用于微机电系统的SiO2/Si3N4驻极体的制备及电荷稳定性

驻极体微型发电机是近期提出的微电子机械系统开发中的一个新领域,驻极体电荷稳定性则是影响驻极体微型发电机性能的关键.用等离子体增强化学气相沉积(PECVD)方法制备SiO2/ Si3N4双层膜,采用电晕充电和热极化方法对材料进行注极形成驻极体,探讨了器件加工工艺及存储环境对双层膜驻极体电荷稳定性的影响.结果表明,电晕充电后SiO2/ Si3N4双层膜的电荷存储稳定性明显优于SiO2单层膜;传统的电晕注极方法仅适用于大面积驻极体的制备,但对微米量级的材料表面不适用;微器件制备的工艺流程对驻极体电荷稳定性有显著影响,但存储环境对热极化驻极体电荷稳定性的影响很小.     

SiO_2薄膜的微观结构与驻极体特性的相关性研究

SiO2驻极体具有优异的电荷储存能力,其具有器件制作工艺可与微机械加工技术兼容、适合集成化生产等优点,一直是微器件和传感器领域研究的热点。采用电晕充电和表面电位测试等技术研究了等离子增强化学气相沉积(PECVD)和电子束蒸发两种方法制备的SiO2薄膜的驻极体特性,发现PECVD方法制备的SiO2薄膜的驻极体性能明显优于电子束蒸发制备的SiO2薄膜。结合扫描探针显微镜、X射线衍射及激光拉曼光谱等技术对两种薄膜的结构分析表明,其性能差异与薄膜形貌和微观结构密切相关。PECVD方法制备的非晶SiO2薄膜由纳米级非晶颗粒组成,颗粒间存在大量无序度较高的界面,由此产生的"界面陷阱"是导致PECVD制备的SiO2薄膜具有更佳电荷存储稳定性的根本原因。     

Si基多孔SiO2薄膜的驻极体性能

通过控制制备工艺条件和充电参数,利用相应条件下样品的等温表面电位衰减,开路热刺激放电电流谱等。考察了利用溶胶－凝胶（sol-gel)方法制备的Si基多孔SiO2薄膜的驻极体性能,分析了各种工艺参数与蓦主极体性质之间的联系,同时利用Gauss拟合及初始上升法对薄膜驻极体的电荷阱深度进行了估算,实验结果表明,反应物中水的含量对薄膜驻极体的陷阱分布具有调节作用,估算出负电晕充电SiO2薄膜驻极体电荷的活化能为0．3 eV和1．0eV;环境湿度对电荷储存稳定性有一定的影响,降低栅压可以提高SiO2薄膜驻极体的电荷储存稳定性。     

氟化乙丙烯共聚物薄膜驻极体电荷存储性能与电晕产生模式相关性

采用在直流稳态、高频脉冲和交变电场作用下的电晕放电对氟化乙丙烯共聚物(FEP)薄膜材料进行注极,通过等温表面电位测量和热刺激放电技术考察了FEP驻极体的电荷存储特性,依据电晕放电等离子体鞘层模型对实验结果进行了分析,研究了电晕产生模式对FEP薄膜驻极体电荷存储性能的影响。结果表明,电晕注极FEP薄膜驻极体的表面电位稳定性与电晕产生模式、电晕极性有关,但是电荷存储机制只与电晕极性有关。脉冲电晕注极时的稳定性优于稳态电晕注极,但其初始表面电位值较低。交变电场电晕注极获得的驻极体,呈现负极性。不同电晕放电模式在材料表面形成的等离子体鞘层的组成和厚度不同,是FEP驻极体性质不同的主要原因。     

原位无压烧结制备Si2 N2O-Si3 N4复相陶瓷

以Y2O3和Al2O3陶瓷粉体作为烧结助剂,原位无压液相烧结制备Si3N4-Si2N2O复相陶瓷,Si2N2O相通过SiO2 Si3N4 2Si2N2O反应生成.生坯采用注凝成型制备,然后在1780℃保温2h烧结,烧结体基本由板条状的Si2N2O及长柱状的β-Si3N4晶粒构成.Si2N2O陶瓷相对于Si3N4陶瓷而言,具有优异的抗氧化性能,低的弹性模量,以及低的热膨胀系数,因此,Si2N2O-Si3N4复相陶瓷结合了两者的优异性能,并大大提高了材料的热冲击性,材料的热冲击温差即使达到1200℃,其残余强度基本上没有变化.     

聚酰亚胺驻极体的平均电荷重心迁移及电荷的贮存

本文利用开路 TSD 电流谱讨论了电晕充电期间热处理对聚酰亚胺薄膜驻极体电荷贮存稳定性的影响,分析了恒压电晕充电期间电荷的建立过程,研究了延长注极时间及在不同温度下电晕充电的聚酰亚胺薄膜沉积电荷平均深度向背电极的迁移规律。     

Si3N4薄膜的表面微观特性

利用偏心静电单探针诊断了反应室内的等离子体密度的空间分布;在不同的工艺条件下制备了Si3N4薄膜,由STM和Telystep-Hobbso轮廓仪研究了ECR－PECVD制备的Si3N4薄膜的表面微观特性,分析了沉积温度对ECR－PECVD制备的Si3N4薄膜表面平整度特性影响的物理机理;结果表明ECR－PECVD制备的薄膜是一种表面均匀致密的纳米Si3N4薄膜。     

多孔PTFE/FEP复合驻极体膜的压电性研究

本文报道采用高温熔融粘合工艺和电晕注极方法制备了由多孔PTFE/FEP复合而成的空间电荷驻极体压电膜.根据Kacprzyk等人提出的复合驻极体膜的压电模型,结合等温表面电位衰减和压电系数衰减测量结果,研究了制备工艺对复合膜压电活性的影响.结果表明压电效应的大小不仅取决于捕获在材料中电荷密度的大小,还与被捕获电荷在材料中的存在形式和分布有关.     

无压烧结制备Si3N4/SiO2复合材料

以无压烧结工艺制备了Si3N4/SiO2复合材料.实验结果表明Si3N4颗粒对石英基体的析晶起到了抑制作用和增韧补强作用.Si3N4含量为5vol%的样品在1370℃烧结2h后,抗弯强度达到96.2MPa,断裂韧性为2.4MPa·m1/2,介电常数和介电损耗分别在3.63～3.68和1.29～1.75×10-3之间.     

Si3N4薄膜的成分与结构研究

通过PECVD方法,在Si基体表面制备了Si3N4薄膜,给出了XRD、TEM、AES、DPS的分析结果,表明Si3N4是非晶态结构,薄膜的主要成分是Si3N4,SEM分析结果显示Si3N4薄膜与基体材料的结合强度高,薄膜致密性好.     

Si／Si1—xGexHEMT结构设计的研究

从晶格匹配及能带阶跃角度讨论了n沟Si/Si1-xGexHEMT结构的设计原理及方法,对Ismail器件进行了分析和计算,所得二维电子气（2DEG）的n3与实验结果基本相符,并利用该设计理论对Ismail器件的异质结结构进行了优化改进,提高了器件2DEG的ns。     

Investigation of Si and Ge growth on Si3N4/Si

The growth of Si and Ge on silicon nitride surfaces has been investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectrometer (AES). In the early stages, Si or Ge nanoclusters appeared irrespective of the different substrates. When annealed, the Si clusters were more stable against coalescence than those of Ge. As these clusters continued to grow, crystalline facets started to form. Both Si and Ge islands grew predominantly with (111)-oriented top facets on the crystalline Si₃N₄(0001)/Si(111). By contrast, they both grew in random orientation on the amorphous Si₃N₄ surface. Low-index facets such as (111) and (001) coexisted with high-index facets such as (113).     

能隙阶梯缓变结构Si1-xGex/Si光电探测器

提出了一种新结构Ｓｉ１－ｘＧｅｘ／Ｓｉ光电探测器－能隙阶梯缓变结构的Ｓｉ１－ｘＧｅｘ／ＳｉＰＩＮ新近红外光电探测器。理论分析表明,能隙缓变增大了载流子的离化率。价带的不连续则有利于空穴离化,从而对载流子的收集有利,可获得高的光电响应。实验结果表明,该探测器具有良好的Ｉ－Ｖ特性,反向漏电低达０．１μＡ／ｍｍ＾２（－２Ｖ。该探测器主峰值波长在０．９６μｍ。其光电流响应随着反应偏压的增加有明显的增大,在     

Mechanics of patterned helical Si springs on Si substrate

The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.     

π-Electron systems containing Si=Si double bonds

Sterically large substituents can provide kinetic stabilization to various types of low-coordinate compounds. For example, regarding the chemistry of the group 14 elements, since West et al. introduced the concept of kinetic protection of the otherwise highly reactive Si=Si double bond by bulky mesityl (2,4,6-trimethylphenyl) groups in 1981, a number of unsaturated compounds of silicon and its group homologs have been successfully isolated by steric effects using the appropriate large substituents. However, the functions and applications of the Si–Si π-bonds consisting of the 3pπ electrons on the formally sp²-hybridized silicon atoms have rarely been explored until 10 years ago, when Scheschkewitz and Tamao independently reported the model systems of the oligo(p-phenylenedisilenylene)s (Si–OPVs) in 2007. This review focuses on the recent advances in the chemistry of π-electron systems containing Si=Si double bonds, mainly published in the last decade. The synthesis, characterization, and potential application of a variety of donor-free π-conjugated disilene compounds are described.     

Mg2Si／Si异质结的制备

采用射频磁控溅射和低真空退火方法制备Mg2Si／Si异质结,首先在n型Si（111）衬底上沉积Mg膜,经低真空退火形成Mg2Si／Si异质结,Mg膜厚度约为484nm,退火后形成的Mg2Si薄膜厚度约400nto,利用xRD和sEM分别研究了Mg2Si薄膜的晶体结构和表面形貌,霍尔效应结果表明,制备的Mg2Si薄膜呈现n型导电特性。     

Fe3Si formation in Fe–Si diffusion couples

Two different types of bulk diffusion couples for the Fe–Si system, i.e. Fe/Si and Fe/Fe3Si, have been studied, with emphasis placed on the formation and growth of Fe3Si. Results indicate that Fe3 Si forms initially in Fe/Si couples, followed by FeSi and then FeSi2. Fe3Si has a wide range of stoichiometry, from 10–25 at% Si; however, only stoichiometric Fe3Si appeared in Fe3Si diffusion layers of Fe/Si couples. Off-stoichiometric Fe3Si formed in Fe3Si/Fe couples. The free energy of Fe3Si and Fe–Si affinity are used to explain Fe3Si formation behaviour and the atomic diffusion mechanism in the Fe3Si lattice. © 1998 Kluwer Academic Publishers     

Tensile strain engineering of Si thin films using porous Si substrates

Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated by a simple and low-cost method based on the in-plane expansion of meso-porous silicon (PS) substrates upon low temperature oxidation. To control the film thickness below 100 nm, an original “two wafer” technique was employed during the porosification process. This method enables the fabrication of a 60 nm thick mc-Si films on 250 μm thick meso-porous silicon substrates over areas as large as 2 in. with a surface roughness and cleanliness comparable to that of standard Si wafers. Crack-free 60 nm thick Si films can be strained up to 1.2% by controlled low temperature oxidation of the PS substrate. Structural and strain analysis of the PS/mc-Si structures performed by transmission electron microscopy and micro-Raman scattering spectroscopy are reported.     

Ge–Si intermixing in Ge quantum dots on Si

We have provided direct evidence for the presence of considerable Si–Ge intermixing in strained and unstrained Ge quantum dots deposited on Si(001) and Si(111). The local structure around Ge was probed by using Ge K-edge X-ray absorption spectroscopy; complementary evidence for intermixing was provided by AFM and STM studies. These results implied that the strain energy in the dots was reduced by Si atoms diffusing into the dots, resulting in a modified form of Stranski–Krastanov growth.     

Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

The effect of carbon (C) and amorphous silicon (a-Si) thicknesses on the formation of SiC nanoparticles (np-SiC) in sandwiched Si/C/Si and C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering system and vacuum thermal annealing at 500, 700, 900 °C for 1.0 h. Three-layer a-Si/C/a-Si structures with thicknesses of 50/200/50 nm and 75/150/75 nm and a two-layer C/a-Si structure of 200/50 nm were examined in this study. The size and density of np-SiC were strongly influenced by the annealing temperature, a-Si thickness and layer number. Many np-SiC appeared at 900 °C at a density order about 10⁸ cm^− 2 in both three-layer structures while no particles formed in the two-layer structure. The thick a-Si structure (75/150/75 nm) produces a particle density approximately 1.8 times higher than thin structure (50/200/50 nm). This implies that thick a-Si structure had a lower activation energy of SiC formation compared to the thin a-Si structure. Few particles were found at 700 °C and no particles at 500 °C in both three-layer structures. The np-SiC formation is a thermally activated reaction. The higher temperature leads to higher particle density. A mechanism of np-SiC formation in thermodynamic and kinetic viewpoints is proposed.