基于嵌入式视频服务器的综合监控系统

基于嵌入式视频服务器的综合监控系统以Internet为依托,引入模块化设计,突破了传统监控系统在监控地点上的限制,可以方便地实现异地监视和控制。介绍了嵌入式视频服务器以太网接口、视频处理、微处理器、远程控制、微处理器软件开发等几个组成模块。基于嵌入式视频服务器的综合监控系统可广泛应用于电信、银行、智能大厦、家庭的远程监控等领域。     

基于嵌入式技术的网络视频监控系统

视频监控系统经历了本地模拟信号监控系统、基于PC插卡的数字监控系统、基于嵌入式技术的网络数字监控系统等发展过程。基于嵌入技术的监控系统不需处理模拟视频信号PC，而是把摄像机输出的模拟视频信号通过嵌入式视频编码器直接转换成IP数字信号。嵌入式视频编码器具备视频编码处理、网络通信、自动控制等强大功能，直接支持网络视频传输和网络管理，使得监控范围达到前所未有的广度。除了编码器外，还有嵌入式解码器、控制器、录像服务器等独立的硬件模块，它们可单独安装，不同厂家设备可实现互连。数字化视频监控的优点在于克服了模…     

嵌入式Internet及其在监控系统上的应用

介绍了嵌入式Internet的实现方法，并给出了以嵌入式linux作为操作系统，采用32位微处理器的嵌入式Internet在工业监控系统上实现的设计方案。本方案中采用流行的B／S结构，使用户在任何地方通过浏览器就可以实现对工业现场设备进行监控。     

基于嵌入式web服务器远程监控技术的研究

本文介绍了一种基于嵌入式Web服务器的远程监控系统,该系统采用嵌入式Internet技术、计算机网络技术,实现在局域网乃至Internet网上对远程设备的实时监控.     

嵌入式Web技术在智能温室监控系统中的应用

探讨了基于Linux的嵌入式Web Server系统在温室设备监控系统中的应用。提出一种基于嵌入式和Web技术的温室设备监控系统方案,使管理者可以通过Internet利用Web浏览器完成对远程设备的访问、监控和维护等操作,无需安装特定软件,具有跨平台性,有效解决利用有限资源实现设备的网络接入问题。实际运行效果表明该系统具有良好的稳定性与实时性,具有实际应用和推广价值。     

基于ARM技术的无线视频监控系统设计

随着嵌入式技术以及无线通信技术的发展,无线视频监控领域进入了一个崭新的发展时期。基于嵌入式技术的视频监控技术是一种先进技术,为视频监控设备的设计开发提供了一种全新解决方案。目前,采用无线网络技术的视频监控系统依靠其更低廉的价格、更加灵活的部署方式得到广大视频监控用户的青睐,逐渐成为视频监控技术的发展方向之一。在此结合嵌入式技术和无线视频监控技术,提出了一种基于嵌入式技术的无线智能视频监控系统解决方案。     

基于MCU的嵌入式Internet技术与网关实现

嵌入式技术和Internet技术的发展，使得嵌入式设备也能够接入Internet网。为此，文中介绍了嵌入式Internet技术的基本原理和实现方案，讨论了MCU应用系统接入Internet网的通信协议。针对嵌入式Internet技术将在实际应用中的技术难点，提出了一种嵌入式网关的设计方案，利用该方案可嵌入式系统通过以太网接入Internet网络中。     

基于H．264的嵌入式网络监控系统

嵌入式网络视频监控系统是一种以嵌入式技术、视频压缩编码技术和网络传输控制技术为核心的新型视频监控系统,它在稳定性、实时性、处理速度、功能、价格、扩展性等方面与传统的视频监控系统相比有着突出的优势。本文设计了一种以S3C2410微处理器和嵌入式Linux操作系统为核心的先进视频监控系统设备。     

基于Web服务的嵌入式视频服务器

为了解决视频监控系统中多样性、异构性的设备集成难问题,采用Web服务与流媒体技术设计了一种嵌入式视频服务器。给出视频服务器的硬件结构;基于嵌入式Linux操作系统,详细阐述了视频服务器软件的设计与实现过程;视频服务器适用于具有跨语言、跨平台特性的视频监控系统的设备集成。应用于油井监控局域网中时,在单个远程终端链接情况下,视频服务器速率达25 f/s,可满足一般的监控要求。     

嵌入式视频网络控制器设计与实现

随着视频监控系统数字化、网络化和智能化的不断发展,其核心部件视频网络控制器的性能需求也越来越高。在此结合嵌入式软、硬件技术,基于PC-104硬件平台,采用定制嵌入式Linux操作系统,在Eclipse开发环境下进行软件开发,设计并实现了嵌入式视频网络控制器。采用面向对象编程思想,实现了为各类设备提供统一接口。能够为视频监控系统提供一种高可靠、低成本、小体积、低功耗、通用并可扩展的智能产品。经实际项目应用表明,该设备能够满足不同种类、不同厂家视频设备的互连互控,具有较高性能指标,非常适合轨道交通视频监控等领域。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.