Low‐temperature sintering and enhanced piezoelectric properties of random and textured PIN–PMN–PT ceramics with Li2CO3

Low‐temperature sintered random and textured 36PIN–30PMN–34PT piezoelectric ceramics were successfully synthesized at a temperature as low as 950°C using Li₂CO₃ as sintering aids. The effects of Li₂CO₃ addition on microstructure, dielectric, ferroelectric, and piezoelectric properties in 36PIN–30PMN–34PT ternary system were systematically investigated. The results showed that the grain size of the specimens increased with the addition of sintering aids. The optimum properties for the random samples were obtained at 0.5 wt% Li₂CO₃ addition, with piezoelectric constant d₃₃ of 450 pC/N, planar electromechanical coupling coefficient k_p of 49%, peak permittivity ε_max of 25 612, remanent polarization P_r of 36.3 μC/cm². Moreover, the low‐temperature‐sintered textured samples at 0.5 wt% Li₂CO₃ addition exhibited a higher piezoelectric constant d₃₃ of 560 pC/N. These results indicated that the low‐temperature‐sintered 36PIN–30PMN–34PT piezoelectric ceramics were very promising candidates for the multilayer piezoelectric applications.     

Densification behavior and electrical properties of CuO-doped Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

CuO modified Pb(In_1/2Nb_1/2)O₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PMN–PT) ternary relaxor based ferroelectrics with the composition near the morphotropic phase boundary were synthesized by two-step columbite precursor method. The introduction of CuO significantly improved the sinterability of PIN–PMN–PT ceramics, resulting in the full densification of samples at lower sintering temperatures. It also profoundly modified the crystal structure and fracture mode of the ceramics. Properly increasing CuO content led to the disappearance of rhombohedral-tetragonal phase transition, remarkably improved the Curie temperature (T_c), and made the ceramics more relaxorlike. The ternary ceramics doped with 0.25 wt% CuO possessed optimum piezoelectric properties (d₃₃=584 pC/N, d₃₃^*=948 pC/N, and k_p=0.68), high ferroelectric properties (E_c=9.9 kV/cm, and P_r=33.1 μC/cm²), low dielectric loss (tan δ=0.9%), and wider temperature usage range (T_c=225 °C). The obtained properties are much higher than those of previously reported PIN–PMN–PT based ceramics, indicating that CuO doped PIN–PMN–PT is a promising candidate for electromechanical applications with high performance and wide temperature/electric field usage ranges.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

Perovskite‐Structured BiFeO3–Bi(Zn1/2Ti1/2)O3–PbTiO3 Solid Solution Piezoelectric Ceramics with Curie Temperature About 700°C

In this article, perovskite‐structured BiFeO₃–Bi(Zn_1/2Ti_1/2)O₃–PbTiO₃ (BF–BZT–PT) ternary solid solutions were prepared with traditional solid‐state reaction method and demonstrated to exhibit a coexistent phase boundary (CPB) with Curie temperature of T_C~700°C in the form of ceramics with microstructure grain size of several micron. It was found that those CPB ceramics fabricated with conventional electroceramic processing are mechanically and electrically robust and can be poled to set a high piezoelectricity for the ceramics prepared with multiple calcinations and sintering temperature around 750°C. A high piezoelectric property of T_C = 560°C, d₃₃ = 30 pC/N, ε₃₃^T/ε₀ = 302, and tanδ = 0.02 was obtained here for the CPB 0.53BF–0.15BZT–0.32PT ceramics with average grain size of about 0.3 μm. Primary experimental investigations found that the enhanced piezoelectric response and reduced ferroelectric Curie temperature are closely associated with the small grain size of microstructure feature, which induces lattice structural changes of increased amount ratio of rhombohedral‐to‐tetragonal phase accompanying with decreased tetragonality in the CPB ceramics. Taking advantage of structural phase boundary feature like the Pb(Zr,Ti)O₃ systems, through adjusting composition and microstructure grain size, the CPB BF–BZT–PT ceramics is a potential candidate to exhibit better piezoelectric properties than the commercial K‐15 Aurivillius‐type bismuth titanate ceramics. Our essay is anticipated to excite new designs of high–temperature, high–performance, perovskite‐structured, ferroelectric piezoceramics and extend their application fields of piezoelectric transducers.     

High temperature‐insensitive ferro‐/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 relaxor single crystals

For rhombohedral (R) Pb(In_1/2Nb_1/2)O₃–PbZrO₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PZ–PMN–PT) relaxor single crystal, high temperature‐insensitive behaviors under different external stimuli were observed (remnant polarization P_r from 30°C to 180°C and piezoelectric strain d₃₃* from 30°C to 116°C). When electric field E ≥ 50 kV/cm in the case of an activation field E_a = 40‐50 kV/cm was applied, it was found that the domain switching was accompanied by a phase transition. The high relaxor nature of the R phase PIN–PZ–PMN–PT was speculated to account for the large E_a and high piezoelectric response. The short‐range correlation lengths extracted from the out‐of‐plane (OP) and in‐plane (IP) nanodomain images, were 64 nm and 89 nm, respectively, which proved the high relaxor nature due to In³⁺ and Zr⁴⁺ ions entering the B‐site in the ABO₃‐lattice and enhancing the disorder of B‐site cations in the R phase PIN–PZ–PMN–PT. The switching process of R nanodomain variants under the step‐increased tip DC voltage was visually revealed. Moreover, the time‐dependent domain evolution confirmed the high relaxor nature of the R phase PIN–PZ–PMN–PT single crystal.     

Normal‐Relaxor‐Diffuse Ferroelectric Phase Transition and Electrical Properties of Bi(Mg1/2Ti1/2)3–PbZrO3–PbTiO3 Solid Solution Ceramics Near the Morphotropic Phase Boundary

Perovskite‐type xBi(Mg_1/2Ti_1/2)O₃–(0.56 ? x)PbZrO₃–0.44PbTiO₃ (xBMT–PZ–PT) ternary solid solution ceramics were synthesized via a conventional solid‐state reaction method. The phase transition behaviors, dielectric, ferroelectric, and piezoelectric properties were investigated as a function of the BMT content. The X‐ray diffraction analysis showed that the tetragonality of xBMT–PZ–PT was enhanced with increasing the BMT content, and a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was identified approximately in the composition of x = 0.08. In addition, the dielectric diffuseness and frequency dispersion behavior were induced with the addition of BMT and a normal‐relaxor‐diffuse ferroelectric transformation was observed from the PZ‐rich side to the BMT‐rich side. The electrical properties of xBMT–PZ–PT ceramics exhibit obviously compositional dependence. The x = 0.08 composition not only possessed the optimum properties with ε^T₃₃/ε₀ = 1450, Q_m = 69, d₃₃ = 390 pC/N, k_p = 0.46, P_r = 30 μC/cm², E_c = 1.4 kV/mm, T_c = 325°C, and a strain of 0.174% (d₃₃^* = 436 pm/V) under an electric field of 4 kV/mm as a result of the coexistence of two ferroelectric phases near the MPB, but also owned a good thermal‐depolarization behavior with a d₃₃ value of >315 pC/N up to 290°C and a frequency‐insensitive strain behavior.     

Low‐Temperature Sintering and Electric Properties of Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 Ferroelectric Ceramics with CuO Additive

The low‐temperature sintering and electric properties of Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ (PZTN 95/5) ferroelectric ceramics with CuO addition was investigated. The CuO addition significantly promoted the densification and reduced the sintering temperature of PZTN 95/5 ceramics by more than 200°C. The 0.2 wt% CuO‐added sample sintered at 1150°C exhibited the optimum relative density of 96.7% and excellent electric properties with values of P_r = 37.80 μC/cm², T_C = 223°C, ε_r = 329, and tan δ = 0.016, which were superior to that of PZTN 95/5 ceramics sintered at 1350°C.     

Pulse Electric Current–Aided Reactive Sintering of High‐Purity Zr3Al3C5

Herein, we report on the in situ reactive synthesis and simultaneous densification of a high‐purity ternary Zr₃Al₃C₅ phase via pulse electric current sintering (PECS) of Zr/Al/graphite powder mixtures with a molar ratio of 3:3.2:4.8. The phases and microstructure evolution in the 580°C–1800°C temperature range were characterized by X‐ray diffraction, real‐time sintering curves, and a scanning electron microscope equipped with an energy dispersive spectroscope. An additive‐free, fully dense Zr₃Al₃C₅ compound was obtained at 1800°C using a load corresponding to a stress of 35 MPa for 20 min. The final product was comprised of 96.61 wt% Zr₃Al₃C₅, 3.14 wt% ZrC, and 0.25 wt% Zr₂Al₃C₄; the relative density was 97%.     

Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films

Piezoelectric properties of screen‐printed thick films, 0.01Pb(Mg_1/2W_1/2)O₃–0.41Pb(Ni_1/3Nb_2/3)O₃–0.35PbTiO₃–0.23PbZrO₃ + 0.1 wt% Y₂O₃ + 1.5 wt% ZnO (PMW–PNN–PT–PZ+YZ) on alumina (Al₂O₃) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW–PNN–PT–PZ+YZ thick films, the Al₂O₃ buffer layers on silicon (Si) substrates were used. The Al₂O₃ buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW–PNN–PT–PZ+YZ thick films with 900 nm thick Al₂O₃ buffer layer showed piezoelectric properties such as P_r = 32 μC/cm², E_c = 25 kV/cm, and d₃₃ = 32 pC/N. These significant piezoelectric properties of our screen‐printed PMW–PNN–PT–PZ+YZ thick films by the Al₂O₃ buffer layers can be applied to functional thick film in many micro‐electromechanical system (MEMS) applications such as micro actuators and sensors.     

Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Structure‐Dependent Microwave Dielectric Properties and Middle‐Temperature Sintering of Forsterite (Mg1–xNix)2SiO4 Ceramics

The crystal structure, microstructure, and microwave dielectric properties of forsterite‐based (Mg_1–xNi_x)₂SiO₄ (x = 0.02–0.20) ceramics were systematically investigated. All samples present a single forsterite phase of an orthorhombic structure with a space group Pbnm except for a little MgSiO₃ secondary phase as x > 0.08. Lattice parameters in all axes decrease linearly with increasing Ni content due to the smaller ionic radius of Ni²⁺ compared to Mg²⁺. The substitution of an appropriate amount of Ni²⁺ could greatly improve the sintering behavior and produce a uniform and closely packed microstructure of the Mg₂SiO₄ ceramics such that a superior Q × f value (152 300 GHz) can be achieved as x = 0.05. The τ_f value was found to increase with increasing A‐site ionic bond valences. In addition, various additives were used as sintering aids to lower the sintering temperature from 1500°C to the middle sintering temperature range. Excellent microwave dielectric properties of ε_r~6.9, Q × f~99800 GHz and τ_f~?50 ppm/°C can be obtained for 12 wt% Li₂CO₃‐V₂O₅‐doped (Mg_0.95Ni_0.05)₂SiO₄ ceramics sintered at 1150°C for 4 h.     

Temperature and Frequency Dependence of Electric Field‐Induced Phase Transitions in PMN–0.32PT

Single crystal (1 ? x)Pb(Mg_1/3 Nb_2/3)O₃–xPbTiO₃ [PMN–xPT] (x = 0.32) is a relaxor‐ferroelectric material known to exhibit ‘giant’ piezoelectric behavior, with achievable strains in excess of 1% for samples of certain particular crystallographic orientations and chemical compositions close to the morphotropic phase boundary. In this study, we investigate the electric field‐induced structural phase transitions in single crystal PMN–0.32PT with time‐of‐flight neutron diffraction and macroscopic electrical polarization measurements, and show that both the frequency of the applied ac field and the temperature of the sample are critical factors in determining these phase transition fields.     

Low‐Temperature Sintering of Bi0.5(Na,K)0.5TiO3 for Multilayer Ceramic Actuators

We investigated the influence of CuO amount (0.5–3.0 mol%), sintering temperature (900°C–1000°C), and sintering time (2–6 h) on the low‐temperature sintering behavior of CuO‐added Bi_0.5(Na_0.78K_0.22)_0.5TiO₃ (BNKT22) ceramics. Normalized strain (S_max/E_max), piezoelectric coefficient (d₃₃), and remanent polarization (P_r) of 1.0 mol% CuO‐added BNKT22 ceramics sintered at 950°C for 4 h was 280 pm/V, 180 pC/N, and 28 μC/cm², respectively. These values are similar to those of pure BNKT22 ceramics sintered at 1150°C. In addition, we investigated the performance of multilayer ceramic actuators made from CuO‐added BNKT22 in acoustic sound speaker devices. A prototype sound speaker device showed similar output sound pressure levels as a Pb(Zr,Ti)O₃‐based device in the frequency range 0.66–20 kHz. This result highlights the feasibility of using low‐cost multilayer ceramic devices made of lead‐free BNKT‐based piezoelectric materials in sound speaker devices.     

Effect of dual liquid phase sintering aids on the densification and microstructure of low temperature sintered alumina ceramics

Alumina ceramics was prepared by pressureless sintering technology in which a CuO–TiO₂–Bi₂O₃ mixture (0–4.0 wt% Bi₂O₃ and 4.0 wt% CuO and TiO₂) was added as dual liquid phase sintering aids. The phase compositions, microstructural feature, and sintering behaviour of the alumina ceramics were analyzed. The results showed that adding 2.5 wt% Bi₂O₃ to alumina ceramics can increase the contribution rate of initial stage of sintering to the sintering process. The relative density of the sample reached 97.63% after sintering at 1200 °C for 90 min. Measurements from differential scanning calorimetry, with the addition of CuO–TiO₂–Bi₂O_3, demonstrated the formation of two liquid phase points, 827.4 and 936.8 °C. Notably, the solid solution temperature of TiO₂ and Al₂O₃ ceramics diminished thanks to the dual liquid phase sintering aids, and at the same time the activation energy required also dropped from 368.96 to 137.31 kJ/mol. Research indicates that the combined action of dual liquid phase sintering and solid-state reaction sintering has promoted the densification of alumina ceramics during the sintering process while at the same time inhibiting the growth of abnormal grains so that a homogeneous microstructure can be formed.     

Effect of BBS‐Based Frit on the Low Temperature Sintering and Electrical Properties of KNN Lead‐Free Piezoceramics

Using BaO–B₂O₃–SiO₂ (BBS)‐based frit as sintering aid, the K_0.49Na_0.51NbO₃ (KNN) + x wt% BBS (x = 1.0, 1.5, 2.0 and 2.5) lead‐free piezoelectric ceramics were successfully fabricated by solid‐state reaction method under low‐sintering temperature of 1000°C. The effect of BBS frit doping amount on the structure and electrical properties of the ceramics was investigated. The KNN ceramics with 1.5 wt% BBS frit showed optimal properties as follows: piezoelectric constant d₃₃ = 108 pC/N, planar electromechanical coupling coefficient k_p = 41%, mechanical quality factor Q_m = 225, relative dielectric constant ε_r = 410, dielectric loss tanδ = 0.57% and Curie temperature T_c = 400°C. This ceramic sample should be a good lead‐free candidate for actuators or high temperature sensors application due to its ultra‐low tanδ, relatively high Q_m and T_c.     

Large Piezoelectric Response and Polarization in Relaxor Ferroelectric PbTiO3–Bi(Ni1/2Zr1/2)O3

New binary system (1?x) PbTiO₃?xBi(Ni_1/2Zr_1/2)O₃ (PT–100x BNZ) with x ≤ 0.45 were synthesized via solid‐state reaction route. A morphotropic phase boundary (MPB) was identified around x = 0.40 by X‐ray diffraction (XRD) method. The ceramics with MPB composition exhibit enhanced ferroelectric properties. A large piezoelectric coefficient (d₃₃) up to 400 pC/N was obtained for the PT–40BNZ, which is comparable with the PbTiO₃–BiScO₃ (PT–BS, 450 pC/N).The frequency dependence of dielectric permittivity of PT–40BNZ shows characteristic of a strong relaxor feature and a transition temperature around 290°C (1 MHz). Temperature effect on the unipolar strain was also investigated. The present system with high d₃₃ is a competitive piezoelectric material, as no expensive oxide is used here compared with the PT–BS.     

Realizing the invariant electrostrain response and low hysteresis via multicomponent coordination in Pb-based ceramics

High-performance piezoelectric materials are essential in many piezoelectric devices. However, the composition of piezoelectric materials usually has a great influence on their performance. In this work, xBi(Mg_1/2Ti_1/2)O₃–yPbZrO₃–zPbTiO₃ (xBMT–yPZ–zPT; 0.2 ≤ x ≤ 0.4, 0.25 ≤ y ≤ 0.4, and 0.35 ≤ z ≤ 0.4) ternary ceramics with different compositions were synthesized and it was found that the strain response was not sensitive to the composition. The crystal structure, strain response, ferroelectric properties, and temperature stability of xBMT–yPZ–zPT ceramics were investigated in detail. X-ray diffraction patterns show that all the as-prepared xBMT–yPZ–zPT ceramics with x = 0.2, 0.3, 0.4, and 0.5 possess a perovskite structure. Under an external electric field of 6 kV mm⁻¹, the strain values of xBMT–yPZ–zPT ternary ceramics with x = 0.2, 0.3, 0.4, and 0.5 were 0.30%, 0.31%, 0.30%, and 0.27%, respectively. In addition, the strain hysteresis of these ternary ceramics is also almost the same and low. These merits make xBMT–yPZ–zPT piezoelectric ceramics have broad application prospects in the field of commercial actuators.     

Pressureless sintering of PMN–PT ceramics

PMN–PT ceramics with PMN to PT ratios of 60:40, 65:35, and 70:30 were prepared from PMN–PT powders synthesized by the columbite precursor method, and their sintering and grain growth characteristics at temperatures less than 1000°C were investigated. Results indicate that the PMN–PT ceramics can be pressureless-sintered to a relative density of approximately 96% at 950°C. However, full densification was prevented by the onset of abnormal grain growth. The addition of 0·5 wt% PbO to 65:35 PMN–PT ceramics lowered their sintering temperature to 900°C, but caused abnormal grain growth at lower temperatures. Preliminary TEM analyses indicate the presence of submicron-sized MgO particles at some ceramic microstructure triple points. Further studies will be required to understand abnormal grain growth behavior and to devise means for full densification.     

Enhancement of electrical properties in the ternary PMN–PT–PZ through compositional variation,crystallographic texture,and quenching

Ternary compositions of Pb(Mg_1/3Nb_2/3)O₃–PbZrO₃–PbTiO₃ (PMN–PZT) piezoelectric ceramic have been investigated with an aim to optimize the electrical properties for piezoelectric applications. Quenching from temperatures above the Curie point was proved to enhance the properties up to two folds in the 0.40PMN–0.25PZ–0.35PT composition. This enhancement is believed to have arisen as a result of the freezing of defect dipoles in their random distribution, and thus prevention of their domain pinning effect. Texturing the optimum composition using BaTiO₃ template particles through templated grain growth process and quenching the textured ceramic led to further enhancement with piezoelectric charge coefficient increasing from 190 to 750 pC/N, relative permittivity increasing from 860 to 1815 and remanent polarization increasing from 16 to 30 μC/cm².