Ultrafast high-temperature sintering of dense and textured alumina

Crystallographic texture engineering in ceramics is essential to achieve direction-specific properties. Current texture engineering methods are time-consuming, energy extensive, or can lead to unnecessary diffusion of added dopants. Herein, we explore ultrafast high-temperature sintering (UHS) to prepare dense and textured alumina using templated grain growth (TGG). From a slurry containing alumina microplatelets coated with Fe₃O₄ nanoparticles dispersed in a matrix of alumina nanoparticles, green bodies with oriented microplatelets were prepared using magnetic assisted slip casting (MASC). The effects of the sintering temperature, time and heating rate on the density and microstructure of the obtained ceramics were then studied. We found that TGG occurs for a temperature range between 1640 and 1780 °C and 10 s sintering time. Sintering at 1700 °C for 10 s led to dense and textured alumina with anisotropic grains thanks to the Fe₃O₄ coating, which did not have the time to diffuse. The highest texture and relative density were obtained with a heating rate of ~5500 °C/min, leading to texture-dependent anisotropic mechanical properties. This study opens new avenues for fabricating textured ceramics in ultra-short times.     

Tailoring particle alignment and grain orientation during tape casting and templated grain growth

The quality of crystallographic alignment in textured ceramics produced by tape casting and templated grain growth (TGG) has been little studied despite its demonstrated impact on magnetic, piezoelectric, and optical properties. Physical and crystallographic alignment of anisotropic template particles is shown to be directly linked to the casting rate, gap height, and casting viscosity during tape casting. These parameters are shown to affect the shape and magnitude of the shear rate profile under the doctor blade during casting which in turn causes a gradient in the torque acting on anisotropic particles. The magnitude of the torque, the time the slurry is exposed to torque during casting, and the ratio of casting height to template diameter are demonstrated to enable the particle alignment process to be tailored to produce well-aligned template particles. Crystallographic alignment of the textured ceramic was quantified by grain misalignment angle (full width at half maximum, FWHM) and degree of orientation (r) and is directly correlated with the degree of torque during casting. High-quality alignment (FWHM = 4.5°; r = 0.13) was demonstrated in the model TGG system consisting of submicrometer alumina and 5 vol% 11 μm diameter template platelet particles.     

Fabrication of textured Sr2Na0.9K0.1Nb5O15 ceramics: Anisotropy in structures and electrical properties

Highly textured Sr₂Na_0.9K_0.1Nb₅O₁₅ (SKNN) ceramics were fabricated by reactive templated grain growth method using acicular Sr₂KNb₅O₁₅ (SKN) templates. CuO (1 wt.%) was used as sintering additive. SKN templates were aligned in matrix powders of SrNb₂O₆ and NaNbO₃ via tape casting and sintered at higher temperatures to obtain texture morphology. Through carefully controlling the processing conditions, a texture fraction of 86% was obtained. The structure evolution was explained by liquid-phase-assisted growth mechanism, in which the whole process was divided into 3 steps according to priority: phase formation stage, densification stage, and texture development stage. The textured ceramics exhibited anisotropic properties with the highest electrical properties obtained in c-axis direction: ?_r = 2212, ?_m = 4869, P_r = 15.92 μC cm^?2 and d₃₃ = 82 pC N^?1, showing that reactive templated grain growth method is very effective to improve the physical properties of SKNN ceramics.     

Structure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of BiFeO3‐BaTiO3‐Bi0.5Na0.5TiO3 Lead‐Free Multiferroic Ceramics

Lead‐free multiferroic ceramics of BiFeO₃‐BaTiO₃‐Bi_0.5Na_0.5TiO₃ have been prepared by a conventional ceramic technique. The microstructure, multiferroic, and piezoelectric properties of the ceramics have been studied. The ceramics sintered at 1000°C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and tetragonal phases is formed at x = 0.02. After the addition of Bi_0.5Na_0.5TiO₃, two dielectric anomalies are observed at high temperatures (T_m ~ 510°C–570°C and T₂ ~ 720°C). The phase transition around T_m becomes wider gradually with increasing x. The ferroelectricity, piezoelectricity, and ferromagnetism of the ceramics are significantly improved after the addition of Bi_0.5Na_0.5TiO₃. High resistivity (~1.3 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 27.4 μC/cm²), good piezoelectricity (d₃₃ =140 pC/N, k_p = 31.4%), and weak magnetic properties (M_r =0.19 emu/g) are observed.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Pb(Mg1/3Nb2/3)O3–PbTiO3 Textured Ceramics with High Piezoelectric Response by a Novel Templated Grain Growth Approach

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ is used as a model system of perovskite solid solutions with very high piezoelectric response at tailored morphotropic phase boundaries to demonstrate the processing of textured ceramics by ceramic‐only technology. A novel homogeneous templated grain growth approach that uses conventional ceramic procedures and a single‐source nanocrystalline powder for the matrix and also for obtaining the templates is described. Two batches of (100) faceted cube‐shaped microcrystals with average sizes of 27 and 10 μm were successfully used as templates, and aligned by tape casting for the processing of <001>‐textured Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ piezoelectric ceramics. Materials with effective piezoelectric coefficients up to 1000 pC/N and ferroelectric properties approaching those of single crystals are obtained.     

Structure and Dielectric Properties of Re0.02Sr0.97TiO3 (Re = La,Sm, Gd,Er) Ceramics for High‐Voltage Capacitor Applications

Rare–earth‐doped strontium titanate ceramics yielding the formula Re_0.02Sr_0.97TiO₃ (Re–ST, Re = La, Sm, Gd, Er) were prepared by solid‐state reaction route. All Re–ST ceramics had single cubic perovskite structure similar to pure SrTiO₃ (ST). The grain size of Re–ST ceramics dramatically decreased to 1–10 μm, depending on different rare‐earth elements, as compared to ~30 μm of pure ST. The relative dielectric constant of Re–ST ceramics (ε_r = 2750–4530 at 1 kHz) showed about 10–15 times higher than that of pure ST (ε_r = 300 at 1 kHz), whereas the dielectric loss of Re–ST ceramics still remained lower than 0.03 (at 1 kHz) at room temperature. Under 0–1.63 × 10⁶ V/m bias electric field testing conditions, the ε_r of Re–ST ceramics at room temperature changed within 14%. The P–E results indicated that the Re–ST ceramics were linear dielectrics. Together with their relatively high breakdown strength (E_b > 1.4 × 10⁷ V/m), the Re–ST ceramics could be very promising for high‐voltage capacitor applications. Meanwhile, the temperature stability of the ε_r of Re–ST ceramics was evaluated in a temperature range of ?60°C–200°C.     

Anisotropy on SrTiO3 templated textured PMN–PT monolithic ceramics

In this work, templated grain growth (TGG) and reactive templated grain growth (RTGG) texture techniques combined with uniaxial hot pressing were used for the first time to produce high dense monolithic textured 0.6PMN–0.4PT ceramics. Microstructural analysis of the textured ceramics showed that both TGG and RTGG texture methods are efficient to promote anisotropic grain nucleation around the SrTiO₃ single crystal templates. The structural data remarkably revealed that although there was no previous reaction of the powder to form the lead magnesium niobate–lead titanate (PMN–PT) compound in the RTGG samples and the ceramic phase formation was 100% perovskite indicating that RTGG texture technique is more attractive than TGG in the case of SrTiO₃ templated PMN–PT. Rather, dielectric characterizations performed in the RTGG samples parallel and perpendicular to the template axis revealed a high anisotropy in the electrical permittivity for RTGG samples (1.48) that were comparable to an estimated value for 0.62PMN–0.38PT single crystals. Piezoelectric characterization of RTGG samples resulted in strain levels up to 0.34% and the highest d₃₃ coefficient was 1100 pC/N, which showed significant increase compared to random ceramic.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Two‐step Synthesis of Platelike Potassium Sodium Niobate Template Particles by Hydrothermal Method

Two‐step hydrothermal synthesis of platelike potassium sodium niobate (K, Na)NbO₃ (KNN) template particles was investigated. Platelike K₄Na₄Nb₆O₁₉·9H₂O (KNN‐hydrate) particles were synthesized in 4 mol/L aqueous alkali at 150°C by the sodium dodecyl benzene sulfonate (SDBS) surfactant‐assisted hydrothermal method, which were used as crystal nucleus in the second step of hydrothermal synthesis. The two‐step synthesized KNN‐hydrate particles with 0.6 μm thickness and 7 μm width were prepared at 80°C after 10 h of the second step. After calcination of the KNN‐hydrate particle at 600°C, platelike KNN particles were obtained, which were used as templates for textured ceramics. Particles obtained by the two‐step synthesis showed regular morphology and uniform distribution, with a marked improvement in grain size.     

Perovskite‐Structured BiFeO3–Bi(Zn1/2Ti1/2)O3–PbTiO3 Solid Solution Piezoelectric Ceramics with Curie Temperature About 700°C

In this article, perovskite‐structured BiFeO₃–Bi(Zn_1/2Ti_1/2)O₃–PbTiO₃ (BF–BZT–PT) ternary solid solutions were prepared with traditional solid‐state reaction method and demonstrated to exhibit a coexistent phase boundary (CPB) with Curie temperature of T_C~700°C in the form of ceramics with microstructure grain size of several micron. It was found that those CPB ceramics fabricated with conventional electroceramic processing are mechanically and electrically robust and can be poled to set a high piezoelectricity for the ceramics prepared with multiple calcinations and sintering temperature around 750°C. A high piezoelectric property of T_C = 560°C, d₃₃ = 30 pC/N, ε₃₃^T/ε₀ = 302, and tanδ = 0.02 was obtained here for the CPB 0.53BF–0.15BZT–0.32PT ceramics with average grain size of about 0.3 μm. Primary experimental investigations found that the enhanced piezoelectric response and reduced ferroelectric Curie temperature are closely associated with the small grain size of microstructure feature, which induces lattice structural changes of increased amount ratio of rhombohedral‐to‐tetragonal phase accompanying with decreased tetragonality in the CPB ceramics. Taking advantage of structural phase boundary feature like the Pb(Zr,Ti)O₃ systems, through adjusting composition and microstructure grain size, the CPB BF–BZT–PT ceramics is a potential candidate to exhibit better piezoelectric properties than the commercial K‐15 Aurivillius‐type bismuth titanate ceramics. Our essay is anticipated to excite new designs of high–temperature, high–performance, perovskite‐structured, ferroelectric piezoceramics and extend their application fields of piezoelectric transducers.     

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Highly oriented <111> and <110> β‐SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH₃)₃–Si(CH₃)₃) as a precursor. The effects of laser power (P_L), total pressure (P_tot), and deposition temperature (T_dep) on the orientation, microstructure, and deposition rate (R_dep) were investigated. The orientation of the β‐SiC films changed from <111> to random to <110> with increasing P_L and P_tot. The <111>‐, randomly, and <110>‐oriented β‐SiC films exhibited dense, cauliflower‐like, and cone‐like microstructures, respectively. Stacking faults were observed in the <111>‐ and <110>‐oriented films, and aligned parallel to the (111) plane in the <111>‐oriented film, whereas they were perpendicular to the (110) plane in the <110>‐oriented film. The highest R_dep of the <111>‐oriented β‐SiC film was 200 μm/h at P_tot = 200 Pa and T_dep = 1420 K, whereas that of the <110>‐oriented film was 3600 μm/h at P_tot = 600 Pa and T_dep = 1605 K.     

Temperature‐Stable Relative Permittivity from −70°C to 500°C in (Ba0.8Ca0.2)TiO3–Bi(Mg0.5Ti0.5)O3–NaNbO3 Ceramics

Temperature‐stable relaxor dielectrics have been developed in the solid solution system: 0.45Ba_0.8Ca_0.2TiO₃–(0.55 ? x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃. Ceramics of composition x = 0 have a relative permittivity ?_r = 950 ± 15% over a wide temperature range from +70°C to 600°C. Modification with NaNbO₃ at x = 0.2 decreases the lower limiting temperature to ?70°C, but also decreases relative permittivity such that ?_r ~ 600 ± 15% over the temperature range ?70°C to 500°C. For composition x = 0.3, the low‐temperature dispersion in loss tangent, tan δ, (at 1 kHz) shifts to lower temperature, giving tan δ values ≤0.02 across the temperature range ?60°C to 300°C in combination with ?_r ~ 550 ± 15%. Values of dc resistivity for all samples are of the order of 10¹⁰ Ω m at 250°C and 10⁷ Ω m at 400°C.     

Novel BiFeO3–BaTiO3–Ba(Mg1/3Nb2/3)O3 Lead‐Free Relaxor Ferroelectric Ceramics for Energy‐Storage Capacitors

A novel lead‐free relaxor ferroelectric ceramic of (0.67?x)BiFeO₃–0.33BaTiO₃–xBa(Mg_1/3Nb_2/3)O₃ [(0.67?x)BF–0.33BT–xBMN, x = 0–0.1] was prepared by a solid‐state reaction method. A relatively high maximum polarization P_max of 38 μC/cm² and a low remanent polarization P_r of 5.7 μC/cm² were attained under 12.5 kV/mm in the x = 0.06 sample, leading to an excellent energy‐storage density of W ~1.56 J/cm³ and a moderate energy‐storage efficiency of η ~75%. Moreover, a good temperature stability of the energy storage was obtained in the x = 0.06 sample from 25°C to 190°C. The achievement of these characteristics was basically attributed to an electric field induced reversible ergodic to ferroelectric phase transition owing to similar free energies near a critical freezing temperature. The results indicate that the (0.67?x)BF–0.33BT–xBMN lead‐free realxor ferroelectric ceramic could be a promising dielectric material for energy‐storage capacitors.     

Temperature stable K0.5(Nd1−xBix)0.5MoO4 microwave dielectrics ceramics with ultra‐low sintering temperature

K_0.5(Nd_1?xBi_x)_0.5MoO₄ (0.2 ≤ x ≤ 0.7) ceramics were prepared via the solid‐state reaction method. All ceramics densified below 720°C with a uniform microstructure. As x increased from 0.2 to 0.7, relative permittivity (?_r) increased from 13.6 to 26.2 commensurate with an increase in temperature coefficient of resonant frequency (TCF) from – 31 ppm/°C to + 60 ppm/°C and a decrease in Qf value (Q = quality factor; f = resonant frequency) from 23 400 to 8620 GHz. Optimum TCF was obtained for x = 0.3 (?15 ppm/°C) and 0.4 (+4 ppm/°C) sintered at 660 and 620°C with ?_r ~15.4, Q_f ~19 650 GHz, and ?_r ~17.3, Q_f ~13 050 GHz, respectively. Ceramics in this novel solid solution are a candidate for ultra low temperature co‐fired ceramic (ULTCC) technology.     

Microstructure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of Sc‐Modified BiFeO3–BaTiO3 Multiferroic Ceramics with MnO2 Addition

0.725BiFe_1?xSc_xO₃–0.275BaTiO₃ + y mol% MnO₂ multiferroic ceramics were fabricated by a conventional ceramic technique and the effects of Sc doping and sintering temperature on microstructure, multiferroic, and piezoelectric properties of the ceramics were studied. The ceramics can be well sintered at the wide low sintering temperature range 930°C–990°C and possess a pure perovskite structure. The ceramics with x/y = 0.01–0.02/1.0 sintered at 960°C possess high resistivity (~2 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 19.1–20.4 μm/cm²), good piezoelectric properties (d₃₃ = 127–128 pC/N, k_p = 36.6%–36.9%), and very high Curie temperature (618°C–636°C). The increase in sintering temperature improves the densification, electric insulation, ferroelectric, and piezoelectric properties of the ceramics. A small amount of Sc doping (x ≤ 0.04) and the increase in the sintering temperature significantly enhance the ferromagnetic properties of the ceramics. Improved ferromagnetism with remnant magnetization M_r of 0.059 and 0.10 emu/g and coercive field H_c of 2.51 and 2.76 kOe are obtained in the ceramics with x/y = 0.04/1.0 (sintered at 960°C) and 0.02/1.0 (sintered at 1050°C), respectively. Because of the high T_C (636°C), the ceramic with x/y = 0.02/1.0 shows good temperature stability of piezoelectric properties. Our results also show that the addition of MnO₂ is essential to obtain the ceramics with good electrical properties and electric insulation.     

Chemical Synthesis,Sintering and Piezoelectric Properties of Ba0.85Ca0.15 Zr0.1Ti0.9O3 Lead‐Free Ceramics

The preparation of Ba_0.85Ca_0.15 Zr_0.1Ti_0.9O₃ (BCZT) powders by wet chemical methods has been investigated, and the powders used to explore relationships between the microstructure and piezoelectric properties (d₃₃ coefficient) of sintered BCZT ceramics. Sol–gel synthesis has been shown to be a successful method for the preparation of BCZT nanopowders with a pure tetragonal perovskite phase structure, specific surface area up to 21.8 m²/g and a mean particle size of 48 nm. These powders were suitable for the fabrication of dense BCZT ceramics with fine‐grain microstructures. The ceramics with the highest density of 95% theoretical density (TD) and grain size of 1.3 μm were prepared by uniaxial pressing followed by a two‐step sintering approach which contributed to the refinement of the BCTZ microstructure. A decrease in the grain size to 0.8–0.9 μm was achieved when samples were prepared using cold isostatic pressing. Using various sintering schedules, BCZT ceramics with broad range of grain sizes (0.8–60.5 μm) were prepared. The highest d₃₃ = 410.8 ± 13.2 pC/N was exhibited by ceramics prepared from sol–gel powder sintered at 1425°C, with the relative density of 89.6%TD and grain size of 36 μm.     

Enhanced Multiferroic and Magnetocapacitive Properties of (1 − x)Ba0.7Ca0.3TiO3–xBiFeO3 Ceramics

The structures, Curie temperature, dielectric relaxor behaviors, ferroelectricity, ferromagnetism, and magnetocapacitance of the (1?x)Ba_0.70Ca_0.30TiO₃–xBiFeO₃ [(1?x)BCT–xBF, x = 0–0.90] solid solutions have been systematically investigated. The ceramics have coexisted tetragonal (T) and orthorhombic (O) phases when x ≤ 0.06, coexisted pseudocubic (PC) and O phases when x = 0.065, coexisted cubic and O phases when 0.07 ≤ x ≤ 0.12, PC phase when 0.21 ≤ x ≤ 0.42, coexisted T and rhombohedral (R) phases when 0.52 ≤ x ≤ 0.70, and R phase when x ≥ 0.75. Significantly, composition‐dependent microstructures and Curie temperature are observed, the average grain size increases from 1.9 μm for x = 0, reaches 12.0 μm for x = 0.67, and then decreases to 1.3 μm for x = 0.90. At room temperature, the ceramics with x = 0.42–0.70 show piezoelectric properties and multiferroic behaviors, characterized by the polarization‐electric field, polarization current intensity–electric field, and magnetization–magnetic field curves, the composition with x = 0.67 has maximum polarization, remnant polarization, maximum magnetization, and remnant magnetization of 15.0 μC/cm², 9.1 μC/cm², 0.33 emu/g, and 0.14 emu/g, respectively. In addition, the magnetocapacitance is evidenced by the increased relative dielectric constant with increasing the applied magnetic field (H). With ΔH = 8 kOe, the composition with x = 0.67 shows the largest values of (ε_r(H) ? ε_r(0))/ε_r(0) = 2.96% at room temperature. The structure–property relationship is discussed intensively.     

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

MoSi₂‐ and WSi₂‐based electroconductive ceramic composites were fabricated using 40‐80 vol% fine‐ and coarse‐Al₂O₃, and ZrO₂ particles (refractory oxides) after sintering in argon. Their chemical and thermal stability was tested between 1400°C‐1600°C for up to 48 hours. X‐ray diffraction analysis showed the formation of secondary 5‐3 metal silicide (Mo₅Si₃, W₅Si₃) and silica phases on the grain boundaries and surface. The fraction of the W₅Si₃ (11.4‐38.8 vol%) was significantly higher than that of the Mo₅Si₃ (3.3‐7.3 vol%) in the composites after annealing at 1400°C for 48 hours. The rates of grain growth in the composites (0.013‐0.023 μm/h) were highly decreased by a grain‐boundary pinning effect. This effect was relatively better with the addition of the coarse‐grained oxides due to their more homogeneous distribution throughout the microstructure. The 20–80 vol% MoSi₂‐Al₂O₃ (fine‐grained) composite exhibited an electrical conductivity of 8.8 S/cm at 900°C. At the 60 vol% silicide content, MoSi₂–Al₂O₃ (coarse‐grained) and WSi₂–Al₂O₃ (fine‐grained) showed higher electrical conductivity (126‐128 S/cm) at 900°C. The density, porosity level, particle distribution, intrinsic conductivity of silicide phase, particle size, and fraction of the secondary 5‐3 silicide phase highly influenced their electrical properties.     

Properties of an Infrared‐Transparent MgO:Y2O3 Nanocomposite

A 50:50 vol% MgO–Y₂O₃ nanocomposite with ~150 nm grain size was prepared in an attempt to make 3–5 μm infrared‐transmitting windows with increased durability and thermal shock resistance. Flexure strength of the composite at 21°C is 679 MPa for 0.88 cm² under load. Hardness is consistent with that of the constituents with similar grain size. For 3‐mm‐thick material at 4.85 μm, the total scatter loss is 1.5%, forward scatter is 0.2%, and absorptance is 1.8%. Optical scatter below 2 μm is 100%. Variable intensity OH absorption (~6% absorptance) is observed near 3 μm. The refractive index is ~0.4% below the volume‐fraction‐weighted average of those of the constituents. Thermal expansion is equal to the volume‐fraction‐weighted average of expansion of the constituents. Specific heat capacity is equal to the mass‐fraction‐weighted average of heat capacities of the constituents. Thermal conductivity lies between those of the constituents up to 1200 K. Elastic constants lie between those of the constituents. The Hasselman mild thermal shock resistance parameter for the composite is twice as great as that of common 3–5 μm window materials, but half as great as that of c‐plane sapphire.