高频声表面波压控（调频）振荡器的研制

本文讨论了声表面波压控(调频)振荡器的原理及设计方法,并实际制作了振荡器,中心频率为657MHz,频偏约为1.5×10~(-3),平均压控灵敏度为98kHz/V,线性度±2%,温度稳定度为±3.7×10~(-5)(-20—+60℃)。     

一种声表面波直接频率合成器

介绍了采用声表面波技术的一种直接频率合成器.在L波段单边带相位噪声Lm(1 kHz)=-119 dBc/Hz,频率切换时间＜0.5 μs,杂散电平＜-60dBc,可切换输出频率达几十点.该频率合成器工作温度为-55～+85℃,体积164 mm×90 mm×50 mm,并且通过了产品各项环境试验考核,工作稳定.     

影响声表面波振荡器的频率稳定性因素分析

本文阐述了影响声表面波振荡器频率稳定性的主要因素;探讨了改善声表面波振荡器频率稳定性的方法。     

声表面波调频振荡器

论述了声表面波调频振荡器的原理及设计方法，探讨了有关电路，并制作了中心频率３８０．８ＭＨｚ的声表面波调频振荡器。当调制信号频率区ＤＣ至８００ｋＨｚ变化，幅值为２．５Ｖ时，调频频偏大于５５０ｋＨｚ；当调制信号频率小于或等于２００ｋＨｚ，幅值为１．０Ｖ时，调频非线性失真小于３．５％。振荡器经过温度补偿，温度稳定性优于±１５０ｐｐｍ（－４０℃～＋５０℃）。     

声表面波脉的冲编码调制振荡器

论述了一种直接式声表面波脉冲编码调制振荡器的工作原理及设计方法。实际制作了工作频率为３９４ＭＨｚ、调制频偏大于２００ｋＨｚ、调制信号码速率大于４００ｋｂｉｔ／ｓ输出率大于５０ｍＷ、温度稳定性优于±５０×１０＾－６（－２０－＋６０℃）的性能优良的声表面波脉冲编码调振振荡器。     

一种新型高频率稳定度的SAW振荡器

作为声表面波(SAW)气体传感器的关键元件,SAW振荡器的频率稳定度直接影响到传感器的灵敏度和检测下限。因此,提高SAW振荡器的频率稳定度是传感器研究的关键。该文在ST石英基片上研制了一种具有低插入损耗(10 dB内)、单一模式控制的SAW双延迟线及振荡器,其频率稳定度达0.1×10-6量级,同时还分析了作为频控元件的延迟线品质因数及振荡电路温度对振荡器频率稳定度的影响。     

双声路声表面波质量传感器的研究

在LiNbO3晶片上设计并实现了一种新型的双声路延迟线型声表面波质量传感器。利用光刻工艺在每个声传播路径上构造了一个方形质量沉积区,当有物质沉积到该区时,由于质量沉积效应,声表面波的波速发生变化,使以延迟线作为反馈回路的振荡器的振荡频率发生变化,并通过这一变化反映出沉积物的质量。为了补偿温度对器件传输频谱的影响,该器件采用双声路结构,一路为传感声路,一路为参考声路。介绍了器件的设计、工艺流程和测试方法,最后对测试结果进行了分析和讨论。测试结果表明该传感器的温度系数为7Hz/°C,灵敏度为4.9×10-6cm2/g。     

一种窄带温补型声表面波滤波器

该文介绍了一种频率温度系数接近0的窄带温补型声表面波滤波器。该滤波器采用黑化的42°Y-X钽酸锂为衬底,温度补偿层材料采用二氧化硅薄膜,利用化学机械抛光二氧化硅薄膜法获得了平坦表面形貌。制作了温补型声表面波滤波器样品并进行了测试。测试结果表明,该温补型声表面波滤波器的中心频率约1 360 MHz,在-55～85℃内频率漂移仅约390 kHz,频率温度系数约-2×10~(-6)/℃,插入损耗约1.3 dB。     

一种新型声表面波振荡器系统的设计研究

针对振荡器中声表面波器件存在的体声波干扰、电极反射及旁瓣过大问题,提出了一种新型声表面波振荡器系统的设计方案。该方案将多条耦合器用于分离体声波,分裂电极用于减弱电极反射问题,并采用了输入、输出换能器双加权的措施来降低旁瓣信号。通过对一个中心频率为50.8MHz声表面波振荡器的实现和测试,得到该新型声表面波振荡器系统的振荡频率为50.613 MHz,与系统的设计值误差仅为3.6‰,并且具有良好的周期性和稳定性。     

多层微结构声表面波温补滤波器仿真设计

声表面波滤波器(SAWF)工作频率在宽温度范围内高度稳定是电子系统频谱控制的关键。已成为当前SAWF发展的主要技术方向。该文提出了基于多层微结构压电材料的的SAWF温度补偿技术方案,实现了基于钽酸锂(LT)压电基片上的温度补偿SAWF设计、仿真,并获得了满意的实验结果。基于LT/Si复合片法实现的SAWF频率温度系数在全温范围(-55~+85℃)内达到25×10~(-6)/℃;基于SiO_2/LT薄膜补偿法实现的SAWF频率温度系数在全温范围(-55~+85℃)内小于10×10~(-6)/℃。研制的温度补偿声表面波滤波器(TC-SAWF)达到要求,已在系统中得到应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.