Faceting of High-Angle Grain Boundaries in Titanium-Excess BaTiO3

The grain boundaries in BaTiO₃ with excess Ti of 0.5, 0.3, and 0.1 at.% sintered at 1300° or 1250°C have been examined by scanning electron microscopy (SEM), electron backscattered diffraction pattern (EBSP), and transmission electron microscopy (TEM). In the 0.1% Ti-excess specimen, large grains growing abnormally form high-angle grain boundaries when they impinge on each other as verified by EBSP. A large fraction of these grain boundaries are faceted with hill-and-valley shapes. In the 0.5% Ti-excess specimen, large grains growing abnormally are elongated in the directions of their {111} double twins. These grains often form flat grain boundaries parallel to their {111} planes with the fine matrix grains, and the grain-boundary segments between the large impinging grains with high misorientation angles are often also parallel to the {111} planes of one of the grains. These grain boundaries are expected to be singular. Most of the grain boundaries between the randomly oriented fine-matrix grains in the 0.3 at.% Ti-excess specimen are also faceted with hill-and-valley shapes at finer scales when observed under TEM. The facet planes are parallel to {111}, {011}, and {012} planes of one of the grain pairs and are also expected to be singular. These high-angle grain boundaries lying on low index planes of one of the grain pairs are similar to those observed in other oxides and metals.     

Effect of Ba6Ti17O40/BaTiO3 Interface Structure on {111} Twin Formation and Abnormal Grain Growth in BaTiO3

A structural transition of Ba₆Ti₁₇O₄₀/BaTiO₃ interfaces from faceted to rough was induced by reducing oxygen partial pressure in the atmosphere. As the oxygen partial pressure decreased, the number densities of {111} twins and abnormal grain decreased. TEM observation showed that the twin formation was governed only by the faceting of the interface. Experimental evidence of {111} twin-assisted abnormal growth of faceted BaTiO₃ grains was also obtained.     

Grain Boundaries of Semiconducting SrTiO3 and BaTiO3 Ceramics Synthesized from Surface-Coated Powders

The chemical and electrical features of the grain boundaries in polycrystalline SrTi_0.99Nb_0.01O₃ (ST) and BaTiO₃ (BT) ceramics, which were synthesized by hot-press sintering Na- and Mn-coated semiconducting ST and BT powders, respectively, were investigated. Because of the excess negative electric charges formed near grain boundaries, electrostatic potential barriers were formed near the grain boundaries. The electrical features of the grain boundaries in ceramics are very sensitive to the amount of the coating material. When the amount of the coating material was increased from 0 to 5 wt%, the threshold voltage of the ST ceramics and the resistivity jump ratio of the BT ceramics increased from 0.7 to 81.0 V/cm and from 1.0 to 2.0 × 10³, respectively. The electrical features of the grain boundaries are related to their chemical characteristics.     

Abnormal Grain Growth Occurring at the Surface of a Sintered BaTiO3 Specimen

When a BaTiO₃ powder compact was sintered in air, the abnormal grain growth (AGG) was observed to occur at the surface of the specimen. The BaO evaporation from the surface and consequent formation of eutectic liquid is suggested to be the cause of AGG. When the evaporation of BaO during sintering was prevented by embedding the specimen in the same powder, no AGG was observed to occur.     

Effect of Sintering Atmosphere on Grain Boundary Segregation and Grain Growth in Niobium-Doped SrTiO3

To investigate the donor segregation in grain boundary regions and its effect on grain growth in SrTiO₃, SrTiO₃ powder compacts were doped with Nb₂O₅ and sintered in air or in hydrogen. The Nb-doped SrTiO₃ sintered in air did not show any detectable Nb segregation at the grain boundary region while an appreciable segregation was observed in the space-charge region of the sample sintered in H₂. The observed donor segregation in H₂ suggests a negative grain boundary charge and compensating positive space charge, which are the opposite to those in air. The negative grain boundary core was attributed to the segregation of inherently present acceptor impurities and the trapping of electrons at grain boundaries. In the H₂-sintered sample, where the added Nb ions were segregated in the space-charge region, the grain growth was suppressed. This result may indicate that the grain growth suppression in H₂ is due to the Nb solute drag of the boundary motion and the reduction in Ti vacancies.     

Hysteresis in the I–V Tunneling Characteristics of n-Type BaTiO3 Ceramics

Scanning tunneling microscopy (STM) and spectroscopy (STS) have been applied to study the surface electronic properties of n -type BaTiO₃ ceramics under ultrahigh vacuum and at various oxygen partial pressures. I – V tunneling characteristics of vacuum-annealed BaTiO₃ do not exhibit rectifying behavior, implying that the Fermi level is pinned at the surface. The surface band gap of BaTiO₃ annealed under vacuum at 540°C is equal to 1 eV. The top edge of the surface valence band is located 0.7 eV below the Fermi level. Hysteresis in the I – V characteristics has been observed at high oxygen partial pressures. Dosing of the BaTiO₃ with oxygen increases the surface band gap and unpins the Fermi level. As a result, the I – V characteristics acquire rectifying features similar to those observed for BaTiO₃ Schottky-type diodes. Hysteresis in the I – V spectra observed at high oxygen partial pressures is attributed to the changes of the surface potential barrier due to adsorption/desorption of oxygen modulated by the tip-sample potential difference.     

Growth of BaTiO3 Seed Grains by the Twin-Plane Reentrant Edge Mechanism

Two different types of BaTiO₃ seed particles, normal and twinned seeds of ∼30 μm on the average, were prepared from crushed sintered specimens. Normal seeds were obtained from the usual BaTiO₃ sintered compacts, while twinned seeds containing a double twin were obtained from BaTiO₃ compacts sintered with 2 mol% of SiO₂. The BaTiO₃ powder compacts were again prepared with 5 wt% of seed grains and sintered under various conditions. The microstructural evolution was quite different in the two cases: the growth of normal seed grains was ultimately limited but that of the twinned seeds continued extensively. The observed difference is discussed in terms of the growth mechanism and the atomic structure of interfaces.     

Microcontact Impedance Spectroscopy at Single Grain Boundaries in Fe-Doped SrTiO3 Polycrystals

Microcontacts on adjacent grains of polycrystalline Fe-doped SrTiO₃ samples have been used to locally investigate the properties of individual grain boundaries. Impedance spectroscopy was employed to separate bulk and grain boundary impedances. Experiments at about 30 different grain boundaries permit far-reaching conclusions on the distribution of grain boundary resistances, capacitances, and peak frequencies measured between adjacent grains. The rather narrow distribution of the grain boundary peak frequencies indicates a narrow distribution of grain boundary resistivities. All features (e.g., nonlinear current–voltage characteristics, grain boundary thickness, temperature dependence) are in accordance with the assumption of space charge depletion layers (double Schottky barriers) as the origin of the enhanced grain boundary resistivity. The average barrier height measured was about 630 mV. For comparison conventional (macroscopic) impedance measurements on a polycrystal were also performed and a brick layer model was used to extract effective properties. The reasonable agreement between these effective parameters and the average of the locally obtained parameters demonstrates that, in this case, a brick layer analysis of conventional impedance experiments yields satisfying estimates of the grain boundary properties.     

Base-Metal-Electroded BaTiO3 Capacitor Materials with Duplex Microstructures

The effect of dopants and processing conditions on the dielectric properties of base-metal-electroded materials was investigated. BaTiO₃ materials simultaneously doped with MgO and Y₂O₃ additives can achieve small capacitance variation (Δ C / C ), which meets the X7R specification, when the proportion of additives is abundant enough and the materials are not over-fired. Presumably, small Δ C / C values of thus obtained materials are the result of the formation of core–shell structure, which requires stringent control of material processing conditions. In contrast, X7R-type materials can be obtained in a much wider processing window, when prepared by mixing two BaTiO₃ materials of suitable dielectric constant–temperature ( K – T ) characteristics. Duplexed materials prepared from these two end-point BaTiO₃ materials with ratios ranging from 3:1 to 1:2 exhibit K – T behavior within the X7R specification, provided that one of the components possesses flat K – T behavior. Moreover, the dielectric properties of these materials were simulated using a simplified microstructural model. Simulation results indicate that the effective dielectric constant of core–shell materials, ( K _e)_CS, varies significantly not only with the dielectric properties of cores and shells, but also with the shell-to-core thickness ratio, whereas the effective dielectric constant of duplexed materials, ( K _e)_D, can be maintained at a very small Δ C / C value for a wide range of end-point constituent ratios, which agrees very well with the measured K – T properties for the materials.     

Distribution of Grain Boundaries in SrTiO3 as a Function of Five Macroscopic Parameters

Measurements of the grain boundary population as a function of misorientation and boundary plane orientation show that the distribution is inversely correlated to the sum of the energies of the surfaces comprising each boundary. The observed correlation suggests that the difference between the energy of a high-angle grain boundary and the two component surfaces is relatively constant as a function of misorientation. Two exceptions to this correlation were identified: low-misorientation-angle boundaries and the coherent twin boundary, where the (111) planes in the adjoining crystals are parallel to each other, but rotated by 60° around the [111] axis. In these cases, the high degree of coincidence across this interface probably lowers the boundary energy with respect to that of the component surfaces. For all other boundaries, the anisotropy of the population is accurately predicted by the surface energy anisotropy, and in general, boundaries display a preference for {100} orientations, the planes of minimum surface energy.     

Core-Shell Structures in ZrO2-Modified BaTiO3 Ceramic

Pure BaTiO₃ exhibits a paraelectric-to-ferroelectric phase transition at 130°C. When stoichiometric BaTiO₃ is combined with 10 mol% ZrO₂, the relative permittivity (ε) changes to a broad, relatively insignificant temperature dependence, and the Curie point, T _c , is not sharply defined. However, the transition sharpens at T = 95°C when these samples are sintered for a longer period of 60 h. SEM, EDAX analysis coupled with TEM observation gives three types of core-shell structures of different microstructural characteristics which are related to the diffuse phase transition. Chemical inhomogeneity, due to Zr⁴⁺ distribution in the core-shell structure, is proposed to account for the diffuse phase transition behavior.     

Effect of MgO Doping on the Phase Transformations of BaTiO3

The successive phase transformations in MgO-doped BaTiO₃ were studied. Upon MgO doping, dielectric anomalies corresponding to lower phase transformations were broadened and depressed, while an anomaly for a cubic–tetragonal transformation remained and shifted to a lower temperature. XRD peak splitting upon tetragonality of BaTiO₃ was decreased, and the peaks exhibited abnormally broadened profiles which are different from the one for cubic BaTiO₃ above T _c. Raman spectroscopy revealed the existence of orthorhombic phase at room temperature for the solid solution with 0.5 mol% or more MgO. The temperature dependence of the Raman spectrum showed that orthorhombic and rhombohedral phases in MgO-doped BaTiO₃ were stabilized at higher temperatures than pure BaTiO₃.     

Electrical Properties of Cerium-Doped BaTiO3

The high-temperature equilibrium electrical conductivity of Ce-doped BaTiO₃ was studied in terms of oxygen partial pressure, P (O₂), and composition. In (Ba_1−xCe _x )TiO₃, the conductivity follows the −1/4 power dependence of P (O₂) at high oxygen activities, which supports the view that metal vacancies are created for the compensation of Ce donors, and is nearly independent of P (O₂) where electron compensation prevails at low P (O₂). When Ce is substituted for the normal Ti sites, there is no significant change in conductivity behavior compared with undoped BaTiO₃, indicating the substitution of Ce as Ce⁴⁺ for Ti⁴⁺ in Ba(Ti_1−yCe _y )O₃. The Curie temperature ( T _c) was systematically lowered when Ce³⁺ was incorporated into Ba²⁺ sites, whereas the substitution of Ce⁴⁺ for Ti⁴⁺ sites resulted in no change in this parameter.     

Investigation of Lamella-Twinned Crystallites and Dislocations in Paraelectric Phases of Bi2O3-Doped BaTiO3

Defects in the paraelectric phases of BaTiO₃ doped with Bi₂O₃ were analyzed by transmission electron microscopy under two-beam conditions. (111) twin structures were characterized by selected area diffraction and bright-field images. The orientation relationships of the (111) twins were determined using stereograms. Lamella-twinned crystallites included in the paraelectric phases were found in this system. Pure wedge fringes were analyzed in these grains using electron diffraction and imaging techniques. Double diffraction was observed in the overlapped regions of the matrix and the microtwin in the [113] direction, and high-density dislocation loops were seen in some grains. Weak-beam dark-field microscopy techniques were used to observe the dislocation loops, which predominately lay on {100} crystal planes with Burgers vectors a 〈100〉, and were found to be pure edge dislocations. Some dislocations were transformed into crystallographic shear planes.     

Incorporation of Er3+ into BaTiO3

The incorporation of Er³⁺ into BaTiO₃ ceramics was investigated on samples containing 0.25, 0.5, 1, 2, 8, and 10 at.% of dopant, after sintering at 1350–1550°C in air. For Er³⁺ concentrations ≤1 at.%, dense and large-grained ceramics with low room-temperature resistivity (10²–10³Ω·cm) were obtained. The observed properties are largely independent of stoichiometry. Simultaneous substitution of Er³⁺ at both cation sites, with higher preference for the Ba site, is proposed. The behavior of heavily doped ceramics depends on stoichiometry. When Ba/Ti < 1, the electrical properties change from slightly semiconducting to insulating as Er concentration increases from 2 to 8 at.%. The ceramics have tetragonal perovskite structure and contain a large amount of Er₂Ti₂O₇ pyrochlore phase. On the other hand, when Ba/Ti > 1, the ceramics are insulating, fine-grained, and single phase. In this case, incorporation of Er³⁺ predominantly occurs at the Ti site, with oxygen vacancy compensation. Incorporation is accompanied by a significant reduction of tetragonality and by expansion of the unit cell. The different results indicate that Er³⁺ solubility at the Ba site does not exceed 1 at.%, whereas solubility at the Ti site is at least 10 at.%. However, the incorporation of Er³⁺ and the resulting properties are also strongly affected by sintering conditions.     

Dislocation Loop Formation in Nonstoichiometric (Ba,Ca)TiO3 and BaTiO3 Ceramics

Dislocation loops observed in nonstoichiometric and stoichiometric (Ba,Ca)TiO₃, and in stoichiometric BaTiO₃ sintered in a reducing atmosphere, were characterized by conventional transmission electron microscopy (TEM) under two-beam conditions and high-resolution TEM atomic structure analysis. Dislocation loops mostly lay on {100} planes with Burgers vectors of type 〈100〉. The dynamic behavior of these dislocation loops during the electron beam irradiation (EBI), however, was classified into two different types of dislocation loops: in A-site-excess (Ba,Ca)TiO₃, contrasts of dislocation loops faded completely away; in BaTiO₃ and B-site-excess (Ba,Ca)TiO₃, fine-line contrasts remained. Dislocation loops with Burgers vectors of type 1/2〈100〉 and the resultant crystallographic shear (CS) structure with a displacement vector of type 1/2〈110〉 after EBI were proposed to interpret residual line images. Disappearance of these line images in A-site-excess (Ba,Ca)TiO₃ strongly suggests preferential Ca ion site occupancy at the CS structure.     

Solubility of Silver and Palladium in BaTiO3

Silver, palladium, and their alloys are frequently used as electrode materials for BaTiO₃ (BT) based dielectrics. However, the electrodes and dielectrics usually are cofired at high temperatures, and silver and palladium can dissolve into the BT during cofiring. In the present study, the solubility of silver and palladium into BT after cofiring was determined. Three measurement techniques were used to determine solubility: chemical analysis, structural analysis, and dielectric analysis. The solubility of the silver in the BT was low, 450 ppm, after cofiring at 1290°C for 2 h in air. The diffusion distance of the silver ions into the BT was >5 μm. The solubility of the palladium in the BT was even lower, 50 ppm at 1290°C, and the diffusion distance was ∼1 μm. The solubility of both the silver and the palladium in the BT decreased as the oxygen partial pressure of the sintering atmosphere decreased. These results demonstrated that both silver and palladium solutes act as acceptors for BT.     

Effect of Crystal-Axis Orientation on Resonance Mode of BaTiO3 Ceramics

BaTiO₃ ceramics were fabricated by sintering a mixture of fibrous and commercial powders, and the effects of crystal-axis orientation on the resonance characteristics of the poled specimens was investigated. Resonance in the radial direction was observed only for the fibrous BaTiO₃ ceramic disk. The degree of c -axis orientation of the sintered compact decreased with an increase in the initial amount of the commercial powder, and the decrease in the degree of orientation caused the appearance of the resonance in the thickness direction.     

π-Rotation Faults in Hexagonal BaTiO3

Planar defects in the metastably retained h-BaTiO₃ exhibiting α-fringe pattern have been characterized via transmission electron microscopy (TEM). The eligible fault vectors were determined by adopting the invisibility criteria of 2πg·R = 0 or 2 n π augmented by high-resolution imaging. Three stacking faults, F₁, F₂, and F₃, of the extrinsic nature have been fully analyzed. The eligible fault vectors for faults F₁ and F₃ contained a basal component respectively of ⅓[0001] and ⅙[0001] and a common prismatic component of ⅓〈10[1-macr]0〉. However, only three of the 〈10[1-macr]0〉 vectors are the eligible prismatic component for the fault vectors R_F1=⅓[0[1-macr]11], ⅓[10[1-macr]1], and ⅓[[1-macr]101], and R_F3=⅙[02[2-macr]1], ⅙[2[2-macr]01], and ⅙[[2-macr]021] that have fulfilled the invisibility criteria. On the other hand, all fault vectors R_F21=⅙〈[4-macr]223〉 for fault F₂, containing six vectors of the 〈[2-macr]110〉 family, is eligible. Unlike the faults of πR_F=⅙〈[2-macr]203〉 found in the D0₁₉ intermetallics of Ni₃Sn and Co₃W, neither fault F₁ nor F₃ is the π-rotation type. Fault F₂, however, is a π-rotation fault since a 60°-rotation clockwise about [0001] has produced another eligible fault vector.     

Preparation of 0.95Bi1/2Na1/2TiO3·0.05BaTiO3 Ceramics by an Aqueous Citrate-Gel Route

This report details development of a route to solution-derived (1− x )Bi_1/2Na_1/2TiO₃· x BaTiO₃ powders. The method developed was the citrate-gel method—an evaporative, aqueous technique. When applied to 0.95Bi_1/2Na_1/2TiO₃·0.05BaTiO₃ (BNBT-5), the method produced perovskite phase powders that readily densified in the temperature range of 1000°C. The grain size of the sintered materials was on the order of 1 μm, and the weak-field dielectric properties at 1 MHz were similar to those reported for conventionally prepared materials sintered at higher temperatures (e.g., 1200°C).