Influence of WO3‐Doping on the Microstructure and Electrical Properties of ZnO–Bi2O3 Varistor Ceramics Sintered at 950°C

The phase evolution, microstructure, and electrical properties of WO₃‐doped ZnO–Bi₂O₃‐based varistors were investigated for different amounts x (0 ≤ x ≤ 1.60 mol%) of the dopant. When x was less than 0.40, the dissolved W⁶⁺ in the β‐Bi₂O₃ acted as a donor in the grain boundaries and reduced the electrical properties of the ZnO varistors. However, when x was 0.40 mol%, which meant an amount of WO₃ equal to that of Bi₂O₃, the electrical properties dramatically increased, which means the W⁶⁺ donor effect is removed at the grain boundaries because a new Bi₂WO₆ phase was formed in the grain‐boundary regions. The Bi₂WO₆ phase has high oxygen conductivity at high temperatures; it transfers more oxygen to the grain boundaries in order to further enhance the electrical properties. For x values higher than 0.40 (i.e., an addition of WO₃ that is greater than the content of Bi₂O₃), the electrical properties were steadily reduced in comparison to the composition with x = 0.40. This could be explained by the reduced amount of Co, Mn, and Al at the grain boundaries and in the ZnO grains as a result of their incorporation into the ZnWO₄ phase. The electrical properties of the ZnO grains and the grain boundaries were in agreement with the results of the impedance spectroscopy analysis.     

Grain‐Boundary and Thermally Stimulated Current Characteristics of Y2O3‐Doped ZnO Varistor

The doping of rare‐earth oxides can greatly improve the electrical characteristics of ZnO varistors. Thermally stimulated current (TSC) characteristic test, capacitance voltage (C–V) characteristic test, scanning electron microscope (SEM) test, and voltage current (V–I) test were carried out to study the influence of Y₂O₃ content on the electrical properties of ZnO varistors in this study. The results show that the grain size decreases while the voltage gradient increases as the Y₂O₃ content is increased. The reaction of Y₂O₃ with other additives leads to the decrease in grain‐boundary defects, which accounts for the decrement of barrier height, donor density, and surface state density. The trap level and trapped charge of ZnO varistors decrease as the Y₂O₃ content is increased from 0.3 to 0.9 mol%, which means the shallow traps inside ZnO varistors reduce, and the Y₂O₃ additive can greatly improve the TSC characteristic of ZnO varistors.     

Experimental Phase Diagram Determination and Thermodynamic Assessment of the CeO2‐Gd2O3‐CoO System

New phase diagram data and a thermodynamic assessment of the CeO‐Gd₂O₃‐CoO system using the CALPHAD approach are presented. This information is needed to understand the surprisingly low sintering temperature (950°C–1050°C) of CeO₂‐based materials doped with small amounts of transition metal oxide (e.g., CoO). Experimental phase equilibria between 1100°C and 1300°C are reported based on the analysis of annealed and molten samples. No isolated compound exists in the ternary. At 1300°C the Co solubility in the ternary compounds Ce_1?x?yGd_xCo_yO_2?x/2?y (fluorite) is 2.7 mol% and is less than 1 mol% in the Gd_2?xCe_xO_3+x/2 (bixbyite). The Ce solubility in the perovskite GdCoO_3?δ was found to be 1 mol%. The lowest temperature eutectic melt in the ternary has a composition of 57.2 mol% Co and 41.1 mol% Gd melting at an onset temperature of 1303 ± 5°C, which is close to the binary eutectic in the Gd₂O₃‐CoO system at 60 ± 2 mol% Co and 1348 ± 1°C.     

Er3+ ‐Doped Y2O3 Nanophosphors for Near‐Infrared Fluorescence Bioimaging Applications

Rare‐earth‐doped ceramic nanophosphor (RED‐CNP) materials are promising near‐infrared (NIR) fluorescence bioimaging (FBI) agents that can overcome problems of currently used organic dyes including photobleaching, phototoxicity, and light scattering. Here, we report a NIR–NIR bioimaging system by using NIR emission at 1550 nm under 980 nm excitation which can allow a deeper penetration depth into biological tissues than ultraviolet or visible light excitation. In this study, erbium‐doped yttrium oxide nanoparticles (Er³⁺:Y₂O₃) with an average particle size of 100 and 500 nm were synthesized by surfactant‐assisted homogeneous precipitation method. NIR emission properties of Er³⁺:Y₂O₃ were investigated under 980 nm excitation. The surface of Er³⁺:Y₂O₃ was electrostatically PEGylated using poly (ethylene glycol)‐b‐poly(acrylic acid) (PEG‐b‐PAAc) block copolymer to improve the chemical durability and dispersion stability of Er³⁺:Y₂O₃ under physiological conditions. In vitro cytotoxic effects of bare and PEG‐b‐PAAc‐modified Er³⁺:Y₂O₃ were investigated by incubation with mouse macrophage cells (J774). Microscopic and macroscopic FBI were demonstrated in vivo by injection of bare or PEG‐b‐PAAc‐modified Er³⁺:Y₂O₃ into C57BL/6 mice. The NIR fluorescence images showed that PEG‐b‐PAAc modification significantly reduced the agglomeration of Er³⁺:Y₂O₃ in mice and enhanced the distribution of Er³⁺:Y₂O₃.     

Electrical properties and stability of praseodymium oxide-based ZnO varistor ceramics doped with Er2O3

The electrical properties and its stability against DC accelerated aging stress of Pr₆O₁₁-based ZnO varistor ceramics were investigated with Er₂O₃ content and sintering time. The nonlinear exponent of varistors with increasing Er₂O₃ content varied with V-shape, reaching minimum at 1.0 mol% Er₂O₃. As sintering time is increased, the nonlinear exponent was decreased, whereas its stability for DC stress was improved. The varistor with 0.5 mol% Er₂O₃ sintered at 1340 °C for 2 h exhibited the best performance for the nonlinearity and stability. This varistor exhibited not only high nonlinearity, with the nonlinear exponent of 43.4 and the leakage current of 1.2 μA, but also high stability, with the variation rates of varistor voltage and nonlinear exponent is −1.5 and −2.5%, respectively, under DC stress, such as (0.80V_{1 mA}/90 °C/12 h)+(0.85V_{1 mA}/115 °C/ 12 h)+(0.90V_{1 mA}/120 °C/12 h)+(0.95 V_{1 mA} /125 °C/12 h) +(0.95V_{1 mA}/150 °C/12 h).     

The effect of SiO2 on electrical properties of low‐temperature‐sintered ZnO–Bi2O3–TiO2–Co2O3–MnO2‐based ceramics

ZnO–Bi₂O₃–TiO₂–Co₂O₃–MnO₂‐based (ZBTCM) varistors were fabricated via the conventional solid‐state method, and the effect of SiO₂ content on the phase transformation, microstructure, and electrical properties of the ZBTCM had been investigated. Results showed that this varistor can be sintered at a low temperature of 880°C with a high sintering density above 0.95 of the ZnO theoretical density. In these components, SiO₂ acts as a controller in ZnO grain growth, decreasing the grain size of ZnO from 3.67 to 1.92 μm, which in turn results in an increase in breakdown voltage E_1mA from 358.11 to 1080 V/mm. On the other hand, SiO₂ has a significant influence on the defect structure and component distribution at grain‐boundary regions. When SiO₂ content increases from 0 to 4 wt%, the value of the interface state density (N_s) increases sharply. At the same time, the electrical properties are improved gradually, and reach an optimized value with the nonlinear coefficient (α) up to 54.18, the barrier height (?_b) up to 2.90 eV, and the leakage current (I_L) down to 0.193 μA/cm².     

Thermal Conductivity of Molten Li2O–B2O3 and K2O–B2O3 Systems

Using the transient hot‐wire method, the thermal conductivity properties of the molten Li₂O–B₂O₃ and K₂O–B₂O₃ systems were measured. The thermal conductivity increases with decreasing the temperature due to the borate structure change. In addition, calculations of the one‐dimensional Debye temperature and the phonon mean free paths as a function of temperature of the alkali borate systems were made. At a fixed temperature of 1273 K, the effect of the alkali oxide concentration on the thermal conductivity was evaluated. Within a range of 10–30 mol% Li₂O (or K₂O), a positive relationship between the thermal conductivity and 4‐coordinate boron was obtained. However, below 10 mol% Li₂O (or K₂O), the change in the intermediate‐range order of the borate structure had a more dominant effect on the thermal conductivity. Finally, the effect of cations on the thermal conductivity in the various molten R₂O–B₂O₃ (R=Li, Na and K) systems was considered. Depending on the type of cation, the change in the ionization potential had an effect on the thermal conductivity and also resulted in a change in the bond strength.     

Nonlinear Property of (Nb2O5, SrCO3, Ge,GeO2)‐Codoped TiO2‐Based Varistor Ceramics

This study investigated the influence of codoping with Ge and GeO₂ on the nonlinear coefficient α and the breakdown voltage E_B of TiO₂–Nb₂O₅–SrCO₃ varistor ceramics. Ge–GeO₂ codoping notably changed the microstructure of the TiO₂–Nb₂O₅–SrCO₃ ceramics, increased α, and decreased E_B. When the doping contents of Nb₂O₅ and SrCO₃ were 0.1 and 0.2 mol%, respectively, the optimum doping content of 0.25 mol% Ge and 0.75 mol% GeO₂ exhibited high α (11.6), low E_B (13.8 V/mm), and high grain‐boundary barrier Φ_B (0.96 eV). These results are superior to previous findings. In addition, Ge and GeO₂, which function as sintering aids, reduced the sintering temperature caused by the low melting point. The optimal sintering temperature was 1260°C for the TiO₂–Nb₂O₅–SrCO₃ ceramics doped with Ge and GeO₂.     

Effects of Sb2O3 on the microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics fabricated by two-step solid-state reaction route

In this work, the ZnO–Bi₂O₃–Cr₂O₃–Co₂O₃–MnO₂ varistors doped with different content of Sb₂O₃ were prepared by two-step solid-state reaction route, including a pre-calcining of the mixtures of nanosized ZnO and the other additives at an optimized temperature, followed by a consequent sintering process at different temperatures. Meanwhile, the effects of Sb₂O₃ on the sintering temperature, microstructure and electrical properties of the objective varistors were investigated. It was found the densification temperature went up in a proper range and the content of pyrochlore phase, spinel phase and β-Bi₂O₃ phase increased with the increasing content of Sb₂O₃, while the grain size of ZnO–Bi₂O₃-based varistor reduced. The results demonstrated that at the same sintering temperature, the second particles increased with the increasing amount of Sb₂O₃, which was helpful to control the grain growth, leading to a higher breakdown voltage. However, the decrease of α-Bi₂O₃ phase (melting point of α-Bi₂O₃ phase is 825 °C), which is the main component of the liquid Bi₂O₃ phase in the sample during sintering process, leads to the increase of the sintering temperature of the green pallet. As a result, the ZnO varistor doped with 3.0 mol% Sb₂O₃ sintered at 1000 °C exhibited the highest breakdown voltage of 1863.3 V/mm. By contrast, the ZnO varistor without Sb₂O₃ doping sintered at 900 °C had the optimum nonlinear coefficient of 59.8.     

Y3Al5O12–SiO2 Glasses: Structure and Polyamorphism

Aerodynamic levitation and CO₂ laser melting have been used to synthesize the yttrium aluminosilicate glasses zY₂O₃–yAl₂O₃–xSiO₂ with z/y = 3/5 corresponding to the YAG (Y₃Al₅O₁₂) composition and x between ~5 and ~45 mol%. The low‐ and high‐density (LDA inclusion and HDA matrix) polyamorphic phases in glasses with less than ~14 mol% SiO₂ were identified with backscattering electron imaging. Polarized and depolarized Raman spectra show the formation of various Qⁿ SiO₄ species whose relative populations change smoothly as the SiO₂ content is altered. The AlOs (s = 4–6) and YOz (z = 6–9) polyhedra formed in the YAG glass are preserved upon silica additions while the terminal oxygens of the Q²AlO₄ tetrahedra are gradually bridged to the Qⁿ‐SiO₄ species. The low‐frequency Boson Peak overlaps with the vibrational spectrum and its maximum is redshifted with increasing silica content. Micro‐Raman spectra measured for the LDA and HDA amorphous phases are found to be similar to the spectra of the bulk glass indicating common structural characteristics. The stability of the LDA phase against crystallization appears to be lower than that of the HDA phase. The crystallinity on certain inclusions consisted of YAG microcrystals and a new unidentified microcrystalline phase within Y₄Al_2(1?x)Si_2xO_(9+x) solid solution.     

New calcium‐free Na2O–Al2O3–P2O5 bioactive glasses with potential applications in bone tissue engineering

Sodium aluminophosphate glasses were evaluated for their bone repair ability. The glasses belonging to the system 45Na₂O–xAl₂O₃‐(55‐x)P₂O₅, with x = (3, 5, 7, 10 mol%) were prepared by a melt‐quenching method. We assessed the effect of Al₂O₃ content on the properties of Na₂O–Al₂O₃–P₂O₅ (NAP) glasses, which were characterized by density measurements, DSC analyses, solubility, bioactivity in simulated body fluid and cytocompatibility with MG‐63 cells. To the best of our knowledge, this is the first investigation of calcium‐free Na₂O–Al₂O₃–P₂O₅ system glasses as bioactive materials for bone tissue engineering.     

Effect of Ga2O3 on Sintering and Phase Stability of Sc2O3‐Doped Tetragonal Zirconia Prepared via Aqueous Solution Route

The effects of the presence of Ga₂O₃ on low‐temperature sintering and the phase stability of 4, 5, and 6 mol% Sc₂O₃‐doped tetragonal zirconia ceramics (4ScSZ, 5ScSZ, and 6ScSZ, respectively) were investigated. A series of zirconia sintered bodies with compositions (ZrO₂)_0.99?x(Sc₂O₃)_x(Ga₂O₃)_0.01, x = 0.04, 0.05, and 0.06 was fabricated by sintering at 1000°C to 1500°C for 1 h using fine powders that were prepared via the combination of homogeneous precipitation method and hydrolysis technique using monoclinic zirconia sols synthesized through the forced hydrolysis of an aqueous solution of zirconium oxychloride at 100°C for 168 h. The presence of 1 mol% Ga₂O₃ was effective in reducing sintering temperature necessary to fabricate dense bodies and enabled to obtain dense sintered bodies via sintering at 1100°C for 1 h. The phase stability, that is, low‐temperature degradation behavior of the resultant zirconia ceramics was determined under hydrothermal condition. The zirconia ceramics codoped with 1 mol% Ga₂O₃ and 6 mol% Sc₂O₃ (1Ga6ScZ) fabricated via sintering at 1300°C for 1 h showed high phase stability without the appearance of monoclinic zirconia phase, that is the tetragonal‐to‐monoclinic phase transformation was not observed in the 1Ga6ScZ after treatment under hydrothermal condition at 150°C for 30 h.     

Hydrothermal formation and up‐conversion luminescence of Er3+‐doped GdNbO4

The effect of concentration of Er³⁺ on the up‐conversion and photoluminescence properties of Gd_1.00?xEr_xNbO₄, x=0‐0.50 which has monoclinic fergusonite‐type structure as a main phase has been investigated, using a processing technique based on hydrothermal method. Under weakly basic hydrothermal condition at 240°C for 5 hours, a single phase of fergusonite‐type Gd_1.00?xEr_xNbO₄ solid solution was directly formed as nanocrystals by the substitutional incorporation of Er³⁺ into GdNbO₄ because of the gradual and linear decrease in the lattice parameters of the monoclinic phase corresponding to the Vegard's Law. The gadolinium niobate doped with 2 mol% Er³⁺, Gd_0.98Er_0.02NbO₄ after heating at 1300°C for 1 hour, which has nanocrystalline structure whose crystallite size is around 29 nm, exhibits the highest photoluminescence intensity in the green spectral region, 515‐560 nm under excitation at wavelength of 254 nm. On the other hand, the up‐converted luminescence intensity of the niobate nanocrystals becomes the maximum at the concentration of 20 mol% Er³⁺, Gd_0.80Er_0.20NbO₄ under excitation at 980 nm. These results demonstrate that the material, Er³⁺‐doped GdNbO₄ nanocrystals prepared through hydrothermal route and postheating has potential for up‐converting phosphor.     

Effects of Nb,Mn doping on the Structure,Piezoelectric, and Dielectric Properties of 0.8Pb(Sn0.46Ti0.54)O3–0.2Pb(Mg1/3Nb2/3)O3 Piezoelectric Ceramics

Nb and Mn were doped, respectively, to 0.8Pb(Sn_0.46Ti_0.54)O₃–0.2Pb(Mg_1/3Nb_2/3)O₃ (PST–PMN) to improve electrical properties for meeting the requirement in various fields. The additions of Nb and Mn influence in a pronounced way the structure, and improve the densities of the ceramics. Nb‐doped PST–PMN increased the piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, and relative dielectric constant ε, indicating “soft” piezoelectric behavior. Mn doping played a “hard” part, which significantly enhanced the mechanical quality factor Q_m without deteriorating other piezoelectric properties. The most excellent properties of Nb‐doped PST–PMN were obtained with doping amount of 0.75 mol%, specifically d₃₃, k_p, being on the order of 455 pC/N, 57.5% and 3560, respectively. The addition of 0.75 mol% Mn for PST–PMN presented the optimum electrical properties, with Q_m of 554, d₃₃ of 430 pC/N, k_p of 57.0%, ε of 2770. It was proposed that the addition of Nb, Mn generated different defect dipoles involved in the domain walls motion and intrinsic piezoelectric responses, leading to different effects on electrical properties.     

Identification of Substitution Mechanism in Group VIII Metal Oxides Doped Pb(Zn1/3Nb2/3)O3–PbZrO3–PbTiO3 Ceramics with High Energy Density and Mechanical Performance

Group VIII metal oxides, that is, Fe₂O₃, Co₂O₃, and NiO have been introduced to 0.2Pb(Zn_1/3Nb_2/3)O₃–0.8Pb(Zr_0.50Ti_0.50)O₃ (PZN–PZT) to deterministically identify the substitution mechanism and meantime to tailor mechanical and piezoelectric properties in obtaining energy harvesting materials. On the basis of the X‐ray diffraction and Raman analysis, it is clear that the group VIII metal oxides induce a phase transformation from the morphotropic phase boundary to the tetragonal phase side, and the corresponding grain size increases accordingly. It is reasonable to deduce that two types of substitution behaviors coexist in the group VIII metal oxides added PZN–PZT system. Due to the mixed valence of +2 and +3, the foreign doping ions prefer to enter the B site in the perovskite structure, not only substituting for Ti⁴⁺, Zr⁴⁺, and Nb⁵⁺ ions in the inequivalence replacement but also substituting for Zn²⁺ ions in the equivalence replacement. The proposed complex substitution mechanisms can give the full explanation about the grain growth phenomena and the variation in mechanical and electric properties in the modified PZN–PZT system. At the same doping level of 0.3 mol%, the maximum transduction coefficient (d₃₃·g₃₃ = 13120 × 10^?15 m²/N) and good fracture toughness (K_IC = 1.32 MPa m^1/2) are obtained in Co₂O₃ added 0.2PZN–0.8PZT ceramics, which shows great promise as practical materials for energy harvesting device applications.     

Erbium activating effect on the photoluminescence,morphology, and structure studies of nano-composite Phospho-silicate SiO2–P2O5

Smart nano-composites Phospho-silicate (SiO₂–P₂O₅) prepared in monolith form containing 16 mol% P₂O₅, and doped with different mol% of Er³⁺ ions between 0.5 and 5 mol%; the composite has been synthesized by Sol-Gel technique, and subsequently annealed at 850 °C.X-ray diffraction patterns show the structural properties of the mentioned prepared samples, giving rise to the crystallite sizes to increase in a range between 18, and 20.8 nm as the molar percent of the Er³⁺ ion increase from 0% to 5%. The morphology, and surface morphology of the prepared samples were characterized using TEM, and FESEM, respectively. The Raman analyses show that the active Raman bands are corresponding to silicate, and phosphate. These bands were enveloped by the strong asymmetric vibrations of Er₂O₃ at 420, and 840 cm⁻¹, their Bose-Einstein corrected intensities increased gradually by increasing the Er³⁺ ions concentration in the regions from 3400 up to 3450 cm⁻¹, and 3550 up to 3700 cm⁻¹. The optical studies show that the refractive index increased by increasing Er³⁺ ions concentration, from 1.7 up to 1.8 for as the concentration of Er³⁺ ions increase. The photoluminescence are exhibiting an emission with splitting at 1545, and 1555 nm, which is related to the intra 4F transition. It has been found that the optimal doping content of Er is 1 mol% then, after quenching caused by OH groups in Er³⁺ ions doped Phospho-silicate at higher concentrations. It is obviously that 1 mol% of Erbium ions is a suitable candidate for photonic applications such as Laser waveguide, and optical amplifier.     

Phase equilibrium in binary La2O3-Dy2O3 and ternary CeO2-La2O3-Dy2O3 systems

Cerium oxide doped with oxides of rare earth elements is a multifunctional material, a wide range of uses which is associated with its unique physicochemical properties. Phase diagrams of multicomponent systems are the physicochemical basis for the creation of new materials with improved characteristics.In this work, phase equilibria in ternary CeO₂–La₂O₃–Dy₂O₃ and binary La₂O₃–Dy₂O₃ systems in the whole concentration range were studied. No new phases have been identified in these systems. An isothermal section of the phase diagram of the CeO₂–La₂O₃–Dy₂O₃ system at a temperature of 1500 °С is constructed. No new phases have been detected in the system. It was found that in the studied ternary system solid solutions are formed on the basis of (F) modification of CeO₂ with structure of fluorite type, monoclinic (B), cubic (C) and hexagonal (A) modifications of Ln₂O₃.In the La₂O₃–Dy₂O₃ binary system (1500–1100 °С) three types of solid solutions are formed: based on hexagonal modification A-La₂O₃, monoclinic modification B-Dy₂O₃ and cubic modification C-Dy₂O₃ separated by two-phase fields (A+B) and (B+C), respectively. The boundaries of the regions of homogeneity of solid solutions based on A-La₂O₃ are determined by compositions containing 35–40, 20–25, 15–20 mol% Dy₂O₃ at 1500, 1250, 1100 °C, respectively. From the obtained data it follows that the solubility of Dy₂O₃ in the hexagonal modification of lanthanum oxide is 39 mol% at 1500 °C, 23 mol. % at 1250 °C and 16 mol% at 1100 °C. The limits of existence of solid solutions based on monoclinic B-modification are determined by compositions containing 30–35, 65–60 (1250 °С), 35–40, 55–60 (1100 °С) 40–45, 70–75 (1500 °C) mol% Dy₂O₃.In the studied system, with a decrease in temperature from 1500° to 1100°C, there is a decrease in the solubility of La₂O₃ in the crystal lattice of cubic solid solutions of C-type from 16 to 10 mol%.     

Characterization of Bi2O3 thin films for doping photoluminescent Er3+ ions

Undoped and Er³⁺-doped Bi₂O₃ thin films were sputter-deposited on Si(100) substrates. Sufficiently oxidized Bi₂O₃ films with refractive indices between 2.17?2.23 were obtained at a wavelength of 633 nm; these values are comparable to those of bulk Bi₂O₃ crystals. While the film composition was stable for deposition temperatures between room temperature (RT) and 450 °C, the refractive index steeply decreased above 450 °C and reached 1.4 at 600 °C. The lowering of the optical transmittance spectra indicated aggregation of metallic Bi and darkening of the film. All films exhibited X-ray diffraction patterns of α-Bi₂O₃. The direct and indirect bandgap energies derived from the Tauc plots were 3.4–3.7 eV and 1.9–2.5 eV, respectively, depending on the O₂ flow rate and deposition temperature. Upon excitation of Er³⁺-doped Bi₂O₃ films at 532 nm, Er³⁺ emissions peaking at 1537 and 1541 nm appeared, and the photoluminescence spectra included fine structures reflecting crystal-field splitting. Resonant excitation of Er³⁺ 4f levels and indirect excitation via the defect levels of Bi₂O₃ followed by energy transfer to Er³⁺ contributed to the emission. The films deposited at RT with Er concentrations of 2 at.% had the emission intensity of Er³⁺, but concentration quenching strongly suppressed the Er³⁺ emission because the doped Er³⁺ ions stayed inside the Bi₂O₃ crystals. At deposition temperatures above 400 °C, the concentration quenching was mitigated possibly because out-diffusion of Er³⁺ ions reduced the effective number of Er³⁺ ions in the Bi₂O₃ crystalline domains.     

Structural and Dielectric Properties in (1−x)BaTiO3–xBi(Mg1/2Ti1/2)O3 Ceramics (0.1 ≤ x ≤ 0.5) and Potential for High‐Voltage Multilayer Capacitors

Structural and dielectric properties of (1?x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (x = 0.1–0.5) were investigated to understand the binary system and utilize it for high‐voltage, high energy density capacitors. The solubility limit for Bi(Mg_1/2Ti_1/2)O₃ in a BaTiO₃ perovskite was between x = 0.4 and x = 0.5. A phase with pseudocubic symmetry was formed for x = 0.1–0.4; a secondary phase developed at x = 0.5. Dielectric measurements showed highly diffusive and dispersive relaxor‐like characteristics from 10 to 40 mol% of Bi(Mg_1/2Ti_1/2)O₃. These compositions also showed high relative permittivity with low‐temperature coefficients of permittivity over a wide range of temperatures ?100°C–600°C. Relaxation behavior was quantitatively investigated using the Vogel–Fulcher model, which revealed the activation energy of 0.17–0.22 eV. Prototyped multilayer capacitors of 18 mm × 17 mm × 4 mm dimensions with a capacitance of 12.5 nF at 1 kHz were successfully constructed and demonstrated multiple charge–discharge characteristics up to 10 kV.     

A Novel Magnetodielectric Solid Solution Ceramic 0.4LiFe5O8–0.6Li2MgTi3O8 with Excellent Microwave Dielectric Properties

In this study, a novel spinel solid solution ceramic of 0.4LiFe₅O₈–0.6Li₂MgTi₃O₈ (0.4LFO–0.6LMT) has been developed and investigated. It is found that the 40 mol% LiFe₅O₈ and 60 mol% Li₂MgTi₃O₈ are fully soluble in each other and a disordered spinel phase is formed. The ceramic sample sintered at 1050°C/2 h exhibits both good magnetic and dielectric properties in the frequency range 1–10 MHz, with a permeability between 29.9~14.1 and magnetic loss tangent between 0.12~0.67, permittivity between 16.92~16.94 and dielectric loss tangent between 5.9 × 10^?3–2.3 × 10^?2. The sample also has good microwave dielectric properties with a relative permittivity of 16.1, a high quality factor (Q × f) ~28 500 GHz (at 7.8 GHz). Furthermore, 3 wt% H₃BO₃–CuO (BCu) addition can effectively lower the sintering temperature to 925°C and does not degrade the magnetodielectric properties. The chemical compatibility with silver electrode indicates that this kind of ceramics is a good candidate for the low‐temperature cofired ceramic (LTCC) application.