Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Al0.5Ga0.5)O3 Lead‐Free Piezoceramics

A new lead‐free BNT‐based piezoelectric ceramics of (1 ? x)Bi_0.5Na_0.5TiO₃–xBi(Al_0.5Ga_0.5)O₃ (x = 0, 0.02, 0.03, 0.04, and 0.05) were synthesized using a conventional ceramic fabrication method. Their structures and electrical properties were investigated. All the samples show a typical ferroelectric P(E) loops and S(E) curves at room temperature. The optimal properties are obtained at the composition of the x = 0.03. The substitution of Bi(Al_0.5Ga_0.5)O₃ enhances piezoelectric constant and increases Curie temperature from 58 pC/N and 310°C of pure BNT to 93 pC/N and 325°C of the x = 0.03. The temperature‐dependent P(E) loops and S(E) curves of 0.97BNT–0.03BAG indicate that phase transition from ferroelectric to antiferroelectric takes place over a very wide temperature region from 80°C to 180°C. The results show that the introduction of BAG improves the electrical properties of BNT.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Mg0.5Ti0.5)O3 Lead‐Free Piezoceramics

Lead‐free BNT‐based piezoceramics, (1?x)Bi_0.5Na_0.5TiO₃–xBi(Mg_0.5Ti_0.5)O₃ [(1?x)BNT–xBMT] (0.00 ≤ x ≤ 0.06) binary system, were synthesized using a conventional ceramic fabrication method. Effect of Bi(Mg_0.5Ti_0.5)O₃ (BMT) substitution on room temperature (RT) crystal structure, and temperature dependence of electric properties were investigated. The XRD indicates that a pure perovskite phase is formed. The introduction of BMT decreases E_C of BNT from 7.3 to 4.0 kV/mm, and increases d₃₃ from 58 pC/N to 110 pC/N for the x = 0.05. The system shows a typical ferroelectric (FE) polarization loop P(E) and butterfly bipolar strain‐electric S(E) curve at RT. For the composition of 0.95BNT–0.05BMT antiferroelectric (AFE) phase appears near 80°C, characterized by a constricted P(E) loop and altered bipolar S(E) butterfly, and gradually prevails with increasing temperature. Temperature dependence of dielectric constant shows that T_C increases from 310°C for pure BNT to 352°C for the x = 0.05. The results indicate that the piezoelectric properties of BNT have been improved by means of Bi(Mg_0.5Ti_0.5)O₃ substitution.     

The Composition and Temperature‐Dependent Structure Evolution and Large Strain Response in (1−x)(Bi0.5Na0.5)TiO3−xBa(Al0.5Ta0.5)O3 Ceramics

The (1?x) (Bi_0.5Na_0.5)TiO₃?xBa(Al_0.5Ta_0.5)O₃((1?x)BNT‐xBAT) lead‐free piezoceramics was fabricated using a conventional solid‐state reaction method. The temperature and composition‐dependent strain behavior, dielectric, ferroelectric (FE), piezoelectric, and pyroelectric properties have been systematically investigated to develop lead‐free piezoelectric materials with large strain response for actuator application. As the BAT content increased, the FE order is disrupted resulting in a degradation of the remanent polarization, coercive field, and the depolarization temperature (T_d). A large strain of 0.36% with normalized strain d₃₃* = 448pm/V was obtained for the optimum composition x = 0.045 at room temperature. The bipolar and unipolar strains for the compositions x = 0.035 and x = 0.04 reach almost identical maximum values when the temperature is in the vicinity of their respective depolarization temperature (T_d). The Raman‐spectra analysis, macroscopic properties, thermal depolarization results, and temperature‐dependent relationships of both polarization and strain demonstrated that the origin of the large strain response for this investigated system is attributed to a field‐induced relaxor to FE phase transformation.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Photoluminescence and Temperature Dependent Electrical Properties of Er‐Doped 0.94Bi0.5Na0.5TiO3‐0.06BaTiO3 Ceramics

Er‐doped 0.94Bi_0.5Na_0.5TiO₃‐0.06BaTiO₃ (BNT‐6BT: xEr, x is the molar ratio of Er³⁺ doping) lead‐free piezoceramics with x = 0–0.02 were prepared and their multifunctional properties have been comprehensively investigated. Our results show that Er‐doping has significant effects on morphology of grain, photoluminescence, dielectric, and ferroelectric properties of the ceramics. At room temperature, the green (550 nm) and red (670 nm) emissions are enhanced by Er‐doping, reaching the strongest emission intensity when x = 0.0075. The complex and composition‐dependent effects of electric poling on photoluminescence also have been measured. As for electrical properties, on the one hand, Er‐doping tends to flatten the dielectric constant‐temperature (ε_r‐T) curves, leading to temperature‐insensitive dielectric constant in a wide temperature range (50°C–300°C). On the other hand, Er‐doping significantly decreases the ferroelectric‐relaxor transition temperature (T_F–R) and depolarization temperature (T_d), with the T_F–R decreasing from 76°C to 42°C for x = 0–0.02. As a result, significant composition‐dependent electrical features were found in ferroelectric and piezoelectric properties at room temperature. In general, piezoelectric and ferroelectric properties tend to become weaker, as confirmed by the composition‐dependent piezoelectric coefficient (d₃₃), planar coupling factor (k_p), and the shape of polarization‐electric field (P–E), current‐electric field (J–E), bipolar/unipolar strain‐electric field (S–E) curves. Furthermore, to understand the relationship between the T_F–R/T_d and the electrical properties, the composition of x = 0.0075 has been intensively studied. Our results indicate that the BNT‐6BT: xEr with appropriate Er‐doping may be a promising multifunctional material with integrated photoluminescence and electrical properties for practical applications.     

Relaxor Ferroelectric BaTiO3–Bi(Mg2/3Nb1/3)O3 Ceramics for Energy Storage Application

Perovskite solid solution ceramics of (1 ? x)BaTiO₃–xBi(Mg_2/3Nb_1/3)O₃ (BT–BMN) (x = 0.05–0.2) were synthesized by solid‐state reaction technique. The results show that the BMN addition could lower the sintering temperature of BT‐based ceramics. X‐ray diffraction results reveal a pure perovskite structure for all studied samples. Dielectric measurements exhibit a relaxor‐like characteristic for the BT–BMN ceramics, where broadened phase transition peaks change to a temperature‐stable permittivity plateau (from ?50°C to 300°C) with increasing the BMN content (x = 0.2), and slim polarization–electric field hysteresis loops were observed in samples with x ≥ 0.1. The dielectric breakdown strength and electrical resistivity of BT–BMN ceramics show their maxima of 287.7 kV/cm and 1.53 × 10¹³ Ω cm at x = 0.15, and an energy density of about 1.13 J/cm³ is achieved in the sample of x = 0.1.     

Temperature‐stable dielectric and energy storage properties of La(Ti0.5Mg0.5)O3‐doped (Bi0.5Na0.5)TiO3‐(Sr0.7Bi0.2)TiO3 lead‐free ceramics

A new type of (0.7?x)Bi_0.5Na_0.5TiO₃‐0.3Sr_0.7Bi_0.2TiO₃‐xLaTi_0.5Mg_0.5O₃ (LTM1000x, x = 0.0, 0.005, 0.01, 0.03, 0.05 wt%) lead‐free energy storage ceramic material was prepared by a combining ternary perovskite compounds, and the phase transition, dielectric, and energy storage characteristics were analyzed. It was found that the ceramic materials can achieve a stable dielectric property with a large dielectric constant in a wide temperature range with proper doping. The dielectric constant was stable at 2170 ± 15% in the temperature range of 35‐363°C at LTM05. In addition, the storage energy density was greatly improved to 1.32 J/cm³ with a high‐energy storage efficiency of 75% at the composition. More importantly, the energy storage density exhibited good temperature stability in the measurement range, which was maintained within 5% in the temperature range of 30‐110°C. Particularly, LTM05 show excellent fatigue resistance within 10⁶ fatigue cycles. The results show that the ceramic material is a promising material for temperature‐stable energy storage.     

Temperature‐Stable Relative Permittivity from −70°C to 500°C in (Ba0.8Ca0.2)TiO3–Bi(Mg0.5Ti0.5)O3–NaNbO3 Ceramics

Temperature‐stable relaxor dielectrics have been developed in the solid solution system: 0.45Ba_0.8Ca_0.2TiO₃–(0.55 ? x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃. Ceramics of composition x = 0 have a relative permittivity ?_r = 950 ± 15% over a wide temperature range from +70°C to 600°C. Modification with NaNbO₃ at x = 0.2 decreases the lower limiting temperature to ?70°C, but also decreases relative permittivity such that ?_r ~ 600 ± 15% over the temperature range ?70°C to 500°C. For composition x = 0.3, the low‐temperature dispersion in loss tangent, tan δ, (at 1 kHz) shifts to lower temperature, giving tan δ values ≤0.02 across the temperature range ?60°C to 300°C in combination with ?_r ~ 550 ± 15%. Values of dc resistivity for all samples are of the order of 10¹⁰ Ω m at 250°C and 10⁷ Ω m at 400°C.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

Large Strain Response and Fatigue‐Resistant Behavior in Ternary Bi0.5Na0.5TiO3–BaTiO3–Bi(Zn0.5Ti0.5)O3 Solid Solutions

A ternary solid solution (1 ? x)(0.88Bi_0.5Na_0.5TiO₃–0.12BaTiO₃)‐xBi(Zn_0.5Ti_0.5)O₃ (BNBZT, BNBZTx) was designed and fabricated using the traditional solid‐state reaction method. The temperature and composition dependence of dielectric, ferroelectric, piezoelectric, and fatigue properties were systematically investigated and a schematic phase diagram was proposed. The substitution with Bi(Zn_0.5Ti_0.5)O₃ was found to shift the phase transition (ferroelectric tetragonal to relaxor pseudocubic phase) to lower temperatures. At a critical composition x of 0.05, large electric‐field‐induced strain response with normalized strain S_max/E_max as high as 526 pm/V was obtained under a moderate field of 4 kV/mm around room temperature. The strain exhibited good temperature stability within the temperature range of 25°C–120°C. In addition, excellent fatigue‐resistant behavior was observed in the proposed BNBZT solid solution after 10⁶ bipolar cycles. These give the BNBZT system great potential as environmental friendly solid‐state actuator.     

Enhanced pyroelectric properties in (Bi0.5Na0.5)TiO3–BiAlO3–NaNbO3 ternary system lead‐free ceramics

High pyroelectric performance and good thermal stability of pyroelectric materials are desirable for the application of infrared thermal detectors. In this work, enhanced pyroelectric properties were achieved in a new ternary (1?x)(0.98(Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃–0.02BiAlO₃)–xNaNbO₃ (BNT–BA–xNN) lead‐free ceramics. The effect of NN addition on the microstructure, phase transition, ferroelectric, and pyroelectric properties of BNT–BA–xNN ceramics were investigated. It was found that the average grain size decreased as x increased to 0.03, whereas increased with further NN addition. The pyroelectric coefficient p at room temperature (RT) was significantly increased from 3.87 × 10^?8Ccm^?2K^?1 at x = 0 to 8.45 × 10^?8Ccm^?2K^?1 at x = 0.03. The figures of merit (FOMs), F_i, F_v and F_d, were also enhanced with addition of NN. Because of high p (7.48 × 10^?8Ccm^?2K^?1) as well as relatively low dielectric permittivity (~370) and low dielectric loss (~0.011), the optimal FOMs at RT were obtained at x = 0.02 with F_i = 2.66 × 10^?10 m/V, F_v = 8.07 × 10^?2 m²/C, and F_d = 4.22 × 10^?5 Pa^?1/2, which are superior to other reported lead‐free ceramics. Furthermore, the compositions with x ≤ 0.03 exhibited excellent temperature stability in a wide temperature range from 20 to 80°C because of high depolarization temperature (≥110°C). Those results unveil the potential of BNT–BA–xNN ceramics for infrared detector applications.     

New Lead‐Free (1 − x)(K0.5Na0.5)NbO3–x(Bi0.5Na0.5)ZrO3 Ceramics with High Piezoelectricity

For enhancing the piezoelectric properties of ceramics (Bi_0.5Na_0.5)ZrO₃ (BNZ) was used to partially substitute (K_0.5Na_0.5)NbO₃ (KNN). The addition of BNZ changes the symmetry of KNN ceramics from orthorhombic to tetragonal, and finally to rhombohedral phase. A new phase boundary with both rhombohedral–orthorhombic and orthorhombic–tetragonal phase transitions near room temperature is identified for KNN–0.050BNZ ceramics, where optimum electrical properties were obtained: d₃₃ = 360 pC/N, k_p = 32.1%, ε_r = 1429, tanδ = 3.5%, and T_C = 329°C. The results indicated a new method for designing high‐performance lead‐free piezoelectric materials.     

Orthorhombic‐pseudocubic phase transition and piezoelectric properties of (Na0.5K0.5)(Nb1−xSbx)‐SrZrO3 ceramics

0.96(Na_0.5K_0.5)(Nb_1?xSb_x)‐0.04SrZrO₃ ceramics with 0.0≤x≤0.06 were well sintered at 1060°C for 6 hours without a secondary phase. Orthorhombic‐tetragonal transition temperature (T_O‐T) and Curie temperature (T_C) decreased with the addition of Sb₂O₅. The decrease in T_C was considerable compared to that in T_O‐T, and thus the tetragonal phase zone disappeared when x exceeded 0.03. Therefore, a broad peak for orthorhombic‐pseudocubic transition as opposed to that for orthorhombic‐tetragonal transition appeared at 115°C‐78.2°C for specimens with 0.04≤x≤0.06. An orthorhombic structure was observed for specimens with x≤0.03. However, the polymorphic phase boundary structure containing orthorhombic and pseudocubic structures was formed for the specimens 0.04≤x≤0.06. Furthermore, a specimen with x=0.055 exhibited a large piezoelectric strain constant of 325 pC/N, indicating that the coexistence of orthorhombic and pseudocubic structures could improve the piezoelectric properties of (Na_0.5K_0.5)NbO₃‐based lead‐free piezoelectric ceramics.     

Remarkably High‐Temperature Stability of Bi(Fe1−xAlx)O3–BaTiO3 Solid Solution with Near‐Zero Temperature Coefficient of Piezoelectric Properties

The 0.72Bi(Fe_1?xAl_x)O₃–0.28BaTiO₃ (x = 0, 0.01, 0.03, 0.05, and 0.07, abbreviated as BFAx–BT) lead‐free high‐temperature ceramics were prepared by the conventional ceramic processing. Systematic investigation on the microstructures, crystalline structures, dielectric and piezoelectric properties, and high‐temperature stability of piezoelectric properties was carried out. The crystalline structures of BFAx–BT ceramics evolve from rhombohedral structure with x < 0.01 to the coexistence of rhombohedral structure and pseudocubic phases with x ≈ 0.01, finally to pseudocubic phases when x > 0.03. Remarkably high‐temperature stability with near‐zero temperature coefficient of piezoelectric properties (TCk_p), together with improved piezoelectric properties has been achieved for x = 0.01 BFAx–BT ceramics. The BFAx–BT(x = 0.01) ceramics simultaneously show the excellent piezoelectric properties of d₃₃ = 151 pC/N, k_p = 0.31 and super‐high‐temperature stability of T_d = 420°C, TCk_p = 1 × 10^?4. It is considered that the observed strong piezoelectricity and remarkably high‐temperature stability should be ascribed to the phase coexistence of rhombohedral and pseudocubic phases. The rhombohedral phases have a positive TCk_p value and the pseudocubic phases possess a negative TCk_p value. Thus, the TCk_p value of BFAx–BT ceramics can be tuned by composition of x.     

High strain (0.4%) Bi(Mg2/3Nb1/3)O3‐BaTiO3‐BiFeO3 lead‐free piezoelectric ceramics and multilayers

The relationship between the piezoelectric properties and the structure/microstructure for 0.05Bi(Mg_2/3Nb_1/3)O₃‐(0.95‐x)BaTiO₃‐xBiFeO₃ (BBFT, x = 0.55, 0.60, 0.63, 0.65, 0.70, and 0.75) ceramics has been investigated. Scanning electron microscopy revealed a homogeneous microstructure for x < 0.75 but there was evidence of a core‐shell cation distribution for x = 0.75 which could be suppressed in part through quenching from the sintering temperature. X‐ray diffraction (XRD) suggested a gradual structural transition from pseudocubic to rhombohedral for 0.63 < x < 0.70, characterized by the coexistence of phases. The temperature dependence of relative permittivity, polarization‐electric field hysteresis loops, bipolar strain‐electric field curves revealed that BBFT transformed from relaxor‐like to ferroelectric behavior with an increase in x, consistent with changes in the phase assemblage and domain structure. The largest strain was 0.41% for x = 0.63 at 10 kV/mm. The largest effective piezoelectric coefficient (d₃₃^*) was 544 pm/V for x = 0.63 at 5 kV/mm but the largest Berlincourt d₃₃ (148 pC/N) was obtained for x = 0.70. We propose that d₃₃^* is optimized at the point of crossover from relaxor to ferroelectric which facilitates a macroscopic field induced transition to a ferroelectric state but that d₃₃ is optimized in the ferroelectric, rhombohedral phase. Unipolar strain was measured as a function of temperature for x = 0.63 with strains of 0.30% achieved at 175°C, accompanied by a significant decrease in hysteresis with respect to room temperature measurements. The potential for BBFT compositions to be used as high strain actuators is demonstrated by the fabrication of a prototype multilayer which achieved 3 μm displacement at 150°C.     

Piezoelectric Property and Strain Behavior of Pb(Yb0.5Nb0.5)O3–PbHfO3–PbTiO3 Polycrystalline Ceramics

(1?x)Pb(Hf_1?yTi_y)O₃–xPb(Yb_0.5Nb_0.5)O₃ (x = 0.10–0.44, y = 0.55–0.80) ceramics were fabricated. The morphotropic phase boundary (MPB) of the ternary system was determined by X‐ray powder diffraction. The optimum dielectric and piezoelectric properties were achieved in 0.8Pb(Hf_0.4Ti_0.6)O₃–0.2Pb(Yb_0.5Nb_0.5)O₃ ceramics with MPB composition, where the dielectric permittivity ε_r, piezoelectric coefficient d₃₃, planar electromechanical coupling k_p, and Curie temperature T_c were found to be on the order of 1930,480 pC/N, 62%, and 360°C, respectively. The unipolar strain behavior was evaluated as a function of applied electric field up to 50 kV/cm to investigate the strain nonlinearity and domain wall motion under large drive field, where the high field piezoelectric d₃₃* was found to be 620 pm/V for 0.82Pb(Hf_0.4Ti_0.6)O₃–0.18Pb(Yb_0.5Nb_0.5)O₃. In addition, Rayleigh analysis was carried out to study the extrinsic contribution, where the value was found to be in the range 2%–18%.     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

Characterization of the High‐Temperature Ferroelectric (100−x−y)BiScO3–(x)Bi(Zr0.5Zn0.5)O3–(y)PbTiO3 Perovskite Ternary Solid Solution

Ternary compositions based on Bi(B′B″)O₃–PbTiO₃‐type compounds have been investigated for high‐temperature piezoelectric applications. Compositions in the ternary were chosen to be near the binary morphotropic phase boundary (MPB) composition of BiScO₃–PbTiO₃ (BS–PT). Ternary compositions in (100?x?y)BiScO₃–(x)Bi(Zr_0.5Zn_0.5)O₃–(y)PbTiO₃ [(100?x?y)BS–xBZZ–yPT] have been investigated with x ≤ 7.5. For compositions with x > 10, the Curie temperature (T_C) decreased below 400°C. Dielectric, piezoelectric, and electromechanical properties were characterized as a function of temperature, frequency, and electric field. Small additions of BZZ were shown to increase the electromechanical properties with only a small loss in T_C. The electromechanical properties were temperature stable up to the depoling temperature. The most promising composition exhibited a T_C of 430°C, piezoelectric coefficient (d₃₃) of 520 pC/N, and a planar coupling factor (k_p) of 0.45 that remained unchanged up to depoling temperature at 385°C.     

Large Electrostrictive Strain in (Bi0.5Na0.5)TiO3–BaTiO3–(Sr0.7Bi0.2)TiO3 Solid Solutions

Relaxor ferroelectrics (0.94 ? x)(Bi_0.5Na_0.5)TiO₃–0.06BaTiO_3?x(Sr_0.7Bi_0.2□_0.1)TiO₃ (BNT–BT–xSBT) (0 ≤ x ≤ 0.5), were prepared by a solid‐state reaction process, and their structures were characterized by the transmission electron microscopy and Raman spectroscopy. The BNT–BT–0.3SBT has a very high electrostrictive strain S = 0.152% with hysteresis‐free behavior, much more than the reported S in other ferroelectrics. S–P² profiles perfectly follow the quadratic relation, which indicates a purely electrostrictive effect with a high electrostrictive coefficient (Q₁₁) of 0.0297 m⁴/C². Even, its Q₁₁ keeps at a high level in the temperature range from ambient temperature to 180°C. The field‐induced large electrostrictive strain of BNT–BT–0.3SBT was attributed to the existence of ferroelectric nanodomains.