High Power Performance of Manganese‐Doped BNT‐Based Pb‐Free Piezoelectric Ceramics

Electromechanical properties and high power characteristics of Pb‐free hard piezoelectric ceramics in the (BiNa_0.88K_0.08Li_0.04)_0.5 (Ti_1?xMn_x)O₃ (x = 0, 0.014, 0.015, and 0.016) system were studied. Mn doping resulted in a considerable enhancement of mechanical quality factor Q_m and vibration velocity. The lowest mechanical and dielectric losses were achieved in 1.5 mol% Mn‐doped ceramics with a planar Q_m of about 970 and tanδ of 0.89%. The heat dissipation and resonance frequency shift under high drive condition were remarkably suppressed upon Mn doping. The maximum vibration velocity was increased from 0.28 m/s in undoped ceramic to 0.6 m/s in 1.5 mol% Mn‐doped composition. The results of this study revealed that Mn‐doped BNT‐based piezoelectrics exhibited a superior high power performance compared to their lead‐based counterparts such as PZT4 and PZT8 ceramics.     

Investigation of MnO2‐doped (Ba,Ca)TiO3 lead‐free ceramics for high power piezoelectric applications

x% mol MnO₂‐doped Ba_0.925Ca_0.075TiO₃ ceramics (abbreviated as BCT‐Mnx, x=0‐1.5) were synthesized by conventional solid‐state reaction method. The effects of MnO₂ addition and (Ba+Ca)/Ti mole ratio (A/B ratio) on the microstructure and electrical properties of the ceramics were investigated. The internal bias filed E_i was determined from the asymmetrical polarization hysteresis loops and found to increase with the doping concentration of MnO₂. High mechanical quality factors (Q_m>1200) and low dielectric loss (tanδ<0.5%) were found in the BCT‐Mn0.75 and BCT‐Mn1.0 ceramics with E_i>3 kV/cm, meanwhile, the piezoelectric and electromechanical properties were found to decrease compared with the pure BCT, exhibiting a typical characteristic of “hard” behavior. Of particular interest is that the microstructure of BCT‐Mn0.75 ceramics could be controlled by changing the A/B ratio, where enhanced piezoelectric coefficient d₃₃ on the order of 190 pC/N was obtained in the BCT‐Mn0.75 ceramics with A/B=1.01 due to its fine‐grained microstructure, with yet high Q_m, being on the order of 1000. The high d₃₃ and Q_m in MnO₂‐doped BCT ceramics make it a promising candidate for high power piezoelectric applications.     

Remarkably High‐Temperature Stability of Bi(Fe1−xAlx)O3–BaTiO3 Solid Solution with Near‐Zero Temperature Coefficient of Piezoelectric Properties

The 0.72Bi(Fe_1?xAl_x)O₃–0.28BaTiO₃ (x = 0, 0.01, 0.03, 0.05, and 0.07, abbreviated as BFAx–BT) lead‐free high‐temperature ceramics were prepared by the conventional ceramic processing. Systematic investigation on the microstructures, crystalline structures, dielectric and piezoelectric properties, and high‐temperature stability of piezoelectric properties was carried out. The crystalline structures of BFAx–BT ceramics evolve from rhombohedral structure with x < 0.01 to the coexistence of rhombohedral structure and pseudocubic phases with x ≈ 0.01, finally to pseudocubic phases when x > 0.03. Remarkably high‐temperature stability with near‐zero temperature coefficient of piezoelectric properties (TCk_p), together with improved piezoelectric properties has been achieved for x = 0.01 BFAx–BT ceramics. The BFAx–BT(x = 0.01) ceramics simultaneously show the excellent piezoelectric properties of d₃₃ = 151 pC/N, k_p = 0.31 and super‐high‐temperature stability of T_d = 420°C, TCk_p = 1 × 10^?4. It is considered that the observed strong piezoelectricity and remarkably high‐temperature stability should be ascribed to the phase coexistence of rhombohedral and pseudocubic phases. The rhombohedral phases have a positive TCk_p value and the pseudocubic phases possess a negative TCk_p value. Thus, the TCk_p value of BFAx–BT ceramics can be tuned by composition of x.     

Electromechanical Properties of Acceptor‐Doped Lead‐Free Piezoelectric Ceramics

We have studied the processing and electromechanical properties of Mn and Fe‐doped 0.88[Bi_0.5Na_0.5TiO₃]–0.08[Bi_0.5K_0.5TiO₃]–0.04[Bi_0.5Li_0.5TiO₃] piezoelectric ceramics prepared by the mixed oxide route. Different amounts of Mn (0.01, 0.014, 0.015, 0.016, 0.017, 0.02, 0.022) or Fe (0.0125, 0.015, 0.0175) were doped to this lead‐free piezoelectric composition. Ceramics were sintered at different temperatures (1075°C–1150°C) to achieve the highest density and mechanical quality factor. Mn or Fe doping resulted in a considerable enhancement of Q_m in both planar and thickness resonance modes. In 1.5 mol% Mn‐doped ceramics sintered at 1100°C, a planar Q_m of about 970 and tanδ of 0.88% were obtained. In Fe‐doped ceramics, a planar Q_m as high as 900 was achieved. Acceptor dopants also resulted in decreasing the coupling coefficients, the piezoelectric charge coefficient, and the dielectric constant.     

Structure Evolution and Electrical Properties of Y3+‐Doped Ba1−xCaxZr0.07Ti0.93O3 Ceramics

Lead free piezoelectric ceramics of Y³⁺‐doped Ba_1?xCa_xZr_0.07Ti_0.93O₃ with x = 0.05, 0.10, and 0.15 were prepared. Composition and temperature‐dependent structural phase evolution and electrical properties of as‐prepared ceramics were studied systematically by X‐ray diffraction, Raman spectroscopy, impedance analyzer, ferroelectric test system, and unipolar strain measurement. Composition with x = 0.10 performs a good piezoelectric constant d₃₃ of 363 pC/N, coercive field E_c of 257 V/mm, remanent polarization P_r of 14.5 μC/cm², and a Curie temperature T_m of 109°C. High‐resolution X‐ray diffraction was introduced to indicate presence of orthorhombic phase. Converse piezoelectric constant d₃₃* of x = 0.10 composition performed better temperature stability in the range from 50°C to 110°C. That means decreasing orthorhombic–tetragonal phase transition temperature could be an effective way to enlarge its operating temperature range.     

Effect of BBS‐Based Frit on the Low Temperature Sintering and Electrical Properties of KNN Lead‐Free Piezoceramics

Using BaO–B₂O₃–SiO₂ (BBS)‐based frit as sintering aid, the K_0.49Na_0.51NbO₃ (KNN) + x wt% BBS (x = 1.0, 1.5, 2.0 and 2.5) lead‐free piezoelectric ceramics were successfully fabricated by solid‐state reaction method under low‐sintering temperature of 1000°C. The effect of BBS frit doping amount on the structure and electrical properties of the ceramics was investigated. The KNN ceramics with 1.5 wt% BBS frit showed optimal properties as follows: piezoelectric constant d₃₃ = 108 pC/N, planar electromechanical coupling coefficient k_p = 41%, mechanical quality factor Q_m = 225, relative dielectric constant ε_r = 410, dielectric loss tanδ = 0.57% and Curie temperature T_c = 400°C. This ceramic sample should be a good lead‐free candidate for actuators or high temperature sensors application due to its ultra‐low tanδ, relatively high Q_m and T_c.     

Large electric‐field‐induced strain and enhanced piezoelectric constant in CuO‐modified BiFeO3‐BaTiO3 ceramics

In this work, we fabricated the (1‐x)BiFeO₃‐xBaTiO₃+y‰ mol CuO ceramics by the modified thermal quenching technique. The pure perovskite phase was formed and a morphotropic phase boundary (MPB) was observed in the ceramics with x = 0.30‐0.33. The addition of CuO can significantly enhance the density of the BiFeO₃‐BaTiO₃ material. Importantly, an enhanced piezoelectric constant (d₃₃=165 pC/N), a large electric‐field‐induced strain (?S = 0.54%: peak to peak strain) and a large piezoelectric actuator constant (d₃₃*=449 pm/V) together with a high Curie temperature (T_C) of 503°C were observed in the ceramics with x = 0.30 and y = 5. As a result, the enhanced piezoelectricity and large electric‐field‐induced strain could significantly stimulate further researches in BFO‐based ceramics.     

Structural,Raman, and Dielectric Studies on Multiferroic Mn‐doped Bi1−xLaxFeO3 Ceramics

Multiferroic Bi_1?xLa_xFeO₃ [BLFO (x)] ceramics with x = 0.10–0.50 and Mn‐doped BLFO (x = 0.30) ceramics with different doping contents (0.1–1.0 mol%) were prepared by solid‐state reaction method. They were crystallized in a perovskite phase with rhombohedral symmetry. In the BLFO (x) system, a composition (x)‐driven structural transformation (R3c→C222) was observed at x = 0.30. The formation of Bi₂Fe₄O₉ impure phase was effectively suppressed with increasing the x value, and the rhombohedral distortion in the BLFO ceramics was decreased, leading to some Raman active modes disappeared. A significant red frequency shift (~13 cm^?1) of the Raman mode of 232 cm^?1 in the BLFO ceramics was observed, which strongly perceived a significant destabilization in the octahedral oxygen chains, and in turn affected the local FeO₆ octahedral environment. In the Mn‐doped BLFO (x = 0.30) ceramics, the intensity of the Raman mode near 628 cm^?1 was increased with increasing the Mn‐doping content, which was resulted from an enhanced local Jahn–Teller distortions of the (Mn,Fe)O₆ octahedra. Electron microscopy images revealed some changes in the ceramic grain sizes and their morphologies in the Mn‐doped samples at different contents. Wedge‐shaped 71° ferroelectric domains with domain walls lying on the {110} planes were observed in the BLFO (x = 0.30) ceramics, whereas in the 1.0 mol% Mn‐doped BLFO (x = 0.30) samples, 71° ferroelectric domains exhibited a parallel band‐shaped morphology with average domain width of 95 nm. Dielectric studies revealed that high dielectric loss of the BLFO (x = 0.30) ceramics was drastically reduced from 0.8 to 0.01 (measured @ 10⁴ Hz) via 1.0 mol% Mn‐doping. The underlying mechanisms can be understood by a charge disproportion between the Mn⁴⁺ and Fe²⁺ in the Mn‐doped samples, where a reaction of Mn⁴⁺ + Fe²⁺→Mn³⁺ + Fe³⁺ is taken place, resulting in the reduction in the oxygen vacancies and a suppression of the electron hopping from Fe³⁺ to Fe²⁺ ions effectively.     

Phase‐Composition‐Dependent Piezoelectric and Electromechanical Strain Properties in (Bi1/2Na1/2)TiO3–Ba(Ni1/2Nb1/2)O3 Lead‐Free Ceramics

New lead‐free perovskite solid solution ceramics of (1 ? x)(Bi_1/2Na_1/2)TiO₃–xBa(Ni_1/2Nb_1/2)O₃[(1?x)BNT–xBNN,x = 0.02–0.06) were prepared and their dielectric, ferroelectric, piezoelectric, and electromechanical properties were investigated as a function of the BNN content. The X‐ray diffraction results indicated that the addition of BNN has induced a morphotropic phase transformation from rhombohedral to pseudocubic symmetry approximately at x = 0.045, accompanying an evolution of dielectric relaxor behavior as characterized by enhanced dielectric diffuseness and frequency dispersion. In the proximity of the ferroelectric rhombohedral and pseudocubic phase coexistence zone, the x = 0.045 ceramics exhibited optimal piezoelectric and electromechanical coupling properties of d₃₃~121 pC/N and k_p~0.27 owing to decreased energy barriers for polarization switching. However, further addition of BNN could cause a decrease in freezing temperatures of polar nanoregions till the coexistence of nonergodic and ergodic relaxor phases occurred near room temperature, especially for the x = 0.05 sample which has negligible negative strains and thus show the maximum electrostrain of 0.3% under an external electric field of 7 kV/mm, but almost vanished piezoelectric properties. This was attributed to the fact that the induced long‐range ferroelectric order could reversibly switch back to its original ergodic state upon removal of external electric fields.     

Dielectric and Piezoelectric Properties of (1−x)K0.5Bi0.5TiO3–xBa(Ti0.8Zr0.2)O3 Ceramics

The properties of relaxor ceramics in the compositional series (1?x)K_0.5Bi_0.5TiO₃–xBa(Ti_0.8Zr_0.2)O₃ have been investigated. Values of T_m, the temperature of maximum relative permittivity, decreased from 380°C at x = 0.0 to below room temperature for x > 0.7. Compositions x = 0.1 and 0.2 were piezoelectric and ferroelectric. The maximum value of d₃₃ piezoelectric charge coefficient, 130 pC/N, and strain, 0.14%, occurred at x = 0.1. Piezoelectric properties of x = 0.1 were retained after thermal cycling from room temperature to 220°C, consistent with results from high‐temperature X‐ray diffraction indicating a transition to single‐phase cubic at ~300°C.     

Optical and Microwave Dielectric Properties of Zn‐Doped MgAl2O4 Transparent Ceramics Fabricated by Spark Plasma Sintering

(Mg_1?xZn_x)Al₂O₄ transparent ceramics were fabricated by spark plasma sintering technique at 1325°C for 10 min. A small mount of Zn²⁺ addition to MgAl₂O₄ ceramics was very effective to the performance improvement, while further increase in Zn‐doped content would give rise to the optical transmittance deterioration. The optical and microwave dielectric properties of MgAl₂O₄ transparent ceramics were improved by Zn substitution for Mg. The in‐line transmittance of the (Mg_1?xZn_x)Al₂O₄ (x = 0.02) ceramics can be as high as 70% at λ = 550 nm and 86.5% at λ = 2000 nm, respectively. The dielectric constant ε_r of (Mg_1?xZn_x)Al₂O₄ just varied from 8.32 to 8.54, however, the Q × f value increased significantly up to a maximal value of 66,000 GHz at x = 0.02. Moreover, the τ_f of (Mg_1?xZn_x)Al₂O₄ transparent ceramics changed from ?74 to ?65.5 ppm/°C. With the increasing of Zn‐doped content, the average grain size and the porosity increased, which was the primary reason for the change in optical and microwave dielectric properties.     

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb2O6‐doped K0.5Na0.5NbO3 lead‐free ceramics

Defect greatly affects the microscopic structure and electrical properties of perovskite piezoelectric ceramics, but the microscopic mechanism of defect‐driven macroscopic properties in the materials is not still completely comprehended. In this work, K_0.5Na_0.5NbO₃+x mol CuSb₂O₆ lead‐free piezoelectric ceramics were fabricated by a solid‐state reaction method and the defect‐driven evolution of piezoelectric and ferroelectric properties was studied. The addition of CuSb₂O₆ induces the formation of dimeric (DC1) and trimeric (DC2) defect dipoles. At low doping concentration of CuSb₂O₆ (0.5‐1.0 mol%), DC1 and DC2 coexist in the ceramics and harden the ceramics, inducing a constricted double P‐E loop and high Q_m of 895 at x=0.01. However, DC2 becomes more dominant in the ceramics with high concentration of CuSb₂O₆ (≥1.5 mol%) and thus leads to softening behavior of piezoelectricity and ferroelectricity as compared to the ceramic with x=0.01, giving a single slanted P‐E loop and relatively low Q_m of 206 at x=0.025. All ceramics exhibit relatively high d₃₃ of 106‐126 pC/N. Our study shows that the piezoelectricity and ferroelectricity of K_0.5Na_0.5NbO₃ ceramics can be tailored by controlling defect structure of the materials.     

High‐Pressure Behavior of Mullite: An X‐Ray Diffraction Investigation

Using synchrotron X‐ray diffraction and diamond anvil cells we performed in situ high‐pressure studies of mullite‐type phases of general formula Al_4+2xSi_2?2xO_10?x and differing in the amount of oxygen vacancies: 2:1‐mullite (x = 0.4), 3:2‐mullite (x = 0.25), and sillimanite (x = 0). The structural stability of 2:1‐mullite, 3:2‐mullite, and sillimanite was investigated up to 40.8, 27.3, and 44.6 GPa, respectively, in quasi‐hydrostatic conditions, at ambient temperature. This is the first report of a static high‐pressure investigation of Al₂O₃–SiO₂ mullites. It was found that oxygen vacancies play a significant role in the compression mechanisms of the mullites by decreasing the mechanical stability of the phases with the number of vacancies. Elevated pressure leads to an irreversible amorphization above ~20 GPa for 2:1‐mullite and above 22 GPa for 3:2‐mullite. In sillimanite, only a partial amorphization is observed above 30 GPa. Based on Rietveld structural refinements of high‐pressure X‐ray diffraction patterns, the pressure‐driven evolution of unit cell parameters is presented. The experimental bulk moduli obtained are as follows: K₀ = 162(7) GPa with K₀′ = 2.2(6) for 2:1‐mullite, K₀ = 173(7) GPa with K₀′ = 2.3(2) for 3:2‐mullite, K₀ = 167(7) GPa with K₀′ = 2.1(4) for sillimanite.     

Improved thermal stability of the piezoelectric properties of (Li,Ag)‐co‐modified (K,Na) NbO3‐based ceramics prepared by spark plasma sintering

High‐performance lead‐free piezoelectric ceramics 0.94(K_0.45Na_0.55)_1?xLi_x(Nb_0.85Ta_0.15)O₃–0.06AgNbO₃ (KNNLTAg‐x) were successfully prepared by spark plasma sintering technique. The doping effect of Li on the structural and electrical properties of KNNLTAg‐x (x=0, 0.02, 0.04, 0.06, 0.08 and 0.10) ceramics was studied. The lattice structure, ferroelectric and piezoelectric properties of the KNLNTAg‐x ceramics are highly dependent on the Li doping level. In particular, the Li dopant has a great impact on both Curie temperature T_c and orthorhombic‐tetragonal transition temperature T_O‐T. The 4% Li‐doped sample exhibited relatively high T_O‐T of 95°C, leading to a stable dynamic piezoelectric coefficient (d₃₃*) of 220‐240 pm/V in a broad temperature range from 25°C to 105°C. Additionally, the 2% Li‐doped sample shows a high d₃₃* of 320 pm/V at 135°C, suggesting its great potential for high‐temperature applications.     

Temperature‐insensitive piezoelectricity in lead‐free NaNbO3‐based ceramics

In this work, we report a lead‐free piezoelectric ceramic of (0.9‐x)NaNbO₃‐0.1BaTiO₃‐xBaZrO₃, and the effects of BaZrO₃ on the phase structure, microstructure, electrical properties and temperature stability are investigated. A morphotropic phase boundary‐like region consisting of rhombohedral (R) and tetragonal (T) phases is constructed in the compositions with x = 0.035‐0.04. More importantly, in situ temperature independence of the piezoelectric effect {piezoelectric constant (d₃₃) and strain} can be achieved below the Curie temperature (T_c). Intriguingly, the electric field‐induced strain is still observed at T ≥ T_c due to the combined actions of the electrostrictive effect and the electric field‐induced phase transition. We believe that NaNbO₃‐based ceramics of this type have potential for applications in actuators and sensors.     

Thermal stability and electric‐field‐induced strain behaviors for PIN‐PSN‐PT piezoelectric ceramics

Pb (In_1/2Nb_1/2) O₃‐Pb (Sc_1/2Nb_1/2) O₃‐PbTiO₃ (PIN‐PSN‐PT) ternary ceramics with compositions near morphotropic phase boundary (MPB) were fabricated by solid‐state‐sintering process. Dielectric and piezoelectric properties of xPIN‐yPSN‐zPT (x = 0.19, 0.23 and z = 0.365, 0.385) ceramics were investigated as a function of temperature, showing high T_r‐t and T_c on the order of 160 ~ 200°C and 280 ~ 290°C, respectively. The xPIN‐yPSN‐0.365PT (x = 0.19 and 0.23) ceramics do not depolarize at the temperature up to 200°C, showing a better thermal stability when compared to the state‐of‐the‐art relaxor‐PbTiO₃ systems. A slight variation (<9%) of k_p, k_t, and k₃₃ was observed in the temperature range of 25°C‐160°C for xPIN‐yPSN‐0.385PT (x = 0.19 and 0.23) ceramics. Rayleigh analysis was employed to quantify the contribution of domain wall motion to piezoelectric response, where the domain wall contribution was found to increase with composition approaching MPB for PIN‐PSN‐PT system.     

Phase coexistence and large piezoelectricity in BaTiO3‐CaSnO3 lead‐free ceramics

Ferroelectric phase coexistence was constructed in (1?x)BaTiO₃‐xCaSnO₃ lead‐free ceramics, and its relationship with the piezoelectricity of the materials was investigated to ascertain potential factors for strong piezoelectric response. It is found that the addition of CaSnO₃ caused a series of phase transitions in the (1?x)BaTiO₃‐xCaSnO₃ ceramics, and a ferroelectric coexistence of rhombohedral, orthorhombic, and tetragonal phases is formed at x = 0.08, where the ceramics exhibit the lowest energy barrier and consequently facilitate the polarization rotation and extension, resulting in the optimal piezoelectricity of d₃₃ and k_p values of 550 pC/N and 0.60, respectively. Our study provides an intuitive insight to understand the origin of high piezoelectricity in the ceramics with the coexistence of multiferroelectric phases.     

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb1−xBax)ZrO3 Ceramics

(Pb_1?xBa_x)ZrO₃ (x = 0, 0.025, 0.05, 0.075, 0.1) ceramics were synthesized by a traditional solid‐state reaction method, and the pure phase was obtained of all sintered samples. For all compositions, substitution of Pb²⁺ by Ba²⁺ reduced the phase transition temperature of antiferroelectric to ferroelectric and Curie temperature. Polarization–electric field hysteresis loops were conducted and typical ferroelectric hysteresis loops were observed in higher temperature range. Impedance and dielectric measurements were studied on the high temperature relaxation. Relaxation behavior could be suppressed after annealing treatment in oxygen atmosphere. Value of activation energy calculated from impedance was lower than that calculated from conduction measurements. It was concluded that short‐range hopping of oxygen vacancy contributes to the dielectric relaxation and long‐distance movement of doubly ionized oxygen vacancies contributes to the conduction.     

Structure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of BiFeO3‐BaTiO3‐Bi0.5Na0.5TiO3 Lead‐Free Multiferroic Ceramics

Lead‐free multiferroic ceramics of BiFeO₃‐BaTiO₃‐Bi_0.5Na_0.5TiO₃ have been prepared by a conventional ceramic technique. The microstructure, multiferroic, and piezoelectric properties of the ceramics have been studied. The ceramics sintered at 1000°C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and tetragonal phases is formed at x = 0.02. After the addition of Bi_0.5Na_0.5TiO₃, two dielectric anomalies are observed at high temperatures (T_m ~ 510°C–570°C and T₂ ~ 720°C). The phase transition around T_m becomes wider gradually with increasing x. The ferroelectricity, piezoelectricity, and ferromagnetism of the ceramics are significantly improved after the addition of Bi_0.5Na_0.5TiO₃. High resistivity (~1.3 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 27.4 μC/cm²), good piezoelectricity (d₃₃ =140 pC/N, k_p = 31.4%), and weak magnetic properties (M_r =0.19 emu/g) are observed.     

Temperature stability and electrical properties of MnO‐doped KNN‐based ceramics sintered in reducing atmosphere

Lead‐free MnO‐doped 0.955K_0.5Na_0.5NbO₃‐0.045Bi_0.5Na_0.5ZrO₃ (abbreviate as KNN‐0.045BNZ) ceramics have been prepared by a conventional solid‐state sintering method in reducing atmosphere. The MnO addition can suppress the emergence of the liquid phase and improve the homogenization of grain size. All ceramics sintered in reducing atmosphere show a two‐phase coexistence zone composed of rhombohedral (R) and tetragonal (T) phase. MnO dopant results in the content increase in R phase and slight increase in Curie temperature T_C. For KNN‐0.045BNZ ceramics, Mn²⁺ ions preferentially occupy the cation vacancies in A‐site to decrease oxygen vacancy concentration for 0.2%‐0.4% MnO content, whereas Mn²⁺ ions substitute for Zr⁴⁺ ions in B‐site to form oxygen vacancies at x ≥ 0.5. The defect dipole is formed at the moderate concentration from 0.5 to 0.6, which can provide a preserve force to improve the temperature stability of piezoelectric properties for k_p and . The Mn0.4 ceramics show excellent electrical properties with quasistatic piezoelectric constant d₃₃ = 300 pC/N, electromechanical coupling coefficient k_p = 51.2%, high field piezoelectric constant  = 430 pm/V (at E_max = 25 kV/cm) and T_C = ~345°C, insulation resistivity ρ  =  6.13 × 10¹¹ Ωcm.