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1.
The (1?x)BaTiO3xBi(Zn2/3Nb1/3)O3 (x = 0.01–0.30) ceramics were synthesized by solid‐state reactions. The solubility limit was determined to be x = 0.20. A systematic structural transition from a tetragonal phase (x ≤ 0.034), to a mixture of tetragonal and rhombohedral phases (0.038 ≤ x ≤ 0.20), and finally to a pseudocubic phase (x ≥ 0.22) at room temperature was identified. Dielectric measurement revealed a ferroelectric (x ≤ 0.04) to relaxor (x ≥ 0.06) transition with permittivity peak broadening and flattening, which was further verified by Raman spectroscopy and differential scanning calorimetry (DSC). Activation energies obtained from the Vogel–Fulcher model displayed an increasing trend from ~0.03 eV for x ~ 0.05, to unusually high values (>0.20 eV) for the compositions with x ≥ 0.15. With the increase in Bi(Zn2/3Nb1/3)O3 content, the polarization hysteresis demonstrated a tendency from high nonlinearity to sublinearity coupled with the reduction in remnant polarization and coervice field. The deconvolution of the irreversible/reversible polarization contribution was enabled by first‐order reversal curve distributions, which indicates that the decreasing polarization nonlinearity with the increase in Bi(Zn2/3Nb1/3)O3 concentration could be related with the change from the ferroelectric domain and domain wall contributions to the weakly coupled relaxor behaviors.  相似文献   

2.
Perovskite solid solution ceramics of (1 ? x)BaTiO3xBi(Mg2/3Nb1/3)O3 (BT–BMN) (= 0.05–0.2) were synthesized by solid‐state reaction technique. The results show that the BMN addition could lower the sintering temperature of BT‐based ceramics. X‐ray diffraction results reveal a pure perovskite structure for all studied samples. Dielectric measurements exhibit a relaxor‐like characteristic for the BT–BMN ceramics, where broadened phase transition peaks change to a temperature‐stable permittivity plateau (from ?50°C to 300°C) with increasing the BMN content (= 0.2), and slim polarization–electric field hysteresis loops were observed in samples with ≥ 0.1. The dielectric breakdown strength and electrical resistivity of BT–BMN ceramics show their maxima of 287.7 kV/cm and 1.53 × 1013 Ω cm at = 0.15, and an energy density of about 1.13 J/cm3 is achieved in the sample of = 0.1.  相似文献   

3.
Highly (100)‐oriented 0.38Bi(Ni1/2Hf1/2)O3‐0.62PbTiO3 relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO2/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm3 was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm3 obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni1/2Hf1/2)O3‐0.62PbTiO3 films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.  相似文献   

4.
A series of regular shaped Pb(Zn1/3Nb2/3)O3‐based ternary ferroelectric single crystals (1 ? x)Pb(In1/2Nb1/2)O3–0.33Pb(Zn1/3Nb2/3)O3xPbTiO3 (PIN–PZN–PT) have been grown by means of the top‐seeded solution growth method that prevented pyrochlore phase and promoted [001] or [111] growth. The nucleation and crystallization behavior of the Pb(Zn1/3Nb2/3)O3‐based ferroelectric single crystals differed from other relaxor‐based ferroelectric single crystals was discovered. Di‐/piezo‐/ferro‐/pyroelectric properties were characterized systematically. The PIN–PZN–PT single crystals showed large coercive fields Ec, high Curie temperature TC and high pyroelectric coefficient P, presenting similar performance but better thermal stability compared with the PZN–PT single crystals, and making it a promising material for transducers and IR detectors in a wider temperature range.  相似文献   

5.
The 0.45Bi(Mg0.5Ti0.5)O3–(0.55 ? x)PbTiO3x(Bi0.5Na0.5)TiO3 (BMT–PT–xBNT) ternary solid solution ceramics were prepared via a conventional solid‐state reaction method; the evolution of dielectric relaxor behavior and the electrostrain features were investigated. The XRD and dielectric measurements showed that all studied compositions own a single pseudocubic perovskite structure and undergo a diffuse‐to‐relaxor phase transition owing to the evolution of the domain from a frozen state to a dynamic state. The formation of the above dielectric relaxor behavior was further confirmed by a couple of measurements such as polarization loops, polarization current density curves, as well as bipolar strain loops. A large strain value of ~0.41% at a driving field of 7 kV/mm (normalized strain d33* of ~590 pm/V) was obtained at room temperature for the composition with x = 0.32, which is located near the boundary between ergodic and nonergodic relaxor. Moreover, this electric field‐induced large strain was found to own a frequency‐insensitive characteristic.  相似文献   

6.
This article details the influence of zirconium doping on the piezoelectric properties and relaxor characteristics of 94(Bi1/2Na1/2)TiO3–6Ba(ZrxTi1?x)O3 (BNT–6BZT) bulk ceramics. Neutron diffraction measurements of BNT–6BZT doped with 0%–15% Zr revealed an electric‐field‐induced transition of the average crystal structure from pseudo‐cubic to rhombohedral/tetragonal symmetries across the entire compositional range. The addition of Zr up to 10% stabilizes this transition, resulting in saturated polarization hysteresis loops with a maximum polarization of 40 μC/cm2 at 5.5 kV/mm, while corresponding strain hysteresis measurements yield a maximum strain of 0.3%. With further Zr addition, the ferroelectric order is progressively destabilized and typical relaxor characteristics such as double peaks in the current density loops are observed. In the strain hysteresis, this destabilization leads to an increase of the maximum strain by 0.05%. These changes to the physical behavior caused by Zr addition are consistent with a reduction of the transition temperature TF‐R, above which the field‐induced transformation from the relaxor to ferroelectric state becomes reversible.  相似文献   

7.
High–energy‐storage density capacitors with thin films of 0.5Bi(Ni1/2Ti1/2)O3–0.5PbTiO3 (BNT–PT) were fabricated by chemical solution deposition technique on Pt/Ti/SiO2/Si substrates. The dense thin films with pure‐phase perovskite structure could be obtained by annealing at 750°C. High capacitance density (~1925 nF/cm2 at 1 kHz) and extremely high‐energy density (~45.1 J/cm3) under an electric field of 2250 kV/cm were achieved at room temperature. The energy‐storage density and efficiency varied little in a wide temperature range from ?190°C to 250°C. The high–energy‐storage density and good temperature stability make BNT–PT films promising candidates for high power electric applications.  相似文献   

8.
By adopting Nb2O5, HNO3 and coordination agents EDTA as raw materials, pyrochlore‐free 0.64Pb(Ni1/3Nb2/3)O3–0.36PbTiO3(0.64PNN–0.36PT) powders were successfully synthesized via a combustion route. Free of pyrochlore phase was realized by the chelation formation of EDTA‐metal ions which isolate niobium and lead oxides and then prevent the formation of pyrochlore phases, therein generate the desired perovskite phases. Comparing the results with similar samples synthesized by the Columbite method, the new 0.64PNN–0.36PT ceramics here shown much better dielectric and ferroelectric performances: a maximum dielectric constant of 22 856 at 1 kHz and a remnant polarization of 21.6 μC/cm2 at 40 kV/cm.  相似文献   

9.
In this article, perovskite‐structured BiFeO3–Bi(Zn1/2Ti1/2)O3–PbTiO3 (BF–BZT–PT) ternary solid solutions were prepared with traditional solid‐state reaction method and demonstrated to exhibit a coexistent phase boundary (CPB) with Curie temperature of TC~700°C in the form of ceramics with microstructure grain size of several micron. It was found that those CPB ceramics fabricated with conventional electroceramic processing are mechanically and electrically robust and can be poled to set a high piezoelectricity for the ceramics prepared with multiple calcinations and sintering temperature around 750°C. A high piezoelectric property of TC = 560°C, d33 = 30 pC/N, ε33T0 = 302, and tanδ = 0.02 was obtained here for the CPB 0.53BF–0.15BZT–0.32PT ceramics with average grain size of about 0.3 μm. Primary experimental investigations found that the enhanced piezoelectric response and reduced ferroelectric Curie temperature are closely associated with the small grain size of microstructure feature, which induces lattice structural changes of increased amount ratio of rhombohedral‐to‐tetragonal phase accompanying with decreased tetragonality in the CPB ceramics. Taking advantage of structural phase boundary feature like the Pb(Zr,Ti)O3 systems, through adjusting composition and microstructure grain size, the CPB BF–BZT–PT ceramics is a potential candidate to exhibit better piezoelectric properties than the commercial K‐15 Aurivillius‐type bismuth titanate ceramics. Our essay is anticipated to excite new designs of high–temperature, high–performance, perovskite‐structured, ferroelectric piezoceramics and extend their application fields of piezoelectric transducers.  相似文献   

10.
A ternary ferroelectric ceramic system, (1?x?y)Pb(In1/2Nb1/2)O3xPb(Zn1/3Nb2/3)O3yPbTiO3 (PIN–PZN–PT, x = 0.21, 0.27, 0.36, 0.42), was prepared using a two‐step precursor method. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) was identified by X‐ray diffraction. The optimum piezoelectric and electromechanical properties were achieved for a composition close to MPB (0.5PIN–0.21PZN–0.29PT), where the piezoelectric coefficient d33, planar electromechanical coupling factor kp, and remnant polarization Pr are 660 pC/N,72%, and 45 μC/cm2, respectively. The Curie temperature TC and rhombohedral to tetragonal phase transition temperature TR?T were also derived by temperature dependence of dielectric measurements. The strongly “bended” MPB in the PIN–PT system was found to be “flattened” after addition of PZN in the PIN–PT–PZN system. The results demonstrate a possibility of growing ferroelectric single crystals with high electromechanical properties and expanded range of application temperature.  相似文献   

11.
A remarkable progress in the quest of lead‐free piezoceramics for actuator applications has been made with the development of incipient piezoceramics featured by giant strains. A drawback, however, is the high electric field required to generate this giant strain. A powerful approach to overcoming this drawback lies in relaxor/ferroelectric (FE) composites comprised such giant strain materials (matrix) and a FE or nonergodic relaxor (seed). In this study, we investigate the effect of K0.5Na0.5NbO3 content in the matrix and the volume ratio of seed to matrix using composites of 0.93Bi1/2Na1/2TiO3–0.07BaTiO3 as a seed and (0.94 ? x)Bi1/2Na1/2TiO3–0.06BaTiO3xK0.5Na0.5NbO3 as a matrix. The strain of all matrices, independent of their K0.5Na0.5NbO3 content, was found to be enhanced by adding a certain amount of seed. An optimum strain is achieved for the composite comprised of a matrix with x = 0.02 K0.5Na0.5NbO3 and 10% seed. By means of a differential analysis on the temperature‐dependent dielectric permittivity, it was shown that the seed phase is still present in the composites despite the naturally expected diffusion process during sintering.  相似文献   

12.
Lead‐free binary K1/2Bi1/2TiO3‐Bi(Mg1/2Ti1/2)O3 (KBT‐BMT) ferroelectric ceramics with a morphology of dense and evenly sized grains have been prepared by conventional solid oxide reaction route. X‐ray diffraction analysis indicates that all the samples possess pure perovskite structure, and undergo a phase transformation from tetragonal to pseudocubic phase as BMT adds into KBT. Meanwhile, BMT addition brings in the enhancement of the relaxor behavior as revealed by temperature‐dependent dielectric profiles and the P–E loops. The impedance analysis reveals that the relaxation process existing in the ceramics belongs to a localized species. Further, in the frequency‐dependent M(f) spectra, a shoulder response emerges accompanied by a bulk response as suitable amount of BMT is added, and its frequency dependence obeys Vogel–Fulcher relation f = f0 exp[ ‐ Eb/kB(TTVF)]. The shoulder response is believed to be the evidence of the existence of the polar nanoregions, which dominate the relaxor behavior of KBT‐BMT ceramics.  相似文献   

13.
The crystal structure and piezoelectric properties of (1?x)Pb(Zr1?yTiy)O3xPb(Zn0.4Ni0.6)1/3Nb2/3O3 [(1?x)PZ1?yTyxPZNN] ceramics were investigated. The 0.665PZ0.45T0.55‐0.335PZNN ceramic has the triple point composition, where the rhombohedral, pseudocubic, and tetragonal structures coexist. Maximum d33 and kp values of 770 pC/N and 0.69, respectively, were observed from this specimen; it also exhibited a large εT33/εo value of 3250. Although the maximum d33 value was obtained from the triple point composition specimen, its g33 and d33 × g33 values were relatively small because of its large εT33/εo value. However, the 0.665PZ0.46T0.54‐0.335PZNN ceramic, which has a rhombohedral structure, exhibited a large g33 value of 43 × 10?3 Vm/N and a d33 × g33 value of 27 000 × 10?15 m2/N. Therefore, this ceramic is a good candidate for multilayer actuators and piezoelectric energy harvesters.  相似文献   

14.
The (1?x)(0.8Bi1/2Na1/2TiO3–0.2Bi1/2K1/2TiO3)?xBiMg2/3Nb1/3O3 (100xBMN) ternary solid solutions were designed and prepared using a conventional solid‐state reaction. Temperature and compositional dependent ferroelectric, piezoelectric, dielectric features, and structural evolution were systematically studied. At the critical composition of 2BMN, a large bipolar strain of 0.43% was achieved at 55 kV/cm, and the normalized strain reaches to 862 pm/V at a low driving electric field of 40 kV/cm. It was found that the substitution of BiMg2/3Nb1/3O3 induces a transformation from ferroelectric to relaxor phase by disrupting the long range ferroelectric order. Therefore, as the external electric field was applied, a relaxor‐ferroelectric phase transition will be induced. This is contributed to the giant strain. The results above suggest that such a ternary composition is a promising candidate for application to actuator.  相似文献   

15.
The structural evolution and properties of 0.3Pb(In1/2Nb1/2)O3–0.38Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 (0.3PIN‐0.38PMN‐0.32PT) ferroelectric ceramics with different sintering times have been investigated. The content of the tetragonal phase is increased in samples sintered for more than 6 h, despite that the composition falls in the rhombohedral region of the previously established phase diagram. The results show that the metastable tetragonal phase at room temperature is induced and stabilized by the tensile residual stresses. Excessively long sintering time generally leads to grain coarsening, loss of lead, and deterioration of properties, while the increasing amount of the tetragonal phase, and the large residual tensile stress appear to improve the dielectric and electromechanical properties. This study offers new insights into the sintering of Pb‐based ferroelectric ceramics with complex compositions.  相似文献   

16.
Pb(Mg1/3Nb2/3)O3–PbTiO3 is used as a model system of perovskite solid solutions with very high piezoelectric response at tailored morphotropic phase boundaries to demonstrate the processing of textured ceramics by ceramic‐only technology. A novel homogeneous templated grain growth approach that uses conventional ceramic procedures and a single‐source nanocrystalline powder for the matrix and also for obtaining the templates is described. Two batches of (100) faceted cube‐shaped microcrystals with average sizes of 27 and 10 μm were successfully used as templates, and aligned by tape casting for the processing of <001>‐textured Pb(Mg1/3Nb2/3)O3–PbTiO3 piezoelectric ceramics. Materials with effective piezoelectric coefficients up to 1000 pC/N and ferroelectric properties approaching those of single crystals are obtained.  相似文献   

17.
In the high‐temperature ternary perovskite piezoelectric system xPbTiO3yBiScO3zBi(Ni1/2,Ti1/2)O3 (PT–BS–BNiT), the addition of bismuth to the A site and nickel to the B site leads to compositions that exhibit diffuse relaxor‐like behavior. For these, depolarization temperature, not Curie point, is the critical value of temperature. Depolarization temperature (Td) is defined as the temperature at which the steepest loss in polarization occurs. This temperature is observed in poled materials through two different methods: loss tangent measurements and in situ d33. Across the ternary system, multiple dielectric anomalies occurred which was observed in dielectric tests where the dielectric peak broadens and becomes frequency dependent as BNiT content increased. For different compositions, the value of Td ranged between 275°C–375°C. Values for the piezoelectric coefficient increased with temperature up to d33 = 1000 pC/N during in situ d33. High temperature (up to 190°C) and high field (up to 40 kV/cm) were also applied to test ferroelectric properties in these regimes.  相似文献   

18.
A novel lead‐free relaxor ferroelectric ceramic of (0.67?x)BiFeO3–0.33BaTiO3xBa(Mg1/3Nb2/3)O3 [(0.67?x)BF–0.33BT–xBMN,= 0–0.1] was prepared by a solid‐state reaction method. A relatively high maximum polarization Pmax of 38 μC/cm2 and a low remanent polarization Pr of 5.7 μC/cm2 were attained under 12.5 kV/mm in the = 0.06 sample, leading to an excellent energy‐storage density of W ~1.56 J/cm3 and a moderate energy‐storage efficiency of η ~75%. Moreover, a good temperature stability of the energy storage was obtained in the = 0.06 sample from 25°C to 190°C. The achievement of these characteristics was basically attributed to an electric field induced reversible ergodic to ferroelectric phase transition owing to similar free energies near a critical freezing temperature. The results indicate that the (0.67?x)BF–0.33BT–xBMN lead‐free realxor ferroelectric ceramic could be a promising dielectric material for energy‐storage capacitors.  相似文献   

19.
Ternary compositions based on Bi(B′B″)O3–PbTiO3‐type compounds have been investigated for high‐temperature piezoelectric applications. Compositions in the ternary were chosen to be near the binary morphotropic phase boundary (MPB) composition of BiScO3–PbTiO3 (BS–PT). Ternary compositions in (100?x?y)BiScO3–(x)Bi(Zr0.5Zn0.5)O3–(y)PbTiO3 [(100?x?y)BS–xBZZ–yPT] have been investigated with x ≤ 7.5. For compositions with x > 10, the Curie temperature (TC) decreased below 400°C. Dielectric, piezoelectric, and electromechanical properties were characterized as a function of temperature, frequency, and electric field. Small additions of BZZ were shown to increase the electromechanical properties with only a small loss in TC. The electromechanical properties were temperature stable up to the depoling temperature. The most promising composition exhibited a TC of 430°C, piezoelectric coefficient (d33) of 520 pC/N, and a planar coupling factor (kp) of 0.45 that remained unchanged up to depoling temperature at 385°C.  相似文献   

20.
A xPb(Zn1/3Nb2/3)O3–(1–x)Pb(Zr0.95Ti0.05)O3 (xPZN–(1–x) PZT) system close to antiferroelectric–ferroelectric (AFE–FE) morphotropic phase boundary has been prepared and investigated. The XRD results reveal PZN addition induces a phase transition from the orthorhombic (AFE) to rhombohedral (FE) phase through a phase coexistence region (AFE+FE). The polarization–electric field (P–E) measurements indicate that the AFE phase can be induced into a metastable FE (FEm) phase. And the FEm can recover to AFE around a critical temperature indicated by temperature‐dependent P–E loops. A composition‐temperature phase diagram was generalized within a certain range of PZN content in which an AFE–FE phase boundary connecting orthorhombic antiferroelectric to rhombohedral ferroelectric phase zones is formed near room temperature.  相似文献   

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