Thermodynamic calculations on the chemical vapor deposition of Si–C–N from the SiCl4–NH3–C3H6–H2–Ar system

Based on the Gibbs free energy minimum principle and Factsage software, the thermodynamic phase diagram for the SiCl₄–NH₃–C₃H₆–H₂–Ar system was calculated. The effects of temperature, dilution ratio of H₂, total pressure on product types and distribution regions of reacted solid products were discussed. The results show that: (1) The area of SiC–Si₃N₄ increases at first, then decreases with the rising of temperature and reaches the maximum value at 1273.15 K. (2) The ratio of C/Si is the main factor for the deposition of SiC in the double phase of SiC–Si₃N₄. (3) The preferred deposition conditions of Si₃N₄ are: T=1173.15 K, H₂:SiCl₄=10:1, and P_Total=0.01 atm. Taking the deposition of SiC into consideration, the deposition of Si₃N₄ influences the formation of Si–C–N directly. (4) According to the influencing factors of depositing SiC and Si₃N₄, the suitable parameter for Si–C–N deposition can be determined. (5) Through the experimental verification, it can be demonstrated that Si–C–N can be obtained by low-pressure chemical vapor deposition (CVD), its product being amorphous and mainly constituted by Si–N and Si–C bonds. The obtained Si–C–N ceramics can transform to α-Si₃N₄ and SiC nano-crystal when heat-treated at 1773.15 K in N₂ for 2 h.     

Silicon nitridation mechanism in reaction‐bonded Si3N4–SiC and Si3N4‐bonded ferrosilicon nitride

Reaction‐bonded Si₃N₄–SiC and Si₃N₄‐bonded ferrosilicon nitride, with Si powder, SiC particles and Fe₃Si–Si₃N₄ particles as raw materials, respectively, are prepared in flame‐isolation nitridation shuttle kiln with flowing N₂ at 1723K. There is columnar β‐Si₃N₄ in both Si₃N₄–SiC and Si₃N₄‐bonded ferrosilicon nitride. However, fibrous α‐Si₃N₄ is only observed in Si₃N₄–SiC and Si₃N₄‐bonded ferrosilicon nitride contains much more Si₂N₂O than Si₃N₄–SiC. By analyzing the oxidation thermodynamics of Si and Si₃N₄, it is known that in the process of producing Si₃N₄–SiC, Si is oxidized first to gaseous SiO and fibrous α‐Si₃N₄ is generated with SiO and N₂. The existence of SiO is the reason of low silicon nitridation rate. But in the process of producing Si₃N₄‐bonded ferrosilicon nitride, Si₃N₄ is easier to be oxidized than Si and Si₂N₂O is generated on the surface of Si₃N₄ hexagonal prisms in ferrosilicon nitride particles. Meanwhile, Si in raw materials forms new ferrosilicon alloys with Fe₃Si, which decreases the temperature of liquid appearance and blocks some open pores in the samples, which stops the matter loss of nitridation. Liquid ferrosilicon alloys favors β‐Si₃N₄ generation from Si direct nitridation and fibrous α‐Si₃N₄ transformation, which used to exist in ferrosilicon nitride raw materials.     

Crystallization Mechanism of CVD Si3N4–SiCN Composite Ceramics Annealed in N2 Atmosphere and Their Excellent EMW Absorption Properties

To tailor a new electromagnetic wave (EMW) absorbing material with lower reflection coefficient (RC) and larger operating frequency band, the CVD Si₃N₄–SiCN composite ceramics were prepared from SiCl₄–NH₃–C₃H₆–H₂–Ar system and then annealed at the temperatures of 1400–1700°C in N₂ atmosphere. Effect of the annealing temperatures on the microstructure, phase composition, permittivity, and microwave‐absorbing properties of the ceramic were investigated. Results showed that the CVD Si₃N₄–SiCN ceramics gradually crystallized into nanosized SiC grains, Si₃N₄ grains and graphite (T ≤ 1600°C), and then the grains grew up at T = 1700°C. The permittivity, dielectric loss, and electrical conductivity of as‐annealed CVD Si₃N₄–SiCN ceramics (T ≤ 1600°C) increased firstly due to the formation of conductivity and polarity network and the increase in nanograin boundary, and then decreased at 1700°C because of the growth of nanograins and the disappearance of nanograin boundary. The minimal RC and effective absorption bandwidth of the as‐annealed CVD Si₃N₄–SiCN ceramic at 1600°C was ?41.67 dB at the thickness of 2.55 mm and 3.95 GHz at the thickness of 3.05 mm, respectively, demonstrating that the totally crystallized CVD Si₃N₄–SiCN ceramic (T = 1600°C) had the superior microwave‐absorbing ability.     

Equiaxed β–Si3N4 ceramics prepared by rapid reaction‐bonding and post‐sintering using TiO2–Y2O3–Al2O3 additives

Sintered reaction‐bonded Si₃N₄ ceramics with equiaxed microstructure were prepared with TiO₂–Y₂O₃–Al₂O₃ additions by rapid nitridation at 1400°C for 2 hours and subsequent post‐sintering at 1850°C for 2 hours under N₂ pressure of 3 MPa. It was found that α–Si₃N₄, β–Si₃N₄, Si₂N₂O, and TiN phases were formed by rapid nitridation of Si powders with single TiO₂ additives. However, the combination of TiO₂ and Y₂O₃–Al₂O₃ additives led to the formation of 100% β–Si₃N₄ phase from the nitridation of Si powders at such low temperature (1400°C), and the removal of Si₂N₂O phase. As a result, dense β–Si₃N₄ ceramics with equiaxed microstructure were obtained after post‐sintering at high temperature.     

Si/B/C/N/Al precursor-derived ceramics: Synthesis,high temperature behaviour and oxidation resistance

The Si/B/C/N/H polymer T2(1), [B(C₂H₄Si(CH₃)NH)₃]_n, was reacted with different amounts of H₃Al·NMe₃ to produce three organometallic precursors for Si/B/C/N/Al ceramics. These precursors were transformed into ceramic materials by thermolysis at 1400 °C. The ceramic yield varied from 63% for the Al-poor polymer (3.6 wt.% Al) to 71% for the Al-rich precursor (9.2 wt.% Al). The as-thermolysed ceramics contained nano-sized SiC crystals. Heat treatment at 1800 °C led to the formation of a microstructure composed of crystalline SiC, Si₃N₄, AlN(+SiC) and a BNC_x phase. At 2000 °C, nitrogen-containing phases (partly) decomposed in a nitrogen or argon atmosphere. The high temperature stability was not clearly related to the aluminium concentration within the samples. The oxidation behaviour was analysed at 1100, 1300, and 1500 °C. The addition of aluminium significantly improved the oxide scale quality with respect to adhesion, cracking and bubble formation compared to Al-free Si(/B)/C/N ceramics. Scale growth rates on Si/B/C/N/Al ceramics at 1500 °C were comparable with CVD–SiC and CVD–Si₃N₄, which makes these materials promising candidates for high-temperature applications in oxidizing environments.     

A Novel Si3N4–SiC Ceramic Used for Volumetric Receivers

Si₃N₄–SiC composite ceramics used for volumetric receivers were fabricated by pressureless sintering of micrometer SiC, Si₃N₄, andalusite, and other minor additions powders. Mechanical, thermal expansion, thermal conductivity, and thermal shock resistance properties were tested at different sintering temperatures. The best sintering temperature of optimum formula A2 is 1360°C, and the bending strength reaches 79.60 Mpa. And moreover, its thermal expansion coefficient is 6.401 × 10^?6/°C, thermal conductivity is 7.83 W/(m K), and no crack occurs even subjected to 30 cycles thermal shock with a bending strength increase rate of 4.72%. X‐ray diffraction results show that the phase constituents of the sintered products mainly consist of SiC, Si₃N₄, mullite, and quartz. Microstructure that is most appropriate and exhibits maximal thermal shock resistance was detected using SEM. The porosity of Si₃N₄–SiC ceramic foam prepared from formula A2 is 95%, which provides a rapid and steady action for the receiver. The evaluation of the present foam shows that Si₃N₄–SiC ceramic composite is a good candidate for volumetric receivers.     

Theoretical Study on the Relationship Between Crystal Chemistry and Properties of Quaternary Y–Si–O–N Oxynitrides

Y–Si–O–N quaternary oxynitrides (Y₅Si₃O₁₂N, Y₄Si₂O₇N₂, YSiO₂N, Y₂Si₃O₃N₄, and Y₃Si₅ON₉) are recognized as important secondary grain‐boundary phases in silicon nitride and believed to have important impacts on the high‐temperature mechanical properties and thermal conductivity of Si₃N₄ ceramic. In this work, equilibrium crystal structures, theoretical mechanical properties (second‐order elastic constants, polycrystalline bulk modulus, shear modulus, Young's modulus, and Vickers hardness) of the five quaternary phases are calculated using first‐principle total energy calculations. Meanwhile, temperature dependence of thermal conductivities of all five compounds is obtained based on Debye–Clarke model and Slack equation. On the basis of theoretical prediction, we establish the relationship between the componential (cation/anion or cation/cation ratios) and structural characteristics (bonding configurations) and mechanical/thermal properties. Our results are expected to provide helpful guidelines to improve the performances of Y–Si–O–N ceramics, and further guide the optimization of mechanical and thermal properties of Si₃N₄ by properly tailoring the secondary grain‐boundary phases.     

Influence of SiC particle addition on the nucleation density and adhesion strength of MPCVD diamond coatings on Si3N4 substrates

It is generally accepted that SiC layers are often involved in the adhesion efficiency of chemical vapour deposition (CVD) diamond films on Si-containing substrates. Si₃N₄–SiC composite substrates with different amounts of SiC particles (0–50 wt%) were then used for diamond deposition. Samples were produced by pressureless sintering (1750°C, N₂ atmosphere, 2–4 h). The diamond films were grown on a commercial MPCVD reactor using H₂/CH₄ mixtures. Despite there being no special substrate pre-treatment, the films were densely nucleated when SiC was added (N_d≈1×10¹⁰ cm⁻²) with primary nanosized (∼100 nm) particles, followed by a less dense (N_d≈1×10⁶ cm⁻²) secondary nucleation. Indentation experiments with a Brale tip of up to 588 N applied load corroborated the benefit of SiC inclusion for a strong adhesion. The low thermal expansion coefficient mismatch between Si₃N₄ and diamond resulted in very low compressive stresses in the film, as proved by micro-Raman spectroscopy.     

Fabrication and Characterization of In Situ Porous Si3N4‐Si2N2O‐BN Ceramic

Porous Si₃N₄‐Si₂N₂O‐BN ceramic was fabricated at 1750°C using Si₃N₄, BN, and (NH₄)₂HPO₄ as starting materials. During the sintering process, oxygen from the decomposed products of (NH₄)₂HPO₄ would bond Si and N in the liquid phase to form Si₂N₂O. The microstructure and properties of the porous ceramics were investigated. With the (NH₄)₂HPO₄ content varied from 10 to 50 vol.%, porosity of the porous Si₃N₄‐Si₂N₂O‐BN ceramic increased from 43.5% to 51%. The microstructure, mechanical, and dielectric properties was well controlled by adjusting (NH₄)₂HPO₄ contents. The present technique offers a more simple way of synthesizing porous Si₃N₄‐Si₂N₂O‐BN ceramics.     

Combined effect of Fe-Si alloys and carbon on Si3N4 stability at elevated temperatures

The combined effect of carbon and Fe-Si alloys on Si₃N₄ was explored by heat treating Si₃N₄ materials at 1500?°C and 1600?°C in flowing nitrogen. The phase compositions and microstructures were characterized by XRD and SEM, respectively. The reaction degree was analysed based on the mass variation in the system. Combined with a thermodynamic assessment, the reaction mechanism was studied and proposed. The results show that the coexistence of Fe-Si alloys and carbon accelerates the phase transformation from Si₃N₄ to SiC and worsens the strength of Si₃N₄ materials. Fe-Si alloys accelerate the deposition of CO gas to free carbon and accelerate the decomposition of Si₃N₄ to Si. The in situ-formed Si can react with carbon, thus accelerating the thermodynamic and kinetic formation of SiC. Along with the growth of pores and the deterioration of the wettability of Fe-Si alloys during this process, the microstructure changes from a network constituted by Si₃N₄ columns/whiskers to porous SiC particles with weak linkages, which leads to the failure of Si₃N₄ materials. Therefore, the combined effect of Fe-Si alloys and carbon is harmful for Si₃N₄ materials at 1500–1600?°C.     

Synthesis and growth mechanism of single crystal β‐Si3N4 particles with a quasi‐spherical morphology

Single‐crystal β‐Si₃N₄ particles with a quasi‐spherical morphology were synthesized via an efficient carbothermal reduction‐nitridation (CRN) strategy. The β‐Si₃N₄ particles synthesized under an N₂ pressure of 0.3 MPa, at 1450°C and with 10 mol% unique CaF₂ additives showed good dispersity and an average size of about 650 nm. X‐ray photoelectron spectroscopy analysis revealed that there was no SiC or Si–C–N compounds in the β‐Si₃N₄ products. Selected‐area electron‐diffraction pattern and high‐resolution image indicated single crystalline structure of the typical β‐Si₃N₄ particles without an obvious amorphous oxidation layer on the surface. The growth mechanism of the quasi‐spherical β‐Si₃N₄ particles was proposed based on the transmission electron microscopy and energy dispersive X‐ray spectroscopy characterization, which was helpful for controllable synthesis of β‐Si₃N₄ particles by CRN method. Owing to the quasi‐spherical morphology, good dispersity, high purity, and single‐crystal structure, the submicro‐sized β‐Si₃N₄ particles were promising fillers for preparing resin‐based composites with high thermal conductivity.     

Effect of Fe‐Contained Species on the Preparation of α‐Si3N4 Fibers in Combustion Synthesis

Herein, Si₃N₄ powders of comparatively high α‐phase but with distinct morphologies, especially α‐Si₃N₄ fibers, were successfully prepared by a developed combustion synthesis (CS) strategy. Different proportions of Fe and Fe₂O₃ were innovatively doped in reactants as additives to control the phase constitution and their relative percentage, as well as morphologies of final microstructures. One step further, the effects of Fe‐contained impurities on the CS process were rationally proposed and verified based on a series of meticulous designed experiments. It turns out that two contradictory effects of metal Fe on the formation of α‐Si₃N₄ synergistically play vital roles in the CS reaction. The existence of metal Fe can accelerate the crystallization of the amorphous SiO₂, which act as protection layer outside the Si powders and subsequently promote the generation of gaseous SiO. These gaseous SiO easily reacts with N₂ and eventually form α‐Si₃N₄. On the other hand, the formation of β‐Si₃N₄ will be promoted by the assistance of some liquid phases, and in this case, they mainly come from the reaction between Fe and Si. For this study, when the content of doped Fe is below 2 mol%, the prior effect on promoting α‐phase content is pronounced. Otherwise, the latter dominates the CS process as the content of Fe additive is further increased above 2 mol%. In a different way, Fe₂O₃ mainly encourages the formation of β phase through the large amount of newly generated liquid phases, although the reduced SiO₂ and Fe may still promote the α/β ratio on some extent.     

Porous Si3N4/SiC Ceramics Prepared via Nitridation of Si Powder with SiC Addition

Porous Si₃N₄/SiC ceramics with high porosity were prepared via nitridation of Si powder, using SiC as the second phase and Y₂O₃ as sintering additive. With increasing SiC addition, porous Si₃N₄/SiC ceramics showed high porosity, low flexural strength, and decreased grain size. However, the sample with 20wt% SiC addition showed highest flexural strength and lowest porosity. Porous Si₃N₄/SiC ceramics with a porosity of 36–45% and a flexural strength of 107‐46MPa were obtained. The linear shrinkage of all porous Si₃N₄/SiC ceramics is below 0.42%. This study reveals that the nitridation route is a promising way to prepare porous Si₃N₄/SiC ceramics with favorable flexural strength, high porosity, and low linear shrinkage.     

SiC14-CH4-H2系统沉积碳化硅动力学与微结构

Silicon carbide was prepared from SiCl4-CH4-H2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900°C to 1100°C. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 and SiCl2 formed from decomposition of SiCl4 and CH4 contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ•mol－1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble struc-tures, which varied with substrate length and CVD temperature.     

Preparation and characterization of porous Si3N4-bonded SiC ceramics and morphology change mechanism of Si3N4 whiskers

Porous Si₃N₄-bonded SiC ceramics with high porosity were prepared by the reaction-sintering method. In this process, Si₃N₄ was synthesized by the nitridation of silicon powder. The X-ray diffraction (XRD) indicated that the main phases of the porous Si₃N₄-bonded SiC ceramics were SiC, α-Si₃N₄, and β-Si₃N₄, respectively. The contents of β-Si₃N₄ were increased following the sintering temperature. The morphology of Si₃N₄ whiskers was investigated by scanning electron microscope (SEM), which was shown that the needle-like (low sintering-temperature) and rod-like (higher sintering-temperature) whiskers were formed, respectively. From low to high synthesized temperature, the highest porosity of the porous Si₃N₄ bonded SiC ceramic was up to 46.7%, and the bending strength was ~11.6?MPa. The α-Si₃N₄ whiskers were derived from the reaction between N₂ and Si powders, the growth mechanism was proved by Vapor–Solid (VS). Meanwhile, the growth mechanism of β-Si₃N₄ was in accordance with Vapor–Solid–Liquid (VSL) growth mechanism. With the increase of sintering temperature, Si powders were melted to liquid silicon and the α-Si₃N₄ was dissolved into the liquid then the β-Si₃N₄ was precipitated successfully.     

Crystal Growth in the Combustion Synthesis of α‐Si3N4 Using Si with Different Particle Sizes

In this present work, Si₃N₄ powders with high α‐phase contents and distinct crystal morphologies were prepared via a promising approach of combustion synthesis (CS), using Si powders with different particle sizes as reactants. The influence of Si particle size on phase composition and crystal morphologies in the products was systematically investigated. Two unique crystal morphologies, radial‐spheroidal‐cluster and flowerlike, were observed in the Si₃N₄ products. The crystal growth mechanisms of Si₃N₄ granules in the CS system with disparate Si have been proposed based on experiments and thermokinetic calculations. As conclusion, the α‐phase content in the final product was synergetically dominated by the vaporization process of Si particles and the α–β phase transformation of Si₃N₄ during the after‐burn period. Si₃N₄ powders with high α‐phase content can be obtained from Si powders with an appropriate particle size.     

A novel method to synthesize pure-phase Si2N2O powders in a fluidized bed reactor

Si₂N₂O ceramic, an emerging functional and structural material, has a wide range of applications. However, the preparation of pure-phase Si₂N₂O powder remains challenging due to the mass transfer resistance and undesirable side reactions in the conventional methods. Herein, a novel molecular approach combined with the decomposition process has been developed to synthesize pure-phase Si₂N₂O powders. The hydrated Si(NH)₂ precursors were synthesized through the chemical vapor deposition (CVD) of SiCl₄, NH_3, and humidified N₂ in a fluidized bed reactor (FBR) in two steps. Then, the hydrated Si(NH)₂ precursors were decomposed into amorphous and subsequently transformed into crystalline powders under different temperatures and time. It was found that the molar ratio of N/O of the hydrolyzed Si(NH)₂ can be controlled by N₂ ventilation time and played an important role in synthesizing high pure Si₂N₂O powder. When it varied from 2.5:1 to 2:1, pure-phase Si₂N₂O powder was obtained after heat treatment at 1300–1500 °C, which features a big tolerance for N/O ratios. This newly developed method offered a chance for the preparation of high-quality Si₂N₂O powder with high efficiency and low cost.     

Selective laser reaction synthesis of SiC,Si3N4 and HfC/SiC composites for additive manufacturing

Selective laser reaction sintering techniques (SLRS) techniques were investigated for the production of near net-shape non-oxide ceramics including SiC, Si₃N₄, and HfC/SiC composites that might be compatible with prevailing powder bed fusion additive manufacturing processes. Reaction bonded layers of covalent ceramics were produced using in-situ reactions that occur during selective laser processing and layer formation. During SLRS, precursor materials composed of metal and/or metal oxide powders were fashioned into powder beds for conversion to non-oxide ceramic layers. Laser-processing was used to initiate simultaneous chemical conversion and local interparticle bonding of precursor particles in 100 vol% CH₄ or NH₃ gases. Several factors related to the reaction synthesis process—precursor chemistry, gas-solid and gas-liquid synthesis mechanisms, precursor vapor pressures—were investigated in relation to resulting microstructures and non-oxide yields. Results indicated that the volumetric changes which occurred during in-situ conversion of single component precursors negatively impacted the surface layer microstructure. To circumvent the internal stresses and cracking that accompanied the conversion of Si or Hf (that expands upon conversion) or SiO_x (that contracts during conversion), optimized ratios of the precursor constituents were used to produce near isovolumetric conversion to the product phase. Phase characterization indicated that precipitation of SiC from the Si/SiO₂ melt formed continuous, crack-free, and dense layers of 93.7 wt% SiC that were approximately 35 µm thick_, while sintered HfC/SiC composites (84.2 wt% yield) were produced from the laser-processing of Hf/SiO₂ in CH₄. By contrast, the SLRS of Si/SiO_x precursor materials used to produce Si₃N₄ resulted in whisker formation and materials vaporization due to the high temperatures required for conversion. The results demonstrate that under appropriate processing conditions and precursor selection, the formation of near net-shape SiC and SiC composites might be achieved through single-step AM-compatible techniques.     

Synthesis of Si3N4–TiN–SiC composites by combustion reaction under high nitrogen pressures

Si₃N₄–TiN–SiC composites were synthesized from TiSi₂ and SiC mixtures via the combustion reaction under high nitrogen pressure. The nitridation mechanism of TiSi₂ was analyzed. The results show that the nitridation of TiSi₂ produced TiN and Si firstly, and Si₃N₄ phase was formed by the further nitriding of Si. The molten eutectic phase and its agglomeration between Si and TiSi₂ formed one core-shell structure and affected the nitridation process. Under higher nitrogen pressure, the nitridation reaction was complete and the relatively dense Si₃N₄–TiN–SiC composites obtained. TEM observation revealed inhomogeneous Si₃N₄ grain size, amorphous phase, cavities, microcracks and dislocations, and graphite from the nitridation of SiC in the microstructure.