JFET for InP-based monolithic optoelectronic IC's

We describe a high-performance fully ion-implanted planar InP junction FET fabricated by a shallow (4000-Å) n-channel implant, an n⁺source-drain implant to reduce FET series resistance, and a p-gate implant to form a shallow (2000-Å) abrupt p-n junction, followed by a rapid thermal activation. From FET's with gates 2 µm long, a transconductance of 50 mS/mm and an output impedance of 400 Ω.mm are measured at zero gate bias with a gate capacitance of 1.2 pF/mm. The FET has a threshold voltage of -2.4 V, and a saturated drain current of 60 mA/mm at Vgs= 0 V with negligible drift.     

Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices

The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, which leads to a simple way to obtain three different bandgaps in a single intermixing step.     

Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits

A double photodiode (DPD) and a phototransistor were implemented in an industrial 0.8 μm bipolar complementary metal oxide semiconductor (BiCMOS) n-well process. Both devices are 100% BiCMOS compatible, so that no process modifications were necessary. A −3 dB bandwidth of more than 200 MHz was measured for the DPD. The rise and fall times of the photodiode are less than 1 ns. By an optimized antireflection coating layer for a wavelength of 638 nm a quantum efficiency of η=95%, which corresponds to a responsivity of R=0.49 A/W, is achievable. A phototransistor with a light-sensitive area of 53×53 μm² was developed. Its current amplification of B=300 results in a much larger responsivity compared to the photodiodes. Measurements have shown a −3 dB bandwidth of 7.8 MHz for the phototransistor.     

GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk

The letter focuses on the measurement of speed and crosstalk characteristics of a photoreceiver array which is composed of metal-semiconductor-metal (MSM) photodiodes and metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a semi-insulating (SI) GaAs substrate. We have obtained excellent eye diagrams at 2 Gbit/s, NRZ, and little crosstalk between nearest-neighbour channels of ?27 dB at 1.2 GHz.     

Design and fabrication of integrated Si-based optoelectronic devices

We have designed and fabricated novel Si-based optoelectronic devices. To this aim, different Si-based optical sources have been made and their performances at room temperature compared. Er-doped Si p–n junctions, operating at 1.54 μm and exhibiting an efficiency of 0.05% at room temperature, have been integrated with planar Si rib waveguides using either epitaxial Si or silicon on insulators (SOI) wafers. Optical characterization of these waveguides reveals very low transmission losses (below 1 dB/cm). However, Er-doping of the waveguide core, needed for the realization of the light source, results in a large increase of the losses as a consequence of absorption by the free electrons introduced by the rare earths. These losses can be suppressed when the junction is reverse biased and the whole Er profile is embodied in the depletion layer. Since this also allows efficient pumping of Er ions by hot carriers, the performances of the diodes and of the waveguides can be suitably combined. This optimized structure has also been used to design electrically pumped optical amplifiers and lasers, whose performances have been simulated.     

Manufacturing cost analysis of optoelectronic integrated circuits

A modified version of a recently proposed cost model for millimeter and microwave integrated circuits is applied to the cost analysis of optoelectronic integrated circuits. The particular example that is examined is a four-function receiver module for optical interconnects. On the basis of this analysis, it is concluded that the lowest receiver module cost, for any level of production, is achieved by integrating the receiver at the rate of two functions per chip, rather than a full single-chip integration of the receiver. This observation is the result of the loss of functional yield and a reduction of the number of die per wafer incurred by the increased die size     

Design and optimization of a novel InP-based monolithically integrated optical channel monitor

The design and optimization of a novel InP-based monolithically integrated optical channel monitor are presented. The device, which comprises a flat-field echelle grating and a slab photodetector array, can monitor signals in 40 wavelength channels separated by 100 GHz. The authors' simulations show that the novel design can result in a device of a smaller size and with a flatter and wider passband than those reported previously. It also features simpler fabrication without the need for output waveguides, thus eliminating issues related to fabrication-sensitive waveguide couplings. The shape of the slab waveguide detectors and the vertical layered structure are optimized to obtain a low crosstalk and a low polarization dependence.     

Large-signal characteristics of InP-based heterojunction bipolartransistors and optoelectronic cascode transimpedance amplifiers

A large-signal model for InP/InGaAs-based single HBTs incorporating soft-breakdown effects to the LIBRA Gummel-Poon (GP) model is developed and its validity is established from DC to microwave frequencies and over a wide range of input excitation levels. The large-signal characteristics of a cascode InP-based transimpedance optoelectronic preamplifier employing such devices are studied. Gain compression for the preamplifier was found to take place at an input power level of -20 dBm. Input power excitation varying from -65 to -5 dBm results in a degradation of the amplifier transimpedance gain of the order of 3 dBn. Experimental and theoretical characteristics are presented for the InP-based HBTs and transimpedance amplifier. Self-biasing effects are suggested as possible origin of the transimpedance variations with input power     

Large-system performance analysis of blind and group-blindmultiuser receivers

We present a large-system performance analysis of blind and group-blind multiuser detection methods. In these methods, the receivers are estimated based on the received signal samples. In particular, we assume binary random spreading, and let the spreading gain N, the number of users K, and the number of received signal samples M all go to infinity, while keeping the ratios K/N and M/N fixed. We characterize the asymptotic performance of the direct-matrix inversion (DMI) blind linear minimum mean-square error (MMSE) receiver, the subspace blind linear MMSE receiver, and the group-blind linear hybrid receiver. We first derive the asymptotic average output signal-to-interference-plus-noise ratio (SINR) for each of these receivers. Our results reveal an interesting "saturation" phenomenon: The output SINR of each of these receivers converges to a finite limit as the signal-to-noise ratio (SNR) of the desired user increases, which is in stark contrast to the fact that the output SINR achieved by the exact linear MMSE receiver can get arbitrarily large. This indicates that the capacity of a wireless system with blind or group-blind multiuser receivers is not only interference-limited, but also estimation-error limited. We then show that for both the blind and group-blind receivers, the output residual interference has an asymptotic Gaussian distribution, independent of the realizations of the spreading sequences. The Gaussianity indicates that in a large system, the bit-error rate (BER) is related to the SINR simply through the Q function     

A high-speed eight-channel optoelectronic integrated receiver arraycomprising GaInAs p-i-n PD's and AlInAs/GaInAs HEMTs

The successful fabrication of an eight-channel optoelectronic integrated receiver array on an InP substrate, which comprises eighty elements including GaInAs p-i-n photodiodes (PDs) and AlInAs/GaInAs HEMTs, is reported. An average bandwidth of 1.2 GHz with a standard deviation of 190 MHz over the whole channel was obtained. An average responsivity was 546 V/W with a standard deviation of only 19.2 V/W. A crosstalk was less than -30 dB at frequencies between 3 and 900 MHz and as small as -28 dB even at 1 GHz. The yield of chips available for 1.0 Gb/s operation was as high as 62.5% over 2-in-diameter wafer     

Computer-aided design of hybrid and monolithic broad-bandamplifiers for optoelectronic receivers

In very-high-data-rate fiber-optic systems, it is necessary to have an ultrawideband, high-gain, low-noise amplifier after the front end. The authors show how powerful analytical techniques, such as the real frequency technique, can be applied to the design of a 4-MHz-7-GHz amplifier. A two-stage monolithic amplifier designed according to the theory gives 17-dB gain; a three-stage hybrid amplifier exhibits 16-dB gain across the same frequency band. The gain, noise figure, and pulse response of each amplifier are presented     

Design and performance of an optoelectronic matrix switch usingSi-p-i-n photodiodes

Switching speed, isolation, optical-source requirements, and attainable matrix dimensions of an optoelectronic matrix switch using Si p-i-n photodiodes are discussed. By charging the internal capacitance of the diode with a photocurrent, forward bias voltages are attained that establish off-states. The novel features of the matrix switch are that the switch elements have high output impedance at off-states, and no electrical power is required to establish the off-states. This leads to advantages in fabricating large-dimension matrix switches     

中继卫星地面高速数据分发设备设计与性能分析

针对跟踪与数据中继卫星系统（TDRSS）的技术发展趋势及数据分发应用需求,分析了现有基于通用服务器的高速数据分发模式存在的问题及性能瓶颈,在此基础上提出了基于网络处理器的数据分发模式,并分析了其相比于服务器模式的优点。从硬件和软件两方面提出了基于专用网络芯片的高速数据分发设备的设计方案,给出三种高速数据分发方法,通过比较,选用最优方法。性能测试结果表明,基于专用网络处理器的数据分发模式相比于现有服务器数据分发模式性能提高200%.     

Performance analysis and stability testing of a new structure of optoelectronic integrated device

This paper is devoted to the evaluation of the transient performance as well as testing the stability of a new version of optoelectronic integrated devices. This version is composed of a resonant cavity enhanced heterojunction phototransistor and a light-emitting diode. It will be called as a resonant cavity enhanced optoelectronic integrated device. The evaluation of its transient response is based on the frequency response of the constituent elements and the optical feedback inside the device. Analytical expressions describing the transient behavior are derived. The numerical results show that the transient performance of the version under consideration strongly depends on the optical feedback inside the device and it has a very high optical gain in comparison with the conventional types. In addition, the possibility of operating the new device in two distinct modes is also available as similar to conventional types. Moreover, testing the stability of the new version demonstrates that its optical gain is stable as long as the value of the optical feedback is maintained below threshold value, while exhibits instability for values of optical feedback, which is greater or equal to this threshold value.     

InGaAsP/InP long wavelength optoelectronic integrated circuits (OEIC's) for high-speed optical fiber communication systems

This paper describes long wavelength InP-based OEIC's, in which optical components and electrical components are monolithically integrated on a single chip. Recent progress in the InP-based OEIC technologies is reviewed. Results obtained from transmission experiments using long wavelength OEIC's are described and applications for optical systems are discussed.     

The beginning of integrated optoelectronic circuits

The monolithic integration of electronic and optical functions on a single semiconductor crystal has become known as integrated optoelectronic circuits. These circuits usually contain a semiconductor laser and the associated driver electronics, detection and current amplication, or combine these two functions in an optical repeater. Monolithic integration leads to smaller circuits, greater ruggedness, and should result in lower cost.     

自适应光电混合互连分流结构建模与性能分析

针对片上光电混合互连网络(hybrid optoelect ronic network-on-chip,HONoC)拥 塞控制与自适应能力差、无法实现光电联合仿真等问题,提出一种适用于可重构阵列处理器 的自适应光电混合互连分流结构,在此结构上设计了自适应分流路由算法与一种低损耗无阻 塞的5端口光路由器,并搭建了基于System verilog与Verilog的光电混合互连功能仿真与 性能统计模型。实验结果表明,在边缘节点阻塞的情况下所设计的路由算法避免拥塞能力平 均提升了17.5%,光路由器所需交叉波导与微环谐振器数量大幅减少,平均光路由器级插入 损耗仅为0.522 dB,所设计的光电混合互连性能统计模型具有支持 设计拓扑、结构和路由策 略等功能,并且可以对资源使用、功耗开销、插入损耗等性能进行统计分析。     

基于OpenVPX的高速集成处理器USB接口设计

文章针对传统通用串行总线(USB)接口器件存在的数据传输速率低、无法满足USB接口数据的快速传输需求问题,展开高速集成处理器USB接口的设计研究。通过基于OpenVPX的高速集成数据处理、USB接口连接方式设计、USB接口寄存器初始化,实现USB接口的高速通信。通过实验证明,该USB接口与USB 3.0接口相比有效提高了对数据传输的速率,满足数据实时高速传输需要。     

Transient response of optoelectronic integrated bistable device

In this paper, the transient response of an optical bistable device with optically controlled set and reset functions is analyzed. The device is made from a vertical integration of two heterojunction phototransistors (HPTs) and a laser diode (LD). One of the HPTs (HPT-A) is integrated just above the active layer of the LD and is utilized in the set operation, while the other HPT (HPT-B) is used to achieve the reset operation. The effect of the various device parameters on the set and reset operations is outlined. Finally, expressions for the rise time during the setting, and fall time during the resetting conditions are derived