Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Al0.5Ga0.5)O3 Lead‐Free Piezoceramics

A new lead‐free BNT‐based piezoelectric ceramics of (1 ? x)Bi_0.5Na_0.5TiO₃–xBi(Al_0.5Ga_0.5)O₃ (x = 0, 0.02, 0.03, 0.04, and 0.05) were synthesized using a conventional ceramic fabrication method. Their structures and electrical properties were investigated. All the samples show a typical ferroelectric P(E) loops and S(E) curves at room temperature. The optimal properties are obtained at the composition of the x = 0.03. The substitution of Bi(Al_0.5Ga_0.5)O₃ enhances piezoelectric constant and increases Curie temperature from 58 pC/N and 310°C of pure BNT to 93 pC/N and 325°C of the x = 0.03. The temperature‐dependent P(E) loops and S(E) curves of 0.97BNT–0.03BAG indicate that phase transition from ferroelectric to antiferroelectric takes place over a very wide temperature region from 80°C to 180°C. The results show that the introduction of BAG improves the electrical properties of BNT.     

Defect Structure of Doped Lead‐Free 0.9(Bi0.5Na0.5)TiO3−0.1(Bi0.5K0.5)TiO3 Piezoceramics

Cu‐ and V‐doped BNKT10‐based piezoelectric ceramics with up to 0.5 at.% dopant concentration were synthesized and displayed more homogeneous grain growth compared to undoped BNKT10 ceramics. The defect chemistry and defect structure, studied by X‐ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR), indicate a slightly rhombic electronic environment with major unidirectional octahedral distortion of the local environment of Cu. The solubility limit of Cu²⁺ in this material system is lower than 0.05 at.% Cu; above this limit, a Cu segregation at the grain boundaries is prevalent, unlike in PZT and KNN. Here, V was shown to be incorporated into the perovskite lattice and possess oxidation states of +4 and +5, acting both as isovalent and donor dopant, predominantly compensated by A‐site vacancies. A trend toward higher ceramic densities, higher maximum polarization, and higher remanent polarization with increasing Cu concentration was observed. A maximum mechanical coupling factor could be obtained in the case of doping with 0.4 at.% V and 0.1 at.% Cu with a planar coupling of 0.19 and a thickness coupling factor of 0.56.     

Large Electromechanical Strain in Lead‐Free Binary System K0.5Bi0.5TiO3‐Bi(Mg0.5Ti0.5)O3

Solid solution formation in the lead‐free binary system (1?x)K_0.5Bi_0.5TiO₃?xBi(Mg_0.5Ti_0.5)O₃ has been studied for compositions x ≤ 0.12. X‐ray powder diffraction shows single‐phase perovskite for x < 0.1, and a mixed phase region between tetragonal and pseudocubic phases for compositions 0.04 ≤ x ≤ 0.06. Large electromechanical strains of ~0.3% at fields of 50 kV/cm are recorded in the mixed phase region, with d₃₃* (S_max/E_max) values of ~600 pm/V. The materials sustain polarization at low electric fields with remnant polarization ~18 μC/cm² and coercive field ~20 kV/cm for x = 0.06. Relative permittivity‐temperature plots display relaxor characteristics, with peak temperature ~340°C.     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

Microstructure and Electrical Properties of Nonstoichiometric 0.94(Na0.5Bi0.5+x)TiO3–0.06BaTiO3 Lead‐Free Ceramics

0.94(Na_0.5Bi_0.5+x)TiO₃–0.06BaTiO₃ (x = ?0.04, 0, 0.02; named NB_0.46T‐6BT, NB_0.50T‐6BT, NB_0.52T‐6BT, respectively) lead‐free piezoelectric ceramics were prepared via the solid‐state reaction method. Effects of Bi³⁺ nonstoichiometry on microstructure, dielectric, ferroelectric, and piezoelectric properties were studied. All ceramics show typical X‐ray diffraction peaks of ABO₃ perovskite structure. The lattice parameters increase with the increase in the Bi³⁺ content. The electron probe microanalysis demonstrates that the excess Bi₂O₃ in the starting composition can compensate the Bi₂O₃ loss induced during sample processing. The size and shape of grains are closely related to the Bi³⁺ content. For the unpoled NB_0.50T‐6BT and NB_0.52T‐6BT, there are two dielectric anomalies in the dielectric constant–temperature curves. The unpoled NB_0.46T‐6BT shows one dielectric anomaly accompanied by high dielectric constant and dielectric loss at low frequencies. After poling, a new dielectric anomaly appears around depolarization temperature (T_d) for all ceramics and the T_d values increase with the Bi³⁺ amount decreasing from excess to deficiency. The diffuse phase transition character was studied via the Curie–Weiss law and modified Curie–Weiss law. The activation energy values obtained via the impedance analysis are 0.69, 1.05, and 1.16 eV for NB_0.46T‐6BT, NB_0.50T‐6BT and NB_0.52T‐6BT, respectively, implying the change in oxygen vacancy concentration in the ceramics. The piezoelectric constant, polarization, and coercive field of the ceramics change with the variation in the Bi³⁺ content. The Rayleigh analysis suggests that the change in electrical properties of the ceramics with the variation in the Bi³⁺ amount is related to the effect of oxygen vacancies.     

Dielectric Relaxor Evolution and Frequency‐Insensitive Giant Strains in (Bi0.5Na0.5)TiO3‐Modified Bi(Mg0.5Ti0.5)O3–PbTiO3 Ferroelectric Ceramics

The 0.45Bi(Mg_0.5Ti_0.5)O₃–(0.55 ? x)PbTiO₃–x(Bi_0.5Na_0.5)TiO₃ (BMT–PT–xBNT) ternary solid solution ceramics were prepared via a conventional solid‐state reaction method; the evolution of dielectric relaxor behavior and the electrostrain features were investigated. The XRD and dielectric measurements showed that all studied compositions own a single pseudocubic perovskite structure and undergo a diffuse‐to‐relaxor phase transition owing to the evolution of the domain from a frozen state to a dynamic state. The formation of the above dielectric relaxor behavior was further confirmed by a couple of measurements such as polarization loops, polarization current density curves, as well as bipolar strain loops. A large strain value of ~0.41% at a driving field of 7 kV/mm (normalized strain d₃₃* of ~590 pm/V) was obtained at room temperature for the composition with x = 0.32, which is located near the boundary between ergodic and nonergodic relaxor. Moreover, this electric field‐induced large strain was found to own a frequency‐insensitive characteristic.     

Lead‐Free (Ba0.70Sr0.30)TiO3‐Modified Bi0.5(Na0.80K0.20)0.5TiO3 Ceramics with Large Electric Field–Induced Strains

The dielectric, ferroelectric, and electric field–induced strain behavior of Bi_0.5(Na_0.80K_0.20)_0.5TiO₃ (BNKT) ceramics modified with (Ba_0.70Sr_0.30)O₃ (BST) were investigated as a function of composition and temperature. The ceramic samples were synthesized by a solid‐state mixed oxide method and sintered at 1125°C for 2 h. The XRD and Raman spectra showed coexisting rhombohedral and tetragonal phases throughout the entire compositional range with the tetragonal phase becoming dominant at higher BST concentrations. For all compositions, the temperature dependence of the dielectric spectra revealed a frequency dependence that is characteristic of a relaxor mechanism. This suggests that these ceramics lacked long‐range order and it appears that the maximum disorder was observed for the composition with 5 mol% BST (BNKT–0.05BST sample). This was evidenced by the observation of pinched hysteresis loops, even at room temperature, and a significant decrease in the P_r and E_c values which resulted in large electric field–induced strains (S_max) of 0.40% and a normalized strain coefficient ( = S_max/E_max) of 732 pm/V. This significant strain enhancement at the composition of x = 0.05 may be attributed to both a composition‐induced structural phase transition and a field‐induced relaxor to ferroelectric phase transition.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na0.5Bi0.5)TiO3–xBiAlO3 Lead‐Free Piezoelectric Thin Films

Lead‐free sodium bismuth titanate–aluminate bismuth [0.97(Na_0.5Bi_0.5)TiO₃–0.03BiAlO₃] solid‐solution films deposited on (100) Pt/TiO₂/SiO₂/Si substrates by a sol–gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P_r of 38 μC/cm² and a leakage current density of 10^?7–10^?6 A/cm² (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT‐BA films a viable lead‐free alternative to the lead‐based materials in such as biosensors and ultrasonic transducers.     

The Relationship Between Phase Structure and Electrical Properties in (1 − x)(Bi0.5Na0.5TiO3–Ba0.5K0.5TiO3–BaTiO3)‐ xK0.5Na0.5NbO3 Quaternary Lead‐Free Piezoelectric Ceramics

(1 ? x)(0.85Bi_0.5Na_0.5TiO₃–0.11Ba_0.5K_0.5TiO₃–0.04BaTiO₃)‐ xK_0.5Na_0.5NbO₃ lead‐free piezoelectric ceramics with x = 0.00, 0.02, 0.03, 0.04, 0.05, and 0.10 were prepared by a conventional solid state method. A coexistence of rhombohedral (R) and tetragonal (T) phases was found in the system, which tended to evolve into pseudocubic symmetry when x increases. The x = 0.04 sample exhibited improved electrical properties: the dielectric constant ε_r = 1900 with the low loss tangents 0.06, the S_max/E_max of ~400 and ~460 pm/V under unipolar and bipolar electric field, respectively. Meanwhile, piezoelectric constant d₃₃ still maintained ~160 pC/N. These could be owed to the formation of polar nanoregions for relaxor phase.     

Large Strain Response and Fatigue‐Resistant Behavior in Ternary Bi0.5Na0.5TiO3–BaTiO3–Bi(Zn0.5Ti0.5)O3 Solid Solutions

A ternary solid solution (1 ? x)(0.88Bi_0.5Na_0.5TiO₃–0.12BaTiO₃)‐xBi(Zn_0.5Ti_0.5)O₃ (BNBZT, BNBZTx) was designed and fabricated using the traditional solid‐state reaction method. The temperature and composition dependence of dielectric, ferroelectric, piezoelectric, and fatigue properties were systematically investigated and a schematic phase diagram was proposed. The substitution with Bi(Zn_0.5Ti_0.5)O₃ was found to shift the phase transition (ferroelectric tetragonal to relaxor pseudocubic phase) to lower temperatures. At a critical composition x of 0.05, large electric‐field‐induced strain response with normalized strain S_max/E_max as high as 526 pm/V was obtained under a moderate field of 4 kV/mm around room temperature. The strain exhibited good temperature stability within the temperature range of 25°C–120°C. In addition, excellent fatigue‐resistant behavior was observed in the proposed BNBZT solid solution after 10⁶ bipolar cycles. These give the BNBZT system great potential as environmental friendly solid‐state actuator.     

Temperature‐stable dielectric and energy storage properties of La(Ti0.5Mg0.5)O3‐doped (Bi0.5Na0.5)TiO3‐(Sr0.7Bi0.2)TiO3 lead‐free ceramics

A new type of (0.7?x)Bi_0.5Na_0.5TiO₃‐0.3Sr_0.7Bi_0.2TiO₃‐xLaTi_0.5Mg_0.5O₃ (LTM1000x, x = 0.0, 0.005, 0.01, 0.03, 0.05 wt%) lead‐free energy storage ceramic material was prepared by a combining ternary perovskite compounds, and the phase transition, dielectric, and energy storage characteristics were analyzed. It was found that the ceramic materials can achieve a stable dielectric property with a large dielectric constant in a wide temperature range with proper doping. The dielectric constant was stable at 2170 ± 15% in the temperature range of 35‐363°C at LTM05. In addition, the storage energy density was greatly improved to 1.32 J/cm³ with a high‐energy storage efficiency of 75% at the composition. More importantly, the energy storage density exhibited good temperature stability in the measurement range, which was maintained within 5% in the temperature range of 30‐110°C. Particularly, LTM05 show excellent fatigue resistance within 10⁶ fatigue cycles. The results show that the ceramic material is a promising material for temperature‐stable energy storage.     

Structure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of BiFeO3‐BaTiO3‐Bi0.5Na0.5TiO3 Lead‐Free Multiferroic Ceramics

Lead‐free multiferroic ceramics of BiFeO₃‐BaTiO₃‐Bi_0.5Na_0.5TiO₃ have been prepared by a conventional ceramic technique. The microstructure, multiferroic, and piezoelectric properties of the ceramics have been studied. The ceramics sintered at 1000°C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and tetragonal phases is formed at x = 0.02. After the addition of Bi_0.5Na_0.5TiO₃, two dielectric anomalies are observed at high temperatures (T_m ~ 510°C–570°C and T₂ ~ 720°C). The phase transition around T_m becomes wider gradually with increasing x. The ferroelectricity, piezoelectricity, and ferromagnetism of the ceramics are significantly improved after the addition of Bi_0.5Na_0.5TiO₃. High resistivity (~1.3 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 27.4 μC/cm²), good piezoelectricity (d₃₃ =140 pC/N, k_p = 31.4%), and weak magnetic properties (M_r =0.19 emu/g) are observed.     

Effects of CuO Addition on Electrical Properties of 0.6BiFeO3–0.4(Bi0.5K0.5)TiO3 Lead‐Free Piezoelectric Ceramics

0.6BiFeO₃–0.4(Bi_0.5K_0.5)TiO₃ (0.6BF–0.4BKT) ceramic samples with 0.0–4.0 mol% CuO were prepared by the solid‐state reaction. The CuO addition aided the densification of the samples and slightly increased the lattice constant. The relaxor‐like defuse dielectric peak of 0.6BF–0.4BKT became sharper with increasing the CuO content. Polarization–electric field curve of the undoped 0.6BF–0.4BKT was a pinched loop in the as‐sintered state, while that was a square hysteresis with a large remanent polarization of 48 μC/cm² after the thermal quenching, demonstrating a strong domain wall pinning due to defect dipoles. We found that the CuO addition up to 2.0 mol% facilitates the polarization switching in the as‐sintered samples to increase the remanent polarization and the piezoelectric d₃₃ coefficient. The results of the structural and electrical investigations suggested that the copper ion acts as a donor in 0.6BF–0.4BKT by compensating the potassium vacancy created by the evaporation of K₂O during the calcination and sintering processes.     

Temperature‐Insensitive High Strain in Lead‐Free Bi0.5(Na0.84K0.16)0.5TiO3–0.04SrTiO3 Ceramics for Actuator Applications

Lead‐free piezoelectric ceramics, 0.96[{Bi_0.5 (Na_0.84K_0.16)_0.5}_1?xLi_x(Ti_1?yNb_y)O₃]–0.04SrTiO₃ (BNKLiTN–ST) with x, y = 0–0.030, were synthesized by solid‐state reaction method. X‐ray diffraction patterns indicated that Li and Nb successfully diffused into the BNKT–ST lattice and formed a pure perovskite structure with x, y ≤ 0.025. Increasing the Li and Nb contents (x, y = 0.020) induced a phase transformation from the coexistent rhombohedral–tetragonal phases for pure BNKT–ST ceramics to a pseudocubic phase, resulting in degradation of the remnant polarization and coercive field. However, the field‐induced strain was markedly enhanced at x, y = 0.020, giving rise to a giant dynamic piezoelectric constant (d₃₃* = S_max/E_max = 800 pm/V). Furthermore, the temperature dependence of the field‐induced strain response showed temperature‐insensitivity up to 120°C. To explore its potential for device applications, a 10‐layered stack‐type multilayer actuator was fabricated from the optimal composition (x, y = 0.020). This actuator showed a large S_max/E_max of 600 pm/V at a relatively low driving field of 4.5 kV/mm suggesting highly promising results in lead‐free BNT‐based ceramics.     

New Lead‐Free (1 − x)(K0.5Na0.5)NbO3–x(Bi0.5Na0.5)ZrO3 Ceramics with High Piezoelectricity

For enhancing the piezoelectric properties of ceramics (Bi_0.5Na_0.5)ZrO₃ (BNZ) was used to partially substitute (K_0.5Na_0.5)NbO₃ (KNN). The addition of BNZ changes the symmetry of KNN ceramics from orthorhombic to tetragonal, and finally to rhombohedral phase. A new phase boundary with both rhombohedral–orthorhombic and orthorhombic–tetragonal phase transitions near room temperature is identified for KNN–0.050BNZ ceramics, where optimum electrical properties were obtained: d₃₃ = 360 pC/N, k_p = 32.1%, ε_r = 1429, tanδ = 3.5%, and T_C = 329°C. The results indicated a new method for designing high‐performance lead‐free piezoelectric materials.     

Enhanced piezoelectric properties and electrocaloric effect in novel lead‐free (Bi0.5K0.5)TiO3‐La(Mg0.5Ti0.5)O3 ceramics

The crystal structure, electromechanical properties, and electrocaloric effect (ECE) in novel lead‐free (Bi_0.5K_0.5)TiO₃‐La(Mg_0.5Ti_0.5)O₃ ceramics were investigated. A morphotropic phase boundary (MPB) between the tetragonal and pseudocubic phase was found at x = 0.01‐0.02. In addition, the relaxor properties were enhanced with increasing the La(Mg_0.5Ti_0.5)O₃ content. In situ high‐temperature X‐ray diffraction patterns and Raman spectra were characterized to elucidate the phase transition behavior. The enhanced ECE (ΔT = 1.19 K) and piezoelectric coefficient (d₃₃ = 103 pC/N) were obtained for x = 0.01 at room temperature. Meanwhile, the temperature stability of the ECE was considered to be related to the high depolarization temperature and relaxor characteristics of the Bi_0.5K_0.5TiO₃‐based ceramics. The above results suggest that the piezoelectric and ECE properties can be simultaneously enhanced by establishing an MPB. These results also demonstrate the great potential of the studied systems for solid‐state cooling applications and piezoelectric‐based devices.     

Large Electrostrictive Strain in (Bi0.5Na0.5)TiO3–BaTiO3–(Sr0.7Bi0.2)TiO3 Solid Solutions

Relaxor ferroelectrics (0.94 ? x)(Bi_0.5Na_0.5)TiO₃–0.06BaTiO_3?x(Sr_0.7Bi_0.2□_0.1)TiO₃ (BNT–BT–xSBT) (0 ≤ x ≤ 0.5), were prepared by a solid‐state reaction process, and their structures were characterized by the transmission electron microscopy and Raman spectroscopy. The BNT–BT–0.3SBT has a very high electrostrictive strain S = 0.152% with hysteresis‐free behavior, much more than the reported S in other ferroelectrics. S–P² profiles perfectly follow the quadratic relation, which indicates a purely electrostrictive effect with a high electrostrictive coefficient (Q₁₁) of 0.0297 m⁴/C². Even, its Q₁₁ keeps at a high level in the temperature range from ambient temperature to 180°C. The field‐induced large electrostrictive strain of BNT–BT–0.3SBT was attributed to the existence of ferroelectric nanodomains.     

The Effect of Electric Poling on the Performance of Lead‐Free (1−x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 Piezoceramics

The effect of increasing poling fields on the properties of (1?x)BZT–xBCT compositions across the morphotropic phase boundary (MPB) is studied using large signal polarization and strain, small signal permittivity and piezoelectric coefficient, and XRD measurements. Successive poling causes charge carrier migration inducing an internal bias field, which becomes large with respect to the coercive field resulting in biased ferroelectric and ferroelastic switching. Improvements in piezoelectric coefficient of 9% are significantly smaller in the tetragonal 60BCT composition compared with the improvement of approximately 50% in the rhombohedral 40BCT and MPB 50BCT compositions. While the properties continue to change with increased poling fields, the remnant ferroelastic domain texture parallel to the field direction, as observed from XRD, stays approximately constant. The improvement in overall domain alignment leading to largely enhanced intrinsic piezoelectricity originates from the alignment of 180° domains and possibly non‐180° domains in grains with orientations inclined to the electric field. As a result, poling is most effective in BZT–BCT materials that have low coercive fields, show low distortions and possess more polarization orientations, such as compositions in the rhombohedral phase field or near the MPB.     

Electric Field Cycling Induced Large Electrostrain in Aged (K0.5Na0.5)NbO3–Cu Lead‐Free Piezoelectric Ceramics

In this work, we studied aging and fatigue behaviors of 1.0 mol%Cu‐modified (Na_0.5K_0.5)NbO₃ lead‐free ceramics with double‐loop‐like characteristic, and found an interesting result of electric field cycling induced large electrostrain in the aged samples. After the “aging” treatment, the hysteresis loop “closes” totally and constricts completely at zero electric field, accompanying with a large nonlinear electrostrain of about 0.26%. More interestingly, the electrostrain in the aged sample is sensitive to the field cycling, which is pushed to a higher level of 0.47% approaching that of some Pb‐based antiferroelectric materials. A microscopic model of the domain switching‐related electrostrain effect is proposed to explain the field cycling induced large electrostrain in the aged samples. It can be identified due to the weakening of intrinsic restoring force for reversing the switched domains, induced by the point defects (defect dipoles) migration aligning along field direction during cycling, evident by the gradually “opened” hysteresis loop with cycling.