Conditions for growth of AlN single crystals in Al–Sn flux

In this study, we investigated the Al–Sn flux system and its growth conditions to obtain AlN single crystals. AlN single crystals of a size of 50 μm were successfully grown using an Al–Sn melt under nitrogen gas pressure. The growable region of the AlN crystals was established using a pressure‐temperature diagram. The required nitrogen gas pressure for the growth of the AlN crystals was found to decrease with increasing temperature, and AlN was grown at 0.1 MPa nitrogen pressure above 1300°C. By investigating the AlN yield with various Al concentrations, we confirmed that the Al component in the Al–Sn melt facilitated nitrogen dissolution. Finally, scanning electron microscopy analysis showed that the obtained AlN particles showed good morphology.     

Preparation of AlN powder of low oxygen content via carbothermal reduction and nitridation by active gas exchange technique

By generating a periodic impulse-like pressure (2.0–4.4 kPa, 84 s) to actively exchange the gas in synthesis furnace, pure AlN powder of low oxygen content was synthesized via additive free carbothermal reduction and nitridation (CRN) of Al₂O₃ powder. Compared with the conventional CRN method, the proposed extra gas exhaust process can more effectively remove the side-produced CO from the reaction sites to accelerate nitridation process and decrease the residual oxygen content in the obtained AlN powder. For example, with 39 wt% activated carbon loaded in the raw material at 1650 °C for 4 h, the prepared AlN powder by the proposed synthesis scheme has only 0.68 wt% residual oxygen. The effects of carbon content, synthesis temperature and holding time on the residual oxygen content in AlN powder by the proposed synthesis scheme were also studied. The ball-milled as-prepared AlN powder was pressureless sintered at 1880 °C for 2.5 h to obtain a translucent AlN ceramics (37.6% at ~5700 nm), which demonstrates the excellent sinterability of the as-prepared AlN powder.     

Low-temperature hot-press sintering of AlN ceramics with MgO–CaO–Al2O3–SiO2 glass additives for ceramic heater applications

Aluminum nitride (AlN) is used a ceramic heater material for the semiconductor industry. Because extremely high temperatures are required to achieve dense AlN components, sintering aids such as Y₂O₃ are typically added to reduce the sintering temperature and time. To further reduce the sintering temperature, in this study, a low-melting-temperature glass (MgO–CaO–Al₂O₃–SiO₂; MCAS) was used as a sintering additive for AlN. With MCAS addition, fully dense AlN was obtained by hot-press sintering at 1500 °C for 3 h at 30 MPa. The mechanical properties, thermal conductivity, and volume resistance of the sintered AlN–MCAS sample were evaluated and compared with those of a reference sample (AlN prepared with 5 wt% Y2O3 sintering aid sintered at 1750 °C for 8 h at 10 MPa). The thermal conductivity of AlN prepared with 0.5 wt% MCAS was 91.2 W/m?K, which was 84.8 W/m?K lower than that of the reference sample at 25 °C; however, the difference in thermal conductivity between the samples was only 14.2 W/m?K at the ceramic-heater operating temperature of 500 °C. The flexural strength of AlN–MCAS was 550 MPa, which was higher than that of the reference sample (425 MPa); this was attributed to the smaller grain size achieved by low-temperature sintering. The volume resistance of AlN–MCAS was lower than that of the reference sample in the range of 200–400 °C. However, the resistivity of the proposed AlN–MCAS sample was higher than that of the reference sample (500 °C) owing to grain-boundary scattering of phonons. In summary, the proposed sintering strategy produces AlN materials for heater applications with low production cost, while achieving the properties required by the semiconductor industry.     

Formation of (Al2OC)1−x(AlN)x solid solution starting from Al–Si–Al2O3 powder matrix at 1300°C in flowing nitrogen

(Al₂OC)_1−x(AlN)_x solid solution-reinforced Si–Al₂O₃ composite was successfully synthesized by designed heating of the Al–Si–Al₂O₃ composite to 580°C and held for 8 hours, followed by heating to 1300°C at a rate of 12°C/h in flowing nitrogen. The reaction mechanism is as follows: after the Al–Si–Al₂O₃ composite is heated to 580°C and held for 8 hours, an AlN cladding is formed on the surface of the Al powder, thus the composite is preconverted into (Al–AlN cladding structure)–Si–Al₂O₃ system. With increasing temperature, the AlN cladding ruptures and the reactive Al(l) flows out. The Al(l) preferentially undergoes active oxidation to form metastable Al₂O(g), which lowers P_O2 inside the composite and inhibits the active oxidation of Si. Moreover, ultrafine carbon is produced by the pyrolysis of the phenolic resin binder. Both metastable Al₂O(g) and ultrafine carbon are highly reactive. Therefore, under the induction of AlN and N₂, (Al₂OC)_1−x(AlN)_x solid solution is formed by the reaction which easily occurs at a relatively low temperature. In the presence of a large amount of Al₂O(g), the P_O2 in the composite does not satisfy the condition required for both Si nitridation and active oxidation, so the free Si remains stable in the composite, forming a metal-non-oxide-oxide composite. The cold crushing strength of the composites is up to 305 MPa, and the composites do not show hydration after 20 months of storage in the environment.     

Combustion synthesis of AlN doped with carbon and oxygen

Carbon-and-oxygen-doped AlN specimens were prepared by combustion synthesis using Al, graphite, and AlN. Graphite addition changed the product color from white to blue. By XRD, the lattice constant increased slightly with increasing carbon content. Blue AlN powder was synthesized with a molar ratio of the diluent AlN of 0.2-0.5 with a fixed graphite content of 0.05. At an AlN molar ratio exceeding 0.6, carbon was not successfully incorporated due to the lower reaction temperature. Calcination at 800°C in air removed residual graphite without changing the crystal structure or product color. Oxygen, nitrogen, and carbon analyses revealed that blue AlN powders contained 0.45-0.54 mass% carbon and 1.4-1.6 mass% oxygen, while the undoped AlN contained 0.021 mass% carbon and 0.94 mass% oxygen. The origin of the white-to-blue color change was investigated via reflection measurements. Blue AlN exhibits an absorption peak at 634 nm (1.96 eV). From first-principles electronic structure calculations, the C-doped AlN and carbon-and-oxygen-doped AlN with a 1:1 ratio could be classified as p-type, whereas the O-doped AlN and 1:3 carbon-and-oxygen-doped AlN were n-type. One reason for the absorption peak at 634 nm may be a transition from the conduction band to an upper unoccupied state. These results suggest the possible control of optical and electronic properties of AlN via carbon-and-oxygen doping.     

Two‐Step Carbothermal Synthesis of AlN–SiC Solid Solution Powder Using Combustion Synthesized Precursor

In the present work, a two‐step carbothermal reduction method is employed to prepare the AlN–SiC solid solution (AlN–SiCss) powders by using a combustion synthesized precursor. The precursor is prepared by low‐temperature combustion synthesis (LCS) method using a mixed solution of aluminum nitrate, silicic acid, polyacrylamide, glucose, and urea. The synthesized LCS precursor exhibits a porous and foamy uniform mixture of Al₂O₃ + SiO₂ + C consisting of flaky particles. The carbothermal reduction in the LCS precursor is carried out in two steps. First, the precursors are calcined at 1600°C in argon for 3 h. Subsequently, the precursors are further calcined at 1600°C–1900°C in nitrogen for 3 h. The results indicate that the precursor calcined at and above 1850°C in nitrogen for 3 h yields the single‐phase AlN–SiCss powders. The synthesized AlN–SiCss powder exhibits near‐spherical particles with diameter of 200–500 nm. The experimental and thermodynamical results reveal that the formation of AlN–SiCss occurs via the diffusion of AlN into SiC by virtue of formation of a highly defective β′ intermediate during the second step reaction.     

Formation mechanism of AlN-SiC solid solution with multiple morphologies in Al-Si-SiC composites under flowing nitrogen at 1300 °C

The non-oxide-reinforced phase AlN-SiC solid solution with high performance was successfully synthesized in the resin-bonded Al-Si-SiC composites under flowing nitrogen at 1300 °C. The AlN-SiC solid solution was synthesized by three paths of liquid-solid, gas-solid and gas-gas reactions through modulation of Al/Si ratio, and controllable microstructure of AlN-SiC solid solution was attained. The phase composition and microstructure of the sintered samples were characterized by XRD and SEM, combined with thermodynamics, the formation mechanism of AlN-SiC solid solution was investigated and the reaction model was established. Al was not detected while Si was detested by XRD. Granular, short columnar and whisker-like AlN-SiC solid solution were generated and their positions varied. As the temperature increases, the partial pressure of oxygen decreases due to the oxidation of Al, Si and SiC on the surface of the sample, inside the sample, the active oxidation takes place, generating Al₂O(g), SiO(g) and CO(g). Due to the low oxygen partial pressure, Al is preferentially nitrided to form a thin AlN layer on its surface. The AlN layer is broken as the temperature increases, then liquid Al with carbon from resin begins to flow, leaving the residual shell of AlN in situ. When it flows to the surface of Si, Al-Si_alloy is formed locally inside the Si particles under the wetting effect of C, then hexagonal AlN-SiC solid solution is formed inside the Si shell. Part of SiO(g) + CO(g) diffuses into the interior of the AlN residual shell and reacts by aggregation to form a granular AlN-SiC solid solution in the shell wall; others diffuses into the pores of the sample for vapor deposition, and finally forms stacked hexagonal flaky whiskers. The in-situ generated of AlN-SiC solid solution with multiple morphologies in the composite plays a joint toughening effect, which can significantly enhance the comprehensive performance of the composite. In this experiment, the synthesis of AlN-SiC solid solution without sintering aids under normal pressure at a low temperature. It is expected to be applied to the blast furnace and to realize the longevity of blast furnace.     

High pressure sintering of cubic boron nitride compacts with Al and AlN

Cubic boron nitride (cBN) compacts, using 15 wt.% Al and 20 wt.% AlN respectively as additives, were sintered in the temperature range of 1300–1700 °C for 20 min under high pressure of 5.0 GPa. The hardness, microstructure, phase composition and cutting performance of the high pressure sintered samples were investigated. A liquid phase sintering and reaction process was observed in the cBN–Al system, which leads to the formation of AlN and AlB₂ as confirmed by X-ray diffraction (XRD) in the sintered compacts. Scanning electron microscopy (SEM) analysis shows that the samples have a homogeneous microstructure. The hardness decreases with increase of sintering temperature and reaches the highest Vickers hardness of 32.1 GPa at 1350 °C. While in the cBN–AlN system, AlN grains agglomerate heavily at temperature below ~ 1500 °C. As the sintering temperature increasing, Al₂O₃ appeared and the AlN agglomeration disappeared gradually. A highest cBN–AlN composite hardness of 29 GPa was achieved when sintered at 1600 °C. Turning tests showed that cBN compacts with 15 wt.% Al as the additive has a longer tool life as compared to that with 20 wt.% AlN. Our results indicated that cBN–Al system is more favourable to obtain well-sintered cBN compacts comparing with the cBN–AlN system.     

Effect of nano aluminum nitride filler on mechanical,thermal, and dielectric properties of the glass/mullite composites for low-temperature co-fired ceramic applications

Mullite/glass/nano aluminum nitride (AlN) filler (1–10 wt% AlN) composites were successfully fabricated for the low-temperature co-fired ceramics applications that require densification temperatures lower than 950°C, high thermal conductivity to dissipate heat and thermal expansion coefficient matched to Si for reliability, and low dielectric constant for high signal transmission speed. Densification temperatures were ≤825°C for all composites due to the viscous sintering of the glass matrix. X-ray diffraction proved that AlN neither chemically reacted with other phases nor decomposed with temperature. The number of closed pores increased with the AlN content, which limited the property improvement expected. A dense mullite/glass/AlN (10 wt%) composite had a thermal expansion coefficient of 4.44 ppm/°C between 25 and 300°C, thermal conductivity of 1.76 W/m.K at 25°C, dielectric constant (loss) of 6.42 (0.0017) at 5 MHz, flexural strength of 88 MPa and elastic modulus of 82 GPa, that are comparable to the commercial low temperature co-fired ceramics products.     

Reaction sintering of AlN–AlON composites

Sintering behavior of three different compositions in the AlN–Al₂O₃ system using Y₂O₃ as a sintering aid was investigated. Samples with various ratios of AlN/Al₂O₃ were sintered in nitrogen atmosphere using a gas pressure furnace in the temperature range 1750–1950 °C. The densification of the samples was studied by shrinkage and relative density measurements. Results showed that samples containing 1 and 70 wt.% alumina were sintered to near theoretical density at 1800 °C; whereas the sample with 20 wt.% alumina never reached densities higher than 93% in the temperature range considered. It was found that the AlN/Al₂O₃ ratio and the sintering temperature had a great influence on the microstructure and crystalline phases present in the samples, namely, AlN, γ-AlON, 27R, and YAG. In the sample with 20 wt.% alumina, porosity formation prevented further densification. These porosities were probably due to the release of oxygen during sintering.     

An oxygen transfer model for high purity graphite oxidation

An intrinsic mathematical model is developed for the investigation of the gas–solid reaction kinetics of high-purity graphite and oxygen. This model is based upon the oxygen transfer mechanism and uses physically meaningful parameters that are directly comparable to the experimental and theoretical literature of the carbon–oxygen reaction system. The model was used to extract reaction parameters for NBG-18 polycrystalline graphite for oxygen/nitrogen mixtures with a total pressure of 100 kPa. Experimental temperatures ranged from 500 to 850 °C for oxygen partial pressures of 1, 5, 10, 20, and 40 kPa. The optimized model parameters are in good agreement with previously reported literature values.     

Onset of selective laser flash sintering of AlN

Flash sintering uses a combination of heating and electric fields to rapidly densify ceramics. Previously, it has been shown that a scanning laser can be used to initiate flash sintering in localized regions on an yttria-stabilized zirconia (YSZ) sample in a process known as selective laser flash sintering (SLFS). In this work, we show using a combination of measurements of electric current flowing through the sample and observations of necks formed between powder particles that aluminum nitride (AlN) can also undergo SLFS. Scan conditions required to initiate SLFS are characterized over a range of laser powers and laser scan speeds in a dry nitrogen environment. It is shown that initiation of SLFS in AlN is governed by both the local input energy density per scan and heat dissipation and a numerical model is developed to predict temperatures during SLFS. Assuming the minimum temperature along the conductive path determines the onset of SLFS, the minimum temperature and time required is 450–670 K in 2–0.25 s for the pressed AlN pellets used in this study for laser scan speeds of 33–300 m/s, laser powers of 10–30 W, and an applied electric field of 3000 V/cm.     

Epitaxial aluminum nitride thin films grown by pulsed laser deposition in various nitrogen ambients

The effect of nitrogen ambient pressure on growth of AlN films has been examined. High-quality epitaxial AlN films were grown on (0001) sapphire substrates using pulsed laser deposition from a sintered AlN target in low nitrogen ambient of 9.0×10⁻⁵ Torr. The orientation of AlN films can be controlled by nitrogen pressure. AlN films are c-axis oriented when grown in a nitrogen pressure of 9.0×10⁻⁵ to 4.0×10⁻² Torr. Film orientation converted to a-axis as nitrogen pressure increased to 4.0×10⁻¹ Torr. The X-ray rocking curves of the AlN (0002) peak became narrower with decreasing ambient pressure and yielded a full width at half-maximum of 0.078°. The N/Al composition ratio increases with nitrogen pressure.     

The microstructure and properties of energetically deposited carbon nitride films

The intrinsic stress, film density and nitrogen content of carbon nitride (CN_x) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CN_x including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (~ 30%) was deposited at room temperature with 1.0 mTorr N₂ pressure and using an intermediate bias of − 400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 °C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon–nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (~ 50 GPa) to softer and highly ductile CN_x which contained tangled graphite-like sheets. Through-film current–voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films.     

Flexible ultrafine nearly stoichiometric polycrystalline SiC fibers with excellent oxidation resistance and superior thermal stability up to 1900 °C

Flexible ultrafine SiC fibers with superior high-temperature stability and excellent oxidation resistance are regarded as one of the most promising materials for high-temperature applications. However, excess oxygen and carbon in the ultrafine SiC fibers limit their thermal stability due to decomposition of the SiC_xO_y phase. In the present work, flexible ultrafine nearly stoichiometric polycrystalline SiC fibers were fabricated by combining the electrospinning technique and polymer-derived ceramic method. The ultrafine SiC fibers exhibited superior high-temperature stability and oxidation resistance. The retention rates of tensile strength were 90.0 %, 94.2 % and 86.4 % after heat treatment in argon at 1800 °C, 1900 °C and 2000 °C, respectively. TG results of the fibers showed little weight loss of only 1.52 % at 1900 °C in Ar and the weight gain of only 4.1 % up to 1500 °C in air. Such improved thermal stability was achieved through sintering at high temperature for elimination of excess oxygen and carbon with Al doped as the sintering aid to restrain the grain coarsening. The ultrafine SiC fibers still exhibited excellent flexibility without obvious damage when they were heated by the butane blowtorch flame of about 1100 °C in air. Furthermore, the infrared thermography illustrated that the ultrafine SiC fiber membrane also had good thermal insulation performance. The outstanding mechanical properties and thermal stability of ultrafine SiC fibers suggest their potential applications at the high temperature and harsh environment.     

Design and operational considerations of catalytic membrane reactors for ammonia synthesis

Production of ammonia using hydrogen derived from renewable electricity instead of hydrocarbon reforming would dramatically reduce the carbon footprint of this commodity chemical. Novel technologies such as catalytic membrane reactors (CMRs) may potentially be more compatible with distributed ammonia production than the conventional Haber–Bosch process. A reactor model is developed based on integrating a standard industrial iron catalyst into a CMR equipped with an inorganic membrane that is selective to NH₃ over N₂/H₂. CMR performance is studied as functions of wide ranges of membrane properties and operating conditions. Conversion and ammonia recovery are dictated principally by the ammonia permeance, and the benefits by using membranes become significant above 100 GPU = 3.4 × 10⁻⁸ mol m⁻² s⁻¹ Pa⁻¹. To be effective, the CMR requires a minimum selectivity for ammonia of 10 over both nitrogen and hydrogen and purity scales with the effective selectivity. Increasing the pressure of operation significantly improves all metrics, and at P = 30 bar with a quality membrane, ammonia is almost completely recovered, enabling direct recycle of unreacted hydrogen and nitrogen without need for recompression. Temperature drives conversion and scales monotonically without thermodynamic limitations in a CMR. Alternatively, the temperature may be reduced as low as 300°C while achieving conversion levels surpassing equilibrium limits at T = 400°C in a conventional reactor.     

Synthesis of nanosized zirconium carbide powders by a combinational method of sol–gel and pulse current heating

Zirconium carbide nanopowders were synthesized by a novel method combining the advantages of sol–gel method and rapid synthesis using pulse current heating. The core-shelled structure of ZrO₂/C mixture was obtained during the sol–gel process, and further heat treatment in SPS led to the fast formation of ZrC. The particle size of ZrO₂ played an important role in the synthesis of nanosized ZrC powders. In addition, the coalescence and grain growth of ZrC particles could be also limited due to the fast heating rate. As a result, the reactions were thoroughly completed at a relatively low temperature and ZrC nanopowders of 60–100 nm were obtained. The corresponding powders also had low oxygen content (∼0.64 wt%) and residual carbon content (∼0.27 wt%). Additive-free ZrC powders could be sintered to ∼99% relative density with an average grain size of 0.8 μm at low temperature of 1750 °C.     

Effect of YF3 on densification behavior and thermal conductivity of AlN ceramics with Y2O3–YF3 additives under reducing atmosphere

The effect of yttrium fluoride (YF₃) on the densification behavior, microstructure, phase composition and thermal conductivity of aluminium nitride (AlN) ceramics with yttrium oxide (Y₂O₃) and YF₃ additives were studied. Since YF₃ provided liquid phases and promoted densification at a lower temperature, the sintering temperature required to reach the full density of AlN samples decreased with the increase in YF₃ content. Appropriate addition of YF₃ could improve the thermal conductivity of AlN ceramics, but the values of thermal conductivity decreased as YF₃ increased further. It is attributed to the ability of YF₃ to react with oxygen impurity was worse than that of Y₂O₃. Moreover, the reducing atmosphere significantly affected the phase composition, and the oxygen content in grain boundary phases decreased at 1750 °C and 1800 °C. Therefore, the proper proportion of Y₂O₃–YF₃ additives could simultaneously improve densification and the thermal conductivity of AlN samples at a low sintering temperature.     

Spark plasma sintering of Sm2O3-doped aluminum nitride

The high sintering temperature required for aluminum nitride (AlN) at typically 1800 °C, is an impediment to its development as an engineering material. Spark plasma sintering (SPS) of AlN is carried out with samarium oxide (Sm₂O₃) as sintering additive at a sintering temperature as low as 1500–1600 °C. The effect of sintering temperature and SPS cycle on the microstructure and performance of AlN is studied. There appears to be a direct correlation between SPS temperature and number of repeated SPS sintering cycle per sample with the density of the final sintered sample. The addition of Sm₂O₃ as a sintering aid (1 and 3 wt.%) improves the properties and density of AlN noticeably. Thermal conductivity of AlN samples improves with increase in number of SPS cycle (maximum of 2) and sintering temperature (up to 1600 °C). Thermal conductivity is found to be greatly improved with the presence of Sm₂O₃ as sintering additive, with a thermal conductivity value about 118 W m⁻¹ K⁻¹) for the 3 wt.% Sm₂O₃-doped AlN sample SPS at 1500 °C for 3 min. Dielectric constant of the sintered AlN samples is dependent on the relative density of the samples. The number of repeated SPS cycle and sintering aid do not, however, cause significant elevation of the dielectric constant of the final sintered samples. Microstructures of the AlN samples show that, densification of AlN sample is effectively enhanced through increase in the operating SPS temperature and the employment of multiple SPS cycles. Addition of Sm₂O₃ greatly improves the densification of AlN sample while maintaining a fine grain structure. The Sm₂O₃ dopant modifies the microstructures to decidedly faceted AlN grains, resulting in the flattening of AlN–AlN grain contacts.     

Large-scale synthesis of AlN nanofibers by direct nitridation of aluminum

AlN nanopowders and nanofibers were synthesized by direct nitridation of Al and rice bran mixture compacts in a tube furnace up to 1300 °C in a nitrogen flow without addition of extra catalyst. The effect of the compaction pressure applied onto the green bodies on the morphology of the final AlN products was investigated. A green body compacting pressure in between 320 MPa and 480 MPa was found to be favorable for the synthesis of AlN fibers with aspect ratio up to 400, diameter in the range of 50–500 nm, and length up to tens of micrometers; for a lower pressure of 160 MPa and a higher pressure of 640 MPa, nano-sized AlN powders were the primary morphology in the final product. The AlN products were characterized by several techniques and the VLS growth mechanism was proposed as the main reason for the AlN fibers formation.