Optical and electrical properties of E-Beam deposited TiO<Subscript>2</Subscript>/Si thin films

In this paper, optical and electrical properties of E-Beam deposited TiO₂/Si thin films have been studied and investigated extensively. The films were deposited on p-type (100) silicon wafer by using electron beam evaporation technique. The thickness of the thin films was measured by a spectroscopic reflectometer, which is about 216 nm. The fabricated titanium oxide (TiO₂) thin films were annealed at 800 °C for 1 h under N₂ ambient. X-ray diffraction measurements were performed to study the structure and phase identification of the fabricated TiO₂ thin films. For the optical properties, reflection, transmittance, refractive index and absorption coefficient were obtained and analyzed. The photocurrent and dark current of the fabricated films were measured by I–V measurements. The measurement of the current–voltage (I–V) characteristics possesses good ohmic contact. The electrical characterizations of the films were performed in the range of the low frequencies (50 and 100 kHz) and high frequencies (750 kHz and 1 MHz) by the capacitance–voltage and conductance–voltage measurements at room temperature. The capacitance of the fabricated TiO₂ MOS capacitor at both high and low frequencies increases with the decrease in frequencies. The obtained conductance curves (peaks) increase with the decreasing in the frequencies. This can be due to the interface state density, series resistance and interfacial dielectric of the fabricated MOS capacitors. The variation in the characteristics of the fabricated film shows that TiO₂ is a promising candidate to be used in the optoelectronic and future UV detector applications as a switch, such as an optical amplifier, emitter, and UV light detectors.     

Electrical and optical properties of TiO<Subscript>2</Subscript> and TiO<Subscript>2</Subscript>:Fe thin films

TiO₂ and TiO₂:Fe thin films have been grown by electron beam evaporation and the influence of doping and heat treatment on their electrical and optical properties has been studied.     

Synthesis and characterization of nanocrystalline TiO<Subscript>2</Subscript> thin films

Nanocrystalline thin films of TiO₂ have been synthesized by sol gel spin coating technique Thin films of TiO₂ annealed at 700 °C were characterized by X-ray diffraction(XRD), Atomic Force Microscopy, High resolution TEM and Scanning Electron Microscopy (SEM), The XRD shows formation of tetragonal anatase and rutile phases with lattice parameters a = 3.7837 Å and c = 9.5087 Å. The surface morphology of the TiO₂ films showed that the nanoparticles are fine with an average grain size of about 60 nm. Optical studies revealed a high absorption coefficient (10⁴ cm^?1) with a direct band gap of 3.24 eV. The films are of the n type conduction with room temperature electrical conductivity of 10^?6 (Ω cm)^?1.     

Photoinduced properties of nanocrystalline TiO<Subscript>2</Subscript> sol-gel derived thin films

In this paper, nanostructure TiO₂ thin films were deposited on glass substrates by sol-gel dip coating technique. X-ray diffraction and Fourier transform infrared spectroscopy were used to determine film behaviour. The super-hydrophilicity was assessed by contact angle measurement. Photocatalytic properties of these films were evaluated by degradation of methylene blue under UV irradiation. The XRD pattern of TiO₂ powder samples confirmed the presence of polycrystalline anatase phase with a crystal size of 17 nm. The results indicated that UV light irradiation had significant effect on super-hydrophilic and photocatalytic properties of TiO₂ thin films.     

Fabrication of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> double layer thin films with self-cleaning and photocatalytic properties

Transparent antireflective SiO₂/TiO₂ double layer thin films were prepared using a sol–gel method and deposited on glass substrate by spin coating technique. Thin films were characterized using XRD, FE-SEM, AFM, UV–Vis spectroscopy and water contact angle measurements. XRD analysis reveals that the existence of pure anatase phase TiO₂ crystallites in the thin films. FE-SEM analysis confirms the homogeneous dispersion of TiO₂ on SiO₂ layer. Water contact angle on the thin films was measured by a contact angle analyzer under UV light irradiation. The photocatalytic performance of the TiO₂ and SiO₂/TiO₂ thin films was studied by the degradation of methylene blue under UV irradiation. The effect of an intermediate SiO₂ layer on the photocatalytic performance of TiO₂ thin films was examined. SiO₂/TiO₂ double layer thin films showed enhanced photocatalytic activity towards methylene blue dye.     

Synthesis and characterization of CeO<Subscript>2</Subscript> thin films deposited by spray pyrolysis

Cerium dioxide (CeO₂) thin films were deposited on glass substrates by spray pyrolysis using a solution of alcohol–water and CeCl₃ · 7H₂O as precursor. The structural, morphological, optical and electrical properties of these films were investigated. SEM images reveal the presence of cracks in the films that depend on substrate temperature and deposition time. Films deposited in temperatures between 400 and 500 °C during up to 10 min are crack free and also present high optical transmittance, reaching up to 90% in the visible range and close to infrared. X-ray diffraction shows that all films are polycrystalline and the growth preferential direction is altered from (111) to (200) with the increase of the deposition temperature. The activation energy of the electrical conduction process is 0.67 ± 0.03 eV.     

Effect of V<Subscript>2</Subscript>O<Subscript>5</Subscript> content on the optical,structural and electrochromic properties of TiO<Subscript>2</Subscript> and ZrO<Subscript>2</Subscript> thin films

Vanadium oxide (V₂O₅) mixed titanium oxide (TiO₂) and zirconium oxide (ZrO₂) thin films were fabricated on glass substrates (corning 2947) and on indium tin oxide (ITO) coated glass substrates by sol gel spin coating process. Their optical, structural and electrochromic properties were investigated. The results were compared with pure TiO₂ and ZrO₂ thin films. Mixture of V₂O₅ with both types of film reduces the transmittance at the higher wavelengths. The refractive index of the V₂O₅ mixed TiO₂ and ZrO₂ films increases when compared with pure TiO₂ and ZrO₂ films. AFM images demonstrate no significant topographical changes for V₂O₅ mixed TiO₂ whereas for V₂O₅ mixed ZrO₂ films a topographical change is observed. V₂O₅ mixed TiO₂ showed slight increase in their charge capacity.     

Preparation of La<Subscript>2</Subscript>NiMnO<Subscript>6</Subscript> thin films on Pt/TiO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/Si substrates by pulsed laser deposition

Double perovskite La₂NiMnO₆ thin films were prepared on Pt/TiO₂/SiO₂/Si substrates by the pulsed laser deposition process, and the crystal structure and microstructures were investigated. The temperature and the oxygen pressure played the primary roles dominating the crystallization behavior and the morphology of La₂NiMnO₆ thin films. The well crystallized La₂NiMnO₆ thin films could be obtained at 873 and 923 K under all oxygen pressures investigated here, and the fine morphology was obtained under the oxygen pressures equal to or higher than 50 and 100 Pa, respectively, while phase constitution was significantly affected by the oxygen pressure for La₂NiMnO₆ thin films prepared at 1,023 K where the higher oxygen pressure led to the appearance of some secondary phase.     

Electrical behavior of Y-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> thin films

Ba_0.6Sr_0.4TiO₃ (BST) and 1.5 at% Y-doped Ba_0.6Sr_0.4TiO₃ (Y-BST) thin films have been deposited on single-crystal (100) oriented LaAlO₃ substrates using pulsed-laser deposition technique (PLD), respectively. X-ray diffraction (XRD) scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases, but Y-BST thin films showed an enhanced crystallization effect. The dielectric properties of the pure and Y-BST thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the addition of Y as an acceptor doping is very effective to increase dielectric tunability, and to reduce leakage current of BST thin films. The figure-of-merit (FOM) factor value increases from 17.32 for BST to 25.84 for Y-BST under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a negative bias field of 300 kV/cm decreases from 2.45 × 10⁻⁴ A/cm² to 1.55 × 10⁻⁶ A/cm² by Y doping. The obtained results indicated that the Y-doped BST thin film is a promising candidate material for tunable microwave devices.     

Study on the reduction of highly porous TiO<Subscript>2</Subscript> precursors and thin TiO<Subscript>2</Subscript> layers by the FFC-Cambridge process

Reduction of porous titanium oxide precursors by the FFC-Cambridge process is reported in this paper. Porous TiO₂ precursors were prepared by mixing the powder with different concentrations of graphite and polyethylene as fugitive agents and sintered at 1,073 K. The maximum porosity achieved before the mixture saturation was approximately 75%. After the electro-deoxidation by the FFC-Cambridge process, shrinkage of approximately 40% in volume and increase in porosity were observed, which might be due to atomic rearrangement, change of density and subsequent grain growth during reduction. The potential applied (below the decomposition potential of CaCl₂) had a direct effect on the minimum level of oxygen achieved, which was approximately 3,000 ppm for 48 h at 3.00 V and the same level at half the time (24 h) when increasing potential to 3.15 V. On the other hand, thin layers (300 μm thickness) screen-printed on titanium foils showed shorter reduction time than that observed for thicker porous pellets. This led to the conclusion that cathode geometry (porosity and thickness of the pellet) might have an effect on the rate of reduction by increasing the surface area available and improving the mass diffusion of oxygen ions.     

Enhanced optical and hydrophilic properties of Si and Cd co-doped TiO<Subscript>2</Subscript> thin films

In this study, preparation of Si and Cd co doped (5 mol% Si and 5–20 mol% Cd) TiO₂ dip-coated thin films on glass substrates via sol–gel process have been investigated. The samples were characterized by X-ray diffraction (XRD) and Scanning electron microscopy analysis after heat treatments. XRD results suggested that adding dopants has a great effect on crystallinity and particle size of TiO₂. Titania rutile phase formation was inhibited by Si⁴⁺ and promoted by Cd²⁺ doping. But the effect of Cd doped appeared at high concentration. Accordingly, the thin films showed various water contact angles. The water contact angles changed from 69.0° to 9.6° by changing the content of Cd doped.     

Photoelectrochemical applications of In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films by chemical deposition

Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In₂Se₃| NaOH(1 M) + S(1 M) + Na₂S(1 M) |C_(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current–voltage and capacitance–voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In₂Se₃ thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 μA, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.     

Structural,optical and microscopic properties of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films

Solar cell technologically important binary indium selenide thin film has been developed by relatively simple chemical method. The reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature gives deposits In₂Se₃ thin film. Various preparative parameters are discussed. The as grown films were found to be transparent, uniform, well adherent, red in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, Energy dispersive atomic X-ray diffraction, optical absorption and electrical conductivity properties. The direct optical band gap value E_g for the films was found to be as the order of 2.35 eV at room temperature and having specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications considering the optoelectric and structural data obtained.     

Characterization of ZrO<Subscript>2</Subscript> thin films deposited by MOCVD as ceramic coatings

Transparent cubic-, tetragonal-zirconia thin films were successfully deposited on glass and quartz substrates by using the metalorganic chemical deposition technique. The thin films were achieved by adjusting deposition parameters such as substrate temperature, oxygen partial pressure, and zirconium acetylacetonate (Zr(acac)₄) used as precursor. Structural and morphological characterizations of the as-deposited thin films were studied by XRD, Raman spectroscopy, SEM, and AFM techniques, while some optical properties such as transmittance and refractive index were determined by means of the UV–vis technique. The ZrO₂ films, grown at 700 °C and different P_{\textO 2} :P_{\textZr(acac)4} P_{{{\text{O}}_{ 2} }}{:}P_{{\text{Zr(acac)}_{4} }} ratios, displayed very variable particle sizes ranging from ~0.2 to 1.0 μm, and crystallite sizes within 10–30 nm forming a uniform film. Low mean roughness was obtained in the samples, which varied from 0.674 to 1.33 nm. These films grew with a columnar structure and apparently with low carbon content (<0.2%). All the synthesized thin films showed an adequate optical transmission, but the most transparent (>80%) was obtained with a P_{\textO 2} :P_{\textZr(acac)4} P_{{{\text{O}}_{ 2} }} {:}P_{{\text{Zr(acac)}_{4} }} ratio of (Pa) 107:0.2. The oxygen partial pressure influences the crystallinity of the as-deposited films, while the refractive index remains constant.     

Effect of formaldehyde gas adsorption on the electrical conductivity of Pd-doped TiO<Subscript>2</Subscript> thin films

0.5 wt% Pd-doped titanium oxide thin films were obtained by dip-coating on silicon substrates. The films were compacted by annealing in air at 300 and 500 °C. Temperature dependent electrical conductivity measurements were performed in the temperature range 373–623 K, in different environments (air, methane, acetone, ethanol, formaldehyde and liquefied petroleum gas), to test the films sensing gas properties. Formaldehyde was found to be the test gas that produces the most significant changes in the electrical conductivity of the studied films. This was the reason why it was chosen to investigate its effect on their electrical conductivity. A model was proposed, the model of the potential fluctuations at grain boundaries. A comparison between some parameters obtained in the proposed model was performed as a function of annealing temperature, and as a function of gas atmosphere. The values of the mean barrier height and the standard deviation were estimated to range between 0.336–0.588 eV and 0.175–0.199 eV, respectively. It was found that formaldehyde leads to a rather sharp decrease in the values of the barrier height and the standard deviation, and to an increase in the conductivity. We have observed the best sensing gas performance for the films annealed at 300 °C, comparing to their counterparts annealed at 500 °C, explained by the lowest values of the barrier energy height and the standard deviation.     

Visible light photocatalytic degradation of paraoxon and parathion pesticides on carbon-doped TiO<Subscript>2</Subscript> nanorod thin films

In the present work the nanostructured carbon-doped TiO₂ thin films with nanorod morphology were deposited on glass substrate by a combination of ultrasonic and chemical vapor deposition methods, and for the first time were applied for the photocatalytic degradation of paraoxon and parathion organophosphorus pesticides under visible light irradiation. X-ray Diffraction, X-ray photoelectron spectroscopy, diffuse reflectance spectroscopy, and scanning electron microscopy techniques were used for characterization of the prepared thin films. Obtained results show that presence of carbon element and also special nanorod morphology of the thin films remarkably improve the optical properties of TiO₂ in visible light region and results in the good visible light photocatalytic activity of the thin films for degradation of the pesticides. The photonic efficiencies of the prepared thin films were also examined based on the international ISO-10678:2010 standard protocol for photocatalytic degradation of methylene blue under UV light irradiation. The results show a maximum photonic efficiency of 0.0312% for the carbon-doped TiO₂ thin film with 570 nm thickness, which compared to a reference standard TiO₂ films indicates a 30% improvement in photonic efficiency.     

Properties of nickel doped In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films deposited by spray pyrolysis technique

In this work, nickel (Ni) doped indium sulfide (In₂S₃) films have been prepared by the spray pyrolysis (CSP) technique on glass substrates at 350 °C. The Ni doping level was changed with Ni:In (0, 2 and 4% in solution). The structural studies reveal that the deposited films are polycrystalline in nature exhibiting cubic structure. The crystallite size decreases from 27.5 to 23 nm and the root mean square roughness values increase from 13 to 18 nm. The transmission coefficient is about 70–55% in the visible region and 85–75% in near-infrared region. The band gap energy increases with nickel content from 2.74 to 2.82 eV for direct transitions. The refractive index values of In₂S₃:Ni thin films decrease from 2.43 to 2.40 and the extinction coefficient values are in the range 0.01–0.20. Besides, the AC conductivity contribution is interpreted using the universal Jonscher’s power law and it is found thermally activated and it can be described by the correlated barrier-hopping models. These studies help to form significant correlation between temperature and activation energy. Nyquist plots show that the electrical response is accurately fitted by the Cole–Cole model and represented by an equivalent electrical circuit which consists of a parallel combination of a resistance and a constant phase element. From this analysis, the evidence of grain boundary conduction has been observed.     

Structural,optical and microscopic properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> thin films

Mo_0.5W_0.5Se₂ thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10⁻⁵ (Ωcm)⁻¹.     

ZrO<Subscript>2</Subscript> thin films on Si substrate

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO₂ as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO₂ (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO₂ as high-κ dielectrics replacing SiO₂ is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO₂ thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.     

Fabrication and properties of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> composites

Composites in the form of precipitated powders, hybrid xerogels, and SiO₂ core/TiO₂ shell particles have been produced via hydrolysis of precursors (alkoxides and inorganic derivatives of titanium and silicon) and have been characterized by differential thermal analysis, X-ray diffraction, adsorption measurements, and macroelectrophoresis. The results demonstrate that heat treatment of the composites leads to crystallization of the titanium-containing component and, accordingly, reduces their specific surface area. Hydrothermal treatment enables the fabrication of materials in which TiO₂ nanocrystals are evenly distributed over an amorphous SiO₂ matrix.