添加TiO2对Mg4Nb2O9陶瓷的结构与性能的影响

Mg4Nb2O9具有与α-Al2O3相同的刚玉型晶体结构,可望成为新一代高Q、低ε基板材料.然而,该材料却具有很大的负谐振频率温度系数(τf=-7.05×10-5/℃),期望通过添加TiO2(τf=4.50×10-4/℃)以达到调整的目的.适量的添加TiO2将Mg4Nb2O9陶瓷的烧结温度降低了约100℃,并增强了陶瓷的性能,微波介电性能与其密度呈线性关系.由于添加的TiO2与Mg5Nb4O15反应形成了(Ng,Ti)5(Nb,Ti)4O15第二相,使得TiO2对该陶瓷τf值的调整作用不显著.1300℃、5h烧结添加质量分数为2.5%的TiO2的Mg4Nb2O9陶瓷具有最佳的性能:εr=13.61,Q·f=196620GHz,τf=-5.04×10-5/℃.     

Microstructures and Microwave Dielectric Properties of Bi2O3‐Deficient Bi12SiO20 Ceramics

The Microstructure and microwave dielectric properties of Bi₂O₃‐deficient Bi₁₂SiO₂₀ ceramics were investigated. A small amount of unreacted Bi₂O₃ phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi₂O₃ reacted with remnant SiO₂ during cooling to form a Bi₄Si₃O₁₂ secondary phase. The nominal composition of Bi_11.8SiO_19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: ε_r = 39, Q × f = 74 000 GHz, and τ_f = ?14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.     

Mg4(Mb2-xSbx)O9陶瓷的制备与微波介电性能

采用传统固相反应法制备了Mg4(Nb2-xSbx)O9陶瓷,研究了该材料的烧结性能、物相结构、显微组织和微波介电性能.X射线衍射结果显示,在x小于或等于1.6的范围内,形成了具有α-Al2O3刚玉型晶体结构的连续固溶体,晶轴长度和晶胞体积均随着锑含量的增加而降低.在x等于2.0时,Mg4Sb2O9的物相结构发生了变化,晶轴长度和晶胞体积也发生了突变.当0.4≤x≤O.8时,陶瓷的烧结温度从1400℃降低到了1300℃;而当x≥1.2后,陶瓷的烧结性能和微波介电性能均降低.在1300℃,5h的烧结条件下,Mg4(Nb1.6Sb0.4)O9陶瓷的微波介电常数(εr)为12.26,Q·f为168450 GHz.     

低温烧结Mg4Nb2O9微波介质陶瓷

研究了V2O5对Mg4Nb2O9陶瓷的烧结温度、相结构和微波介电性能的影响.结果表明,添加1％～8％的V2O5,能使该陶瓷的烧结温度降低到1000～1050℃而对其微波介电性能的影响很小,材料的主晶相为有序型刚玉结构的Mg4 Nb2O9,存在Mg4Nb2O6和Mg5Nb4O15杂相而没有检测到V2O5的存在.陶瓷的密度对微波介电性能起着决定性作用,介电常数e1与密度成线性关系(在99.99％的置信限内,其相关系数为0.98252),Q·f值与密度的关系较复杂.添加1％的v2O5,将Mg4Nb2O9陶瓷的烧结温度降低到了1050℃,得到了εr=12.72,Q·f=151040GHz的优异性能.     

V2O5掺杂对(Bi1.5Zn1.0Nb1.5)O7介质陶瓷性能的影响

采用传统的固相反应法制备陶瓷试样,借助XRD,SEM和LCR测试仪,研究了V2O5掺杂对(Bi1.5Zn1.0Nb1.5)O7介质陶瓷的烧结特性和介电性能的影响.结果表明,掺杂适量V2O5后试样的烧结温度明显降低,相结构仍为立方焦绿石单相,且具有良好的介电性能:介电常数(εr)为135～154,介电损耗(tan δ)为0.0033～0.0007,频率温度系数(τf)为-442～-387(2MHz).     

Nb2O5-Based Oxide Ceramics and Single Crystals-Investigation of Dielectric Properties

The behavior of enhancements of dielectric constant of Nb₂O₅ through small substituents of TiO₂ is of interest. The ceramics of these solid solutions were prepared by the conventional mixed oxide method. Single crystal fibers were grown by the Lase r-Heated Pedestal Growth (LHPG) technique, which is considered to be a powerful tool for rapid growth of high-melting temperature oxides and incongruent melting compositions. The dielectric properties as function of temperature (-180°C to 180°C) and frequency (1 KHz to 1 MHz) were measured. The direct-current (dc) electric field dependence of the dielectric constant has been studied. The results show the strong dielectric dispersion which exists in a large frequency range which implies that the relaxation process involved is not of a Debye type. A relaxation distribution can be therefore expected. The influence of the cluster size dispersion is one assumption. Thus, the data of dc bias field dependence of the dielectric constant has been analyzed by the modified Devonshire relation including a cluster term giving the fitted parameters: cluster sizes distribution and their polar cluster polarization.

^aOn leave from the Petroleum and Petrochemical College, Chulalongkorn University, Thailand.     

Bi3NbZrO9掺杂对BST电容器陶瓷介电性能的影响

采用传统固相烧结法,利用X-射线衍射仪(XRD)、扫描电镜(SEM)等方法系统研究了Bi3NbZrO9掺杂量对(Ba,Sr) TiO3(barium strontium titanate,BST)基电容器陶瓷介电性能和微观结构的影响.结果表明:Bi3NbZrO9掺杂没有改变BST陶瓷主晶相,随着掺杂量的增加会出现一些杂相.Bi3NbZrO9掺杂BST陶瓷具有小的介质损耗值,对材料居里峰的移动和展宽效应明显.Bi3NbZrO9掺杂量为lwt％时,烧结温度为1280℃,BST陶瓷具有较佳的介电性能:介电常数(εr) =2325,介质损耗(tanδ)=0.0048,耐压强度(Eb) =7.8 kV/mm(AC),-30 ～ 85℃温度范围内,容温变化率(△C/C)为-12.9％～ 14.3％.     

BiFeO3-SrBi2Nb2O9陶瓷的介电与铁电性能研究

用传统的固相反应法制备了单相层状钙钛矿结构的xBiFeO3-(1-x)SrBi2Nb2O9(x=0、0.05、0.1)的铁电陶瓷,并对其电学性能进行了研究。研究结果表明BiFeO3的掺入降低了SBN的烧结温度,陶瓷晶粒尺寸减小,致密度提高;介电性能得到了改善,居里温度和在居里点的介电常数提高;铁电性能恶化,耐压特性下降。     

Ba(Mg1/3Nb2/3)O3-Mg4Nb2O9复相陶瓷微波介电性能研究

采用传统固相法制备了(1?x)Ba(Mg1/3Nb2/3)O3?xMg4Nb2O9 [(1?x)BMN?xM4N2,x = 0.003 ~ 0.125] 微波介质陶瓷,研究了相结构、烧结性能与介电性能随 x 的变化规律。结果表明： BMN 与 M4N2 可以两相共存,且二者间存在有限固溶,BMN 的烧结温度及高温稳定性有所降 低。随着 x 的增大,介电常数 εr和谐振频率温度系数 τf逐渐减小,Q × f 值的变化易受到 BMN 有序参数 S 的影响,高度 1:2 有序的 x = 0.026 陶瓷获得了最大 Q × f 值 125000 GHz。综合来看, 在 1320°C 下保温 4 h 烧结的 x = 0.125 样品表现出最佳的微波介电性能：εr = 26.6,Q × f = 111000 GHz,τf = 5 ppm/ºC。     

Structure and Microwave Dielectric Properties of Low Firing Bi2Te2W3O16 Ceramics

Dense Bi₂Te₂W₃O₁₆ ceramics were prepared by the conventional solid‐state reaction route. X‐ray diffraction data show the room‐temperature (RT) crystal symmetry of Bi₂Te₂W₃O₁₆ to be well described by the centrosymmetric monoclinic C2/c space group [a = 21.280(5) Å, b = 5.5663(16) Å, c = 12.831(3) Å and β = 124.014(19)° and Z = 4]. Raman spectroscopy analyses are in broad agreement with space group assignment, but also revealed the presence of Bi₂W₂O₉ as a secondary phase. This phase is present as plate‐like grains embedded on a fine‐grained equiaxed matrix, as revealed by scanning electron microscopy. From the fitting of infrared reflectivity data the relative permittivity, ε_r, was estimated as 34.2, and the intrinsic quality factor, Q_u × f as 57 500 GHz. At RT and microwave frequencies, Bi₂Te₂W₃O₁₆ ceramics sintered at 720°C for 6 h exhibit ε_r ~ 34.5, Q_u × f = 3173 GHz (at 7.5 GHz), and temperature coefficient of resonant frequency, τ_f = ?92 ppm/°C. This shows a good agreement between the estimated and measured ε_r values, but also shows that, in principle, the dielectric losses of the ceramics are of extrinsic origin.     

Effects of ZnO and B2O3 on the Microstructure and Microwave Dielectric Properties of 5Li2O‐1Nb2O5‐5TiO2 Ceramics

The effects of ZnO and B₂O₃ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O‐1Nb₂O₅‐5TiO₂ (LNT) ceramics have been investigated. With addition of low‐level doping of ZnO and B₂O₃, the sintering temperature of the LNT ceramics can be lowered down to near 920°C due to the liquid phase effect. The Li₂TiO₃ss and the “M‐phase” are the two main phases, whereas other phase could be observed when co‐doping with ZnO and B₂O₃ in the ceramics. And the amount of the other phase increases with the ZnO content increasing. The addition of ZnO does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the good microwave dielectric properties of ε_r = 36.4, Q × f = 8835 GHz, τ_f = 4.4 ppm/°C could be obtained for the 1 wt% B₂O₃ and 4 wt% ZnO co‐doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as internal electrode.     

Effect of TiO2 Doping on the Structure and Microwave Dielectric Properties of Cordierite Ceramics

The (1?x)Mg₂Al₄Si₅O₁₈–xTiO₂ |(1?x)MAS‐xT| (0 ≤ x ≤ 0.35) cordierite ceramics are fabricated by solid‐state reaction method for obtaining near‐zero temperature coefficient of resonant frequency (τ_f). The XRD and SEM results show that (1?x)MAS‐xT (0 ≤ x ≤ 0.10) ceramics exhibit single cordierite solid solution, whereas as 0.15 ≤ x ≤ 0.35, present composite phases of Mg₂Al₄Si₅O₁₈ solution and TiO₂. Rietveld refinements of XRD data suggest that the [(Si₄Al₂)O₁₈] hexagonal shape in cordierite structure happens to alternate change from nonsymmetrical hexagonal rings to almost centrosymmetrical equilateral rings as x increases to 0.10 comparing to that of x = 0. As Ti⁴⁺ ions squeeze into the [(Si₄Al₂)O₁₈] rings structure, the orientation and shapes of the rings begin to rotate and expand from initial state of [1–20] (x = 0) to near [210] direction (x = 0.10), and then continue to expand toward close to [110] direction (x = 0.25). Due to centrosymmetry adjustment of [(Si₄Al₂)O₁₈] hexagonal rings and of other microstructure factors improvement, the (1?x)MAS‐xT (x = 0.10) cordierite solution achieves optimum quality factor Q_f: ε_r = 6.3, Q_f = 55 400 GHz (17.6 GHz), τ_f = ?21 ppm/°C. The (1?x)MAS‐xT (x = 0.25) composites obtain a near‐zero temperature coefficient of resonance frequency: ε_r = 6.8, Q_f = 37 800 GHz (18.4 GHz), τ_f = ?0.2 ppm/°C.     

(Mg4-xLi2x)(Nb1.92V0.08)O9陶瓷微波介电性能

采用固相合成法制备了(Mg_(4-x)Li_(2x))(Nb_(1.92)V_(0.08))O_9系列微波介质陶瓷。通过XRD、SEM以及HP网络分析仪等测试手段对其烧结特性、晶体结构和微波介电性能进行了系统研究。结果表明:x<0.3时形成了(Mg_(4-x)Li_(2x))(Nb_(1.92)V_(0.08))O_9固溶体;x≥0.3时,除主相(Mg_(4-x)Li_(2x))(Nb_(1.92)V_(0.08))O_9外,还有少量第二相Li3Mg2NbO6生成。微波介电常数ε随x的增大持续升高,品质因数Q则先增大后减小。x=0.2,950℃,5h烧结样品的微波介电性能达到最佳:ε=12.7,Q.f=14078GHz(f0=8GHz)。     

Ta_2O_5掺杂Bi_2O_3–ZnO–Nb_2O_5陶瓷的晶体结构、结晶化学及介电性能

采用固相反应法制备Bi1.5ZnNb1.5–xTaxO7陶瓷,研究了不同掺杂量Ta2O5对Bi2O3–ZnO–Nb2O5陶瓷相结构、晶体化学特性和介电性能的影响。结果表明:当x≤0.1时,样品均保持单一的立方焦绿石结构(α–BZN)。通过对样品结晶化学计算发现,随着Ta2O5掺杂量的增加,晶格常数a逐渐减小,结晶化学参数键价和AV(O')[A4]增大,AV(O)[A2B2]减小,48f(O)坐标ξ增加。在组成样品晶体结构的多面体中,由6个48f(O)组成的八面体结构(BO6)逐渐变得扭曲,而6个48f(O)和2个8b(O')组成的六面体结构逐渐变得规则,向正立方体结构变化。室温下样品的介电常数和损耗随Ta2O5掺杂量的增加而减小,弛豫度逐渐减小。     

微波介质陶瓷的显微结构与性能

本介绍了显微结构中的一些主要因素对微波介质陶瓷性能的影响；重点分析了晶粒-主晶相、玻璃相、气孔以及缺陷对微波介质陶瓷性能的影响；通过选择适当的工艺方法，如掺杂、湿化学合成方法等，实现陶瓷结构的致密、均匀，从而提高陶瓷体的微波性能。     

Ni替代Nb对Bi1.5ZnNb1.5O7陶瓷介电性能的影响

以分析纯级原料,按照一定比例混合,利用固相反应制备Bi1.5ZnNb1.5O7陶瓷.研究结果表明:Ni掺杂样品能够有效地降低烧结温度至960℃;样品相结构保持立方焦绿石相;随着Ni3+替代量的增加,介质材料的介电常数及介电损耗逐渐增大;在-195～150℃的温度范围内,介电常数存在明显的弛豫现象,随Ni3+的掺杂量增加,逐渐向高温方向移动,在1 MHz下其峰值温度为:-98.1℃,-97.7℃,-97.1℃,-94.2℃.     

掺杂V2O5对MgNb2O6介电陶瓷工艺和性能的影响

本文采用固相反应法常压烧结制备MgNb2O6粉末,研究了添加不同质量分数的V2O5对MgNb2O6微波介电陶瓷的烧结工艺和介电性能的影响。并运用XRD、SEM和LCR对试样显微组织和性能进行了分析。结果表明:添加一定量的V2O5能够有效地降低MgNb2O6介电陶瓷的烧结温度,提高试样的致密度、频率温度系数及介电常数。当V2O5添加量为1.0wt%,且在1175℃烧结条件下获得的MgNb2O6陶瓷性能最佳,其性能参数分别为:εr=28,tanδ=0.00361,τf=54.64ppm·℃-1。     

Al2O3陶瓷微波介电性能的研究与进展

近年来随着微波通讯技术与微波集成电路(microwave integrate circuits,MICs)的发展,用于移动通讯、智能运输系统(Intelligent transport system,ITS)、GPS天线的低介电常数低介电损耗的微波介质陶瓷引起了广泛的关注,其中最具代表性的即为Al2O3陶瓷.本文总结了近几年Al2O3陶瓷微波介电性能的研究情况,系统介绍了Al2O3陶瓷微波介电性能的影响因素和目前研究的Al2O3陶瓷体系,希望对于研究Al2O3陶瓷的微波介电性能提供有益的参考,使其在微波通讯等方面得到更广泛的应用.     

MgO/MgF2掺杂对Al2O3陶瓷烧结、显微结构及微波介电性能的影响

采用搅拌混合法和无压烧结工艺,制备了Mg2+浓度为500 ppm的MgO掺杂和MgF2掺杂的Al2O3陶瓷,系统地研究了MgO和MgF2掺杂对Al2O3陶瓷致密化、显微结构和微波介电性能的影响.研究结果表明:与MgO掺杂相比,MgF2掺杂在较高温度下能更加有效地促进Al2O3陶瓷的致密化.在1550℃烧结条件下,MgF2掺杂的Al2O3陶瓷比MgO掺杂的Al2O3陶瓷的晶粒更大,同时介电常数也更高.但另一方面,MgF2掺杂的Al2O3陶瓷介电损耗也远比MgO掺杂的Al2O3陶瓷要高.同时简单分析了造成此现象的原因.     

掺杂玻璃助剂的Ba5Nb4O15陶瓷烧结特性及介电性能

引入玻璃烧结助剂,采用液相烧结手段制备了低温烧结Ba5Nb4O15微波介质陶瓷.采用X射线衍射和扫描电子显微技术分析了陶瓷的物相组成和微观形貌.研究表明:陶瓷主晶相为Ba5Nb4O15,铋硅酸盐玻璃在陶瓷中以液相形式存在,促使陶瓷烧结温度从1300℃降至1100℃.添加4wt.％铋硅酸盐玻璃的Ba5Nb4O15陶瓷在1100℃烧结,具有良好的微波性能:相对介电常数εr=39.01,品质因子Q × f=12214GHz.