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使用MBE技术低温生长了含有3个Siδ掺杂层的GaAs外延片,形成三量子阱结构。在4.2~300K温区0.1T的电磁铁上测量了样品载流子浓度和迁移率随温度的变化。在0.3~4.2K(^3He温区)和0~7T强磁场下测量了样品的横向磁阻、纵向磁阻和霍尔电阻。观察到了横向磁阻的SdH振荡和纵向磁阻的抗磁SdH振荡。根据实验结果着重讨论了纵向磁阻振荡的起源以及霍尔振荡的含义,简单分析了δ掺杂二维电子气中 相似文献
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用GSMBE技术在国内首次研究了应变Si1-x Gex/Si异质结材料的生长,并用X射线双晶线双晶衍射技术对样品进行了测试分析,对于Si0.91Ge0.09和Si0.86Ge0.14单层,其半宽度FWHM分别为100〃和202〃,对于Si0.89Ge0.11/Si多量子阱,其卫星峰多达15个以上,三种样品中的GeSi外延层干涉条纹清晰可见,结果表明,用GSMBE技术生长的Si-xGex/Si异质结 相似文献
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在Si(100)衬底上用离子束溅射方法淀积Ni,Co,Ti薄膜,形成Co/Ni/Si,Ni/Co/Si和Co/Ni/Si等结构,通过氮气中快速热退火反应生成三元硅化物(CoxNil-x)Si2。用AES,XRD,RBS沟道谱,SEM及四探针等方法对(CoxNil-x)Si2薄膜的物理特性和电学特性进行了测试,在Si衬底上Co,Ni多层膜经快速热退火可形成高电导的(CoxNil-x)Si2薄膜,其电阻率在15~20μΩ·cm之间。Co/Ni/Ti/Si(100)多层结构固相反应可以得到外延(CoxNil-x)Si2薄膜。(CoxNil-x)Si2的晶格为CaF2立方结构,晶格常数介于CoSi2和NiSi2之间。通过热处理和选择腐蚀等工艺,可在有CMOS图形的衬底上形成自对准的三元硅化物源漏接触和栅极互连图形。 相似文献
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计算了应变Si1-xGex层的本征载流子浓度及导带和价带有效态密度。用解析方法研究了它们与Ge组分x和温度T的依赖关系。发现随Ge组分x的增加,导带和价带有效态密度随之快速减小,而本征载流于浓度却随之而近乎指数式地增加。而且,温度T越低,导带和价带有效态密度随Ge组分x的增加而减小得越快,而本征载流于浓度上升得越快。同时还发现,具有大Ge组分x的应变Si1-xGex层,其用Si相应参数归一化的导带和价带有效态密度及它们的积对温度T的依赖关系弱,而具有小Ge组分x的应变Si1-xGex层,上述归一化参数对温度T的依赖关系强,这和目前仅有的文献[8]中,它们与温度依赖关系的定性研究结果相一致。 相似文献
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GaAs,AlxGa1—xAs外延层少子扩散长度及霍耳迁移率的无接触测试 总被引:1,自引:0,他引:1
用微波介质波导法无接触测试了生长在半绝缘衬底上的GaAs、AlxGa1-xAs外延层的微波光是导谱和横向磁阻,给出了从微波光电导谱计算了少子扩散长度和从横向磁阻计算霍耳迁移率的方法,并且由此算得外延层的少子扩散长度和霍耳迁移度,本方法对波测样品的几何形状和尺寸无特殊要求,测试区域小于5×5mm^2,具有无损伤,不污染的优点,并配有微机控制,测试迅速方便。 相似文献
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用微波介质波导法无接触测试了生长在半绝缘衬底上的GaAs、AlxGa1-xAs外延层的微波光电导谱和横向磁阻,给出了从微波光电导谱计算少子扩散长度和从横向磁阻计算霍耳迁移率的方法,并且由此算得外延层的少于扩散长度和霍耳迁移率.本方法对被测样品的几何形状和尺寸无特殊要求,测试区域小于5×5mm2,具有无损伤、不污染的优点,并配有微机控制,测试迅速方便. 相似文献
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计算了应变Si1-xGe层的本征载流子浓度及导带和价带有效态密度。用解析方法研究了它们与Ge组分x和温度T的依赖关系。发现随Ge组分x的增加,导带和价带有效态密度随之快速减小,而本征载流子浓度却随之而近乎指数式地增加。而且,温度T越低,导带和价带有效态密度随Ge组分x的增加而减小得越快,而本征载流子浓度上升得越快。同时还发现,具有大Ge组分x的应变Si-xGex层,其用Si相应参数归一化的导带和价 相似文献
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Annealing Behavior of Si1-xGex/Si Heterostructures 总被引:4,自引:1,他引:3
There are two reasonsfor people studying on the materialsannealing.Firstly,deviceswith semiconductor heterostructure may unavoidably experience some high-temperatureprocesses during both fabrication and operation.The thermal stability... 相似文献
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Tsung-Hsi Yang Guangli Luo Chang E.Y. Tsung-Yeh Yang Hua-Chou Tseng Chun-Yen Chang 《Electron Device Letters, IEEE》2003,24(9):544-546
The properties of nickel silicide formed by depositing nickel on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer are compared with that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer formed by depositing Ni directly on p/sup +/-Si/sub 1-x/Ge/sub x/ layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer. In addition, small junction leakage current is also observed for nickel silicide on a Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si diode. In summary, with a Si consuming layer on top of the Si/sub 1-x/Ge/sub x/, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on the Si/sub 1-x/Ge/sub x/ layer. 相似文献
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D. Y. C. Lie A. Vantomme F. Eisen T. Vreeland M. -A. Nicolet T. K. Carns K. L. Wang B. Holländer 《Journal of Electronic Materials》1994,23(4):369-373
We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed
GexSi1−x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1−x layers of similar x for irradiation doses up to 2.5 × 1014 Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However,
the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.
On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium. 相似文献
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A growth parameter study was made to determine the proper of a SiGe superlattice-type configuration grown on Si substrates
by chemical vapor deposition (CVD). The study included such variables as growth temperature, layer composition, layer thickness,
total film thickness, doping concentrations, and film orientation. Si and SiGe layers were grown using SiH4 as the Si source and GeH4 as the Ge source. When intentional doping was desired, diluted diborane for p-type films and phosphine for n-type films were
used. The study led to films grown at ∼1000°C with mobilities from ∼20 to 40 percent higher than that of epitaxial Si layers
and ∼100 percent higher than that of epitaxial SiGe layers grown on (100) Si in the same deposition system for net carrier
concentrations of ∼8x1015 cm-3 to ∼2x1017 cm-3. Enhanced mobilities were found in multilayer (100)-oriented Si/Si1-xGex films for layer thicknesses ≥400A, for film thicknesses >2μm, and for layers with x = 0.15. No enhanced mobility was found
for (111)-oriented films and for B-doped multilayered (100)-orlented films.
Supported in part by NASA-Langley Research Center, Hampton, VA, Contract NAS1-16102 (R. Stermer & A. Fripp, Contr. Mon.) 相似文献
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研究了p型Si1-xGex应变层中补偿浅能级杂质(P、As、Sb)的低温陷阱效应。研究发现,1)三种补偿浅能杂质P、As、Sb相比较,Sb的陷阱效应最小,As的最大;2)Ge组份x越大,低温陷阱效应越小;3)补偿浅能级杂质浓度ND越大,低温陷阱效应越显著,温度越低,陷阱作用越明显。 相似文献
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UHV/CVD生长SiGe/Si异质结构材料 总被引:11,自引:5,他引:6
以 Si2 H6 和 Ge H4 作为源气体 ,用 UHV/CVD方法在 Si( 1 0 0 )衬底上生长了 Si1- x Gex 合金材料和 Si1- x Gex/Si多量子阱结构 .用原子力显微镜、X光双晶衍射和透射电子显微镜对样品的表面形貌、均匀性、晶格质量、界面质量等进行了研究 .结果表明样品的表面平整光滑 ,平均粗糙度为 1 .2 nm;整个外延片各处的晶体质量都比较好 ,各处生长速率平均偏差为 3.31 % ,合金组分 x值的平均偏差为 2 .0 1 % ;Si1- x Gex/Si多量子阱材料的 X光双晶衍射曲线中不仅存在多级卫星峰 ,而且在卫星峰之间观察到了 Pendellosung条纹 ,表明晶格质量和界面质量都很好 ;Si 相似文献
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对1.55μm波长的Si1-xGex光波导开关和Si1-xGex/Si红外探测器的集成结构进行了系统的理论分析和优化设计。设计结果为:(1)对Si1-xGex光开关,Ge含量x=0.05,波导的内脊高、脊宽和腐蚀深度分别为3,8.5和2.6μm,分支角为5~6°。要实现对1.55μm波长光的开关作用,pn+结上所需加的正向偏压值应为0.97V;(2)对Si1-xGex/Si探测器,Ge含量x=0.5,探测器由23个周期的6nmSi0.5Ge0.5和17nmSi交替组成厚度为550nm,长度约为1.5~2mm的超晶格,内量子效率达80%以上。 相似文献
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研究了Si在AlxGa1-xAs(0≤x≤1)中的掺杂行为.为比较Al組份对Si掺杂浓度的影响,在用气态源分子束外延生长(GSMBE)掺Si n型AlxGa1-xAs(0≤x≤1)的所有样品时,n型掺杂剂Si炉的温度恒定不变.用Hall效应测量外延层的自由载流子浓度和迁移率,用X射线双晶衍射迴摆曲线测量外延层的组份.测试结果表明,当AlxGa1-xAs中Al组份从0增至0.38时,Si的掺杂浓度从4×1018cm-3降至7.8×1016cm-3,电子迁移率从1900 cm2/Vs降至100 cm2/Vs.这与AlxGa1-xAs材料的Γ-X直接—间接带隙的转换点十分吻合.在AlxGa1-xAs全组份范囲内,自由载流子浓度隨Al组份从0至1呈“V”形变化,在X=0.38处呈最低点.在x>0.4之后,AlxGa1-xAs的电子迁移随Al组分的增加,一直维持较低值且波动幅度很小. 相似文献
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R. Qian B. Anthony T. Hsu J. Irby D. Kinosky S. Banerjee A. Tasch 《Journal of Electronic Materials》1992,21(4):395-399
In this work, remote plasma-enhanced chemical vapor deposition (RPCVD) has been used to grow Ge
x
Si1−x
/Si layers on Si(100) substrates at 450° C. The RPCVD technique, unlike conventional plasma CVD, uses an Ar (or He) plasma
remote from the substrate to indirectly excite the reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions. In situ reflection high energy electron diffraction, selected area diffraction,
and plan-view and cross-sectional transmission electron microscopy (XTEM) were used to confirm the single crystallinity of
these heterostructures, and secondary ion mass spectroscopy was used to verify abrupt transitions in the Ge profile. XTEM
shows very uniform layer thicknesses in the quantum well structures, suggesting a Frank/ van der Merwe 2-D growth mechanism.
The layers were found to be devoid of extended crystal defects such as misfit dislocations, dislocation loops, and stacking
faults, within the TEM detection limits (∼105 dislocations/cm2). Ge
x
Si1−x
/Si epitaxial films with various Ge mole fractions were grown, where the Ge contentx is linearly dependent on the GeH4 partial pressure in the gas phase for at leastx = 0 − 0.3. The incorporation rate of Ge from the gas phase was observed to be slightly higher than that of Si (1.3:1). 相似文献