Reliability and RF performance of BGA solder joints with plastic-core solder balls in LTCC/PWB assemblies

In this paper board-level reliability of low-temperature co-fired ceramic (LTCC) modules with thermo-mechanically enhanced ball-grid-array (BGA) solder joint structure mounted on a printed wiring board (PWB) was experimentally investigated by thermal cycling tests in the 0–100 °C and −40 to 125 °C temperature ranges. The enhanced joint structure comprised solder mask defined (SMD) AgPt pad metallization, eutectic solder and plastic-core solder balls (PCSB). Similar daisy-chained LTCC modules with non-collapsible 90Pb10Sn solder spheres were used for a reference test set. The reliability of the joint structures was analyzed by resistance measurements, X-ray microscopy, scanning acoustic microscopy (SAM) and SEM/EDS investigation. In addition, a full-wave electromagnetic analysis was performed to study effects of the plastic-core material on the RF performance of the LTCC/BGA package transition up to millimeter-wave frequencies. Thermal cycling results of the modules with PCSBs demonstrated excellent fatigue performance over that of the reference. In the harsher cycling test, Weibull’s shape factor β values of 7.9 and 4.8, and characteristic lifetime θ values of 1378 and 783 were attained for the modules with PCSBs and 90Pb10Sn solder spheres, respectively. The primary failure mode in all test assemblies was fatigue cracking in eutectic solder on the ceramic side.     

Effect of primary creep and plasticity in the modeling of thermal fatigue of SnPb and SnAgCu solder joints

It has been conventional to simplify the thermo-mechanical modeling of solder joints by omitting the primary (transient) contributions to total creep deformation, assuming that secondary (steady-state) creep strain is dominant and primary creep is negligible. The error associated with this assumption has been difficult to assess because it depends on the properties of the solder joint and the temperature–time profile. This paper examines the relative contributions of plasticity, primary and secondary creep in Sn40Pb and Sn3.8Ag0.7Cu solders using the analysis of a trilayer solder joint structure with finite elements and a newly developed finite difference technique. The influences of temperature amplitude and ramp rate have been quantified. It was found that for the thermal profiles considered, the role of plasticity was negligible for trilayer assemblies with SnPb and SnAgCu solder interlayers. Furthermore, when primary creep was included for SnAgCu, the temperature-dependent yield strength was not exceeded and no plastic strains resulted. Neglect of primary creep can result in errors in the predicted stress and strain of the solder joint. Damage metrics based on the stabilized stress vs. strain hysteresis loop, for symmetric 5 min upper/lower dwell periods, differ widely when primary creep is considered compared to the secondary-only creep model. Creep strain energy density differences between the secondary-only and primary plus secondary creep models for SnPb were 32% (95 °C/min–Δ165 °C thermal profile), 32% (95 °C/min–Δ100 °C) and 35% (14 °C/min–Δ100 °C); similarly for SnAgCu, the differences were 29% (95 °C/min–Δ165 °C), 46% (95 °C/min–Δ100 °C) and 58% (14 °C/min–Δ100 °C). Accumulated creep strain differences between the secondary-only and primary plus secondary creep models for SnPb were 21% (95 °C/min–Δ165 °C), 25% (95 °C/min–Δ100 °C) and 25% (14 °C/min–Δ100 °C); similarly for SnAgCu the differences were 82% (14 °C/min–Δ100 °C), 89% (95 °C/min–Δ100 °C) and 100% (95 °C/min–Δ165 °C). In turn, these discrepancies can lead to errors in the estimation of the solder thermal fatigue life due to the changing proportion of primary creep strain to total inelastic strain under different thermal profiles, particularly for SnAgCu.     

Electrically active defects induced by hydrogen and helium implantations in Ge

Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×10¹⁰–1×10¹⁴ cm⁻² are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50–350 °C have also been studied. The results have been obtained by means of capacitance–voltage (C–V) measurements and deep-level transient spectroscopy (DLTS).It was found from an analysis of DLTS spectra that low doses (<5×10¹⁰ cm⁻²) of H and He ion implantations resulted in the introduction of damage similar to that observed after MeV electron irradiation. The Sb–vacancy complex was the dominant deep-level defect in the lightly implanted samples. After implantations with doses higher than 5×10¹⁰ cm⁻² peaks due to more complex defects were observed in the DLTS spectra. Implantations with heavy (5×10¹³ cm⁻²) doses of both H and He ions caused the formation of a sub-surface layer with a high (up to 1×10¹⁷ cm⁻³) concentration of donors. These donors were eliminated by anneals at temperatures in the range 100–200 °C. Heat treatments of the heavy proton-implanted Ge samples in the temperature range 250–300 °C resulted in the formation of shallow hydrogen-related donors, the concentration of which was the highest in a region close to the projected depth of implanted protons. The maximum peak concentration of the H-related donors was higher than 1×10¹⁵ cm⁻³ for a proton implantation dose of 1×10¹⁴ cm⁻².     

Advanced electrical and stability characterization of untrimmed and variously trimmed thick-film and LTCC resistors

As-fired thick-film resistors have the resistance tolerance within ±20% and this tolerance is increased for smaller components. Therefore the novel trimming methods are necessary for microresistors, especially when they are embedded in LTCC substrate. This paper compares electrical (normalized temperature dependence of resistance, low frequency noise) and stability properties (relative resistance drift, changes of current noise index) of untrimmed, voltage pulse trimmed and laser trimmed unglazed thick-film resistors after step-increased long-term thermal ageing at 162 °C, 207 °C and 253 °C. Moreover the effect of long term exposure (1000 h, 125 °C) and thermal shocks (1000 shocks between −55 °C and 125 °C) is analysed for untrimmed and voltage pulse trimmed buried LTCC resistors.     

A quantitative method of reliability estimation for surface mount solder joints based on heating factor Qη

A novel method of reliability analysis on thermal fatigue failure for surface mount solder joints, based on the heating factor Q_η, is presented, by which quantitative reliability estimation and prediction of solder joints suffering from cyclic thermal stress can be done. Based on the typical lifetime data of thermal cycling test, the relationship of the mean time to failure (MTTF) as well as the reliability of solder joints as an explicit function of Q_η is deduced and presented in a unified mathematic form. Numerical calculations are performed, and the result shows that the MTTF decreases quickly with the increases in heating factor and then slowly approximates to a constant value when Q_η  1500 s °C. The solder joint reliability in terms of thermal cycle degrades in an analogical fashion for different heating factors. For any given thermal cycle, calculation suggests that to obtain a higher reliability, a lower heating factor should be controlled during soldering. The presented method gives an applicable solution and can be used for online reflow control in industry. On the one hand, an ideal reflow profile can be achieved by properly controlling heating factor during soldering to meet the given reliability goal. On the other hand, the life expectancy of solder joints can be approximately estimated and predicted from a known reflow profile with a specified heating factor. Finally, for a specified reliability goal, how to properly choose and control heating factor during soldering to achieve reliable solder joints is discussed.     

CCGA packages for space applications

Commercial-off-the-shelf (COTS) area array packaging technologies in high reliability versions are now being considered for applications, including use in a number of NASA electronic systems being utilized for both the Space Shuttle and Mars Rover missions. Indeed, recently a ceramic package version specifically tailored for high reliability applications was used to provide the processing power required for the Spirit and Opportunity Mars Rovers built by NASA-JPL. Both Rovers successfully completed their 3-months mission requirements and continued exploring the Martian surface for many more moths, providing amazing new information on previous environmental conditions of Mars and strong evidence that water exists on Mars.Understanding process, reliability, and quality assurance (QA) indicators for reliability are important for low risk insertion of these newly available packages in high reliability applications. In a previous investigation, thermal cycle test results for a non-functional daisy-chained peripheral ceramic column grid array (CCGA) and its plastic ball grid array (PBGA) version, both having 560 I/Os, were gathered and are presented here. Test results included environmental data for three different thermal cycle regimes (−55/125 °C, −55/100 °C, and −50/75 °C). Detailed information on these—especially failure type for assemblies with high and low solder volumes—are presented. The thermal cycle test procedure followed those recommended by IPC-9701 for tin–lead solder joint assemblies. Its revision A covers guideline thermal cycle requirements for Pb-free solder joints. Key points on this specification are also discussed.In a recent investigation a fully populated CCGA with 717 I/Os was considered for assembly reliability evaluation. The functional package is a field-programmable gate array that has much higher processing power than its previous version. This new package is smaller in dimension, has no interposer, and has a thinner column wrapped with copper for reliability improvement. This paper will also present thermal cycle test results for assemblies of this and its plastic package version with 728 I/Os, both of which were exposed to four different cycle regimes. Two of these cycle profiles are specified by IPC-9701A for tin–lead, namely, −55 to 100 °C and −55 to 125 °C. One is a cycle profile specified by Mil-Std-883, namely, −65/150 °C, generally used for ceramic hybrid packages screening and qualification. The last cycle is in the range of −120 to 85 °C, a representative of electronic systems directly exposed to the Martian environment without use in a thermal control enclosure. Per IPC-9701A, test vehicles were built using daisy chain packages and were continuously monitored and/or manually checked for opens at intervals. The effects of many process and assembly variables—including corner staking commonly used for improving resistance to mechanical loading such as drop and vibration loads—were also considered as part of the test matrix. Optical photomicrographs were taken at various thermal cycle intervals to document damage progress and behavior. Representative samples of these are presented along with cross-sectional photomicrographs at higher magnification taken by scanning electron microscopy (SEM) to determine crack propagation and failure analyses for packages.     

Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device

Thick Al wires bonded on chips of power semiconductor devices were examined for thermal cycle tests, then the bonded joints were cut using microtome method, after that those were observed by scanning electron microscope and analyzed by electron back scattered diffraction. Some cracks were observed between Al wires and the chips, unexpectedly the crack lengths were almost constant for −40/150 °C, −40/200 °C and −40/250 °C tests. It is considered that re-crystallization has been progressed during the high temperature side of the thermal cycle tests.Furthermore, joint samples were prepared using high temperature solders such as Zn–Al and Bi with CuAlMn, Direct Bonded Copper insulated substrates and Mo heatsinks. The fabricated samples were evaluated by scanning acoustic microscope before and after thermal cycle tests. Consequently, almost neither serious damages nor delaminations were observed for −40/200 °C and −40/250 °C tests.     

Temperature profile effects in accelerated thermal cycling of SnPb and Pb-free solder joints

Accelerated thermal cycling (ATC) has been widely used in the microelectronics industry for reliability assessment. ATC testing decreases life cycle test time by one or more of the following means: increasing the heating and cooling rate, decreasing the hold time, or increasing the range of the applied temperature. The relative effect of each of these cycle parameters and the failure mechanisms they induce has been the subject of many studies; however uncertainty remains, particularly regarding the role of the heating and cooling rate. In this research, three conditions with two ramp rates (14 °C/min and 95 °C/min) and two temperature ranges (ΔT = 0–100 °C and −40 to 125 °C) were applied to resistor 2512 and PBGA 256 test vehicles assembled with SnPb and Pb-free solders. The test results showed that the higher ramp rate reduced the testing time while retaining the same failure modes, and that the damage per cycle increased with the temperature difference. For the resistors, the Pb-free solder joints lasted longer than the SnPb joints at the smaller ΔT, but were inferior at the larger ΔT. In contrast, the Pb-free solder joints in the PBGA test vehicles lasted longer than the SnPb solder under both conditions.     

Thermally induced deformation of solder joints in real packages: Measurement and analysis

The paper presents a hybrid experimental and analytical approach to track the deformation of solder joints in an electronic package subject to a thermal process. The solder joint strain is directly measured using a computer vision technique. The strain measurement is analyzed following an approach that is devised based on an established solder constitutive relation. The analysis leads to the determination of the solder joint stress and in turn, to the separation of the elastic, plastic and creep strain from the measured total strain. The creep strain rate and stress–strain hysteresis loop are also obtained. Two case studies are presented to illustrate the applications and to show the viability of the approach. Each case involves a resistor package with SAC (Sn95.5Ag3.8Cu0.7) solder joints, which is subjected to a temperature variation between ambient and 120 °C. The results confirm that shear is a dominant strain component in such solder joints. The shear strain varies nearly in phase with the temperature whereas the shear stress exhibits a different trend of variation due to stress relaxation. The peak shear stress of around 10 MPa to 15 MPa are found, which occur at near 70 °C in both cases, when the temperature ramps up at approximately 3 °C/min. The creep shear strain goes up to 0.02 and accounts for over 80% of the total shear strain. The creep strain rate is in the order of magnitude of 10⁻⁵ s⁻¹. Responding to the temperature cycling with such moderate rate, the creep strain shows modest ratcheting while the stress–strain hysteresis stabilizes in two cycles.     

Effects of bonding temperature on the properties and reliabilities of anisotropic conductive films (ACFs) for flip chip on organic substrate application

The effects of bonding temperatures on the composite properties and reliability performances of anisotropic conductive films (ACFs) for flip chip on organic substrates assemblies were studied. As the bonding temperature decreased, the composite properties of ACF, such as water absorption, glass transition temperature (T_g), elastic modulus (E′) and coefficient of thermal expansion (α), were improved. These results were due to the difference in network structures of cured ACFs which were fully cured at different temperatures. From small angle X-ray scattering (SAXS) test result, ACFs cured at lower temperature, had denser network structures. The reliability performances of flip chip on organic substrate assemblies using ACFs were also investigated as a function of bonding temperatures. The results in thermal cycling test (−55 °C/+150 °C, 1000 cycles) and PCT (121 °C, 100% RH, 96 h) showed that the lower bonding temperature resulted in better reliability of the flip chip interconnects using ACFs. Therefore, the composite properties of cured ACF and reliability of flip chip on organic substrate assemblies using ACFs were strongly affected by the bonding temperature.     

New dielectric material system of Nd(Mg1/2Ti1/2)O3–CaTiO3 at microwave frequency

The microwave dielectric properties of (1 − x)CaTiO₃–xNd(Mg_1/2Ti_1/2)O₃ (0.1  x  1.0) ceramics prepared by the conventional solid state method have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 152 to 27 as x varies from 0.1 to 1.0. In the (1 − x)CaTiO₃–xNd(Mg_1/2Ti_1/2)O₃ system, the microwave dielectric properties can be effectively controlled by varying the x value. At 1400 °C, 0.1CaTiO₃–0.9Nd(Mg_1/2Ti_1/2)O₃ has a dielectric constant (ε_r) of 42, a Q × f value of 35 000 GHz and a temperature coefficient of resonant frequency (τ_f) of −10 ppm/°C. As the content of Nd(Mg_1/2Ti_1/2)O₃ increases, the highest Q × f value of 43 000 GHz for x = 0.9 is achieved at the sintering temperature 1500 °C.     

Electrical and stability properties and ultrasonic microscope characterisation of low temperature co-fired ceramics resistors

This paper presents systematic investigations of electrical and stability properties of various low temperature co-fired ceramics (LTCC) resistors. One of the goals of this work was to check the compatibility of LTCC materials (tapes, resistive and conductive inks) from various manufacturers. Three commercially available green tapes and three LTCC resistor/conductor systems were examined. The resistive inks with 1 kΩ/sq. nominal sheet resistance were used. Buried (inside) and surface resistors were laminated and fired according to the tape manufacturers’ recommendations. The influence of dimensional effect on sheet resistance and hot temperature coefficient of resistance, the temperature dependence of resistance in a wide temperature range (from −180°C to +130°C), long-term stability of thermally aged as-fired resistors (150°C, 500 h) and durability to high-voltage micro- or nanosecond pulses (50 ns pulses with 4000 V/mm maximum electric field or 10 μs ones with 700–1000 V/mm electrical field) were carried out for electrical and stability characterisation of LTCC resistors. Non-destructive scanning acoustic microscope diagnostics was applied for structure investigation and estimation of lamination and cofiring process quality of buried LTCC resistors.     

Failure Mechanisms of Thermomechanically Loaded SnAgCu/Plastic Core Solder Ball Composite Joints in Low-Temperature Co-Fired Ceramic/Printed Wiring Board Assemblies

The thermal fatigue endurance of completely lead-free 95.5Sn4Ag0.7Cu/plastic core solder ball (PCSB) composite joint structures in low-temperature Co-fired ceramic/printed wiring board (LTCC/PWB) assemblies was investigated using thermal cycling tests over the temperature ranges of −40°C–125°C and 0°C–100°C. Two separate creep/fatigue failures initiated and propagated in the joints during the tests: (1) a crack along the intermetallic compound (IMC)/solder interface on the LTCC side of the joint, which formed at the high-temperature extremes; and (2) a crack in the solder near the LTCC solder land, which formed at the low-temperature extremes. Moreover, localized recrystallization was detected at the outer edge of the joints that were tested in the harsh (−40°C–125°C) test conditions. The failure mechanism was creep/fatigue-induced mixed intergranular and transgranular cracking in the recrystallized zone, but it was dominated by transgranular thermal fatigue failure beyond the recrystallized zone. The change in the failure mechanism increased the rate of crack growth. When the lower temperature extreme was raised from −40°C to 0°C, no recrystallized zone was detected and the failure was due to intergranular cracks. (Received ...; accepted ...)     

Effects of process conditions on reliability, microstructure evolution and failure modes of SnAgCu solder joints

In this study, microstructure evolution at intermetallic interfaces in SnAgCu solder joints of an area array component was investigated at various stages of a thermal cycling test. Failure modes of solder joints were analyzed to determine the effects of process conditions on crack propagation. Lead-free printed-circuit-board (PCB) assemblies were carried out using different foot print designs on PCBs, solder paste deposition volume and reflow profiles. Lead-free SnAgCu plastic-ball-grid-array (PBGA) components were assembled onto PCBs using SnAgCu solder paste. The assembled boards were subjected to the thermal cycling test (−40 °C/+125 °C), and crack initiation and crack propagation during the test were studied. Microstructure analysis and measurements of interface intermetallic growth were conducted using samples after 0, 1000, 2000 and 3000 thermal cycles. Failures were not found before 5700 thermal cycles and the characteristic lives of all solder joints produced using different process and design parameters were more than 7200 thermal cycles, indicating robust solder joints produced with a wide process window. In addition, the intermetallic interfaces were found to have Sn–Ni–Cu. The solder joints consisted of two Ag–Sn compounds exhibiting unique structures of Sn-rich and Ag-rich compounds. A crystalline star-shaped structure of Sn–Ni–Cu–P was also observed in a solder joint. The intermetallic thicknesses were less than 3 μm. The intermetallics growth was about 10% after 3000 thermal cycles. However, these compounds did not affect the reliability of the solder joints. Furthermore, findings in this study were compared with those in previous studies, and the comparison proved the validity of this study.     

The effect of solder paste composition on the reliability of SnAgCu joints

As the electronics industry is moving towards lead-free manufacturing processes, more effort has been put into the reliability study of lead-free solder materials. Various tin–silver–copper-based solders have become widely accepted alternatives for tin–lead solders. In this study, we have tested three different SnAgCu solder compositions. The first consisted of a hypoeutectic 96.5Sn/3.0Ag/0.5Cu solder, the second of a eutectic 95.5Sn/3.8Ag/0.7Cu solder, and the third of a hypereutectic 95.5Sn/4.0Ag/0.5Cu solder. A eutectic SnPb solder was used as a reference. The test boards were temperature-cycled (−40 to +125 °C) until all samples failed. The results of the temperature cycling test were analyzed, and cross-section samples were made of the failed joints. Scanning electron and optical microscopy were employed to analyze the fracture behavior and microstructures of the solder joints. The reliability of lead-free solders and the effect of microstructures on joint reliability are discussed.     

Creep of thermally aged SnAgCu-solder joints

The creep behaviour of Sn96.5Ag3.5- and Sn95.5Ag3.8Cu0.7-solder was studied specifically for its dependence on technological and environmental factors. The technological factors considered were typical cooling rates and pad metallizations for solder joints in electronic packaging. The environmental factors included microstructural changes as a result of thermal aging of solder joints. Creep experiments were conducted on three types of specimens—flip–chip joints, PCB solder joints and bulk specimens. flip–chip specimens were altered through the selection of various under bump metallizations (Cu vs. NiAu), cooling rates (40 K/min vs. 120 K/min), and thermal storage (24 h, 168 h, and 1176 h at 125 °C). PCB solder joints were studied by using a copper pin soldered into a thru-hole connection on a printed circuit board having a NiAu metallization. Bulk specimens contained the pure alloys. The creep behaviour of the SnAg and SnAgCu solders varied in dependence of specimen type, pad metallization and aging condition. Constitutive models for SnAg and SnAgCu solders as they depend on the reviewed factors are provided.     

Investigation of strontium tantalate thin films for high-k gate dielectric applications

Strontium tantalate (STO) films were grown by liquid-delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt)₅(OC₂H₄OMe)]₂ as precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentration of the precursor. The growth rate varied from 4 to 300 nm/h and the highest rates were observed at the higher process temperature, pressure, and concentration of the precursor. The films were annealed at temperatures ranging from 600 to 1000 °C. Transmission electron microscopy (TEM), X-ray diffraction (XRD), and ellipsometry indicated that the as-deposited and the annealed films were uniform and amorphous and a thin (>2 nm) SiO₂ interlayer was found. Crystallization took place at temperatures of about 1000 °C. Annealing at moderate temperatures was found to improve the electrical characteristics despite different film thickness (effective dielectric constant up to 40, the leakage current up to 6×10⁻⁸ A/cm², and lowest midgap density value of 8×10¹⁰ eV⁻¹ cm⁻²) and did not change the uniformity of the STO films, while annealing at higher temperatures (1000 °C) created voids in the film and enhanced the SiO₂ interlayer thickness, which made the electrical properties worse. Thus, annealing temperatures of about 800 °C resulted in an optimum of the electrical properties of the STO films for gate dielectric applications.     

Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC

In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H–SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10⁻⁴–10⁻⁶ Ω cm², and the best SCR as low as 2.8 × 10⁻⁶ Ω cm² has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1–2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi₂ and TiSi) and Ti₃SiC₂ at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100–500 °C range for 20 h.     

Temperature stability of electro-thermally and piezoelectrically actuated silicon carbide MEMS resonators

The influence of temperature between 10 °C and 100 °C on the frequency shift of electro-thermally actuated silicon carbide (SiC) clamped–clamped beams and piezoelectrically actuated SiC cantilevers has been studied. For electro-thermally actuated beams, it has been found that the rate of change of frequency varies from around ±530 ppm/°C to around ±20 ppm/°C. The differential stress of the different materials has been found to play an important role in the temperature stability of the resonators. The shifts in frequency have been shown to decrease as the temperature increases above 40 °C, attributable to the converging coefficients of thermal expansion (TCEs) of Si and SiC, resulting in reduced stress at the anchors, confirmed by simulations. Platinum, rather than aluminium, has been found to be a superior material for use as actuation electrodes because the TCEs of platinum and SiC are better matched, and converge as the temperature increases, leading to less induced stress. A larger electrode area on top of the structure can result in the thermal stress being more evenly distributed, which can improve the temperature stability, as measured with devices with a larger area of Pt electrodes as well as piezoelectrically actuated cantilevers with the electrodes covering the entire length, rather than half the length, of the cantilevers.     

Properties of low temperature Sn–Ag–Bi–In solder systems

The metallurgical and mechanical properties of Sn–3.5 wt%Ag–0.5 wt%Bi–xwt%In (x = 0–16) alloys and of their joints during 85 °C/85% relative humidity (RH) exposure and heat cycle test (−40–125 °C) were evaluated by microstructure observation, high temperature X-ray diffraction analysis, shear and peeling tests. The exposure of Sn–Ag–Bi–In joints to 85 °C/85%RH for up to 1000 h promotes In–O formation along the free surfaces of the solder fillets. The 85°C/85%RH exposure, however, does not influence the joint strength for 1000 h. Comparing with Sn–Zn–Bi solders, Sn–Ag–Bi–In solders are much stable against moisture, i.e. even at 85 °C/85%RH. Sn–Ag–Bi–In alloys with middle In content show severe deformation under a heat cycles between −40 °C and 125 °C after 2500 cycles, due to the phase transformation from β-Sn to β-Sn + γ-InSn₄ or γ-InSn₄ at 125 °C. Even though such deformation, high joint strength can be maintained for 1000 heat cycles.