共查询到18条相似文献,搜索用时 241 毫秒
1.
2.
总剂量辐照下,存储单元和MOS管阈值电压均会发生漂移,引起灵敏放大器性能退化.基于0.6μm SOI工艺,设计了一种用于SONOS EEPROM存储器中的高速、辐照加固的新型灵敏放大器.该电路中采样反相器和参考支路采用电路补偿技术,以达到抗辐照效果.双支路预充技术用于提高读取速度.仿真结果表明灵敏放大器中采样反相器噪声容限,以及参考电流基本不受辐照引起的阈值电压漂移的影响.此外,辐照后新型灵敏放大器电路延迟时间仅为9.16ns,与传统单支路预充结构相比,延迟时间缩短27%. 相似文献
3.
CMOS/SOI64Kb静态随机存储器 总被引:5,自引:3,他引:2
对一种 CMOS/ SOI6 4Kb静态随机存储器进行了研究 ,其电路采用 8K× 8的并行结构体系 .为了提高电路的速度 ,采用地址转换监控 ( Address- Translate- Detector,ATD)、两级字线 ( Double- Word- L ine,DWL)和新型的两级灵敏放大等技术 ,电路存取时间仅 40 ns;同时 ,重点研究了 SOI静电泄放 ( Electrostatic- Discharge,ESD)保护电路和一种改进的灵敏放大器 ,设计出一套全新 ESD电路 ,其抗静电能力高达 42 0 0— 45 0 0 V.SOI6 4KbCMOS静态存储器采用 1.2 μm SOI CMOS抗辐照工艺技术 ,芯片尺寸为 7.8m m× 7.2 4mm 相似文献
4.
对一种CMOS/SOI 64Kb静态随机存储器进行了研究,其电路采用8K×8的并行结构体系.为了提高电路的速度,采用地址转换监控(Address-Translate-Detector,ATD)、两级字线(Double-Word-Line,DWL)和新型的两级灵敏放大等技术,电路存取时间仅40ns;同时,重点研究了SOI静电泄放(Electrostatic-Discharge,ESD)保护电路和一种改进的灵敏放大器,设计出一套全新ESD电路,其抗静电能力高达4200—4500V.SOI 64Kb CMOS静态存储器采用1.2μm SOI CMOS抗辐照工艺技术,芯片尺寸为7.8mm×7.24mm. 相似文献
5.
针对非制冷红外探测器片上存储器的高速数据读出,设计了一种用于非制冷红外探测器片上存储器的低延迟灵敏放大器。随着非制冷红外探测器像素阵列的不断加大,对非制冷红外探测器片上存储器的要求也更高,需要一个更高速的存储器进行红外探测器内部数据存储。通过降低灵敏放大器延迟时间是提高数据传输速度的一种可靠方法。本文对传统交叉耦合结构灵敏放大器进行改进,与传统交叉耦合结构灵敏放大器相比,增加了完全互补型的第二级交叉放大电路,并采用NMOS组成的中间阶段进行两级运放的耦合。改进后的新型灵敏放大器能快速有效地放大位线上电压差,同时改善灵敏度低的问题。本论文设计的灵敏放大器采用TSMC 65 nm工艺,在工作电压为5 V、位线电压差为100 mV条件下,仿真结果表明:数据读出延迟仅为25.19 ps,与交叉耦合式灵敏放大器相比,读出延迟降低了37.07%。同时,在全工艺角仿真条件下,环境温度为-45—125℃,新型灵敏放大器延迟仿真最大值仅为39 ps,最小值为17.1 ps。 相似文献
6.
7.
8.
传统SOI DTMOS器件固有的较大体电阻和体电容严重影响电路的速度特性,这也是阻碍SOI DTMOS器件应用于大规模集成电路的最主要原因之一.有人提出通过增大硅膜厚度的方法减小器件体电阻,但随之而来的寄生体电容的增大严重退化了器件特性.为了解决这个问题,提出了一种SOI DTMOS新结构,该器件可以分别优化结深和硅膜的厚度,从而获得较小的寄生电容和体电阻.同时,考虑到沟道宽度对体电阻的影响,将该结构进一步优化,形成侧向栅-体连接的器件结构.ISE-TCAD器件模拟结果表明,较之传统SOI DTMOS器件,该结构的本征延时和电路延时具有明显优势. 相似文献
9.
10.
11.
12.
Design issues and insights for low-voltage high-density SOI DRAM 总被引:3,自引:0,他引:3
Fossum J.G. Meng-Hsueh Chiang Houston T.W. 《Electron Devices, IEEE Transactions on》1998,45(5):1055-1062
A physics-based study of floating-body effects on the operation of SOI DRAM is described. The study, which is based on device and circuit simulations using a physical SOI MOSFET model calibrated to an actual partially-depleted (PD) SOI DRAM technology, addresses the performance of the peripheral circuitry, e.g., the sense amplifier, as well as the dynamic retention of the data storage cell. Design insight for low-voltage high-density SOI DRAM is attained. Double cell design is shown to yield a dynamic retention time long enough for gigabit memories, and crude body-source ties for nMOS, with pMOS bodies floating, are shown to effectively suppress instabilities in the sense amplifier 相似文献
13.
14.
M. L. Seaford D. H. Tomich K. G. Eyink L. Grazulis K. Mahalingham Z. Yang W. I. Wang 《Journal of Electronic Materials》2000,29(7):906-908
Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SOI was thinned to ~1000 Å. The five inch diameter SOI wafer was created by wafer bonding. The GaAs (004) x-ray diffraction (XRD) reflection showed a 25% reduction in the full width half maximum (FWHM) for GaAs on a compliant (511) SOI as compared to GaAs on a silicon substrate. Cross section transmission electron microscopy (XTEM) clearly indicates a different dislocation structure for the two substrates. The threading dislocation density is reduced by at least an order of magnitude in the compliant (511) SOI as compared to the (511) silicon. XTEM found dislocations and damage was generated in the top silicon layer of the compliant SOI substrate after GaAs growth. 相似文献
15.
16.
17.
The crystalline quality of wafer bonded (WB) silicon on insulator (SOI) structures thermal treated in dry oxygen ambients
has been investigated by means of transmission electron microscopy and defect etching. The main crystallographic defects present
in the SOI layers are dislocations, amorphous precipitates, and oxidation induced stacking faults (OISF). The evolution of
the OISFs with time and temperature has also been investigated. The main feature observed is that the OISF in WB SOI structures
undergo a retrogrowth process at temperatures around T = 1195°C for times of t = 2h. This result is very similar to that recently
reported for oxygen implanted SOI (SIMOX) but considerably different from that observed in bulk silicon. The experimental
data fits nicely a model recently proposed for the retrogrowth of OISF in thin SOI layers. This model considers that the self-interstitial
supersaturation is considerably reduced compared to bulk silicon due to the relative fast point defect recombination inside
the top silicon layer. 相似文献
18.
《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(10):1031-1035